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1. 发明申请

WO2013020051A1 METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL 审中-公开
标题翻译：用于使用注册通道的GAN垂直JFET的方法和系统
公开(公告)号：WO2013020051A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049520
申请日：2012-08-03
申请人： AVOGY, INC. , KIZILYALLI, Isik C. , NIE, Hui , EDWARDS, Andrew P. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
发明人： KIZILYALLI, Isik C. , NIE, Hui , EDWARDS, Andrew P. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
IPC分类号： H01L29/772
CPC分类号： H01L29/66909 , H01L21/8252 , H01L27/0605 , H01L29/1066 , H01L29/2003 , H01L29/66446 , H01L29/66924 , H01L29/8083
摘要： A vertical Ill-nitride field effect transistor includes a drain comprising a first Ill-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second Ill-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third Ill-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, a gate region at least partially surrounding the channel region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical Ill-nitride field effect transistor is along the vertical direction, and the channel region extends along at least a portion of the second surface of the gate region.
摘要翻译：垂直III族氮化物场效应晶体管包括：包括第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点，以及包括耦合到漏极的第二III族氮化物材料的漂移区域。场效应晶体管还包括沟道区，该沟道区包括耦合到漏极并沿着垂直方向邻近漏极设置的第三III族氮化物材料，至少部分围绕沟道区的栅极区。场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直的氮化物场效应晶体管的工作期间的电流沿着垂直方向，并且沟道区沿第二表面的至少一部分延伸的门区域。

2. 发明申请

WO2013055629A1 METHOD OF FABRICATING A GAN MERGED P-I-N SCHOTTKY (MPS) DIODE 审中-公开
标题翻译：制备GAN MERGED P-I-N肖特基（MPS）二极体的方法
公开(公告)号：WO2013055629A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/059245
申请日：2012-10-08
申请人： AVOGY, INC. , EDWARDS, Andrew P. , NIE, Hui , KIZILYALLI, Isik C. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
发明人： EDWARDS, Andrew P. , NIE, Hui , KIZILYALLI, Isik C. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
IPC分类号： H01L21/28
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial structure including a first III-nitride epitaxial layer coupled to the first side of the III-nitride substrate and a plurality of III-nitride regions of a second conductivity type. The plurality of III-nitride regions have at least one III-nitride epitaxial region of the first conductivity type between each of the plurality of III-nitride regions. The semiconductor structure further includes a first metallic structure electrically coupled to one or more of the plurality of III-nitride regions and the at least one III-nitride epitaxial region. A Schottky contact is created between the first metallic structure and the at least one III-nitride epitaxial region.
摘要翻译：半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括III族氮化物外延结构，其包括耦合到III族氮化物衬底的第一侧的第一III族氮化物外延层和多个第二导电类型的III族氮化物区域。多个III族氮化物区域在多个III族氮化物区域中的每一个之间具有至少一个第一导电类型的III族氮化物外延区域。半导体结构还包括电耦合到多个III族氮化物区域和至少一个III族氮化物外延区域中的一个或多个的第一金属结构。在第一金属结构和至少一个III族氮化物外延区之间产生肖特基接触。

3. 发明申请

WO2013055631A1 SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS 审中-公开
标题翻译：肖特基二极管与煤炭材料中的包层
公开(公告)号：WO2013055631A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/059250
申请日：2012-10-08
申请人： AVOGY, INC. , EDWARDS, Andrew, P. , NIE, Hui , KIZILYALLI, Isik, C. , BROWN, Richard, J. , BOUR, David, P. , ROMANO, Linda , PRUNTY, Thomas, R.
发明人： EDWARDS, Andrew, P. , NIE, Hui , KIZILYALLI, Isik, C. , BROWN, Richard, J. , BOUR, David, P. , ROMANO, Linda , PRUNTY, Thomas, R.
IPC分类号： H01L29/20
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.
摘要翻译：半导体结构包括III族氮化物衬底，其特征在于具有第一导电类型并且具有与第一侧相对的第一侧和第二侧，第一导电类型的III族氮化物外延层耦合到III族氮化物的第一侧衬底以及耦合到III族氮化物外延层的第二导电类型的多个III族氮化物外延结构。半导体结构还包括耦合到多个III族氮化物外延结构的第一导电类型的III族氮化物外延形成，以及形成与III族氮化物外延形成肖特基接触的金属结构，并与多个III族氮化物外延结构。

