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1. 发明专利

AU2003232155A1 METHOD OF FORMING A RIM PHASE SHIFTING MASK AND USING THE RIM PHASE SHIFTING MASK TO FORM A SEMICONDUCTOR DEVICE 未知
公开(公告)号：AU2003232155A1
公开(公告)日：2004-02-23
申请号：AU2003232155
申请日：2003-05-15
申请人： MOTOROLA INC
发明人： NORDQUIST KEVIN J , DAUKSHER WILLIAM J , GARZA CESAR M , WU WEI E , ROMAN BERNARD J , MANGAT PANWITTER J S
IPC分类号： G03F1/29 , G03F7/20 , H01L21/027 , G03F1/00 , G03F7/09
摘要： A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.

2. 发明专利

AU2003247863A1 LITHOGRAPHIC TEMPLATE HAVING A REPAIRED GAP DEFECT 未知
公开(公告)号：AU2003247863A1
公开(公告)日：2004-02-16
申请号：AU2003247863
申请日：2003-07-11
申请人： MOTOROLA INC
发明人： MANCINI DAVID P , DAUKSHER WILLIAM J , NORDQUIST KEVIN J , RESNICK DOUGLAS J
IPC分类号： G03F7/20 , B29C59/16 , B41C20060101 , G03F1/60 , G03F7/00 , G03F7/16 , G21K5/00 , H01L21/027 , H01L21/3205 , H01L21/4763 , H05B6/00
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template ( 10 ) is formed having a relief structure ( 26 ) and a repaired gap defect ( 36 ) within the relief structure ( 26 ). The template ( 10 ) is used in the fabrication of a semiconductor device ( 40 ) for affecting a pattern in device ( 40 ) by positioning the template ( 10 ) in close proximity to semiconductor device ( 40 ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template ( 10 ) is then removed to complete fabrication of semiconductor device ( 40 ).

3. 发明申请

WO2004011258A2 LITHOGRAPHIC TEMPLATE HAVING A REPAIRED GAP DEFECT 审中-公开
标题翻译：具有修复的缺陷的平台模板
公开(公告)号：WO2004011258A2
公开(公告)日：2004-02-05
申请号：PCT/US0321759
申请日：2003-07-11
申请人： MOTOROLA INC
发明人： MANCINI DAVID P , DAUKSHER WILLIAM J , NORDQUIST KEVIN J , RESNICK DOUGLAS J
IPC分类号： G03F7/20 , B29C59/16 , B41C20060101 , G03F1/60 , G03F7/00 , G03F7/16 , G21K5/00 , H01L21/027 , H01L21/3205 , H01L21/4763 , H05B6/00 , B41C
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

4. 发明申请

WO02079876A2 LITHOGRAPHIC TEMPLATE 审中-公开
标题翻译：光刻模板
公开(公告)号：WO02079876A2
公开(公告)日：2002-10-10
申请号：PCT/US0205718
申请日：2002-02-27
申请人： MOTOROLA INC
发明人： RESNICK DOUR J , NORDQUIST KEVIN J
IPC分类号： G03F7/20 , B29C43/02 , G03F7/00 , H01L21/027
CPC分类号： B29C43/003 , B29C43/021 , B29C2043/025 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/0017
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (20, 30, 42) is formed having a substrate (22, 32) and a template pedestal (24, 34) having formed thereon an uppermost surface an etched pattern or relief image (26, 36, 48). The template (20, 30, 42) is used in the fabrication of a semiconductor device (44) for affecting a pattern in the device (44) by positioning the template (20, 30, 42) in close proximity to semiconductor device (44) having a radiation sensitive material (50) formed thereon and applying a pressure (52) to cause the radiation sensitive material (50) to flow into the relief image (48) present on the template (42). Radiation (53) is then applied through the template (42) so as to further cure portions of the radiation sensitive material (50) and further define the pattern in the radiation sensitive material (50). The template (20, 30, 42) is then removed to complete fabrication of semiconductor device (44).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及光刻模板，形成光刻模板的方法以及用该光刻模板形成器件的方法。光刻模板（20,30,42）形成为具有衬底（22,32）和模板基座（24,34），其上形成有蚀刻图案或浮雕图像（26,36,48）的最上表面。模板（20,30,42）用于制造半导体器件（44），用于通过将模板（20,30,42）定位成靠近半导体器件（44）而影响器件（44）中的图案），其上形成有辐射敏感材料（50）并施加压力（52）以使所述辐射敏感材料（50）流入存在于所述模板（42）上的浮雕图像（48）中。然后通过模板（42）施加辐射（53），以进一步固化辐射敏感材料（50）的部分，并进一步限定辐射敏感材料（50）中的图案。然后移除模板（20,30,42）以完成半导体器件（44）的制造。

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