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1. 发明申请

WO2007021520A2 METHODS AND SYSTEMS FOR INCREASING SUBSTRATE TEMPERATURE IN PLASMA REACTORS 审中-公开
标题翻译：在等离子体反应器中增加基板温度的方法和系统
公开(公告)号：WO2007021520A2
公开(公告)日：2007-02-22
申请号：PCT/US2006029753
申请日：2006-07-28
申请人： APPLIED MATERIALS INC , LI SHIJIAN , LU SIQING , CHOU IRENE , LEE YOUNG S , ISHIKAWA TETSUYA
发明人： LI SHIJIAN , LU SIQING , CHOU IRENE , LEE YOUNG S , ISHIKAWA TETSUYA
IPC分类号： H01J37/32 , C23C14/50 , C23C16/458 , H01L21/02 , H01L21/683
CPC分类号： C23C16/4581 , C23C16/505 , H01J37/321 , H01J37/32706 , H01J2237/2001 , H01J2237/3321 , H01L21/67069 , H01L21/67248 , H01L21/68742 , H01L21/6875 , H01L21/68757
摘要： A substrate processing system is provided. A housing defines a processing chamber. A plasma-generating system is operatively coupled to the processing chamber. A substrate support member is disposed within the processing chamber and configured to hold a substrate during substrate processing. A ceramic insert is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.
摘要翻译：提供了基板处理系统。壳体限定处理室。等离子体产生系统可操作地耦合到处理室。衬底支撑构件设置在处理室内并且构造成在衬底处理期间保持衬底。陶瓷插入件设置在衬底支撑构件上方，使得陶瓷插入件在衬底处理期间设置在衬底支撑构件和衬底之间。气体输送系统构造成将气体引入处理室。控制器控制等离子体产生系统和气体输送系统。

2. 发明申请

WO2007021521A3 TWO-PIECE DOME WITH SEPARATE RF COILS FOR INDUCTIVELY COUPLED PLASMA REACTORS 审中-公开
标题翻译：用于电感耦合等离子体反应器的独立射频线圈的两面圆顶
公开(公告)号：WO2007021521A3
公开(公告)日：2007-05-03
申请号：PCT/US2006029763
申请日：2006-07-28
申请人： APPLIED MATERIALS INC , LU SIQING , LIANG QIWEI , LAI CANFENG , CHEN ROBERT T , BLOKING JASON T , CHOU IRENE , KIM STEVEN H , LEE YOUNG S , YIEH ELLIE Y
发明人： LU SIQING , LIANG QIWEI , LAI CANFENG , CHEN ROBERT T , BLOKING JASON T , CHOU IRENE , KIM STEVEN H , LEE YOUNG S , YIEH ELLIE Y
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/321 , H01J37/32431 , H01J37/32458
摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall (412) and a dome (432, 436) positioned above the sidewall. The dome has physically separated and noncontiguous pieces (432, 43S). The gas-delivery system introduces e a gas into the process chamber through side nozzles (414, 416) positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system (420, 424) is operatively coupled with the process chamber. The substrate holder (408) is disposed within the process chamber and supports a substrate (404) during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.
摘要翻译：衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。壳体包括位于侧壁上方的侧壁（412）和圆顶（432,436）。圆顶具有物理分离和不连续的部件（432,43S）。气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴（414,416）将气体引入处理室。高密度等离子体产生系统（420,424）与处理室可操作地耦合。衬底保持器（408）设置在处理室内并在衬底处理期间支撑衬底（404）。控制器控制气体输送系统和高密度等离子体发生系统。

3. 发明申请

WO2010045021A3 GAPFILL IMPROVEMENT WITH LOW ETCH RATE DIELECTRIC LINERS 审中-公开
标题翻译：采用低蚀刻速率介电衬底改进GAPFILL
公开(公告)号：WO2010045021A3
公开(公告)日：2010-07-01
申请号：PCT/US2009058832
申请日：2009-09-29
申请人： APPLIED MATERIALS INC , KWON YOUNG SOO , JANG BI , WANG ANCHUAN , LEE YOUNG S , BALSEANU MIHAELA , XIA LI-QUN , JEON JIN HO
发明人： KWON YOUNG SOO , JANG BI , WANG ANCHUAN , LEE YOUNG S , BALSEANU MIHAELA , XIA LI-QUN , JEON JIN HO
IPC分类号： H01L21/762
CPC分类号： H01L21/76224 , H01L21/02112 , H01L21/02247 , H01L21/02304 , H01L21/318
摘要： A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.
摘要翻译：描述了填充沟槽的方法，并且包括在含氟蚀刻化学物中沉积具有高氧化硅比介电衬里蚀刻速率的电介质衬里。氧化硅被沉积在沟槽内并被蚀刻以重新打开或拓宽沟槽顶部附近的间隙。电介质衬里在蚀刻过程中保护下面的衬底，因此可以使间隙更宽。氧化硅再次沉积在沟槽内以基本上填充沟槽。

