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1. 发明授权

US07037574B2 Atomic layer deposition for fabricating thin films 失效
标题翻译：用于制造薄膜的原子层沉积
公开(公告)号：US07037574B2
公开(公告)日：2006-05-02
申请号：US09864714
申请日：2001-05-23
申请人： Ajit P. Paranjpe , Sanjay Gopinath , Thomas R. Omstead , Randhir S. Bubber , Ming Mao
发明人： Ajit P. Paranjpe , Sanjay Gopinath , Thomas R. Omstead , Randhir S. Bubber , Ming Mao
IPC分类号： H01L21/8242 , H01L21/336 , C30B23/00 , C30B25/00
CPC分类号： H01L21/0228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C16/403 , C23C16/45527 , C23C16/56 , G11B5/3109 , G11B5/3163 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01F41/307 , H01L21/02178 , H01L21/02205 , H01L21/0234 , H01L21/3162 , Y10T428/24843
摘要： An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (Ra˜2 Å), pure (impurities
摘要翻译：原子层沉积（ALD）工艺通过等离子体退火在不同的膜厚度上沉积微电子结构的薄膜，例如先进的间隙和隧道结应用，以获得所需的本征膜应力和击穿膜强度。 ALD工艺的主要优点是接近100％的阶梯覆盖，其侧壁均匀分布。该方法提供了具有改进的击穿强度（9-10MV / cm）的平滑的（R a aα2），纯的（杂质<1 AT。％），ALO x ）具有商业上可行的吞吐量。

2. 发明授权

US08597528B1 Method and system for defining a read sensor using an ion mill planarization 有权
标题翻译：使用离子磨机平面化定义读取传感器的方法和系统
公开(公告)号：US08597528B1
公开(公告)日：2013-12-03
申请号：US13076103
申请日：2011-03-30
申请人： Anup G. Roy , Ming Mao
发明人： Anup G. Roy , Ming Mao
IPC分类号： B44C1/22
CPC分类号： H01L43/12 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3932
摘要： A method and system for fabricating a magnetic transducer is described. A magnetic junction is defined from the magnetoresistive stack. The magnetic junction has a top and a plurality of sides. The step of defining the magnetic junction redeposits a portion of the magnetoresistive stack and forms fencing adjacent to the top of the magnetic junction. At least one hard bias structure is provided after the magnetic junction is defined. A first portion of the at least one hard bias structure is substantially adjacent to the magnetoresistive junction in a track-width direction. The magnetic junction is ion beam planarized, thereby substantially removing the fencing.
摘要翻译：描述了用于制造磁换能器的方法和系统。从磁阻叠层定义磁结。磁性接头具有顶部和多个侧面。限定磁结的步骤重新沉积磁阻堆叠的一部分并且形成与磁结的顶部相邻的围栏。在确定了磁结后，提供了至少一个硬偏置结构。至少一个硬偏压结构的第一部分基本上与轨道宽度方向上的磁阻结相邻。磁结是离子束平坦化的，从而基本上除去围栏。

3. 发明申请

US20070045102A1 Method of sputter depositing an alloy on a substrate 审中-公开
标题翻译：将合金溅射沉积在基底上的方法
公开(公告)号：US20070045102A1
公开(公告)日：2007-03-01
申请号：US11209907
申请日：2005-08-23
申请人： Chih-Ling Lee , Adrian Devasahayam , Ming Mao , Chih-Ching Hu , Vincent Ip , Piero Sferlazzo
发明人： Chih-Ling Lee , Adrian Devasahayam , Ming Mao , Chih-Ching Hu , Vincent Ip , Piero Sferlazzo
IPC分类号： C23C14/00
CPC分类号： C23C14/352 , C23C14/165
摘要： An improved planetary sputter deposition method for sputter depositing an alloy on a substrate wherein the sputter deposited amount, or thickness, of a specific material of the alloy can be controlled so that different substrates can be provided with an alloy having a different composition, i.e. having different percentages of the same materials, thus, reducing the costs of stockpiling multiple alloy targets. The method generally includes providing a substrate and a plurality of targets with each of the plurality of targets being composed of one or more magnetic materials. The targets are sputtered, in sequence, to deposit each of the materials of the plurality of targets on the substrate to provide at least one laminate defining an alloy.
摘要翻译：一种用于在基板上溅射沉积合金的改进的行星溅射沉积方法，其中可以控制合金的特定材料的溅射沉积量或厚度，使得可以提供具有不同组成的合金，即具有不同百分比的相同材料，从而降低储存多种合金靶材的成本。该方法通常包括提供基底和多个靶，其中多个靶中的每一个由一个或多个磁性材料构成。按顺序溅射靶，以将多个靶材的每种材料沉积在基底上，以提供限定合金的至少一个层压板。

