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1. 发明专利

AU2010100958A4 Trampoline Deck 未知
公开(公告)号：AU2010100958A4
公开(公告)日：2010-10-07
申请号：AU2010100958
申请日：2010-09-01
申请人： HUNTER AARON GEOFFREY , HUNTER CHARLOTTE MARY MRS
发明人： HUNTER AARON , HUNTER CHARLOTTE
IPC分类号： A63B5/11 , A63B5/16

2. 发明申请

WO2013066652A1 RAPID THERMAL PROCESSING CHAMBER 审中-公开
标题翻译：快速热处理室
公开(公告)号：WO2013066652A1
公开(公告)日：2013-05-10
申请号：PCT/US2012/061290
申请日：2012-10-22
申请人： APPLIED MATERIALS, INC. , MORITZ, Kirk , HUNTER, Aaron, Muir
发明人： MORITZ, Kirk , HUNTER, Aaron, Muir
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/67109 , H01L21/6719 , H01L21/67248
摘要： Embodiments of the invention generally relate to RTP chambers. The chambers generally include a chamber body and chamber lid. The chamber body includes a substrate support having multiple zones of resistive heaters to heat substrates positioned on the substrate support. The chamber body also optionally includes a cooling channel to mitigate thermal stress and a thermally insulating liner disposed therein for containing heat generated during thermal processing. The chamber lid includes a lid body having an opening therethrough, and a reflective plate disposed within the opening. A plurality of pyrometers are positioned within the reflective plate to measure the temperature of a substrate at a plurality of locations across the substrate corresponding to the zones of the substrate support. The temperature of each zone is adjusted in response to the signals from the plurality of pyrometers.
摘要翻译：本发明的实施例一般涉及RTP室。这些室通常包括室主体和室盖。室主体包括具有多个电阻加热器区域的基板支撑件，用于加热位于基板支撑件上的基板。室主体还可选地包括用于减轻热应力的冷却通道和设置在其中的用于包含热处理期间产生的热量的隔热衬套。室盖包括具有穿过其的开口的盖体和设置在开口内的反射板。多个高温计定位在反射板内，以测量穿过衬底对应于衬底支撑的区域的多个位置处的衬底的温度。响应于来自多个高温计的信号来调节每个区域的温度。

3. 发明申请

WO2013033637A3 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053527
申请日：2012-08-31
申请人： APPLIED MATERIALS INC , ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
发明人： ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用向处理区域递送脉冲能量的渐进熔化过程来识别和熔化基板的处理区域。然后使用将脉冲能量递送到该区域的渐进结晶过程对治疗区域进行再结晶。在渐进结晶过程中输送的脉冲能量被选择为在熔融材料冻结时将小晶体转化为大晶体。

4. 发明申请

WO2012149331A3 OPTICAL ENDPOINT DETECTION SYSTEM 审中-公开
标题翻译：光端点检测系统
公开(公告)号：WO2012149331A3
公开(公告)日：2013-03-28
申请号：PCT/US2012035469
申请日：2012-04-27
申请人： APPLIED MATERIALS INC , RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
发明人： RAMACHANDRAN BALASUBRAMANIAN , ISHII MASATO , HUNTER AARON MUIR
IPC分类号： H01L21/66
CPC分类号： B08B9/46 , B08B3/08 , B08B3/10 , C23C16/4405 , C23C16/52 , G01N21/94 , G01N2021/8416 , H01L21/67253
摘要： Methods and apparatus for determining an endpoint of a process chamber cleaning process are provided. In some embodiments, a processing system having an endpoint detection system may include a process chamber having internal surfaces requiring periodic cleaning due to processes performed in the process chamber; and an endpoint detection system that includes a light detector positioned to detect light reflected off of a first internal surface of the process chamber; and a controller coupled to the light detector and configured to determine an endpoint of a cleaning process based upon the detected reflected light.
摘要翻译：提供了用于确定处理室清洁过程的端点的方法和装置。在一些实施例中，具有端点检测系统的处理系统可以包括处理室，其具有由于处理室中执行的处理而需要定期清洁的内表面; 以及端点检测系统，其包括被定位成检测从所述处理室的第一内表面反射的光的光检测器; 以及耦合到光检测器并被配置为基于检测到的反射光来确定清洁处理的端点的控制器。

5. 发明申请

WO2013033637A2 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053527
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
发明人： ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

