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1. 发明授权

US08395173B2 Semiconductor light-emitting element, method of manufacturing same, and light-emitting device 失效
标题翻译：半导体发光元件及其制造方法以及发光元件
公开(公告)号：US08395173B2
公开(公告)日：2013-03-12
申请号：US13126525
申请日：2009-10-28
申请人： Akihiko Murai , Hiroshi Fukshima
发明人： Akihiko Murai , Hiroshi Fukshima
IPC分类号： H01L33/38 , H01L33/42 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/507
摘要： A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
摘要翻译：提供了半导体发光元件及其制造方法以及能够提高发光效率的发光元件。根据本发明的半导体发光元件1包括：具有p型GaN膜24和n型GaN膜22的层叠结构的发光层2; 由ZnO形成的导电六角锥形基座3，并且在底面31上与发光层一起安装; 在离开发光层2的位置处接合到基座3的底面31的阳极5; 以及安装在发光层2上的阴极4.在半导体发光元件1中，p型GaN膜24与基体3的底面31接合，阴极4与N n型GaN膜22的极性面，n型GaN膜22的N极平面与p型GaN膜24相反。在半导体发光元件1中， n型GaN膜22的极性面在与阴极4接合的部分的外侧具有微细的峰谷结构22c。

2. 发明申请

US20110018024A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ILLUMINATING APPARATUS USING THE SAME 有权
标题翻译：使用相同的半导体发光元件和照明设备
公开(公告)号：US20110018024A1
公开(公告)日：2011-01-27
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/60
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

3. 发明授权

US08525204B2 Semiconductor light emitting element and illuminating apparatus using the same 有权
标题翻译：半导体发光元件及其使用的照明装置
公开(公告)号：US08525204B2
公开(公告)日：2013-09-03
申请号：US12933749
申请日：2009-03-25
申请人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
发明人： Hiroshi Fukshima , Kazuyuki Yamae , Masaharu Yasuda , Tomoya Iwahashi , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer.
摘要翻译：一种半导体发光元件，包括：层叠有具有发光层的发光波长的光学透明性的n型半导体层，发光层和p型半导体层; 以及反射膜，其设置在与从所述发光层发射的光的表面相反的一侧，所述反射膜包括：具有发光层的发光波长的光学透明性的透明层，以及金属层，其层叠在与发光层相反的一侧的透明层上，由具有高反射率的金属材料构成，透明层的折射率低于设置在侧面的层的折射率从透明层观察发光层的发光波长，并且透明层的厚度等于或大于通过将发射波长的¾的值除以透明层的折射率而获得的值层。

4. 发明申请

US20110215296A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING SAME, AND LIGHT-EMITTING DEVICE 失效
标题翻译：半导体发光元件，制造方法和发光器件
公开(公告)号：US20110215296A1
公开(公告)日：2011-09-08
申请号：US13126525
申请日：2009-10-28
申请人： Akihiko Murai , Hiroshi Fukshima
发明人： Akihiko Murai , Hiroshi Fukshima
IPC分类号： H01L33/06 , H01L33/50
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/507
摘要： A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24. In the semiconductor light-emitting element 1, the N-polar plane of the n-type GaN film 22 has a fine peak-valley structure 22c outside a portion joined to the cathode 4.
摘要翻译：提供了半导体发光元件及其制造方法以及能够提高发光效率的发光元件。根据本发明的半导体发光元件1包括：具有p型GaN膜24和n型GaN膜22的层叠结构的发光层2; 由ZnO形成的导电六角锥形基座3，并且在底面31上与发光层一起安装; 在离开发光层2的位置处接合到基座3的底面31的阳极5; 以及安装在发光层2上的阴极4.在半导体发光元件1中，p型GaN膜24与基体3的底面31接合，阴极4与N n型GaN膜22的极性面，n型GaN膜22的N极平面与p型GaN膜24相反。在半导体发光元件1中， n型GaN膜22的极性面在与阴极4接合的部分的外侧具有微细的峰谷结构22c。

5. 发明授权

US09018656B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US09018656B2
公开(公告)日：2015-04-28
申请号：US13201853
申请日：2010-02-23
申请人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
发明人： Akihiko Murai , Masaharu Yasuda , Tomoya Iwahashi , Kazuyuki Yamae
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40 , H01L33/62 , H01L33/10 , H01L33/44 , H01L33/64
CPC分类号： H01L33/387 , H01L33/10 , H01L33/405 , H01L33/44 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： The light emitting device comprises a mounting substrate and an LED chip which comprises an n-type nitride semiconductor layer, a nitride light emission layer on the n-type nitride semiconductor layer, p-type nitride semiconductor layer on the nitride light emission layer, an anode electrode opposite of the nitride light emission layer from the p-type nitride semiconductor layer, and a cathode electrode on the n-type nitride semiconductor layer. The mounting substrate has a patterned conductor which is connected to the cathode electrode through a bump and also connected to the anode electrode through a bump. The LED chip further comprises one or more dielectric layer between the p-type nitride semiconductor layer and the anode electrode to have an arrangement which resembles an island. The p-type nitride semiconductor layer has a first region which is overlapped with the bump. The dielectric layer is not formed within the first region.
摘要翻译：发光装置包括安装基板和LED芯片，其包括n型氮化物半导体层，n型氮化物半导体层上的氮化物发光层，氮化物发光层上的p型氮化物半导体层，与p型氮化物半导体层的氮化物发光层相反的阳极电极以及n型氮化物半导体层上的阴极电极。安装基板具有图案化的导体，其通过凸块连接到阴极电极，并且还通过凸块连接到阳极电极。 LED芯片还包括在p型氮化物半导体层和阳极之间的一个或多个介电层，以具有类似于岛的布置。 p型氮化物半导体层具有与凸块重叠的第一区域。电介质层不形成在第一区域内。

