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1. 发明申请

WO2011149790A3 COMPONENT TEMPERATURE CONTROL BY COOLANT FLOW CONTROL AND HEATER DUTY CYCLE CONTROL 审中-公开
标题翻译：通过冷却液流量控制和加热器占空比控制的组件温度控制
公开(公告)号：WO2011149790A3
公开(公告)日：2012-01-26
申请号：PCT/US2011037436
申请日：2011-05-20
申请人： APPLIED MATERIALS INC , MAHADESWARASWAMY CHETAN , RAMASWAMY KARTIK , LIAO BRYAN , SHOJI SERGIO , NGUYEN DUY D , NOORBAKHSH HAMID , PALAGASHVILI DAVID
发明人： MAHADESWARASWAMY CHETAN , RAMASWAMY KARTIK , LIAO BRYAN , SHOJI SERGIO , NGUYEN DUY D , NOORBAKHSH HAMID , PALAGASHVILI DAVID
IPC分类号： H05H1/24 , H01L21/205 , H01L21/3065
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却液流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的变化。

2. 发明申请

WO2011093979A2 FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备的前级温度控制
公开(公告)号：WO2011093979A2
公开(公告)日：2011-08-04
申请号：PCT/US2010062435
申请日：2010-12-29
申请人： APPLIED MATERIALS INC , MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
发明人： MAHADESWARASWAMY CHETAN , MERRY WALTER R , SHOJI SERGIO FUKUDA , ZHANG CHUNLEI , PATTAR YASHASWINI , NGUYEN DUY D , TSONG TINA , NEVIL SHANE C , BUCHBERGER DOUGLAS A JR , SILVEIRA FERNANDO M , MAYS BRAD L , RAMASWAMY KARTIK , NOORBAKHSH HAMID
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32009 , G05B6/02 , H01J37/3244 , H01J37/32715 , H01J37/32935 , H01J2237/334 , H05H1/0081
摘要： Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。

3. 发明申请

WO2011068730A2 RECONFIGURABLE MULTI-ZONE GAS DELIVERY HARDWARE FOR SUBSTRATE PROCESSING SHOWERHEADS 审中-公开
标题翻译：可重构的多区域气体输送硬件用于基板处理喷头
公开(公告)号：WO2011068730A2
公开(公告)日：2011-06-09
申请号：PCT/US2010057959
申请日：2010-11-24
申请人： APPLIED MATERIALS INC , NOORBAKHSH HAMID , CARDUCCI JAMES D
发明人： NOORBAKHSH HAMID , CARDUCCI JAMES D
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/32091 , H01J37/3244 , H01J37/32449 , Y10T29/49716
摘要： Reconfigurable showerheads used in process chambers for substrate processing are provided herein. In some embodiments, a reconfigurable showerhead may include a body having one or more plenums disposed therein; and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones. In some embodiments, a substrate processing system may include a process chamber having a reconfigurable showerhead coupled to a gas supply for providing one or more process gases to the process chamber, the reconfigurable showerhead including a body having one or more plenums disposed therein and one or more inserts configured to be disposed within the one or more plenums, wherein the one or more inserts divide the reconfigurable showerhead into a plurality of zones.
摘要翻译：本文提供了用于基板处理的处理室中使用的可重构喷头。在一些实施例中，可重新配置的喷头可以包括具有布置在其中的一个或多个增压室的主体; 以及一个或多个插入件，其被配置为布置在所述一个或多个增压室内，其中所述一个或多个插入件将所述可重新配置的喷淋头分成多个区域。在一些实施例中，衬底处理系统可以包括处理室，处理室具有耦合到气体供应的可重新配置的喷头，用于向处理室提供一种或多种处理气体，可重新配置的喷头包括具有布置在其中的一个或多个增压室的主体，更多的插入件被构造成布置在一个或多个增压室内，其中一个或多个插入件将可重新配置的喷淋头分成多个区域。

