专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2010054206A3 IMPROVED PROCESS EQUIPMENT ARCHITECTURE 审中-公开
标题翻译：改进工艺设备建筑
公开(公告)号：WO2010054206A3
公开(公告)日：2010-07-22
申请号：PCT/US2009063568
申请日：2009-11-06
申请人： APPLIED MATERIALS INC , NEWMAN JACOB , KANAWADE DINESH , SCHWARTZ MIRIAM , MERRY NIR , HAAG MICHAEL THOMAS
发明人： NEWMAN JACOB , KANAWADE DINESH , SCHWARTZ MIRIAM , MERRY NIR , HAAG MICHAEL THOMAS
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/6719
摘要： Embodiments of the present invention relate to improvements to single-substrate, multi-chamber processing platform architecture for minimizing fabrication facility floor space requirements. Prior art systems require significant floor space around all sides to allow for adequate installation and servicing. Embodiments of the present invention provide platforms that allow for servicing the chambers and supporting systems via a front and rear of the platform allowing multiple, side-by-side platform placement within a fabrication facility, while providing improved serviceability of the platform components.
摘要翻译：本发明的实施例涉及对用于最小化制造设备占地面积要求的单基板多室处理平台架构的改进。现有技术的系统需要围绕所有侧面的显着的地板空间以允许适当的安装和维修。本发明的实施例提供了平台，其允许经由平台的前部和后部维护腔室和支撑系统，从而允许在制造设备内多个并排平台放置，同时提供平台组件的改进的可维护性。

2. 发明申请

WO2010123711A3 SUBSTRATE COOL DOWN CONTROL 审中-公开
标题翻译：基板冷却控制
公开(公告)号：WO2010123711A3
公开(公告)日：2011-01-20
申请号：PCT/US2010030741
申请日：2010-04-12
申请人： APPLIED MATERIALS INC , NEWMAN JACOB , KANAWADE DINESH , BARANDICA HENRY , MERRY NIR
发明人： NEWMAN JACOB , KANAWADE DINESH , BARANDICA HENRY , MERRY NIR
IPC分类号： H01L21/02
CPC分类号： G01K13/00 , G01J5/0003 , G01J5/0007 , G01J5/02 , G01J5/0255 , G01K11/18 , H01L21/67103 , H01L21/67248
摘要： Methods and apparatus for precise substrate cool down control are provided. Apparatus for measuring temperature of substrates may include a cool down plate to support a substrate; a sensor to provide data corresponding to a temperature of the substrate when disposed on the cool down plate; and a computer coupled to the sensor to determine the temperature of the substrate from the sensor data. A method for measuring the temperature of a substrate may include providing a substrate to be cooled to a chamber having a cool down plate disposed therein, a sensor to provide data corresponding to a temperature of the substrate, and a computer coupled to the sensor; sensing a first temperature of the substrate after a predetermined first time interval has elapsed; comparing the first temperature to a predetermined temperature; and determining whether the first temperature is greater than, equal to, or less than the predetermined temperature.
摘要翻译：提供了精确的基板冷却控制的方法和装置。用于测量衬底温度的装置可包括用于支撑衬底的冷却板; 传感器，当设置在所述冷却板上时，提供对应于所述基板的温度的数据; 以及耦合到所述传感器的计算机，以从所述传感器数据确定所述基板的温度。用于测量衬底的温度的方法可以包括将待冷却的衬底设置到设置有冷却板的腔室，传感器以提供对应于衬底的温度的数据和耦合到传感器的计算机; 在经过预定的第一时间间隔之后感测衬底的第一温度; 将第一温度与预定温度进行比较; 以及确定所述第一温度是否大于，等于或小于所述预定温度。