4. 发明申请

WO2009085974A3 LOW WET ETCH RATE SILICON NITRIDE FILM 审中-公开
标题翻译：低湿蚀刻速率硅氮化膜
公开(公告)号：WO2009085974A3
公开(公告)日：2009-09-24
申请号：PCT/US2008087465
申请日：2008-12-18
申请人： APPLIED MATERIALS INC , MUNGEKAR HEMANT P , WU JING , LEE YOUNG S , WANG ANCHUAN
发明人： MUNGEKAR HEMANT P , WU JING , LEE YOUNG S
IPC分类号： C23C16/24 , C23C16/34 , C23C16/513 , H01L21/205
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/31111
摘要： The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600°C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.
摘要翻译：本发明涉及在低于600℃的衬底温度下使用高密度等离子体化学气相沉积技术在衬底上沉积低湿蚀刻速率氮化硅膜的方法。该方法另外涉及保持等离子体中氮与硅的相对较高的比率以及较低的处理压力。

5. 发明申请

WO2012102809A3 POLYSILICON FILMS BY HDP-CVD 审中-公开
标题翻译：聚硅氧烷膜通过HDP-CVD
公开(公告)号：WO2012102809A3
公开(公告)日：2012-10-04
申请号：PCT/US2011066601
申请日：2011-12-21
申请人： APPLIED MATERIALS INC , WANG ANCHUAN , CHEN XIAOLIN , LEE YOUNG S
发明人： WANG ANCHUAN , CHEN XIAOLIN , LEE YOUNG S
IPC分类号： H01L21/205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

6. 发明申请

WO2008027845A3 DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：掺杂半导体衬底中的掺杂剂活化
公开(公告)号：WO2008027845A3
公开(公告)日：2008-06-19
申请号：PCT/US2007076910
申请日：2007-08-27
申请人： APPLIED MATERIALS INC , MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
发明人： MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/268 , C23C16/26 , C23C16/505 , C23C16/56 , H01L21/26513
摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500°c. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.
摘要翻译：公开了用于激活掺杂半导体衬底中的掺杂剂的方法。碳前体流入设置有掺杂半导体衬底的衬底处理室中。在衬底处理室中由碳前体形成等离子体。用等离子体在衬底上沉积碳膜。在沉积小于500℃的碳膜时保持衬底的温度。沉积的碳膜暴露于电磁辐射下的时间小于10ms，并且在电磁辐射所包含的波长处具有大于0.3的消光系数。

7. 发明申请

WO2013052712A3 SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION 审中-公开
标题翻译：用可变氢终止方式选择性蚀刻硅
公开(公告)号：WO2013052712A3
公开(公告)日：2013-06-20
申请号：PCT/US2012058818
申请日：2012-10-04
申请人： APPLIED MATERIALS INC , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
发明人： WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01L21/3081 , H01L21/32137
摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.
摘要翻译：描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。来自远程等离子体的等离子体流出物流入衬底处理区域，在衬底处理区域中，等离子体流出物与硅的暴露区域反应。等离子体流出物与图案化的异质结构反应以选择性地去除硅，同时非常缓慢地去除其他暴露的材料。硅选择性的结果部分来自远程等离子体中含氢前体的优势，其中氢终止于图案化的异质结构上的表面。含氟前体的流量低得多，以逐渐将氟取代为氢封端的硅上的氢，从而从硅的暴露区域选择性地除去硅。这些方法可用于选择性地去除硅，其速度比氧化硅，氮化硅和各种含金属材料快得多。

8. 发明申请

WO2013033527A3 SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN 审中-公开
标题翻译：选择性抑制含有硅和氮的材料的干燥速率
公开(公告)号：WO2013033527A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053329
申请日：2012-08-31
申请人： APPLIED MATERIALS INC , WANG YUNYU , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
发明人： WANG YUNYU , WANG ANCHUAN , ZHANG JINGCHUN , INGLE NITIN K , LEE YOUNG S
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32357 , H01J37/32449 , H01L21/32137
摘要： A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H2). The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor.
摘要翻译：描述了抑制图案化异质结构上暴露的含硅和氮的材料的蚀刻速率的方法，并且包括两级远程等离子体蚀刻。使用该方法，硅相对于氮化硅和其它含硅和氮的材料的蚀刻选择性增加。远程等离子体蚀刻的第一阶段使等离子体流出物与图案化的异质结构反应，以在含硅和氮的材料上形成保护性固体副产物。第一级的等离子体流出物由包括三氟化氮和氢气（H 2）在内的前体组合的远程等离子体形成。远程等离子体蚀刻的第二阶段还使等离子体流出物与图案化的异质结构反应，以选择性地除去缺乏保护性固体副产物的材料。第二级的等离子体流出物由含氟前体的远程等离子体形成。

