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1. 发明申请

WO2008073926A3 FORMATION OF EPITAXIAL LAYERS CONTAINING SILICON 审中-公开
标题翻译：形成含硅的外延层
公开(公告)号：WO2008073926A3
公开(公告)日：2009-01-15
申请号：PCT/US2007087050
申请日：2007-12-11
申请人： APPLIED MATERIALS INC , YE ZHIYUAN , LAM ANDREW , KIM YIHWAN
发明人： YE ZHIYUAN , LAM ANDREW , KIM YIHWAN
IPC分类号： H01L21/20
CPC分类号： H01L29/7834 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/66628 , H01L29/7848
摘要： Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.
摘要翻译：公开了形成含硅外延层的方法。具体实施例涉及半导体器件中的外延层的形成和处理，例如金属氧化物半导体场效应晶体管（MOSFET）器件。在具体实施例中，外延层的形成涉及将处理室中的衬底暴露于包括两个或多个硅源（例如硅烷和高级硅烷）的沉积气体。实施例包括在形成外延层期间流动掺杂剂源，例如磷掺杂剂，并且在没有磷掺杂剂的情况下继续沉积硅源气体。

2. 发明申请

WO2011017339A3 METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER 审中-公开
标题翻译：选择性沉积外延层的方法
公开(公告)号：WO2011017339A3
公开(公告)日：2011-06-30
申请号：PCT/US2010044271
申请日：2010-08-03
申请人： APPLIED MATERIALS INC , YE ZHIYUAN , CHOPRA SAURABH , KIM YIHWAN
发明人： YE ZHIYUAN , CHOPRA SAURABH , KIM YIHWAN
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C16/325 , C23C16/56 , C30B25/04 , C30B25/14 , C30B25/18 , C30B33/12 , H01L21/02381 , H01L21/02538 , H01L21/02573 , H01L21/0262 , H01L21/02642 , H01L21/3065 , Y10S438/929
摘要： Methods for selectively depositing an epitaxial layer are provided herein. In some embodiments, providing a substrate having a monocrystalline first surface and a non-monocrystalline second surface; exposing the substrate to a deposition gas to deposit a layer on the first and second surfaces, the layer comprising a first portion deposited on the first surfaces and a second portion deposited on the second surfaces; and exposing the substrate to an etching gas comprising a first gas comprising hydrogen and a halogen and a second gas comprising at least one of a Group III, IV, or V element to selectively etch the first portion of the layer at a slower rate than the second portion of the layer. In some embodiments, the etching gas comprises hydrogen chloride (HCl) and germane (GeH4).
摘要翻译：本文提供了用于选择性沉积外延层的方法。在一些实施例中，提供具有单晶第一表面和非单晶第二表面的衬底; 将衬底暴露于沉积气体以在第一和第二表面上沉积层，所述层包括沉积在第一表面上的第一部分和沉积在第二表面上的第二部分; 以及将衬底暴露于蚀刻气体，所述蚀刻气体包含含有氢和卤素的第一气体和含有III，IV或V族元素中的至少一种的第二气体以选择性地蚀刻层的第一部分的速率比该层的第二部分。在一些实施例中，蚀刻气体包括氯化氢（HCl）和锗烷（GeH 4）。

3. 发明申请

WO2007130916A3 A METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 审中-公开
标题翻译：一种利用碳化硅合金制成超结晶结构的方法
公开(公告)号：WO2007130916A3
公开(公告)日：2008-04-24
申请号：PCT/US2007067806
申请日：2007-04-30
申请人： APPLIED MATERIALS INC , KIM YIHWAN , FOAD MAJEED A , CHO YONAH , YE ZHIYUAN , ZOJAJI ALI , SANCHEZ ERROL
发明人： KIM YIHWAN , FOAD MAJEED A , CHO YONAH , YE ZHIYUAN , ZOJAJI ALI , SANCHEZ ERROL
IPC分类号： C23C16/00 , B05D3/02 , C30B23/00 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实质退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施例中，提供具有突变p-n结的结构。

