专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110032645A1 MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM 有权
标题翻译：磁性传感器堆叠体，其形成方法，成膜控制程序和记录介质
公开(公告)号：US20110032645A1
公开(公告)日：2011-02-10
申请号：US12849907
申请日：2010-08-04
申请人： Abarra Einstein NOEL , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
发明人： Abarra Einstein NOEL , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , H01L43/08 , H01L43/12
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.
摘要翻译：本发明涉及在磁阻元件的两个相对的接合壁面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁面。磁传感器堆叠体在衬底上具有在施加偏置磁场时其电阻波动的磁阻元件，并且在磁阻元件的相对的接合壁面的侧面包括用于施加偏置磁场的磁性层的场区域到元素磁阻元件在反铁磁层的一部分上具有至少一个铁磁性堆叠，并且铁磁性堆叠沿着接合壁所面对的方向的最上面的宽度小于彼此相对的方向的宽度反铁磁层在同一方向。

2. 发明授权

US08810974B2 Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium 有权
标题翻译：磁传感器堆叠体，其形成方法，成膜控制程序和记录介质
公开(公告)号：US08810974B2
公开(公告)日：2014-08-19
申请号：US12849907
申请日：2010-08-04
申请人： Abarra Einstein Noel , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
发明人： Abarra Einstein Noel , Masahiro Suenaga , Yoshinori Ota , Tetsuya Endo
IPC分类号： G11B5/39 , G11B5/31 , H01L43/08 , H01L43/12 , G01R33/09
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3163 , G11B5/398 , H01L43/08 , H01L43/12
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall faces of a magnetoresistive element so as to be almost perpendicular to the junction wall faces. A magnetic sensor stack body has, on a substrate, a magnetoresistive element whose electric resistance fluctuates when a bias magnetic field is applied and, on sides of opposed junction wall faces of the magnetoresistive element, field regions including magnetic layers for applying the bias magnetic field to the element. The magnetoresistive element has at least a ferromagnetic stack on a part of an antiferromagnetic layer, and width of an uppermost face of the ferromagnetic stack along a direction in which the junction wall faces are opposed to each other is smaller than width of an uppermost face of the antiferromagnetic layer in the same direction.
摘要翻译：本发明涉及在磁阻元件的两个相对的接合壁面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁面。磁传感器堆叠体在衬底上具有在施加偏置磁场时其电阻波动的磁阻元件，并且在磁阻元件的相对的接合壁面的侧面包括用于施加偏置磁场的磁性层的场区域到元素磁阻元件在反铁磁层的一部分上具有至少一个铁磁性堆叠，并且铁磁性堆叠沿着接合壁所面对的方向的最上面的宽度小于彼此相对的方向的宽度反铁磁层在同一方向。

3. 发明授权

US08776542B2 Cooling system 有权
标题翻译：冷却系统
公开(公告)号：US08776542B2
公开(公告)日：2014-07-15
申请号：US12975962
申请日：2010-12-22
申请人： Tetsuya Endo , Einstein Noel Abarra
发明人： Tetsuya Endo , Einstein Noel Abarra
IPC分类号： F25D23/12 , H05K7/20 , F25D25/02
CPC分类号： H05K7/20009 , F25D25/027 , H01J37/34 , H05K7/20372 , H05K7/20545
摘要： A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed.
摘要翻译：在溅射装置的真空室中冷却晶片的冷却系统包括用于冷却晶片的晶片冷却阶段，用于冷却晶片冷却级的冷却机构，将冷却气体引入到晶片冷却级的冷却气体供给单元晶片旋转机构，其将晶片保持在与晶片冷却台分离预定间隙的状态，并且在保持晶片的同时旋转;以及驱动机构，其以预定旋转速度旋转晶片旋转机构。

4. 发明申请

US20110272278A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20110272278A1
公开(公告)日：2011-11-10
申请号：US13116492
申请日：2011-05-26
申请人： Kyosuke Sugi , Tetsuya Endo , Einstein Noel Abarra
发明人： Kyosuke Sugi , Tetsuya Endo , Einstein Noel Abarra
IPC分类号： C23C14/34
CPC分类号： C23C14/225 , C23C14/34 , C23C14/345 , C23C14/505 , H01J37/32568 , H01J37/34
摘要： The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.
摘要翻译：本发明提供一种能够形成具有降低的磁各向异性取向变化的磁性膜的溅射装置和成膜方法。本发明的溅射装置装备有可旋转阴极和可旋转台。舞台上可以有一个静电吸盘。此外，该级可以与能够向该级施加偏置电压的偏置电源电连接。此外，该台可以具有静电卡盘并与偏置电源电连接。

