专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008027186A2 INTEGRATED PROCESS FOR SPUTTER DEPOSITION OF A CONDUCTIVE BARRIER LAYER, ESPECIALLY AN ALLOY OF RUTHENIUM AND TANTALUM, UNDERLYING COPPER OR COPPER ALLOY SEED LAYER 审中-公开
标题翻译：导电阻挡层溅射沉积的综合工艺，特别是铜和钽的合金，铜或铜合金层
公开(公告)号：WO2008027186A2
公开(公告)日：2008-03-06
申请号：PCT/US2007017967
申请日：2007-08-14
申请人： APPLIED MATERIALS INC , WANG RONGJUN , CHUNG HUA , TANG XIANMIN , WANG JENN YUE , WANG WEI D , TANAKA YOICHIRO , YU JICK M , GOPALRAJA PRABURAM
发明人： WANG RONGJUN , CHUNG HUA , TANG XIANMIN , WANG JENN YUE , WANG WEI D , TANAKA YOICHIRO , YU JICK M , GOPALRAJA PRABURAM
IPC分类号： B32B7/00 , B05D5/12 , B32B3/00 , C23C14/00 , C23C16/00
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).
摘要翻译：用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。一个实施例包括穿过介电层（86）的孔（88）中的RuTaN的阻挡层（132），RuTa的粘合层（112）和形成铜电镀衬垫的铜籽晶层（114）。钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。阻挡层和粘附层可以被溅射沉积。其他铂族元素代替钌和其他难熔金属代替钽。当退火时，铝合金化成RuTa（192,194）具有防潮层。铜触点（232,238）包括RuTa的不同合金分数，以将功函数移动到硅的掺杂类型（216,218）。

2. 发明申请

WO2007102970A3 ETCH AND SIDEWALL SELECTIVITY IN PLASMA SPUTTERING 审中-公开
标题翻译：等离子喷溅中的ETCH和SIDEWALL选择性
公开(公告)号：WO2007102970A3
公开(公告)日：2008-10-09
申请号：PCT/US2007003482
申请日：2007-02-08
申请人： APPLIED MATERIALS INC , TANG XIANMIN , GOPALRAJA PRABURAM , WANG JENN YUE , YU JICK
发明人： TANG XIANMIN , GOPALRAJA PRABURAM , WANG JENN YUE , YU JICK
IPC分类号： C23C14/35
CPC分类号： C23C14/165 , C23C14/5873 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J2237/334 , H01L21/2855 , H01L21/32136 , H01L21/76844
摘要： A substrate processing method practiced in a plasma sputter reactor (8) including an RF coil (44) and two or more coaxial electromagnets (78, 80), at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
摘要翻译：在包括RF线圈（44）和两个或更多个同轴电磁体（78,80）的等离子体溅射反应器（8）中实施的衬底处理方法，其中至少两个以不同的半径缠绕。在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除侧壁不对称。例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。在一个实施例中，转向拉直晶片边缘附近的轨迹。在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。本发明也可以应用于其它材料，例如铜。

3. 发明申请

WO2010048094A2 PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION 审中-公开
标题翻译：采用增强型铜离子电镀技术的PVD CU种子悬臂再次溅镀
公开(公告)号：WO2010048094A2
公开(公告)日：2010-04-29
申请号：PCT/US2009061184
申请日：2009-10-19
申请人： APPLIED MATERIALS INC , CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
发明人： CAO YONG , TANG XIANMIN , GUNG TZA-JING , GOPALRAJA PRABURAM
IPC分类号： H01L21/203
CPC分类号： C23C14/185 , C23C14/046 , C23C14/5833 , H01L21/2855 , H01L21/76843 , H01L21/76865 , H01L21/76871 , H01L21/76883
摘要： A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate.
摘要翻译：提供了用于在图案化衬底上沉积金属的方法和装置。在具有第一能量的物理气相沉积工艺中形成金属层。使用第二能量在金属层上执行第二物理气相沉积工艺，其中沉积与脆性和塑性表面改性工艺相互作用以在基板上形成基本上共形的金属层。