6. 发明申请

US20130075776A1 LIGHT DISTRIBUTION CONTROLLER, LIGHT-EMITTING DEVICE USING THE SAME, AND METHOD FOR FABRICATING LIGHT DISTRIBUTION CONTROLLER 失效
标题翻译：光分配控制器，使用其的发光装置和制造光分配控制器的方法
公开(公告)号：US20130075776A1
公开(公告)日：2013-03-28
申请号：US13701998
申请日：2011-07-04
申请人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
发明人： Akihiko Murai , Masahiro Kume , Akiko Nakamura , Tooru Aoyagi , Kiyoshi Fujihara
IPC分类号： G09F13/04 , H01L33/00 , H01L33/50
CPC分类号： G09F13/04 , G02B19/0028 , G02B19/0066 , G02B19/0071 , H01L33/005 , H01L33/50 , H01L33/58
摘要： A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.
摘要翻译：发光装置的配光控制器包括由设置在插入透明粘合剂的LED上的ZnO形成的第一光学部件和覆盖第一光学部件的第二光学部件。第一光学构件包括具有正六边形形状的开口的第一凹部，其面积逐渐增加。在第一凹部中，形成具有倾斜面的内壁面，其各自的底部由开口形状的六边形的一侧形成。在第一光学构件的外侧，形成各自具有梯形形状的外壁面。第二光学构件包括第二凹部，其布置成使得通过第一光学构件行进的光的光分布特性中的环形峰值处的光被全反射。

7. 发明申请

US20110248239A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20110248239A1
公开(公告)日：2011-10-13
申请号：US13141217
申请日：2009-12-21
申请人： Akihiko Murai
发明人： Akihiko Murai
IPC分类号： H01L33/06 , H01L33/42
CPC分类号： H01L33/20 , H01L33/08 , H01L33/38
摘要： A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
摘要翻译：发光器件包括衬底和安装在衬底上的LED芯片。芯片包括：主体，其包括透明导体，该透明导体包括基部并从基部伸出以从基部渐尖; 光源，其包括分别形成在所述基座上的发光部; 形成在基座上的第一端子; 以及分别形成在发光部分上的第二端子。基板的导体图案包括：与第一端子电连接的第一导体; 以及分别与第二端子电连接的第二导体。

8. 发明授权

US07994527B2 High light extraction efficiency light emitting diode (LED) 有权
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：US07994527B2
公开(公告)日：2011-08-09
申请号：US11593268
申请日：2006-11-06
申请人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
发明人： Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译：一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被抽取到空气中。

9. 发明授权

US08410471B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US08410471B2
公开(公告)日：2013-04-02
申请号：US13141217
申请日：2009-12-21
申请人： Akihiko Murai
发明人： Akihiko Murai
IPC分类号： H01L33/06
CPC分类号： H01L33/20 , H01L33/08 , H01L33/38
摘要： A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively.
摘要翻译：发光器件包括衬底和安装在衬底上的LED芯片。芯片包括：主体，其包括透明导体，该透明导体包括基部并从基部伸出以从基部渐尖; 光源，其包括分别形成在所述基座上的发光部; 形成在基座上的第一端子; 以及分别形成在发光部分上的第二端子。基板的导体图案包括：与第一端子电连接的第一导体; 以及分别与第二端子电连接的第二导体。

10. 发明授权

US07344958B2 Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications 失效
标题翻译：用于光电子应用的晶片接合方法（A1，In，Ga）N和Zn（S，Se）
公开(公告)号：US07344958B2
公开(公告)日：2008-03-18
申请号：US11175761
申请日：2005-07-06
申请人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
发明人： Akihiko Murai , Lee McCarthy , Umesh K. Mishra , Steven P. DenBaars , Carsten Kruse , Stephan Figge , Detlef Hommel
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/0237 , H01L21/02395 , H01L21/0242 , H01L21/0254 , H01L21/02557 , H01L21/0256 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.
摘要翻译：（Al，In，Ga）N和Zn（S，Se）之间的晶片接合结构的制造方法。可以使用Zn（S，Se）和MgS /（Zn，Cd）Se材料制造用于相对短的光波长的高反射和导电分布布拉格反射器（DBR）。使用晶片接合技术，这些高质量的DBR结构可以与GaN基光学器件结构组合。

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