4. 发明申请

WO2011094143A3 APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SHOWERHEAD 审中-公开
标题翻译：用于控制喷头的温度均匀性的装置
公开(公告)号：WO2011094143A3
公开(公告)日：2011-11-24
申请号：PCT/US2011022202
申请日：2011-01-24
申请人： APPLIED MATERIALS INC , BERA KALLOL , CARDUCCI JAMES D , NOORBAKHSH HAMID , ELIZAGA LARRY D , BUCHBERGER JR DOUGLAS A , NGUYEN ANDREW
发明人： BERA KALLOL , CARDUCCI JAMES D , NOORBAKHSH HAMID , ELIZAGA LARRY D , BUCHBERGER JR DOUGLAS A , NGUYEN ANDREW
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： F28F7/02 , H01L21/67109
摘要： An apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead is provided herein. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead may include a showerhead having a substrate facing surface and one or more plenums for providing one or more process gases through a plurality of gas distribution holes formed through the substrate facing surface of the showerhead; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the showerhead to flow a heat transfer fluid.
摘要翻译：本文提供了一种用于控制喷头的面向基板的表面的热均匀性的设备。在一些实施例中，喷头的基板面向表面的热均匀性可被控制为更均匀。在一些实施例中，喷头的基板面向表面的热均匀性可以被控制为以期望的图案不均匀。在一些实施例中，用于控制喷头的面向基板的表面的热均匀性的设备可包括具有面向基板的表面的喷头和用于通过多个气体分配孔提供一种或多种工艺气体的一个或多个充气室，面对基板的喷头表面; 以及多个具有基本相等的流体传导性的流动路径，其设置在喷头内以使传热流体流动。

5. 发明公开

KR20180054892A 감소된 배면 플라즈마 점화를 갖는 샤워헤드 审中-公开
公开(公告)号：KR20180054892A
公开(公告)日：2018-05-24
申请号：KR20187013105
申请日：2016-07-26
申请人： APPLIED MATERIALS INC
发明人： WANG HAITAO , NOORBAKHSH HAMID , ZHANG CHUNLEI , SHOJI SERGIO FUKUDA , RAMASWAMY KARTIK , SMITH ROLAND , MAYS BRAD L
IPC分类号： H01L21/02 , H01L21/205 , H05H1/46
CPC分类号： C23C16/45565 , C23C16/4401 , H01J37/3244
摘要： 본개시내용의실시예들은프로세싱챔버에서사용하기위한샤워헤드어셈블리에관한것이다. 샤워헤드어셈블리는, 플라즈마점화로부터생기는부식성라디칼들을완화시켜챔버내의입자이슈들및 금속오염을감소시키기위해, 가스분배플레이트와베이스플레이트사이에정의된공간에배치된다공성인서트를포함한다. 다공성인서트는, 갭전기장강도를감소시키기위해사용되는전도성재료, 이를테면금속이거나, 또는유전체재료, 이를테면, 세라믹, 폴리테트라플루오로에틸렌, 폴리아미드-이미드, 또는고주파수및 강한전기장들의조건들하에서높은전기장강도및 낮은유전손실을갖는다른재료들일수 있다. 따라서, 절연파괴임계치가향상된다. 다공성인서트는샤워헤드배면플라즈마점화를감소시키고그리고/또는제거할수 있으며, 가스분배플레이트의가스홀들을커버하는다수의동심의좁은링들을포함할수 있다.

6. 发明专利

JP2001358121A CORRECTION FOR WAFER TEMPERATURE DRIFT IN PLASMA REACTOR BASED ON CONTINUOUS WAFER TEMPERATURE MEASUREMENT USING IN-SITU WAFER TEMPERATURE OPTICAL PROBE 失效
公开(公告)号：JP2001358121A
公开(公告)日：2001-12-26
申请号：JP2001150139
申请日：2001-04-11
申请人： APPLIED MATERIALS INC
发明人： NOORBAKHSH HAMID , WELCH MIKE , LUSCHER PAUL E , SALIMIAN SIAMAK , BRAD MEISU
IPC分类号： H01L21/302 , C30B25/16 , C30B31/18 , H01L21/00 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and device by which the plasma processing of a semiconductor wafer can be controlled precisely. SOLUTION: This method solves the problem of continuously monitoring wafer temperature during treatment, using an optical or fluororescevce optical temperature sensor, including an optical fiber having an end next to and facing the backside of the wafer. The optical fiber is accommodated, without having to disturb plasma treatment by providing an axial void, through which the optical fiber passes in one of wafer lift pins. The end of the fiber facing the wafer backside coincides with the end of the hollow wafer lift pin. The other end is coupled to temperature probe electronics on the outside of the reactor chamber via an 'external' optical fiber.

