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1. 发明申请

WO2010115117A2 LAMP WITH INTERNAL FUSE SYSTEM 审中-公开
标题翻译：带内部保险丝系统的灯
公开(公告)号：WO2010115117A2
公开(公告)日：2010-10-07
申请号：PCT/US2010029802
申请日：2010-04-02
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , MYO NYI OO , RANISH JOSEPH M , TAKAHASHI AKIO
发明人： RAMACHANDRAN BALASUBRAMANIAN , MYO NYI OO , RANISH JOSEPH M , TAKAHASHI AKIO
IPC分类号： H01K1/66 , H01J61/50 , H01J61/56
CPC分类号： H01K1/66
摘要： Embodiments of a lamp having an internal fuse system are provided herein. In some embodiments, a lamp may include a transparent housing; a filament disposed in the housing, the filament having a main body disposed between a first end and a second end of the filament; a first conductor coupled to the filament at the first end of the filament; a first interceptor bar disposed in the housing and beneath the main body of the filament, wherein the first interceptor bar is coupled to the second end of the filament; a second conductor disposed proximate the first end of the filament and conductively coupled to the second end of the filament via the first interceptor bar, wherein the first interceptor bar is positioned such that an electrical short forms between the first and second conductors when the main body of the filament contacts the first interceptor bar.
摘要翻译：本文提供具有内部熔丝系统的灯的实施例。在一些实施例中，灯可以包括透明外壳; 布置在所述壳体中的细丝，所述细丝具有设置在所述细丝的第一端和第二端之间的主体; 在灯丝的第一端处耦合到灯丝的第一导体; 设置在所述壳体中并在所述灯丝主体下方的第一拦截棒，其中所述第一拦截杆连接到所述灯丝的第二端; 第二导体，其设置在灯丝的第一端附近并且经由第一拦截棒与导电丝的第二端导电连接，其中第一拦截棒被定位成使得当第一和第二导体之间形成电短路时，的灯丝接触第一拦截棒。

2. 发明申请

WO2012149331A3 OPTICAL ENDPOINT DETECTION SYSTEM 审中-公开
标题翻译：光端点检测系统
公开(公告)号：WO2012149331A3
公开(公告)日：2013-03-28
申请号：PCT/US2012035469
申请日：2012-04-27
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
发明人： RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
IPC分类号： H01L21/66
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

3. 发明申请

WO2011043961A2 EPITAXIAL CHAMBER WITH CROSS FLOW 审中-公开
标题翻译：具有交叉流动的外延室
公开(公告)号：WO2011043961A2
公开(公告)日：2011-04-14
申请号：PCT/US2010050593
申请日：2010-09-28
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , SANCHEZ ERROL ANTONIO C , MYO NYI O , BAUTISTA KEVIN JOSEPH , JUNEJA HARPREET SINGH , ZHU ZUOMING
发明人： RAMACHANDRAN BALASUBRAMANIAN , SANCHEZ ERROL ANTONIO C , MYO NYI O , BAUTISTA KEVIN JOSEPH , JUNEJA HARPREET SINGH , ZHU ZUOMING
IPC分类号： H01L21/205
CPC分类号： C23C16/455 , C23C16/45523 , C30B25/14 , H01L21/02532 , H01L21/02573 , H01L21/0262
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber having a substrate support disposed therein to support a processing surface of a substrate at a desired position within the process chamber; a first inlet port to provide a first process gas over the processing surface of the substrate in a first direction; a second inlet port to provide a second process gas over the processing surface of the substrate in a second direction different from the first direction, wherein an azimuthal angle measured between the first direction and the second direction with respect to a central axis of the substrate support is up to about 145 degrees; and an exhaust port disposed opposite the first inlet port to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了用于处理基板的方法和设备。在一些实施例中，一种用于处理衬底的装置包括：处理室，其具有设置在其中的衬底支撑件，以在处理室内的期望位置处支撑衬底的处理表面; 第一入口端口，用于在第一方向上在基板的处理表面上提供第一处理气体; 第二入口端口，用于在与所述第一方向不同的第二方向上在所述衬底的所述处理表面上提供第二处理气体，其中在所述第一方向和所述第二方向之间相对于所述衬底支撑件的中心轴线测量的方位角高达约145度; 以及与第一入口相对设置的排气口，以从处理室排出第一和第二处理气体。

4. 发明申请

WO2010059701A3 TEMPERATURE UNIFORMITY MEASUREMENT DURING THERMAL PROCESSING 审中-公开
标题翻译：热处理过程中的温度均匀度测量
公开(公告)号：WO2010059701A3
公开(公告)日：2010-08-12
申请号：PCT/US2009064956
申请日：2009-11-18
申请人： APPLIED MATERIALS INC , ADERHOLD WOLFGANG , JALLEPALLY RAVI , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON M , ILIOPOULOS ILIAS
发明人： ADERHOLD WOLFGANG , JALLEPALLY RAVI , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON M , ILIOPOULOS ILIAS
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位差分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