4. 发明申请

US20060292705A1 Method and process for fabricating read sensors for read-write heads in mass storage devices 审中-公开
标题翻译：在大容量存储设备中制造用于读写头的读取传感器的方法和过程
公开(公告)号：US20060292705A1
公开(公告)日：2006-12-28
申请号：US11166322
申请日：2005-06-24
申请人： Hariharakeshave Hegde , Ming Mao , Boris Druz , Adrian Devasahayam
发明人： Hariharakeshave Hegde , Ming Mao , Boris Druz , Adrian Devasahayam
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11B5/3163 , G11B5/3169 , G11B5/3903 , G11B5/3929
摘要： Method and process for fabricating a device structure for a read head of a mass storage device. A polish stop layer formed of a relatively hard material, such as diamond-like carbon, is positioned between a layer stack and a resist mask used to mask regions of the layer stack during ion milling that removes portions of the layer stack to define a read sensor. The resist mask is removed, after the read sensor is defined, by a planarization process, which eliminates the need to lift-off the resist mask with a conventional chemical-based process. An electrical isolation layer of a material, such as Al2O3, is formed on the masked read sensor. In addition or alternatively, the electrical isolation layer may be formed using an atomic layer deposition (ALD) process performed at an elevated temperature that would otherwise hard bake the resist mask.
摘要翻译：制造用于大容量存储装置的读取头的装置结构的方法和工艺。由相对硬的材料（例如类金刚石碳）形成的抛光停止层位于层叠和抗蚀剂掩模之间，用于在离子铣削期间掩蔽层堆叠的区域，其移除层堆叠的部分以限定读取传感器。在通过平坦化处理定义读取传感器之后，去除抗蚀剂掩模，这消除了用常规的基于化学的方法剥离抗蚀剂掩模的需要。在掩蔽的读取传感器上形成诸如Al 2 O 3 3的材料的电隔离层。另外或替代地，电隔离层可以使用在否则将硬烘烤抗蚀剂掩模的升高的温度下进行的原子层沉积（ALD）工艺来形成。

5. 发明授权

US06934131B2 Spin valve with thermally stable pinned layer structure having ruthenium oxide specular reflecting layer 失效
标题翻译：具有热稳定钉扎层结构的旋转阀具有氧化钌镜面反射层
公开(公告)号：US06934131B2
公开(公告)日：2005-08-23
申请号：US10341281
申请日：2003-01-13
申请人： Ming Mao , Adrian J. Devasahayam , Jacques C. S. Kools , Chih-Ling Lee , Chih-Ching Hu , Patricia L. Cox
发明人： Ming Mao , Adrian J. Devasahayam , Jacques C. S. Kools , Chih-Ling Lee , Chih-Ching Hu , Patricia L. Cox
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49044
摘要： A thermally stable spin valve sensor having an increased GMR ratio by virtue of an AP pinned layer structure in which the first and second pinned layers are separated by an AP coupling layer having a nano-oxide layer formed as an oxidized surface portion of the AP coupling layer. The nano-oxide layer provides an increase in the specular scattering, and in turn, an increase in the GMR ratio.
摘要翻译：一种热稳定的自旋阀传感器，其具有通过AP钉扎层结构增加的GMR比，其中第一和第二被钉扎层由具有形成为AP耦合器的氧化表面部分的纳米氧化物层的AP耦合层分开层。纳米氧化物层提供了镜面散射的增加，并且进而增加了GMR比。