4. 发明申请

WO2013043712A1 METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES 审中-公开
标题翻译：用于氮化镓设备中扩散和植入的方法和系统
公开(公告)号：WO2013043712A1
公开(公告)日：2013-03-28
申请号：PCT/US2012/056101
申请日：2012-09-19
申请人： AVOGY, INC. , BOUR, David, P. , BROWN, Richard, J. , KIZILYALLI, Isik, C. , PRUNTY, Thomas, R. , ROMANO, Linda , EDWARDS, Andrew, P. , NIE, Hui , RAJ, Mahdan
发明人： BOUR, David, P. , BROWN, Richard, J. , KIZILYALLI, Isik, C. , PRUNTY, Thomas, R. , ROMANO, Linda , EDWARDS, Andrew, P. , NIE, Hui , RAJ, Mahdan
IPC分类号： H01L21/425
CPC分类号： H01L21/26546 , H01L21/0332 , H01L21/2258 , H01L21/266 , H01L21/3245 , H01L29/2003 , H01L29/207 , H01L29/66136 , H01L29/66143 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.
摘要翻译：在III族氮化物衬底中形成掺杂区域的方法包括提供III族氮化物衬底并形成具有预定图案并与III族氮化物衬底的一部分耦合的掩模层。 III族氮化物衬底的特征在于第一导电类型，并且预定图案限定III族氮化物衬底的暴露区域。该方法还包括将III族氮化物衬底加热到预定温度，并将双前体气体放置在III族氮化物衬底的暴露区域附近。双前体气体包括氮源和掺杂剂源。该方法还包括将预定温度保持预定时间段，形成与III族氮化物衬底的暴露区域相邻的p型III族氮化物区域，以及去除掩模层。

5. 发明申请

WO2013020061A1 METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN GATE 审中-公开
标题翻译：用于使用注射门的GAN垂直JFET的方法和系统
公开(公告)号：WO2013020061A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049549
申请日：2012-08-03
申请人： AVOGY, INC. , KIZILYALLI, Isik C. , NIE, Hui , EDWARDS, Andrew P. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
发明人： KIZILYALLI, Isik C. , NIE, Hui , EDWARDS, Andrew P. , ROMANO, Linda , BOUR, David P. , BROWN, Richard J. , PRUNTY, Thomas R.
IPC分类号： H01L29/66
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/1095 , H01L29/2003 , H01L29/66446 , H01L29/66909 , H01L29/66924
摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.
摘要翻译：垂直III族氮化物场效应晶体管包括：包含第一III族氮化物材料的漏极，与漏极电耦合的漏极接触点;以及漂移区域，包括耦合到漏极并邻近漏极设置的第二III族氮化物材料垂直方向场效应晶体管还包括沟道区，该沟道区包括耦合到漂移区的第三III族氮化物材料，至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。场效应晶体管还包括耦合到沟道区的源极和电耦合到源极的源极接触。沟道区域沿着垂直方向设置在漏极和源极之间，使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。

6. 发明申请

WO2013019521A1 METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES 审中-公开
标题翻译：基于氮化镓的器件控制的方法和系统
公开(公告)号：WO2013019521A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/048194
申请日：2012-07-25
申请人： AVOGY, INC. , KIZILYALLI, ISIK C. , NIE, Hui , EDWARDS, Andrew, P. , ROMANO, Linda , BOUR, David, P. , BROWN, Richard, J. , PRUNTY, Thomas
发明人： KIZILYALLI, ISIK C. , NIE, Hui , EDWARDS, Andrew, P. , ROMANO, Linda , BOUR, David, P. , BROWN, Richard, J. , PRUNTY, Thomas
IPC分类号： H01L29/20
CPC分类号： H01L29/66909 , H01L21/02538 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L29/1066 , H01L29/2003 , H01L29/66212 , H01L29/66893 , H01L29/66924 , H01L29/8083 , H01L29/872
摘要： A method of growing a III-nitride-based epitaxial structure includes providing a substrate in an epitaxial growth reactor and heating the substrate to a predetermined temperature. The method also includes flowing a gallium-containing gas into the epitaxial growth reactor and flowing a nitrogen-containing gas into the epitaxial growth reactor. The method further includes flowing a gettering gas into the epitaxial growth reactor. The predetermined temperature is greater than 1000° C.
摘要翻译：生长III族氮化物基外延结构的方法包括在外延生长反应器中提供衬底并将衬底加热至预定温度。该方法还包括将含镓气体流入外延生长反应器并将含氮气体流入外延生长反应器中。该方法还包括将吸气气体流入外延生长反应器。预定温度大于1000℃