3. 发明申请

WO2010022309A2 VERTICAL SUBSTRATE BUFFERING SYSTEM 审中-公开
标题翻译：垂直底板缓冲系统
公开(公告)号：WO2010022309A2
公开(公告)日：2010-02-25
申请号：PCT/US2009054577
申请日：2009-08-21
申请人： APPLIED MATERIALS INC , MERRY NIR , NEWMAN JACOB
发明人： MERRY NIR , NEWMAN JACOB
IPC分类号： H01L21/677 , H01L21/00
CPC分类号： H01L21/67769 , Y10S414/14
摘要： A substrate buffering system is provided herein. In some embodiments, a substrate buffering system may include a frame having a vertical shaft disposed therethrough; two storage platforms, one each disposed on either side of the frame, each to receive a substrate carrier thereon; and a transfer mechanism coupled to the vertical shaft and capable of vertical movement along the vertical shaft and lateral movement sufficient to move the transfer mechanism over either of the two storage platforms. The transfer mechanism may further include a telescoping fork arm capable of laterally extending in a first direction and in a second direction corresponding to lateral positions of the two storage platforms on either side of the frame. In some embodiments, the substrate may be a wafer. In some embodiments, the substrate may be a semiconductor wafer.
摘要翻译：本文提供了一种衬底缓冲系统。在一些实施例中，衬底缓冲系统可以包括具有穿过其的竖直轴的框架; 两个存储平台，一个设置在框架的任一侧上，每个用于在其上接收衬底载体; 以及耦合到垂直轴并且能够沿垂直轴垂直移动的传送机构和足以使传送机构移动到两个存储平台中的任何一个上的横向移动。传送机构还可以包括能够在第一方向和第二方向上横向延伸的伸缩叉臂，对应于框架两侧的两个存储平台的横向位置。在一些实施例中，衬底可以是晶片。在一些实施例中，衬底可以是半导体晶片。

4. 发明申请

WO2011112823A3 APPARATUS AND METHODS FOR CYCLICAL OXIDATION AND ETCHING 审中-公开
公开(公告)号：WO2011112823A3
公开(公告)日：2012-01-05
申请号：PCT/US2011027922
申请日：2011-03-10
申请人： APPLIED MATERIALS INC , GANGULY UDAYAN , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , MARIN JOSE A , BALAKRISHNA AJIT , NEWMAN JACOB , HICKERSON STEPHEN C
发明人： GANGULY UDAYAN , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , SCOTNEY-CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , MARIN JOSE A , BALAKRISHNA AJIT , NEWMAN JACOB , HICKERSON STEPHEN C
IPC分类号： H01L21/3065
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.

5. 发明申请

WO2010098993A3 HDD PATTERN IMPLANT SYSTEM 审中-公开
标题翻译： HDD图案植入系统
公开(公告)号：WO2010098993A3
公开(公告)日：2010-11-11
申请号：PCT/US2010024163
申请日：2010-02-12
申请人： APPLIED MATERIALS INC , FOAD MAJEED A , NEWMAN JACOB , MARIN JOSE ANTONIO , HOFFMAN DANIEL J , MOFFATT STEPHEN , VERHAVERBEKE STEVEN
发明人： FOAD MAJEED A , NEWMAN JACOB , MARIN JOSE ANTONIO , HOFFMAN DANIEL J , MOFFATT STEPHEN , VERHAVERBEKE STEVEN
IPC分类号： G11B5/73 , G11B5/82 , G11B5/84
CPC分类号： G11B5/82 , C23C14/48 , C23C14/50 , C23C16/00 , C23F1/00 , G11B5/84 , G11B5/855 , H01L21/673 , H01L21/677 , H01L21/687
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.
摘要翻译：提供了用于形成具有磁性图案化表面的基板的方法和设备。包含一种或多种具有磁性的材料的磁性层形成在基板上。对磁性层进行构图工艺，其中改变磁性层表面的选定部分，使得改变部分具有与未改变部分不同的磁性，而不改变衬底的形貌。在图案化的磁性层上沉积保护层和润滑剂层。图案化是通过许多将基材暴露于不同形式能量的过程来完成的。本文公开的装置和方法能够同时处理基板的两个主表面，或者通过翻转来顺序处理。在一些实施例中，衬底表面的磁性可以通过等离子体暴露均匀地改变，然后通过暴露于图案化的能量而选择性地恢复。