9. 发明申请

WO2010047953A3 A REMOTE PLASMA CLEAN PROCESS WITH CYCLED HIGH AND LOW PRESSURE CLEAN STEPS 审中-公开
标题翻译：具有循环高低压清洁步骤的远程等离子清洁工艺
公开(公告)号：WO2010047953A3
公开(公告)日：2010-06-17
申请号：PCT/US2009059878
申请日：2009-10-07
申请人： APPLIED MATERIALS INC , HUA ZHONG QIANG , KAMATH SANJAY , LEE YOUNG S , YIEH ELLIE Y , LE HIEN-MINH HUU , PATEL ANJANA M , GONDHALEKAR SUDHIR R
发明人： HUA ZHONG QIANG , KAMATH SANJAY , LEE YOUNG S , YIEH ELLIE Y , LE HIEN-MINH HUU , PATEL ANJANA M , GONDHALEKAR SUDHIR R
IPC分类号： H01L21/3065 , H01L21/205 , H01L21/302
CPC分类号： B08B7/0035 , C23C16/4405
摘要： A remote plasma process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber. In one embodiment, the substrate is transferred out of the substrate processing chamber and a flow of a fluorine-containing etchant gas is introduced into a remote plasma source where reactive species are formed. A continuous flow of the reactive species from the remote plasmas source to the substrate processing chamber is generated while a cycle of high and low pressure clean steps is repeated. During the high pressure clean step, reactive species are flown into the substrate processing chamber while pressure within the substrate processing chamber is maintained between 4-15 Torr. During the low pressure clean step, reactive species are flown into the substrate processing chamber while reducing the pressure of the substrate processing chamber by at least 50 percent of a high pressure reached in the high pressure clean step.
摘要翻译：一种远程等离子体处理，用于在处理设置在基板处理室中的基板之后从基板处理室的一个或多个内表面去除不想要的沉积物。在一个实施例中，将基板转移出基板处理室，并且将含氟蚀刻剂气体的流引入到其中形成反应性物质的远程等离子体源中。产生从远程等离子体源到基板处理室的反应物质的连续流动，同时重复高低压清洁步骤的循环。在高压清洁步骤期间，反应性物质流入基板处理室，同时基板处理室内的压力保持在4-15Torr之间。在低压清洁步骤期间，反应性物质流入基板处理室，同时将基板处理室的压力降低至高压清洁步骤达到的至少50％的高压。

10. 发明申请

WO2012177789A3 INTEGRATED PROCESS MODULATION FOR PSG GAPFILL 审中-公开
标题翻译： PSG GAPFILL的集成过程调制
公开(公告)号：WO2012177789A3
公开(公告)日：2013-03-14
申请号：PCT/US2012043384
申请日：2012-06-20
申请人： APPLIED MATERIALS INC , LEE YOUNG S , WANG ANCHUAN , CHAN LAN CHIA , VENKATARAMAN SHANKAR
发明人： LEE YOUNG S , WANG ANCHUAN , CHAN LAN CHIA , VENKATARAMAN SHANKAR
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02129 , H01L21/02274 , H01L21/0234 , H01L21/76224
摘要： A method of depositing a phosphosilicate glass (PSG) film on a substrate disposed in a substrate processing chamber includes depositing a first portion of the PSG film over the substrate using a high-density plasma process. Thereafter, a portion of the first portion of the PSG film may be etched back. The etch back process may include flowing a halogen precursor to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the etch back. The method also includes flowing a halogen scavenger to the substrate processing chamber to react with residual halogen in the substrate processing chamber, and exposing the first portion of the PSG film to a phosphorus-containing gas to provide a substantially uniform phosphorus concentration throughout the first portion of the PSG film.
摘要翻译：在设置在衬底处理室中的衬底上沉积磷硅玻璃（PSG）膜的方法包括使用高密度等离子体工艺在衬底上沉积第一部分PSG膜。此后，PSG膜的第一部分的一部分可被回蚀刻。回蚀工艺可以包括将卤素前体流动到衬底处理室，从卤素前体形成高密度等离子体，并且在回蚀刻之后使卤素前体终止流动。该方法还包括使卤素清除剂流到衬底处理室以与衬底处理室中的残留卤素反应，并将PSG膜的第一部分暴露于含磷气体，以在整个第一部分中提供基本均匀的磷浓度的PSG电影。

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