7. 发明专利

JP2007329485A Apparatus and method for processing substrate 有权
标题翻译：装置和处理基板的方法
公开(公告)号：JP2007329485A
公开(公告)日：2007-12-20
申请号：JP2007159820
申请日：2007-06-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To monitor small changes caused during processing substrates. SOLUTION: An apparatus of processing a substrate of the present invention has: a chamber processing the substrate; a radiation source providing a radiation; a radiation polarizer adapted to polarize the radiation to one or more polarization angles selected to the orientation of a feature processed on the substrate; a radiation detector detecting the radiation reflected from the substrate during processing to generate signals; and a band pass filter for filtering the signal to selectively pass the signal component generated from the radiation reflected by the feature. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：监测处理基板过程中产生的小变化。解决方案：本发明的基板的处理装置具有：处理基板的室; 提供辐射的辐射源; 辐射偏振器，其适于将辐射偏振到针对在衬底上处理的特征的取向选择的一个或多个偏振角; 辐射检测器，在处理过程中检测从衬底反射的辐射，以产生信号; 以及带通滤波器，用于对信号进行滤波以选择性地传递由由特征反射的辐射产生的信号分量。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2011135097A Correction of wafer temperature drift in plasma reactor based on continuous wafer temperature measurement using in-situ wafer temperature optical probe 审中-公开
标题翻译：基于连续波温度测量的等离子体反应器中的波浪温度变化的校正使用现场波长温度光学探头
公开(公告)号：JP2011135097A
公开(公告)日：2011-07-07
申请号：JP2011062087
申请日：2011-03-22
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： NOORBAKHSH HAMID , WELCH MIKE , LUSCHER PAUL E , SALIMIAN SIAMAK , BRAD MEISU
IPC分类号： H01L21/302 , H01L21/3065 , C30B25/16 , C30B31/18 , H01L21/00
CPC分类号： H01L21/67248 , C30B25/16 , C30B31/18
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for precision-controlling plasma treatment of a semiconductor wafer.
SOLUTION: The invention solves the problem of continuously monitoring wafer temperature during processing by using an optical temperature sensor or a fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. The optical fiber is accommodated without disturbing plasma processing by providing, in one of wafer lift pins, an axial void through which the optical fiber passes. The end of the fiber facing the backside of the wafer is coincident with the end of the hollow lift pin. The other end is coupled via an "external" optical fiber to a temperature probe electronic device external to a reactor chamber.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于精确控制半导体晶片等离子体处理的方法和装置。解决方案：本发明解决了通过使用光学温度传感器或氟光温度传感器在处理期间连续监测晶片温度的问题，该光学温度传感器包括具有靠近并面向晶片背面的端部的光纤。通过在晶片升降销之一中提供光纤通过的轴向空隙，容纳光纤而不干扰等离子体处理。面向晶片背面的光纤的端部与中空提升销的端部重合。另一端通过“外部”光纤耦合到反应室外部的温度探针电子设备。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2007294987A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2007294987A
公开(公告)日：2007-11-08
申请号：JP2007159821
申请日：2007-06-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To monitor small changes made under substrate processing. SOLUTION: The substrate processing apparatus of this invention comprises: a process chamber having a substrate support, an entrance of gas stream, a gas activation device, a gas exhaust device and wall that has a recess portion with a window; and a process monitoring system that adjoins the window of the recess portion of the wall. The foregoing process monitor system monitors a process performed in the process chamber by detecting radiation that passes through the window. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明申请

WO0145135A9 PLASMA REACTOR COOLED CEILING WITH AN ARRAY OF THERMALLY ISOLATED PLASMA HEATED MINI-GAS DISTRIBUTION PLATES 审中-公开
标题翻译：具有热隔离等离子体加热的微型气体分配板的等离子体反应器冷却的天花板
公开(公告)号：WO0145135A9
公开(公告)日：2002-08-15
申请号：PCT/US0042751
申请日：2000-12-11
申请人： APPLIED MATERIALS INC
发明人： NOORBAKHSH HAMID , WELCH MICHAEL , SALIMIAN SAIMAK , LUSCHER PAUL , SHAN HONGCHING , VAIDYA KAUSHIK , CARDUCCI JIM , LEE EVANS
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32522 , H01J37/321 , H01J37/3244
摘要： A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate (220) for introducing a process gas into the reactor is supported on the chamber enclosure member (210) and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.
摘要翻译：体现本发明的等离子体反应器包括晶片支撑件和室外壳构件，其具有大致面向晶片支撑件的内表面。用于将工艺气体引入反应器的至少一个微型气体分配板（220）被支撑在室外壳构件（210）上，并且具有出口表面，其是所述晶片支撑件的内表面的一部分的一部分。冷却剂系统将室外壳构件保持在低温，并且微型气体分配板与腔室外壳构件至少部分热绝缘，使得其通过等离子体加热保持在较高温度。

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