4. 发明申请

WO2009091830A3 CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW 审中-公开
标题翻译： CU表面等离子体处理以改善GAPFILL窗口
公开(公告)号：WO2009091830A3
公开(公告)日：2009-10-15
申请号：PCT/US2009031002
申请日：2009-01-14
申请人： APPLIED MATERIALS INC , LUO QIAN , SUNDARRAJAN ARVIND , CHUNG HUA , TANG XIANMIN , YU JICK M , NARASIMHAN MURALI K
发明人： LUO QIAN , SUNDARRAJAN ARVIND , CHUNG HUA , TANG XIANMIN , YU JICK M , NARASIMHAN MURALI K
IPC分类号： H01L21/3205 , H01L21/28
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀工艺期间选择性地控制导电材料的沉积速率的方法和设备。在通过电镀填充场区域中的开口之前，掺杂剂主要结合到衬底场区上的导电种子层中。衬底位于一个或多个处理室中，形成阻挡层和导电晶种层。向腔室提供掺杂剂前体并在有或没有电压偏置的情况下离子化。掺杂剂主要结合到场区上的导电种子层中。场区上的导电晶种层的电导率相对于开口中的导电晶种层的电导率降低，导致在电镀期间场区上的金属的初始沉积速率低，并且沉积的金属中很少或没有空隙形成在开幕式。

5. 发明申请

WO2010114823A3 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A3
公开(公告)日：2011-01-13
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

6. 发明申请

WO2007014160A2 METHOD AND APPARATUS FOR IN-SITU SUBSTRATE SURFACE ARC DETECTION 审中-公开
标题翻译：用于现场基板表面弧检测的方法和装置
公开(公告)号：WO2007014160A2
公开(公告)日：2007-02-01
申请号：PCT/US2006028685
申请日：2006-07-21
申请人： APPLIED MATERIALS INC , LOO DAVID H , TANG XIANMIN , SANSONI STEVEN V , TSAI CHENG-HSIUNG , RENGARAJAN SURAJ
发明人： LOO DAVID H , TANG XIANMIN , SANSONI STEVEN V , TSAI CHENG-HSIUNG , RENGARAJAN SURAJ
IPC分类号： H02H3/00
CPC分类号： H01L21/67069 , G01R31/1227 , H01J37/32935 , H01J2237/0206 , H01J2237/2007 , H01L21/67253 , H01L21/6831
摘要： Embodiments of a method and apparatus for in-situ substrate surface arc detection are provided herein. In one embodiment, an apparatus for detecting arcing on the surface of a substrate on an electrostatic chuck, having an electrostatic chucking assembly, disposed within a semiconductor processing chamber includes a voltage divider having an input configured to receive an input signal from the electrostatic chucking assembly representative of a voltage on a surface of a substrate; and a monitoring circuit coupled to the voltage divider for generating an output signal indicative of whether arcing has occurred on the surface of a substrate.
摘要翻译：本文提供了用于原位基底表面弧检测的方法和装置的实施例。在一个实施例中，一种用于检测设置在半导体处理室内的具有静电夹持组件的静电卡盘上的基板的表面上的电弧放电的装置包括：分压器，其具有被配置为从静电吸盘组件接收输入信号的输入代表衬底表面上的电压; 以及耦合到所述分压器的监视电路，用于产生指示在基板的表面上是否发生电弧的输出信号。

7. 发明申请

WO2011156349A3 METHODS FOR FORMING INTERCONNECT STRUCTURES 审中-公开
标题翻译：形成互连结构的方法
公开(公告)号：WO2011156349A3
公开(公告)日：2012-04-05
申请号：PCT/US2011039414
申请日：2011-06-07
申请人： APPLIED MATERIALS INC , LEE JOUNG JOO , TANG XIANMIN , GUNG TZA-JING
发明人： LEE JOUNG JOO , TANG XIANMIN , GUNG TZA-JING
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： H01L21/2855 , C23C14/046 , C23C14/345 , C23C14/3492 , H01L21/76882
摘要： Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material.
摘要翻译：本文提供形成互连结构的方法。在一些实施例中，用于在衬底上形成互连的方法可以包括在衬底的上表面顶部沉积材料，并且通过第一沉积工艺沉积位于衬底中的特征的一个或多个表面上，所述第一沉积工艺以更快的速度沉积材料在上表面上比在特征的底表面上的速率; 通过第二沉积工艺将所述材料沉积在所述基底的上表面顶部和所述特征的一个或多个表面上方，所述第二沉积工艺在所述特征的底表面上以比在所述基底的上表面上更大的速率沉积材料; 以及加热沉积的材料以将沉积的材料拉向特征的底表面，以至少部分地用沉积的材料填充该特征。