5. 发明申请

WO2007114987A3 ADAPTIVE CONTROL METHOD FOR RAPID THERMAL PROCESSING OF A SUBSTRATE 审中-公开
标题翻译：基板快速热处理的自适应控制方法
公开(公告)号：WO2007114987A3
公开(公告)日：2008-10-23
申请号：PCT/US2007063482
申请日：2007-03-07
申请人： APPLIED MATERIALS INC , RANISH JOSEPH MICHAEL , DIXIT TARPAN , JENNINGS DEAN , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON , ADERHOLD WOLFGANG , ADAMS BRUCE , CHANG WEN TEH
发明人： RANISH JOSEPH MICHAEL , DIXIT TARPAN , JENNINGS DEAN , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON , ADERHOLD WOLFGANG , ADAMS BRUCE , CHANG WEN TEH
IPC分类号： G01L9/06
CPC分类号： H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to methods for the rapid thermal processing (RTP) of a substrate. Embodiments of the invention include controlling a thermal process using either a real-time adaptive control algorithm or by using a control algorithm that is selected from a suite of fixed control algorithms designed for a variety of substrate types. Selection of the control algorithm is based on optical properties of the substrate measured during the thermal process. In one embodiment, a combination of control algorithms are used, wherein the majority of lamp groupings are controlled with a fixed control algorithm and a substantially smaller number of lamp zones are controlled by an adaptive control algorithm.
摘要翻译：本发明一般涉及用于衬底的快速热处理（RTP）的方法。本发明的实施例包括使用实时自适应控制算法或通过使用从针对各种基板类型设计的一套固定控制算法中选择的控制算法来控制热处理。控制算法的选择基于在热处理期间测量的衬底的光学性质。在一个实施例中，使用控制算法的组合，其中大多数灯分组由固定控制算法控制，并且通过自适应控制算法来控制基本上较少数量的灯区。

6. 发明申请

WO2006047062A3 METHOD AND APPARATUS FOR LOW TEMPERATURE PYROMETRY USEFUL FOR THERMALLY PROCESSING SILICON WAFERS 审中-公开
标题翻译：用于热处理硅膜的低温度色谱法的方法和装置
公开(公告)号：WO2006047062A3
公开(公告)日：2007-06-21
申请号：PCT/US2005036082
申请日：2005-10-05
申请人： APPLIED MATERIALS INC , HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
发明人： HUNTER AARON MUIR , RAMACHANDRAN BALASUBRAMANIAN , TANASA CORINA ELENA , RAMANUJAM RAJESH S , DIXIT TARPAN T
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D21/0014 , H01L21/67115 , H01L21/67248 , H05B3/68
摘要： A rapid thermal processing (RTP) system (110) including a transmission pyrometer (12) monitoring the temperature dependent absorption of the silicon wafer (32) for radiation from the RTP lamps (46) at a reduced power level. A look-up table is created relating unnormalized values of photodetector photocurrents with wafer and radiant lamp temperatures. A calibrating step (170) measures the photocurrent with known wafer and lamp temperatures and all photocurrents measured thereafter are accordingly normalized (142). The transmission pyrometer may be used for closed loop control for thermal treatments below 500°C or used in the pre-heating phase for a higher temperature process including radiation pyrometry in closed loop control. The pre-heating temperature ramp rate may be controlled by measuring the initial ramp rate and readjusting the lamp power accordingly. Radiation and transmission pyrometers may be included in an integrated structure (190) with a beam splitter (204) dividing radiation from the wafer.
摘要翻译：包括透射高温计（12）的快速热处理（RTP）系统（110），其以降低的功率水平监测用于来自RTP灯（46）的辐射的硅晶片（32）的温度依赖性吸收。创建了一个查找表，其涉及具有晶圆和辐射灯温度的光电检测器光电流的非标准化值。校准步骤（170）测量具有已知晶片和灯温度的光电流，并且随后测量的所有光电流相应地被归一化（142）。传输高温计可用于低于500°C的热处理的闭环控制，或者在预热阶段用于更高温度的过程，包括闭环控制中的辐射高温计。可以通过测量初始斜坡速率并相应地重新调整灯泡功率来控制预热温度升高速率。辐射和透射高温计可以被包括在分束器（204）的整体结构（190）中，分束器（204）分隔来自晶片的辐射。

