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1. 发明申请

WO2014078238A1 LATERAL GAN JFET WITH VERTICAL DRIFT REGION 审中-公开
标题翻译：具有垂直移动区域的横向连杆
公开(公告)号：WO2014078238A1
公开(公告)日：2014-05-22
申请号：PCT/US2013/069469
申请日：2013-11-11
申请人： AVOGY, INC. , NIE, Hui , EDWARDS, Andrew , KIZILYALLI, Isik , BOUR, Dave
发明人： NIE, Hui , EDWARDS, Andrew , KIZILYALLI, Isik , BOUR, Dave , PRUNTY, Thomas, R.
IPC分类号： H01L29/66
CPC分类号： H01L29/8083 , H01L29/1066 , H01L29/2003 , H01L29/66909
摘要： A gallium nitride (GaN)-based junction field-effect transistor (JFET) can include a GaN drain region having a top surface extending in a lateral dimension, a source region, and a GaN channel region of a first conductivity type coupled between the source region and the GaN drain region and operable to conduct electrical current between the source region and the GaN drain region. The JFET can also include a blocking layer disposed between the source region and the GaN drain region such that the GaN channel region is operable to conduct the electrical current substantially along the lateral dimension in a laterally-conductive region of the GaN channel region, and a GaN gate region of a second conductivity type coupled to the GaN channel region such that the laterally-conductive region of the GaN channel region is disposed between at least a portion of the blocking layer and the GaN gate region.
摘要翻译：基于氮化镓（GaN）的结场效应晶体管（JFET）可以包括具有在横向尺寸上延伸的顶表面的GaN漏极区域，源极区域和耦合在源极之间的第一导电类型的GaN沟道区域区域和GaN漏极区域并且可操作以在源极区域和GaN漏极区域之间传导电流。 JFET还可以包括设置在源极区域和GaN漏极区域之间的阻挡层，使得GaN沟道区域可操作地在GaN沟道区域的横向导电区域中沿着横向尺寸传导电流，并且 GaN栅极区域，其耦合到GaN沟道区域，使得GaN沟道区域的横向导电区域设置在阻挡层的至少一部分和GaN栅极区域之间。

2. 发明申请

WO2013043712A1 METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE BASED DEVICES 审中-公开
标题翻译：用于氮化镓设备中扩散和植入的方法和系统
公开(公告)号：WO2013043712A1
公开(公告)日：2013-03-28
申请号：PCT/US2012/056101
申请日：2012-09-19
申请人： AVOGY, INC. , BOUR, David, P. , BROWN, Richard, J. , KIZILYALLI, Isik, C. , PRUNTY, Thomas, R. , ROMANO, Linda , EDWARDS, Andrew, P. , NIE, Hui , RAJ, Mahdan
发明人： BOUR, David, P. , BROWN, Richard, J. , KIZILYALLI, Isik, C. , PRUNTY, Thomas, R. , ROMANO, Linda , EDWARDS, Andrew, P. , NIE, Hui , RAJ, Mahdan
IPC分类号： H01L21/425
CPC分类号： H01L21/26546 , H01L21/0332 , H01L21/2258 , H01L21/266 , H01L21/3245 , H01L29/2003 , H01L29/207 , H01L29/66136 , H01L29/66143 , H01L29/8083 , H01L29/861 , H01L29/872
摘要： A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.
摘要翻译：在III族氮化物衬底中形成掺杂区域的方法包括提供III族氮化物衬底并形成具有预定图案并与III族氮化物衬底的一部分耦合的掩模层。 III族氮化物衬底的特征在于第一导电类型，并且预定图案限定III族氮化物衬底的暴露区域。该方法还包括将III族氮化物衬底加热到预定温度，并将双前体气体放置在III族氮化物衬底的暴露区域附近。双前体气体包括氮源和掺杂剂源。该方法还包括将预定温度保持预定时间段，形成与III族氮化物衬底的暴露区域相邻的p型III族氮化物区域，以及去除掩模层。

3. 发明申请

WO2013055631A1 SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS 审中-公开
标题翻译：肖特基二极管与煤炭材料中的包层
公开(公告)号：WO2013055631A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/059250
申请日：2012-10-08
申请人： AVOGY, INC. , EDWARDS, Andrew, P. , NIE, Hui , KIZILYALLI, Isik, C. , BROWN, Richard, J. , BOUR, David, P. , ROMANO, Linda , PRUNTY, Thomas, R.
发明人： EDWARDS, Andrew, P. , NIE, Hui , KIZILYALLI, Isik, C. , BROWN, Richard, J. , BOUR, David, P. , ROMANO, Linda , PRUNTY, Thomas, R.
IPC分类号： H01L29/20
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.
摘要翻译：半导体结构包括III族氮化物衬底，其特征在于具有第一导电类型并且具有与第一侧相对的第一侧和第二侧，第一导电类型的III族氮化物外延层耦合到III族氮化物的第一侧衬底以及耦合到III族氮化物外延层的第二导电类型的多个III族氮化物外延结构。半导体结构还包括耦合到多个III族氮化物外延结构的第一导电类型的III族氮化物外延形成，以及形成与III族氮化物外延形成肖特基接触的金属结构，并与多个III族氮化物外延结构。

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