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1. 发明申请

WO1991004572A1 SUBSTRATE SUPPORT DEVICE FOR CVD APPARATUS 审中-公开
标题翻译：用于CVD装置的基板支撑装置
公开(公告)号：WO1991004572A1
公开(公告)日：1991-04-04
申请号：PCT/JP1990001182
申请日：1990-09-14
申请人： ASM JAPAN K.K. , NEC CORPORATION , SHUTO, Mitsutoshi , HUKAZAWA, Yasushi , OHSAKI, Minoru
发明人： ASM JAPAN K.K. , NEC CORPORATION
IPC分类号： H01L21/205
CPC分类号： C23C16/4582
摘要： A substrate support device having a plurality of support plates each supporting each of a plurality of substrates to be treated and arranged in parallel with one another. Each support plate (13, 23, 33) has an opening (14, 24, 34) having a varying size at its center and a plurality of clips (15, 25, 35) for supporting the substrate over the opening along the periphery of the opening. The size of each opening (14, 24, 34) is determined in accordance with the conditions (flowing conditions, temperature, pressure, etc.) of a reactive gas so that a uniform thin film can be formed on each substrate and an impurity introduced into the thin film can have a suitable concentration.
摘要翻译：一种基板支撑装置，具有多个支撑板，每个支撑板支撑待处理并彼此平行布置的多个基板中的每一个。每个支撑板（13,23,33）具有在其中心处具有变化尺寸的开口（14,24,34）和多个夹子（15,25,35），用于将衬底沿着沿着开幕。每个开口（14,24,34）的尺寸根据反应气体的条件（流动条件，温度，压力等）来确定，使得可以在每个基板上形成均匀的薄膜，并且引入杂质进入薄膜可以有合适的浓度。

2. 发明申请

WO1994018695A1 APPARATUS FOR HEAT TREATMENT 审中-公开
标题翻译：热处理设备
公开(公告)号：WO1994018695A1
公开(公告)日：1994-08-18
申请号：PCT/JP1993000146
申请日：1993-02-05
申请人： ASM JAPAN K.K. , KYOGOKU, Mitsusuke
发明人： ASM JAPAN K.K.
IPC分类号： H01L21/22
CPC分类号： H01L21/67757 , C30B33/00 , F27D99/0073
摘要： An apparatus for heat treatment, which prevents metallic contamination of the object of heat treatment due to a metallic manifold, and which reliably maintains a hermetic separation state between a moving mechanism storage chamber and a reaction chamber even when the pressure inside the former is remarkably lower than the pressure inside the latter. An exhaust port (7) is disposed in the quartz reaction chamber (1) so as to evacuate the inside of this chamber (1), and a sealing flange of a double structure is formed of a quartz flange (9) and a metallic flange (10). When the reaction chamber is under a sealed state, the metallic flange (1) is not exposed to the reaction chamber (1). Further, the sealing flange and a moving body (12) are engaged with each other by springs (3). When the sealing flange (10) is placed in the sealing position, the springs energized by the moving body press the sealing flange against the internal pressure of the reaction chamber.
摘要翻译：一种用于热处理的装置，其防止由于金属歧管而导致的热处理对象的金属污染，并且即使当前者中的压力显着较低时，也可靠地保持移动机构储存室和反应室之间的气密分离状态比后者的压力。排气口（7）设置在石英反应室（1）中，以便抽空该室（1）的内部，双重结构的密封凸缘由石英凸缘（9）和金属凸缘（10）。当反应室处于密封状态时，金属法兰（1）不暴露于反应室（1）。此外，密封凸缘和移动体（12）通过弹簧（3）彼此接合。当密封凸缘（10）处于密封位置时，由移动体激励的弹簧克服反应室的内部压力使密封凸缘受压。