7. 发明申请

WO2006078513A3 INTEGRATED MULTI-BAND TRANSCEIVER FOR USE IN MOBILE COMMUNICATION DEVICE 审中-公开
标题翻译：用于移动通信设备的集成多带收发器
公开(公告)号：WO2006078513A3
公开(公告)日：2007-10-04
申请号：PCT/US2006000899
申请日：2006-01-11
申请人： SKYWORKS SOLUTIONS INC , BEAMISH NORMAN J , DARIOUSH AGAHI , RAMACHANDRAN BALASUBRAMANIAN
发明人： BEAMISH NORMAN J , DARIOUSH AGAHI , RAMACHANDRAN BALASUBRAMANIAN
IPC分类号： H04M1/00
CPC分类号： H04B1/3805
摘要： A multi-band communication device configured with a mobile communication device for voice or data communication over a cellular, satellite or other communication network and configured with an auxiliary communication system configured to receive and/or transmit an auxiliary communication signal. The mobile communication device and auxiliary communication system are integrated into the same components within the multi-band communication device thereby allowing the components to share the processing tasks associated with each communication device within the multi-band communication device. The auxiliary communication device may be configured to operate during standby mode of the mobile communication device, such as during reception of a paging signal. The auxiliary communication device may comprise, but is not limited to, AM or FM radio, personal communication devices such as FRS, GMRS, or weather band radio.
摘要翻译：一种多频带通信设备，配置有用于通过蜂窝，卫星或其它通信网络进行语音或数据通信的移动通信设备，并配置有被配置为接收和/或发送辅助通信信号的辅助通信系统。移动通信设备和辅助通信系统被集成到多频带通信设备中的相同组件中，从而允许组件共享与多频带通信设备内的每个通信设备相关联的处理任务。辅助通信设备可以被配置为在移动通信设备的待机模式期间操作，诸如在接收寻呼信号期间。辅助通信设备可以包括但不限于AM或FM无线电，诸如FRS，GMRS或天气波段无线电的个人通信设备。

8. 发明专利

JP2012044192A Method of improving oxide growth rate of selective oxidation processes 审中-公开
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：JP2012044192A
公开(公告)日：2012-03-01
申请号：JP2011201340
申请日：2011-09-15
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： YOKOTA YOSHITAKA , TAM NORMAN I , RAMACHANDRAN BALASUBRAMANIAN , RIPLEY MARTIN JOHN
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： PROBLEM TO BE SOLVED: To provide a method for selective oxidation of silicon containing materials in a semiconductor device.SOLUTION: In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized. Only a polysilicon layer and a gate oxide layer are selectively oxidized without oxidizing the metals or other layers. The best selective oxidation conditions are achieved when pressures are approximately 150-800 torr, especially approximately 250-600 torr, for example 450 torr, and temperatures are higher than approximately 700°C, especially approximately 800-1000°C, for example 950°C.
摘要翻译：待解决的问题：提供一种在半导体器件中选择性氧化含硅材料的方法。解决方案：一方面，快速热处理装置用于在富氢气氛中通过高压原位蒸汽生成来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。只有多晶硅层和栅极氧化物层被选择性氧化而不氧化金属或其它层。当压力为约150-800乇，特别是约250-600乇（例如450乇）时，获得最佳的选择氧化条件，温度高于约700℃，特别是约800-1000℃，例如950℃ C。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2009158918A Method for improving oxide growth rate of selective oxidation process 有权
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：JP2009158918A
公开(公告)日：2009-07-16
申请号：JP2008244684
申请日：2008-09-24
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： YOKOTA YOSHITAKA , TAM NORMAN I , RAMACHANDRAN BALASUBRAMANIAN , RIPLEY MARTIN JOHN
IPC分类号： H01L21/316 , H01L21/336 , H01L29/78
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： PROBLEM TO BE SOLVED: To provide a method for selective oxidation of silicon-containing materials in a semiconductor device. SOLUTION: A rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2008288598A Controlled annealing method 审中-公开
标题翻译：控制退火方法
公开(公告)号：JP2008288598A
公开(公告)日：2008-11-27
申请号：JP2008132074
申请日：2008-05-20
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RANISH JOSEPH MICHAEL , RAMACHANDRAN BALASUBRAMANIAN , JALLEPALLY RAVI , RAMAMURTHY SUNDAR , BEDAPLAM S ACHUTARAMAN , HAAS BRIAN , HUNTER AARON , ADERHOLD WOLFGANG
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , H01L21/67115
摘要： PROBLEM TO BE SOLVED: To provide a method for rapid thermal annealing.
SOLUTION: A method for rapid thermal annealing is disclosed. When a substrate is inserted into an annealing chamber, heating starts by heat radiated from chamber components that have been heated when a previous substrate has been annealed. Thus, while the substrate is inserted, the tip of the substrate may have a raised temperature while the rear edge may have room temperature, thus causing a temperature gradient to be generated across the substrate. Even if the substrate is completely inserted in the annealing chamber, the temperature gradient may be generated. By compensating for the temperature gradient across the substrate, the substrate can be annealed uniformly.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种快速热退火的方法。解决方案：公开了一种用于快速热退火的方法。当将衬底插入退火室中时，通过从先前衬底退火后被加热的腔室部件辐射的热量开始加热。因此，当插入基板时，基板的尖端可以具有升高的温度，而后边缘可能具有室温，从而导致在基板上产生温度梯度。即使基板完全插入退火室中，也可能产生温度梯度。通过补偿基板上的温度梯度，可以使基板均匀退火。版权所有（C）2009，JPO＆INPIT

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