6. 发明申请

WO2013019358A1 SUBSTRATE SUPPORTING EDGE RING WITH COATING FOR IMPROVED SOAK PERFORMANCE 审中-公开
标题翻译：基座支撑边缘带涂层以改善SOAK性能
公开(公告)号：WO2013019358A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/045453
申请日：2012-07-03
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph M. , HUNTER, Aaron Muir
发明人： RANISH, Joseph M. , HUNTER, Aaron Muir
IPC分类号： H01L21/683
CPC分类号： H01L21/68757 , H01L21/67115 , H01L21/68735 , Y10S269/909
摘要： Embodiments of the present invention provide a substrate supporting edge ring for supporting a substrate. In one embodiment, a substrate support ring is provided. The substrate support ring comprises an annular body. The annular body comprises an outer band extending radially inward from an outer annular sidewall; and a substrate supporting region extending inward from an inner portion of the outer band, wherein the annular body comprises a first material that is exposed and at least a portion of the substrate supporting region is covered with a coating comprising a second material that is different than the first material.
摘要翻译：本发明的实施例提供一种用于支撑基板的基板支撑边缘环。在一个实施例中，提供了衬底支撑环。衬底支撑环包括环形体。环形体包括从外部环形侧壁径向向内延伸的外部带; 以及从所述外带的内部向内延伸的衬底支撑区域，其中所述环形体包括暴露的第一材料，并且所述衬底支撑区域的至少一部分被涂覆物覆盖，所述涂层包括不同于第一种材料。

7. 发明申请

WO2012115681A1 AMBIENT LAMINAR GAS FLOW DISTRIBUTION IN LASER PROCESSING SYSTEMS 审中-公开
标题翻译：激光加工系统中的环境层流气体分布
公开(公告)号：WO2012115681A1
公开(公告)日：2012-08-30
申请号：PCT/US2011/045968
申请日：2011-07-29
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HUNTER, Aaron Muir
发明人： MOFFATT, Stephen , HUNTER, Aaron Muir
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： F27D21/00 , F27D5/0037 , F27D2021/0078 , H01L21/67115
摘要： A method and apparatus for annealing semiconductor substrates is disclosed. The apparatus has an annealing energy source and a substrate support, with a shield member disposed between the annealing energy source and the substrate support. The shield member is a substantially flat member having a dimension larger than a substrate processed on the substrate support, with a window covering a central opening in the substantially flat member. The central opening has a gas inlet portal and a gas outlet portal, each in fluid communication with a gas inlet plenum and gas outlet plenum, respectively. A connection member is disposed around the central opening and holds the window over the central opening. Connection openings in the connection member are in fluid communication with the gas inlet plenum and gas outlet plenum, respectively, through a gas inlet conduit and a gas outlet conduit formed through the connection member.
摘要翻译：公开了半导体衬底退火的方法和装置。该装置具有退火能量源和衬底支撑件，其中屏蔽构件设置在退火能量源和衬底支撑件之间。屏蔽构件是具有大于在基板支撑件上处理的基板的尺寸的基本上平坦的构件，窗口覆盖基本平坦的构件中的中心开口。中心开口具有气体入口入口和气体出口入口，每个入口入口和气体出口通道分别与气体入口气室和气体出口增压室流体连通。连接构件设置在中心开口周围并将窗口保持在中心开口的上方。连接构件中的连接开口分别通过气体入口导管和通过连接构件形成的气体出口导管与气体入口气室和气体出口增压室流体连通。

8. 发明申请

WO2011112802A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：WO2011112802A3
公开(公告)日：2012-01-05
申请号：PCT/US2011027881
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
发明人： GANGULY UDAYAN , RANISH JOSEPH M , HUNTER AARON M , TANG JING , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , SUN SHIYU
IPC分类号： H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

9. 发明申请

WO2010059701A3 TEMPERATURE UNIFORMITY MEASUREMENT DURING THERMAL PROCESSING 审中-公开
标题翻译：热处理过程中的温度均匀度测量
公开(公告)号：WO2010059701A3
公开(公告)日：2010-08-12
申请号：PCT/US2009064956
申请日：2009-11-18
申请人： APPLIED MATERIALS INC , ADERHOLD WOLFGANG , JALLEPALLY RAVI , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON M , ILIOPOULOS ILIAS
发明人： ADERHOLD WOLFGANG , JALLEPALLY RAVI , RAMACHANDRAN BALASUBRAMANIAN , HUNTER AARON M , ILIOPOULOS ILIAS
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位差分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

10. 发明申请

WO2010054076A3 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 审中-公开
标题翻译：具有微定位系统的快速热处理室
公开(公告)号：WO2010054076A3
公开(公告)日：2010-07-29
申请号：PCT/US2009063394
申请日：2009-11-05
申请人： APPLIED MATERIALS INC , SORABJI KHURSHED , RANISH JOSEPH M , ADERHOLD WOLFGANG , HUNTER AARON M , KOELMEL BLAKE R , LERNER ALEXANDER N , MERRY NIR
发明人： SORABJI KHURSHED , RANISH JOSEPH M , ADERHOLD WOLFGANG , HUNTER AARON M , KOELMEL BLAKE R , LERNER ALEXANDER N , MERRY NIR
IPC分类号： H01L21/324 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

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