6. 发明申请

WO2010039462A3 BALANCED PURGE SLIT VALVE 审中-公开
标题翻译：平衡式泥浆阀
公开(公告)号：WO2010039462A3
公开(公告)日：2010-06-10
申请号：PCT/US2009057538
申请日：2009-09-18
申请人： APPLIED MATERIALS INC , NEWMAN JACOB , BURNS DOUGLAS H
发明人： NEWMAN JACOB , BURNS DOUGLAS H
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/67126 , Y10T137/4259
摘要： Methods and apparatus for providing a gas to a slit valve opening are provided herein. In one embodiment, a slit valve is described. The slit valve includes a housing having an opening, the opening defined by a plurality of interior sidewalls and sized to allow a substrate to pass therethrough, a door adapted to selectively seal the opening, a gas inlet formed in the housing, and a plurality of nozzles disposed in or on at least one of the plurality of interior sidewalls, each of the plurality of nozzles in fluid communication with the gas inlet and the opening.
摘要翻译：本发明提供了一种向狭缝阀开口提供气体的方法和装置。在一个实施例中，描述了狭缝阀。所述狭缝阀包括具有开口的壳体，所述开口由多个内侧壁限定，其尺寸允许基底通过，门适于选择性地密封所述开口，形成在所述壳体中的气体入口，以及多个设置在所述多个内侧壁中的至少一个内侧的喷嘴，所述多个喷嘴中的每一个与所述气体入口和所述开口流体连通。

7. 发明公开

KR20180021244A 순환적인 산화 및 에칭을 위한 장치 및 방법 审中-公开
标题翻译：用于循环氧化和蚀刻的装置和方法
公开(公告)号：KR20180021244A
公开(公告)日：2018-02-28
申请号：KR20187004991
申请日：2011-03-10
申请人： APPLIED MATERIALS INC
发明人： GANGULY UDAYAN , YOKOTA YOSHITAKA , OLSEN CHRISTOPHER S , SCOTNEY CASTLE MATTHEW D , NGUYEN VICKY , SRINIVASAN SWAMINATHAN , LIU WEI , SWENBERG JOHANES F , MARIN JOSE A , BALAKRISHNA AJIT , NEWMAN JACOB , HICKERSON STEPHEN C
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/67 , H01L21/687 , H01L27/11521
CPC分类号： H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L21/76232 , H01L27/11521
摘要： 협소한피치애플리케이션들에적합한반도체디바이스들의제조를위한장치및 방법들이여기에서설명된다. 산화물층을형성하기위해재료층의표면을산화시키는단계; 에칭프로세스에의해산화물층의적어도일부를제거하는단계; 및재료층이원하는형상으로형성될때까지, 산화및 제거프로세스들을순환적으로반복하는단계에의해, 재료층을형성및/또는성형하도록구성된다양한단일챔버들이개시된다. 몇몇실시예들에서, 재료층은반도체디바이스의플로팅게이트일수 있다.
摘要翻译：本文描述了用于制造适用于窄间距应用的半导体器件的设备和方法及其制造方法。公开了被配置为通过氧化材料层的表面以形成氧化物层来形成和/或成形材料层的各种单室; 通过蚀刻工艺去除至少一些氧化物层; 并且循环地重复氧化和去除过程直到材料层形成为期望的形状。在一些实施例中，材料层可以是半导体器件的浮置栅极。

8. 发明专利

JP2008263177A Software sequencer for integrated substrate processing system 审中-公开
标题翻译：用于集成基板处理系统的软件排序器
公开(公告)号：JP2008263177A
公开(公告)日：2008-10-30
申请号：JP2008052401
申请日：2008-03-03
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： EMANI SHYAM , WANG CHONGYANG , HICKERSON STEPHEN , SWENBERG JOHANES , NEWMAN JACOB
IPC分类号： H01L21/02 , H01L21/205
CPC分类号： G05B19/41865 , G05B2219/34418 , Y02P90/20
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for scheduling a process sequence to achieve maximum throughput and process consistency in a cluster tool having a set of constraints. SOLUTION: The method for scheduling a process sequence comprises a step for determining an initial individual schedule by assigning resources to perform the process sequence, a step for calculating a fundamental period, a step for detecting resource conflicts in a schedule generated from the individual schedule and the fundamental period, and a step for adjusting the individual schedule to remove the resource conflicts. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于调度处理序列以在具有一组约束的集群工具中实现最大吞吐量和过程一致性的装置和方法。解决方案：用于调度处理序列的方法包括通过分配资源来执行处理序列来确定初始个体调度的步骤，用于计算基本周期的步骤，用于检测从该时间表生成的调度表中的资源冲突的步骤个人时间表和基本时期，以及调整个人时间表以消除资源冲突的步骤。版权所有（C）2009，JPO＆INPIT