3. 发明申请

WO1997007537A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：生产半导体器件的方法
公开(公告)号：WO1997007537A1
公开(公告)日：1997-02-27
申请号：PCT/JP1996002335
申请日：1996-08-21
申请人： ASM JAPAN K.K. , OKI ELECTRIC INDUSTRY CO., LTD. , KOIZUMI, Satoshi , YOSHIMARU, Masaki , MORI, Yukihiro , FUKUDA, Hideaki
发明人： ASM JAPAN K.K. , OKI ELECTRIC INDUSTRY CO., LTD.
IPC分类号： H01L21/316
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02274 , H01L21/31625 , H01L21/31629
摘要： A method of obtaining a highly reliable semiconductor device by decreasing hygroscopic property of an insulating film of SiOF. In manufacturing a semiconductor device using a fluorine-containing silicon oxide film as an interlayer insultating film, fluorine-containing silicon oxide film is formed in an atmosphere containing an inert gas (14) in addition to source gases (11 to 13).
摘要翻译：通过降低SiOF绝缘膜的吸湿性而获得高度可靠的半导体器件的方法。在制造使用含氟氧化硅膜作为夹层绝缘膜的半导体器件中，除了源气体（11〜13）之外，在含有惰性气体（14）的气氛中也形成含氟氧化硅膜。

4. 发明申请

WO1998037578A1 PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：生产半导体器件的工艺
公开(公告)号：WO1998037578A1
公开(公告)日：1998-08-27
申请号：PCT/JP1997000495
申请日：1997-02-21
申请人： ASM JAPAN K.K. , OKI ELECTRIC INDUSTRY, CO., LTD. , KOIZUMI, Satoshi , YOSHIMARU, Masaki , MORI, Yukihiro , FUKUDA, Hideaki , MATSUKI, Nobuo
发明人： ASM JAPAN K.K. , OKI ELECTRIC INDUSTRY, CO., LTD.
IPC分类号： H01L21/316
CPC分类号： H01L21/02274 , H01L21/02131 , H01L21/31625
摘要： A fluorine silicon oxide film which has a lowered hygroscopicity and an increased compression stress and a process for producing the film are disclosed. A silicon oxide film is formed on a semiconductor wafer with a plasma CVD system by using a mixed gas of a silicon source gas, a fluorine source gas, an oxidizing agent, and an inert gas. The flow rate of the inert gas is at least three times as high as that of the silicon source gas. Tetraethyl orthosilicate (TEOS) is used as the silicon source gas, and hexafluorocarbon (C2F6) is used as the fluorine source gas. Oxygen (O2) is used as the oxidizing agent, and helium (He) is used as the inert gas.
摘要翻译：公开了具有降低的吸湿性和增加的压缩应力的氟氧化硅膜和制造该膜的方法。通过使用硅源气体，氟源气体，氧化剂和惰性气体的混合气体，在等离子体CVD系统的半导体晶片上形成氧化硅膜。惰性气体的流量为硅源气体的流量的至少三倍。使用原硅酸四乙酯（TEOS）作为硅源气体，使用六氟碳（C 2 F 6）作为氟源气体。使用氧（O 2）作为氧化剂，氦（氦）用作惰性气体。

5. 发明申请

WO1994011898A1 LOAD LOCK CHAMBER FOR VERTICAL TYPE HEAT TREATMENT APPARATUS 审中-公开
标题翻译：垂直式热处理装置的装载机
公开(公告)号：WO1994011898A1
公开(公告)日：1994-05-26
申请号：PCT/JP1993001660
申请日：1993-11-12
申请人： ASM JAPAN K.K. , KYOGOKU, Mitsusuke
发明人： ASM JAPAN K.K.
IPC分类号： H01L21/22
CPC分类号： H01L21/67757 , H01L21/67098 , Y10S414/139
摘要： The title chamber has no elevating device which requires the provision of lubricating oil which is a source of particles causing contamination in the chamber. Below a treatment chamber (1) an intermediate chamber (30) is arranged. A supporting stand (34) is provided below the boat table (6) for supporting the objects to be processed, which can be loaded into or unloaded from the treatment chamber (1) gastightly through the intermediate chamber (30). The supporting stand (34) is mounted on a movable member movable vertically by means of a ball screw (13'). A bellows (22) is mounted between the intermediate chamber (30) and the movable member (12').
摘要翻译：标题室没有升降装置，其需要提供作为在室中引起污染的颗粒源的润滑油。在处理室（1）的下方设置有中间室（30）。支撑架（34）设置在船台（6）的下方，用于支撑被处理物体，其可以气密地通过中间室（30）装载到处理室（1）中或从处理室卸载。支撑架（34）安装在借助于滚珠丝杠（13'）可垂直移动的活动件上。波纹管（22）安装在中间室（30）和可动构件（12'）之间。