7. 发明申请

WO2013096054A1 METHOD AND SYSTEM FOR JUNCTION TERMINATION IN GALLIUM NITRIDE MATERIALS USING CONDUCTIVITY MODULATION 审中-公开
标题翻译：使用电导率调制的氮化钛材料中结点终止的方法和系统
公开(公告)号：WO2013096054A1
公开(公告)日：2013-06-27
申请号：PCT/US2012/069251
申请日：2012-12-12
申请人： AVOGY, INC. , NIE, Hui , EDWARDS, Andrew, P. , DISNEY, Donald, R. , BROWN, Richard, J. , KIZILYALLI, Isik, C.
发明人： NIE, Hui , EDWARDS, Andrew, P. , DISNEY, Donald, R. , BROWN, Richard, J. , KIZILYALLI, Isik, C.
IPC分类号： H01L21/70
CPC分类号： H01L21/0254 , H01L21/2654 , H01L21/266 , H01L29/0611 , H01L29/0642 , H01L29/0692 , H01L29/2003 , H01L29/66204 , H01L29/66212 , H01L29/66924 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： A semiconductor structure includes a GaN substrate having a first surface and a second surface opposing the first surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a first GaN epitaxial layer of the first conductivity type coupled to the second surface of the GaN substrate and a second GaN epitaxial layer of a second conductivity type coupled to the first GaN epitaxial layer. The second GaN epitaxial layer includes an active device region, a first junction termination region characterized by an implantation region having a first implantation profile, and a second junction termination region characterized by an implantation region having a second implantation profile.
摘要翻译：半导体结构包括具有第一表面和与第一表面相对的第二表面的GaN衬底。 GaN衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括耦合到GaN衬底的第二表面的第一导电类型的第一GaN外延层和耦合到第一GaN外延层的第二导电类型的第二GaN外延层。第二GaN外延层包括有源器件区，第一结端接区，其特征在于具有第一注入分布的注入区，以及第二结终端区，其特征在于具有第二注入分布的注入区。

8. 发明申请

WO2011047176A2 TEXTURED METALLIC BACK REFLECTOR 审中-公开
标题翻译：纹理金属背反射器
公开(公告)号：WO2011047176A2
公开(公告)日：2011-04-21
申请号：PCT/US2010/052706
申请日：2010-10-14
申请人： ALTA DEVICES, INC. , ATWATER, Harry , KAYES, Brendan , KIZILYALLI, Isik, C. , NIE, Hui
发明人： ATWATER, Harry , KAYES, Brendan , KIZILYALLI, Isik, C. , NIE, Hui
IPC分类号： H01L31/0236 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/02327 , H01L31/0236 , H01L31/02366 , H01L31/0304 , H01L31/03046 , H01L31/056 , H01L31/0693 , H01L31/18 , H01L31/184 , H01L31/1844 , H01L31/1852 , H01L31/208 , Y02E10/50 , Y02E10/52 , Y02E10/544
摘要： Embodiments of the invention generally relate to device fabrication of thin films used as solar devices or other electronic devices, and include textured back reflectors utilized in solar applications. In one embodiment, a method for forming a textured metallic back reflector which includes depositing a metallic layer on a gallium arsenide material within a thin film stack, forming an array of metallic islands from the metallic layer during an annealing process, removing or etching material from the gallium arsenide material to form apertures between the metallic islands, and depositing a metallic reflector layer to fill the apertures and cover the metallic islands. In another embodiment, a textured metallic back reflector includes an array of metallic islands disposed on a gallium arsenide material, a plurality of apertures disposed between the metallic islands and extending into the gallium arsenide material, a metallic reflector layer disposed over the metallic islands, and a plurality of reflector protrusions formed between the metallic islands and extending from the metallic reflector layer and into the apertures formed in the gallium arsenide material.
摘要翻译：本发明的实施例一般涉及用作太阳能装置或其他电子装置的薄膜的装置制造，并且包括在太阳能应用中使用的纹理后反射器。在一个实施例中，一种用于形成纹理金属背反射器的方法，其包括在薄膜堆叠内的砷化镓材料上沉积金属层，在退火过程中从金属层形成金属岛阵列，从金属层中去除或蚀刻材料所述砷化镓材料在所述金属岛之间形成孔，并且沉积金属反射器层以填充所述孔并覆盖所述金属岛。在另一个实施例中，纹理金属背反射器包括设置在砷化镓材料上的金属岛阵列，设置在金属岛之间并延伸到砷化镓材料中的多个孔，设置在金属岛上的金属反射层，以及形成在金属岛之间并从金属反射层延伸到形成在砷化镓材料中的孔中的多个反射器突起。