9. 发明专利

SG11201610307PA CAROUSEL BATCH EPITAXY SYSTEM 未知
公开(公告)号：SG11201610307PA
公开(公告)日：2017-01-27
申请号：SG11201610307P
申请日：2015-06-09
申请人： APPLIED MATERIALS INC
发明人： NEWMAN JACOB
IPC分类号： H01L21/02 , H01L21/20
摘要： Embodiments relate to methods and apparatus for batch processing of substrates during epitaxial film formation. In one example, a process chamber includes a chamber lid and substrate support. The chamber lid includes a centrally disposed gas inlet and a first gas deflector coupled to the chamber lid and adapted to direct the first process gas laterally across surfaces of a plurality of substrates. The lid also includes one or more gas outlets disposed radially outward of the centrally disposed gas inlet, and a plurality of lamps disposed between the centrally disposed gas inlet and the one or more gas outlets. The substrate support is rotatable and includes both a gas passage formed therein for introducing a second process gas to the internal volume of the process chamber and a second gas deflector adapted to direct the second process gas laterally across the surfaces of the plurality of substrates.

10. 发明专利

MY161518A HDD PATTERN IMPLANT SYSTEM 未知
公开(公告)号：MY161518A
公开(公告)日：2017-04-28
申请号：MYPI2011003723
申请日：2010-02-12
申请人： APPLIED MATERIALS INC
发明人： FOAD MAJEED A , NEWMAN JACOB , MARIN JOSE ANTONIO , HOFFMAN DANIEL J , MOFFATT STEPHEN , VERHAVERBEKE STEVEN
IPC分类号： G11B5/73 , G11B5/82 , G11B5/84
摘要： METHODS AND APPARATUS (300) FOR FORMING SUBSTRATES HAVING MAGNETICALLY PATTERNED SURFACES IS PROVIDED.A MAGNETIC LAYER COMPRISING ONE OR MORE MATERIALS HAVING MAGNETIC PROPERTIES IS FORMED ON A SUBSTRATE (320; 324; 340).THE MAGNETIC LAYER IS SUBJECTED TO A PATTERNING PROCESS IN WHICH SELECTED PORTIONS OF THE SURFACE OF THE MAGNETIC LAYER ARE ALTERED SUCH THAT THE ALTERED PORTIONS HAVE DIFFERENT MAGNETIC PROPERTIES FROM THE NON-ALTERED PORTIONS WITHOUT CHANGING THE TOPOGRAPHY OF THE SUBSTRATE (320; 324; 340).A PROTECTIVE LAYER AND A LUBRICANT LAYER ARE DEPOSITED OVER THE PATTERNED MAGNETIC LAYER.THE PATTERNING IS ACCOMPLISHED THROUGH A NUMBER OF PROCESSES THAT EXPOSE SUBSTRATES TO ENERGY OF VARYING FORMS.APPARATUS (300) AND METHODS DISCLOSED HEREIN ENABLE PROCESSING OF TWO MAJOR SURFACES OF A SUBSTRATE SIMULTANEOUSLY, OR SEQUENTIALLY BY FLIPPING.IN SOME EMBODIMENTS, MAGNETIC PROPERTIES OF THE SUBSTRATE SURFACE MAY BE UNIFORMLY ALTERED BY PLASMA EXPOSURE AND THEN SELECTIVELY RESTORED BY EXPOSURE TO PATTERNED ENERGY.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式