6. 发明授权

US06800565B2 Method of forming thin oxidation layer by cluster ion beam 失效
公开(公告)号：US06800565B2
公开(公告)日：2004-10-05
申请号：US10341282
申请日：2003-01-13
申请人： Chih-Ching Hu , Adrian J. Devasahayam , Patricia L. Cox , Chih-Ling Lee , Ming Mao , Jacques C. S. Kools
发明人： Chih-Ching Hu , Adrian J. Devasahayam , Patricia L. Cox , Chih-Ling Lee , Ming Mao , Jacques C. S. Kools
IPC分类号： H01L2131
CPC分类号： C23C14/5833 , C23C8/02 , C23C26/00 , C23C28/00 , G11B5/84
摘要： A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer. Oxidizing by cluster ion beam oxidation advantageously comprises mixing a pressurized inert carrier gas with oxygen gas to form a gas mixture and passing the gas mixture into a low pressure vacuum to produce a supersonic gas jet, whereby expansion occurs in the jet to cause formation of clusters of inert gas and oxygen atoms and molecules. The clusters are then ionized and focused into a cluster ion beam and accelerated toward the top surface of the nonmagnetic metal layer to bombard the top surface and react the ionized oxygen atoms and molecules with at least the top surface of the nonmagnetic metal layer.

7. 发明授权

US08547667B1 Method and system for providing a hard bias structure in a magnetic recording transducer 有权
标题翻译：在磁记录传感器中提供硬偏置结构的方法和系统
公开(公告)号：US08547667B1
公开(公告)日：2013-10-01
申请号：US12324735
申请日：2008-11-26
申请人： Anup Ghosh Roy , Ming Mao , Mahendra Pakala
发明人： Anup Ghosh Roy , Ming Mao , Mahendra Pakala
IPC分类号： G11B5/127
CPC分类号： G11B5/3932
摘要： A method and system for providing a magnetic transducer is described. The method and system include providing a seed layer and providing at least one adjustment layer on the seed layer. The method and system also include providing a hard bias structure on the at least one adjustment layer. The seed layer has a first template including a first template dimension and a first texture. The at least one adjustment layer has a second template including a second template dimension and a second texture. The hard bias structure has a third template including a third template dimension and a third texture. The second template is between the first template and the third template.
摘要翻译：描述了一种用于提供磁换能器的方法和系统。该方法和系统包括提供种子层并在种子层上提供至少一个调节层。该方法和系统还包括在至少一个调节层上提供硬偏压结构。种子层具有包括第一模板尺寸和第一纹理的第一模板。所述至少一个调整层具有包括第二模板尺寸和第二纹理的第二模板。硬偏置结构具有包括第三模板尺寸和第三纹理的第三模板。第二个模板位于第一个模板和第三个模板之间。

8. 发明授权

US07405085B2 Amorphous soft magnetic shielding and keeper for MRAM devices 失效
标题翻译：用于MRAM器件的无定形软磁屏蔽和保持器
公开(公告)号：US07405085B2
公开(公告)日：2008-07-29
申请号：US10943510
申请日：2004-09-15
申请人： Jacques Constant Stefan Kools , Ming Mao , Thomas Schneider , Jinsong Wang , Michael Gutkin
发明人： Jacques Constant Stefan Kools , Ming Mao , Thomas Schneider , Jinsong Wang , Michael Gutkin
IPC分类号： H01L21/00
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： An amorphous soft magnetic thin film material for forming shielding and keeper applications in MRAM devices. The amorphous soft magnetic material may be deposited using Physical Vapor Deposition (PVD) in the presence of a magnetic field, in order to form shielding layers and keepers in a multi-layer metallization process. The soft magnetic material may be an amorphous metallic alloy, such as CoZrX, where X may be Ta, Nb, Pd and/or Rh.
摘要翻译：用于在MRAM器件中形成屏蔽和保持器应用的无定形软磁薄膜材料。可以在存在磁场的情况下使用物理气相沉积（PVD）沉积非晶软磁材料，以便在多层金属化工艺中形成屏蔽层和保持器。软磁性材料可以是非晶金属合金，例如CoZrX，其中X可以是Ta，Nb，Pd和/或Rh。