9. 发明申请

WO2014078238A1 LATERAL GAN JFET WITH VERTICAL DRIFT REGION 审中-公开
标题翻译：具有垂直移动区域的横向连杆
公开(公告)号：WO2014078238A1
公开(公告)日：2014-05-22
申请号：PCT/US2013/069469
申请日：2013-11-11
申请人： AVOGY, INC. , NIE, Hui , EDWARDS, Andrew , KIZILYALLI, Isik , BOUR, Dave
发明人： NIE, Hui , EDWARDS, Andrew , KIZILYALLI, Isik , BOUR, Dave , PRUNTY, Thomas, R.
IPC分类号： H01L29/66
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/2003 , H01L29/66909
摘要： A gallium nitride (GaN)-based junction field-effect transistor (JFET) can include a GaN drain region having a top surface extending in a lateral dimension, a source region, and a GaN channel region of a first conductivity type coupled between the source region and the GaN drain region and operable to conduct electrical current between the source region and the GaN drain region. The JFET can also include a blocking layer disposed between the source region and the GaN drain region such that the GaN channel region is operable to conduct the electrical current substantially along the lateral dimension in a laterally-conductive region of the GaN channel region, and a GaN gate region of a second conductivity type coupled to the GaN channel region such that the laterally-conductive region of the GaN channel region is disposed between at least a portion of the blocking layer and the GaN gate region.
摘要翻译：基于氮化镓（GaN）的结场效应晶体管（JFET）可以包括具有在横向尺寸上延伸的顶表面的GaN漏极区域，源极区域和耦合在源极之间的第一导电类型的GaN沟道区域区域和GaN漏极区域并且可操作以在源极区域和GaN漏极区域之间传导电流。 JFET还可以包括设置在源极区域和GaN漏极区域之间的阻挡层，使得GaN沟道区域可操作地在GaN沟道区域的横向导电区域中沿着横向尺寸传导电流，并且 GaN栅极区域，其耦合到GaN沟道区域，使得GaN沟道区域的横向导电区域设置在阻挡层的至少一部分和GaN栅极区域之间。

10. 发明申请

WO2014028268A2 METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS) DIODE BY REGROWTH AND ETCH BACK 审中-公开
标题翻译：通过回流和回蚀刻制造镓氮化物合成P-I-N肖特基（MPS）二极管的方法
公开(公告)号：WO2014028268A2
公开(公告)日：2014-02-20
申请号：PCT/US2013/053751
申请日：2013-08-06
申请人： AVOGY, INC.
发明人： RAJ, Madhan, M. , ALVAREZ, Brian , BOUR, David, P. , EDWARDS, Andrew, P. , NIE, Hui , KIZILYALLI, Isik, C.
IPC分类号： H01L21/329 , H01L29/872
CPC分类号： H01L29/66143 , H01L21/0254 , H01L21/02664 , H01L29/0619 , H01L29/2003 , H01L29/66121 , H01L29/66212 , H01L29/872
摘要： An MPS diode includes a III-nitride substrate characterized by a first conductivity type and a first dopant concentration and having a first side and a second side. The MPS diode also includes a III-nitride epitaxial structure comprising a first III-nitride epitaxial layer coupled to the first side of the substrate, wherein a region of the first III-nitride epitaxial layer comprises an array of protrusions. The III-nitride epitaxial structure also includes a plurality of III-nitride regions of a second conductivity type, each partially disposed between adjacent protrusions. Each of the plurality of III-nitride regions of the second conductivity type comprises a first section laterally positioned between adjacent protrusions and a second section extending in a direction normal to the first side of the substrate. The MPS diode further includes a first metallic structure electrically coupled to one or more of the protrusions and to one or more of the second sections.
摘要翻译： MPS二极管包括特征在于第一导电类型和第一掺杂剂浓度并且具有第一侧和第二侧的III族氮化物衬底。 MPS二极管还包括III族氮化物外延结构，其包括耦合到衬底的第一侧的第一III族氮化物外延层，其中第一III族氮化物外延层的区域包括突起阵列。 III族氮化物外延结构还包括多个第二导电类型的III族氮化物区域，每个部分地设置在相邻的突起之间。第二导电类型的多个III族氮化物区域中的每一个包括横向地位于相邻突起之间的第一部分和在垂直于衬底的第一侧面的方向上延伸的第二部分。 MPS二极管还包括电耦合到一个或多个突起以及一个或多个第二部分的第一金属结构。

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