6. 发明申请

WO1997015073A1 SEMICONDUCTOR TREATMENT APPARATUS 审中-公开
标题翻译：半导体处理设备
公开(公告)号：WO1997015073A1
公开(公告)日：1997-04-24
申请号：PCT/JP1996003013
申请日：1996-10-17
申请人： ASM JAPAN K.K. , SHIMIZU, Akira , PEIRONG, Hu , MIYAKAWA, Hitoshi , TANABE, Nobuaki
发明人： ASM JAPAN K.K.
IPC分类号： H01L21/302
CPC分类号： H01L21/67757 , H01L21/02046 , H01L21/31116 , H01L21/67075 , H01L21/6708
摘要： An apparatus having a simplified structure for uniformly etching a wafer without requiring additional apparatuses, comprising a reaction chamber, at least one injector for emitting an etching gas to the wafer in parallel thereto inside the reaction chamber, a boat for storing semiconductor wafers with a predetermined pitch, a drive mechanism for rotating the boat on its center axis, and a seal for isolating the drive mechanism from the reaction chamber. The injector emits etching gas at a high pressure against the wafers rotating at a high speed in the reaction chamber evacuated to vacuum. The etching gas is uniformly distributed on the surface of the wafers rotating at a high speed, and the wafers are uniformly etched. The problem of contamination does not occur because the interior of the reaction chamber is completely enclosed by the movable seal during the rotation of the wafers. Further, the support boat does not vibrate even at a high rotating speed because the center of gravity coincides with the axis of rotation.
摘要翻译：一种用于均匀蚀刻晶片的简化结构的设备，而不需要额外的设备，包括反应室，用于在反应室内平行地向晶片喷射蚀刻气体的至少一个喷射器，用于存储预定的半导体晶片的船桨距，用于在其中心轴线上旋转船的驱动机构，以及用于将驱动机构与反应室隔离的密封件。喷射器将高压反应中的高速旋转的晶片喷射到真空中的反应室中。蚀刻气体均匀分布在高速旋转的晶片的表面上，并且均匀地蚀刻晶片。不会发生污染的问题，因为在晶片旋转期间反应室的内部被可动密封件完全封闭。此外，由于重心与旋转轴重合，所以支撑舟也不会以高转速旋转。

7. 发明申请

WO1994011899A1 HEAT TREATMENT APPARATUS 审中-公开
标题翻译：热处理设备
公开(公告)号：WO1994011899A1
公开(公告)日：1994-05-26
申请号：PCT/JP1993001661
申请日：1993-11-12
申请人： ASM JAPAN K.K. , KYOGOKU, Mitsusuke , HONMA, Osamu
发明人： ASM JAPAN K.K.
IPC分类号： H01L21/22
CPC分类号： H01L21/67115
摘要： Lowering of the airtightness of the reaction chamber of the appartus due to thermal degradation of the vacuum seal of the connection between the reaction chamber and a manifold is prevented, and particles produced from members of the apparatus due to the heating of the apparatus is prevented from contaminating the inside of the chamber. The wall of the reaction chamber is extended to the location sufficiently apart from the lower end of the heater around the reaction chamber. An exhaust port is provided in the wall to exhaust the reaction chamber.
摘要翻译：防止由于反应室和歧管之间的连接的真空密封件的热降解引起的反应室的气密性降低，并且防止了由于装置的加热而从设备的部件产生的颗粒污染室内。反应室的壁延伸到与反应室周围的加热器的下端充分分离的位置。排气口设置在壁上以排出反应室。

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