5. 发明申请

US20100155227A1 SPUTTERING APPARATUS AND FILM FORMING METHOD 审中-公开
标题翻译：溅射装置和薄膜成型方法
公开(公告)号：US20100155227A1
公开(公告)日：2010-06-24
申请号：US12620654
申请日：2009-11-18
申请人： Tetsuya Endo , Einstein Noel Abarra
发明人： Tetsuya Endo , Einstein Noel Abarra
IPC分类号： C23C14/54 , C23C14/50
CPC分类号： C23C14/505 , C23C14/046 , C23C14/225 , C23C14/54 , H01J37/32568 , H01J37/3266 , H01J37/32752 , H01J37/34
摘要： The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.
摘要翻译：本发明提供一种溅射装置和成膜方法，其可以在具有诸如V形槽的倾斜壁的槽中形成高质量的膜。本发明的溅射装置包括可旋转阴极（102），可旋转台（101）和可旋转屏蔽板（105）。溅射装置控制阴极（102），载物台（101）和屏蔽板（105）中的至少一个的旋转，使得溅射颗粒以一定角度入射到形成在基板（104）中的V形槽相对于V形槽的倾斜壁的法线为50°以下。

6. 发明申请

US20100133090A1 FILM FORMING METHOD BY SPUTTERING AND SPUTTERING APPARATUS THEREOF 有权
标题翻译：通过溅射和溅射装置形成膜形成方法
公开(公告)号：US20100133090A1
公开(公告)日：2010-06-03
申请号：US12684359
申请日：2010-01-08
申请人： Tetsuya Endo , Einstein Noel Abarra
发明人： Tetsuya Endo , Einstein Noel Abarra
IPC分类号： C23C14/36
CPC分类号： C23C14/225 , C23C14/044 , C23C14/3407 , C23C14/505 , C23C14/548 , H01F41/18 , H01J37/34 , H01J37/3405 , H01J37/3414 , H01J37/3435 , H01J37/3455
摘要： To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.
摘要翻译：为了提供一种溅射装置，其能够通过配置目标物和基板使得能够进行倾斜成膜，从而使从靶材发射的溅射粒子选择性倾斜地进入基板，并且可以均匀且紧凑地形成具有高单轴磁各向异性的磁性膜。溅射装置包括具有溅射靶支撑表面的阴极，阴极设置有溅射靶支撑表面旋转的旋转轴，以及具有基板支撑表面的台，该台设置有旋转轴线，基板支撑面旋转，并且溅射装置构成为使得溅射靶支撑表面和基板支撑表面彼此面对，并且可以围绕各自的旋转轴独立地旋转。此外，其构造使得屏蔽板布置在溅射靶支撑表面和基板支撑表面之间，并且可独立于阴极和台转动。

7. 发明授权

US08999121B2 Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：US08999121B2
公开(公告)日：2015-04-07
申请号：US13116492
申请日：2011-05-26
申请人： Kyosuke Sugi , Tetsuya Endo , Einstein Noel Abarra
发明人： Kyosuke Sugi , Tetsuya Endo , Einstein Noel Abarra
IPC分类号： C23C14/34 , C23C14/22 , C23C14/50 , H01J37/32 , H01J37/34
CPC分类号： C23C14/225 , C23C14/34 , C23C14/345 , C23C14/505 , H01J37/32568 , H01J37/34
摘要： The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.
摘要翻译：本发明提供一种能够形成具有降低的磁各向异性取向变化的磁性膜的溅射装置和成膜方法。本发明的溅射装置装备有可旋转阴极和可旋转台。舞台上可以有一个静电吸盘。此外，该级可以与能够向该级施加偏置电压的偏置电源电连接。此外，该台可以具有静电卡盘并与偏置电源电连接。