4. 发明申请

WO2011106235A3 METHODS AND APPARATUS FOR DEPOSITION PROCESSES 审中-公开
标题翻译：用于沉积过程的方法和设备
公开(公告)号：WO2011106235A3
公开(公告)日：2011-12-22
申请号：PCT/US2011025247
申请日：2011-02-17
申请人： APPLIED MATERIALS INC , MYO NYI O , BAUTISTA KEVIN , YE ZHIYUAN , CHU SCHUBERT S , KIM YIHWAN
发明人： MYO NYI O , BAUTISTA KEVIN , YE ZHIYUAN , CHU SCHUBERT S , KIM YIHWAN
IPC分类号： H01L21/683 , C23C14/50 , C23C16/458 , H01L21/205
CPC分类号： C30B25/12 , C23C16/4586 , H01L21/68735 , H01L21/68742
摘要： Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed.
摘要翻译：本文提供了用于沉积工艺的方法和设备。在一些实施例中，装置可以包括基板支撑件，该基板支撑件包括基座板，该基座板具有布置在基座板的上表面中的凹座并且具有形成在上表面中并限定凹座的唇缘，该凸缘被构造成支撑唇; 以及多个从口袋延伸到基座板的上表面的通风口，以便当衬底设置在唇缘上时排出被捕获在基板的背侧和口袋之间的气体。还公开了利用本发明的装置在基底上沉积层的方法。

5. 发明申请

WO2009108781A3 METHOD OF FORMING AN EMBEDDED SILICON CARBON EPITAXIAL LAYER 审中-公开
标题翻译：嵌入硅碳外延层的方法
公开(公告)号：WO2009108781A3
公开(公告)日：2009-10-22
申请号：PCT/US2009035287
申请日：2009-02-26
申请人： APPLIED MATERIALS INC , BOLAND JOHN , YE ZHIYUAN , KIM YIHWAN
发明人： BOLAND JOHN , YE ZHIYUAN , KIM YIHWAN
IPC分类号： H01L21/20 , H01L21/336
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02639 , H01L29/165 , H01L29/78 , H01L29/7848
摘要： Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.
摘要翻译：公开了用于形成包含硅和碳的嵌入式外延层的方法。具体实施方案涉及在硅晶片上形成包含硅和碳的嵌入式外延层的形成。在具体实施方案中，在衬底或硅晶片上非选择性地形成硅和碳的外延层，去除该层的部分以暴露下面的衬底或硅晶片，并且在暴露的衬底上形成包含硅的外延层，硅片。在具体实施例中，在所得到的含硅外延层上形成栅极。

6. 发明申请

WO2008016650A3 METHODS OF FORMING CARBON-CONTAINING SILICON EPITAXIAL LAYERS 审中-公开
标题翻译：形成含碳硅外延层的方法
公开(公告)号：WO2008016650A3
公开(公告)日：2008-04-10
申请号：PCT/US2007017193
申请日：2007-07-31
申请人： APPLIED MATERIALS INC , KIM YIHWAN , YE ZHIYUAN , ZOJAJI ALI
发明人： KIM YIHWAN , YE ZHIYUAN , ZOJAJI ALI
IPC分类号： H01L21/4763 , H01L21/8234
CPC分类号： C30B25/02 , C30B29/06
摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon- containing silicon layer prior to etching. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种在衬底上形成外延层堆叠的方法。该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。提供了许多其他方面。

7. 发明申请

WO2012149327A2 METHOD AND APPARATUS FOR GAS DELIVERY 审中-公开
标题翻译：用于气体输送的方法和装置
公开(公告)号：WO2012149327A2
公开(公告)日：2012-11-01
申请号：PCT/US2012035465
申请日：2012-04-27
申请人： APPLIED MATERIALS INC , YE ZHIYUAN , KIM YIHWAN
发明人： YE ZHIYUAN , KIM YIHWAN
IPC分类号： C23C16/448 , C23C16/455
CPC分类号： C23C16/4481 , C23C16/45512 , C23C16/45557 , C23C16/45561 , Y10T137/0318 , Y10T137/0329 , Y10T137/0335 , Y10T137/877 , Y10T436/12
摘要： Methods and apparatus for gas delivery are disclosed herein. In some embodiments, a gas delivery system includes an ampoule for storing a precursor in solid or liquid form, a first conduit coupled to the ampoule and having a first end coupled to a first gas source to draw a vapor of the precursor from the ampoule into the first conduit, a second conduit coupled to the first conduit at a first junction located downstream of the ampoule and having a first end coupled to a second gas source and a second end coupled to a process chamber, and a heat source configured to heat the ampoule and at least a first portion of the first conduit from the ampoule to the second conduit and to heat only a second portion of the second conduit, wherein the second portion of the second conduit includes the first junction.
摘要翻译：本文公开了气体输送的方法和装置。在一些实施方案中，气体输送系统包括用于将固体或液体形式的前体储存的安瓿，连接到安瓿的第一导管，并且具有联接到第一气体源的第一端，以将前体的蒸汽从安瓿吸入，所述第一管道，第二管道，其在位于所述安瓿下游的第一连接处联接到所述第一管道，并且具有联接到第二气体源的第一端和联接到处理室的第二端;以及热源，安瓿和至少第一管道的从安瓿到第二管道的第一部分，并仅加热第二管道的第二部分，其中第二管道的第二部分包括第一连接部。