9. 发明申请

US20070209932A1 Sputter deposition system and methods of use 审中-公开
标题翻译：溅射沉积系统及其使用方法
公开(公告)号：US20070209932A1
公开(公告)日：2007-09-13
申请号：US11372517
申请日：2006-03-10
申请人： Piero Sferlazzo , Ming Mao , Jinliang Chen , David Felsenthal , Robert Hieronymi , Miroslav Eror
发明人： Piero Sferlazzo , Ming Mao , Jinliang Chen , David Felsenthal , Robert Hieronymi , Miroslav Eror
IPC分类号： C23C14/00
CPC分类号： C23C14/352 , C23C14/505 , C23C14/568 , C23C14/5833
摘要： The present invention relates to a sputter deposition system and to methods of use thereof for processing substrates using planetary sputter deposition methods. The sputter deposition system includes a deposition chamber having an azimuthal axis. A rotatable member is situated in the chamber and includes a plurality of magnetrons provided thereon. Each magnetron includes a corresponding one of a plurality of sputtering targets. The rotatable member is configured to position each of the magnetrons to direct sputtered material from the corresponding one of the sputtering targets to a deposition zone defined in the deposition chamber. A transport mechanism is situated in the deposition chamber and includes an arm rotatable about the azimuthal axis. A substrate holder is attached to the arm of the transport mechanism and supports the substrate as the arm rotates the substrate holder to intersect the deposition zone for depositing sputtered material on the substrate.
摘要翻译：溅射沉积系统技术领域本发明涉及一种溅射沉积系统及其使用方法，用于使用行星式溅射沉积方法来处理衬底溅射沉积系统包括具有方位角轴的沉积室。可旋转构件位于腔室中并且包括设置在其上的多个磁控管。每个磁控管包括多个溅射靶中相应的一个。可旋转构件被构造成定位每个磁控管以将溅射的材料从相应的一个溅射靶引导到在沉积室中限定的沉积区。输送机构位于沉积室中并且包括可围绕方位轴线旋转的臂。衬底保持器附接到输送机构的臂上并且当臂旋转衬底保持器以与沉积区相交以在基底上沉积溅射材料时支撑衬底。

10. 发明申请

US20060216548A1 Nanolaminate thin films and method for forming the same using atomic layer deposition 审中-公开
标题翻译： Naminaminate薄膜及其使用原子层沉积法形成的薄膜
公开(公告)号：US20060216548A1
公开(公告)日：2006-09-28
申请号：US11086133
申请日：2005-03-22
申请人： Ming Mao , Randhir Bubber , Thomas Schneider
发明人： Ming Mao , Randhir Bubber , Thomas Schneider
IPC分类号： C23C16/00 , B32B9/00
CPC分类号： H01L21/022 , C23C16/402 , C23C16/45529 , C23C26/00 , C23C28/00 , C23C28/04 , H01L21/02164 , H01L21/02178 , H01L21/0228 , H01L21/3142 , H01L21/31608 , H01L21/31616
摘要： A nanolaminate thin film and a method for forming the same using atomic layer deposition are disclosed. The method includes forming an aluminum oxide layer having a first thickness on at least a portion of a substrate surface by sequentially pulsing a first precursor and a first reactant into an enclosure containing the substrate. A layer of silicon dioxide is formed on at least a portion of the aluminum oxide layer by sequentially pulsing a second precursor and a second reactant into the enclosure to form a nanolaminate thin film.
摘要翻译：公开了一种纳米氨酸盐薄膜及其使用原子层沉积法形成该薄膜的方法。该方法包括通过将第一前体和第一反应物顺序地脉冲到包含衬底的外壳中，在衬底表面的至少一部分上形成具有第一厚度的氧化铝层。通过将第二前体和第二反应物顺序地脉冲到外壳中以形成纳米级的薄膜，在氧化铝层的至少一部分上形成二氧化硅层。

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