8. 发明授权

US08507113B2 Magnetic sensor stack body, method of forming the same, film formation control program, and recording medium 有权
标题翻译：磁传感器堆叠体，其形成方法，成膜控制程序和记录介质
公开(公告)号：US08507113B2
公开(公告)日：2013-08-13
申请号：US13319209
申请日：2010-05-28
申请人： Einstein Noel Abarra , Tetsuya Endo
发明人： Einstein Noel Abarra , Tetsuya Endo
IPC分类号： H01L43/08 , G01R33/09 , H01F10/16
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , H01F10/16 , H01F10/32 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1171
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.
摘要翻译：本发明涉及在磁阻元件的两个相对的接合壁表面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁表面。磁传感器堆叠体在磁阻元件的相对的接合壁表面的侧面上具有用于向元件施加偏置磁场的场区域。场区具有第一和第二磁性层，具有具有晶体c轴的磁性颗粒，第一磁性层与场区域中的接合壁表面相邻地设置，第一磁性层中的晶体c轴对准并定向在膜平面中的ABS，第二磁性层与场区域中的第一磁性层相邻地设置，并且第二磁性层中的晶体c轴方向在平面内随机分布。

9. 发明申请

US20120160672A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20120160672A1
公开(公告)日：2012-06-28
申请号：US13334859
申请日：2011-12-22
申请人： Tetsuya Endo
发明人： Tetsuya Endo
IPC分类号： C23C14/35
CPC分类号： H01J37/3455 , C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3435
摘要： A sputtering apparatus includes a target electrode capable of mounting a target, a first support member which supports the target electrode, a magnet unit which forms a magnetic field on a surface of the target, a second support member which supports the magnet unit, and a force generation portion which is provided between the first support member and the second support member, and generates a second force in a direction opposite to a first force that acts on the second support member by an action of the magnetic field formed between the target and the magnet unit, wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode.
摘要翻译：溅射装置包括能够安装靶的目标电极，支撑目标电极的第一支撑构件，在靶的表面上形成磁场的磁体单元，支撑磁体单元的第二支撑构件，以及力产生部分，其设置在第一支撑构件和第二支撑构件之间，并且通过形成在目标和第二支撑构件之间的磁场的作用沿与第二支撑构件作用的第一力相反的方向产生第二力磁体单元，其中所述第二力具有随着所述磁体单元靠近所述目标电极而增加的大小。

10. 发明申请

US20120070693A1 MAGNETIC SENSOR STACK BODY, METHOD OF FORMING THE SAME, FILM FORMATION CONTROL PROGRAM, AND RECORDING MEDIUM 有权
标题翻译：磁性传感器堆叠体，其形成方法，成膜控制程序和记录介质
公开(公告)号：US20120070693A1
公开(公告)日：2012-03-22
申请号：US13319209
申请日：2010-05-28
申请人： Einstein Noel Abarra , Tetsuya Endo
发明人： Einstein Noel Abarra , Tetsuya Endo
IPC分类号： G11B5/33 , C23C14/16 , B05D5/12
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , H01F10/16 , H01F10/32 , H01L43/12 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/1171
摘要： The present invention is directed to align crystal c-axes in magnetic layers near two opposed junction wall surfaces of a magnetoresistive element so as to be almost perpendicular to the junction wall surfaces. A magnetic sensor stack body has, on sides of opposed junction wall surfaces of a magnetoresistive element, field regions for applying a bias magnetic field to the element. The field region has first and second magnetic layers having magnetic particles having crystal c-axes, the first magnetic layer is disposed adjacent to the junction wall surface in the field region, the crystal c-axes in the first magnetic layer are aligned and oriented along an ABS in a film plane, the second magnetic layer is disposed adjacent to the first magnetic layer in the field region, and the crystal c-axis directions in the second magnetic layer are distributed at random in a plane.
摘要翻译：本发明涉及在磁阻元件的两个相对的接合壁表面附近的磁性层中对准晶体c轴，以便几乎垂直于接合壁表面。磁传感器堆叠体在磁阻元件的相对的接合壁表面的侧面上具有用于向元件施加偏置磁场的场区域。场区具有第一和第二磁性层，具有具有晶体c轴的磁性颗粒，第一磁性层与场区域中的接合壁表面相邻地设置，第一磁性层中的晶体c轴对准并定向在膜平面中的ABS，第二磁性层与场区域中的第一磁性层相邻地设置，并且第二磁性层中的晶体c轴方向在平面内随机分布。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式