8. 发明申请

WO2011143527A2 PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION 审中-公开
标题翻译：用于改善颗粒减少的工艺套件
公开(公告)号：WO2011143527A2
公开(公告)日：2011-11-17
申请号：PCT/US2011036395
申请日：2011-05-13
申请人： APPLIED MATERIALS INC , RASHEED MUHAMMAD , WANG RONGJUN , LIU ZHENDONG , FU XINYU , TANG XIANMIN
发明人： RASHEED MUHAMMAD , WANG RONGJUN , LIU ZHENDONG , FU XINYU , TANG XIANMIN
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： C23C14/35 , C23C14/564 , H01J37/32853 , H01J37/32871 , H01J37/34 , H01J37/3411
摘要： Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
摘要翻译：本文提供了用于改善颗粒减少的装置。在一些实施例中，一种装置可以包括一个包括具有上部和下部的一体式金属体的处理套件屏蔽件，并且具有穿过一体式金属体设置的开口，其中，上部包括面向开口的表面被配置为围绕物理气相沉积室的目标设置并隔开，并且其中所述面向开口的表面构造成在目标溅射期间限制所述一体金属体的上部的上表面上的颗粒沉积材料从物理气相沉积室的目标。

9. 发明申请

WO2010114823A2 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
标题翻译： PVD室的喷射目标
公开(公告)号：WO2010114823A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029171
申请日：2010-03-30
申请人： APPLIED MATERIALS INC , LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
发明人： LIU ZHENDONG , WANG RONGJUN , TANG XIANMIN , GANDIKOTA SRINIVAS , GUNG TZA-JING , RASHEED MUHAMMAD M
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： C23C14/3407 , H01J37/342 , H01J37/3423
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.
摘要翻译：公开了包括目标组件的目标组件和PVD室。目标组件包括具有凹形目标的目标。当在PVD室中使用时，凹目标在设置在溅射室中的基板上提供更径向均匀的沉积。

10. 发明申请

WO2012018770A3 CONTROL OF PLASMA PROFILE USING MAGNETIC NULL ARRANGEMENT BY AUXILIARY MAGNETS 审中-公开
标题翻译：使用辅助磁铁的磁性空安排来控制等离子体轮廓
公开(公告)号：WO2012018770A3
公开(公告)日：2012-08-09
申请号：PCT/US2011046204
申请日：2011-08-02
申请人： APPLIED MATERIALS INC , LIU GUOJUN , TANG XIANMIN , LUO QIAN , CAO YONG
发明人： LIU GUOJUN , TANG XIANMIN , LUO QIAN , CAO YONG
IPC分类号： H01L21/203 , H05H1/46
CPC分类号： H01F7/0278 , H01J37/3408 , H01J37/3461
摘要： Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber.
摘要翻译：本文提供了用于物理气相沉积（PVD）室的磁控管及其使用方法。在一些实施例中，装置可以包括具有旋转轴线的支撑构件; 多个第一磁体，其在所述旋转轴线的第一侧上联接到所述支撑构件，并且具有在垂直于所述支撑构件的第一方向上定向的第一极性; 以及第二磁体，其在所述旋转轴线的与所述第一侧相反的第二侧上与所述支撑构件相耦合，并且具有在与所述第一方向相反的第二方向上定向的第二极性。在一些实施例中，该装置能够形成包括调制物理气相沉积（PVD）室中的局部等离子体均匀性的一个或多个磁零点的磁场。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式