8. 发明公开

KR20180054894A 에피 프로세스들을 위한 웨이퍼 가열을 위한 다이오드 레이저 审中-公开
公开(公告)号：KR20180054894A
公开(公告)日：2018-05-24
申请号：KR20187013160
申请日：2016-10-07
申请人： APPLIED MATERIALS INC
发明人： CHU SCHUBERT S , HOLMGREN DOUGLAS E , SHAH KARTIK , GAJENDRA PALAMURALI , MYO NYI O , RAO PREETHAM , BAUTISTA KEVIN JOSEPH , YE ZHIYUAN , HILKENE MARTIN A , SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O
IPC分类号： H01L21/67 , H01L21/324 , H01L21/683 , H01L29/861
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/324 , H01L21/68764
摘要： 본개시내용의실시예들은일반적으로반도체처리를위한장치및 방법에관한것이고, 더구체적으로는열 프로세스챔버에관한것이다. 열프로세스챔버는기판지지체, 기판지지체위에배치되는제1의복수의가열부재, 및제1의복수의가열부재위에배치되는하나이상의고에너지복사소스어셈블리를포함할수 있다. 하나이상의고에너지복사소스어셈블리는처리동안기판지지체상에배치되는기판상의차가운영역들의국소적가열을제공하기위해이용된다. 기판의국소화된가열은온도프로파일을개선하고, 이는결국퇴적균일성을개선한다.

9. 发明公开

KR20180022998A 반도체 디바이스 审中-公开
标题翻译：半导体器件
公开(公告)号：KR20180022998A
公开(公告)日：2018-03-06
申请号：KR20187003370
申请日：2015-07-03
申请人： APPLIED MATERIALS INC , COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , CENTRE NAT RECH SCIENT
发明人： BAO XINYU , YE ZHIYUAN , PIN JEAN BAPTISTE , SANCHEZ ERROL , BASSANI FRANCK , BARON THIERRY , BOGUMILOWICZ YANN , HARTMANN JEAN MICHEL
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02543 , H01L21/02546 , H01L21/02549
摘要： 평면및 평면을갖는결정구조, 및 평면의방향에서 평면과약 0.3도내지약 0.7도의각도를형성하는표면을갖는반도체기판; 및반도체기판상에형성된화합물반도체층을갖는반도체디바이스가개시된다. 화합물반도체층은역위상경계들을갖지않고, 약 200㎚내지약 1,000㎚의두께를갖는다.
摘要翻译： <1,0,0>平面和<1,1,0>平面和<1,0,0>平面之间在<1,1,0>平面方向上的角度和约0.3度平面内的约0.7度之间的角度一种具有用于形成栅电极的表面的半导体衬底; 并且在半导体衬底上形成化合物半导体层。化合物半导体层不具有反向有序系统，并且具有约200nm至约1,000nm的厚度。

10. 发明专利

JP2009111368A Selective formation of silicon carbon epitaxial layer 有权
标题翻译：选择性形成硅碳外延层
公开(公告)号：JP2009111368A
公开(公告)日：2009-05-21
申请号：JP2008258743
申请日：2008-10-03
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： YE ZHIYUAN , CHOPRA SAURABH , LAM ANDREW , KIM YIHWAN
IPC分类号： H01L21/205 , C23C16/42 , H01L29/78
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To provide methods for formation of epitaxial layers containing n-doped silicon.
SOLUTION: Formation of the n-doped epitaxial layer in semiconductor devices, for example, metal oxide semiconductor field effect transistor (MOSFET) devices involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second temperature higher than that during deposition and a pressure higher than that during deposition.
COPYRIGHT: (C)2009,JPO&INPIT

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