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1. 发明申请

WO2012003341A2 METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS 审中-公开
标题翻译：形成含钨层的方法
公开(公告)号：WO2012003341A2
公开(公告)日：2012-01-05
申请号：PCT/US2011042625
申请日：2011-06-30
申请人： APPLIED MATERIALS INC , KHANDELWAL AMIT , WU KAI , RENUART EMILY , CHEN JINQIU , GELATOS AVGERINOS V
发明人： KHANDELWAL AMIT , WU KAI , RENUART EMILY , CHEN JINQIU , GELATOS AVGERINOS V
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525
摘要： Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas.
摘要翻译：本文提供了在基片上形成含钨层的方法。在一些实施例中，在设置在处理室中的衬底上形成含钨层的方法可以包括混合氢气和氢化物以形成第一工艺气体; 将第一工艺气体引入处理室; 将处理室中的衬底暴露于第一工艺气体第一时间段以形成经调理的衬底表面; 随后清洗第一工艺气体的处理室; 将衬底暴露于包含钨前体的第二工艺气体持续第二时间段以在经调理的衬底表面上方形成含钨成核层; 随后清洗第二工艺气体的处理室。

2. 发明申请

WO2012003177A3 METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY 审中-公开
标题翻译：用于具有可变温度能力的热基材料处理的方法和设备
公开(公告)号：WO2012003177A3
公开(公告)日：2012-03-29
申请号：PCT/US2011042125
申请日：2011-06-28
申请人： APPLIED MATERIALS INC , TZU GWO-CHUAN , YUAN XIAOXIONG , KHANDELWAL AMIT , WANG BENJAMIN CHENG , GELATOS AVGERINOS V , WU KAI , KARAZIM MICHAEL P , LIN JING , CUVALCI OLKAN
发明人： TZU GWO-CHUAN , YUAN XIAOXIONG , KHANDELWAL AMIT , WANG BENJAMIN CHENG , GELATOS AVGERINOS V , WU KAI , KARAZIM MICHAEL P , LIN JING , CUVALCI OLKAN
IPC分类号： H01L21/205
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕主体设置的内环; 围绕所述内环设置的外环，在所述内环之间形成第一开口; 设置在第一开口上方的第一密封环; 设置在所述内环上方的阴影环，所述阴影环从所述外环向内延伸并且在所述阴影环和所述外环之间形成第二开口; 设置在第二开口上方的第二密封环; 至少部分地由主体和内部，外部，第一，第二和阴影环限定的空间; 在存在的衬底的处理表面和阴影环之间限定的第一间隙; 以及流体连接到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在衬底时，提供给所述空间的气体通过所述第一间隙流出所述空间。

3. 发明申请

WO2010077847A3 METHOD OF DEPOSITING TUNGSTEN FILM WITH REDUCED RESISTIVITY AND IMPROVED SURFACE MORPHOLOGY 审中-公开
标题翻译：沉积钨膜的电阻率降低和表面形貌改善的方法
公开(公告)号：WO2010077847A3
公开(公告)日：2010-09-23
申请号：PCT/US2009067997
申请日：2009-12-15
申请人： APPLIED MATERIALS INC , WU KAI , KHANDELWAL AMIT , GELATOS AVGERINOS V
发明人： WU KAI , KHANDELWAL AMIT , GELATOS AVGERINOS V
IPC分类号： H01L21/205
CPC分类号： H01L21/76876 , C23C16/02 , C23C16/045 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/76861 , H01L21/76877
摘要： A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.
摘要翻译：提供了一种控制钨膜的电阻率和形态的方法，包括在第一沉积阶段期间在衬底上沉积体钨层的第一膜，其中通过（i）引入连续的还原气流和脉冲流的（ii）使所述还原气体流动而不使所述含钨化合物流入所述室中以净化所述室，并且重复步骤（i）至（ii）中的步骤），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流来沉积体钨层的第二膜将化合物加入到处理室中直至沉积第二期望厚度。

4. 发明申请

WO2009134925A2 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN COPPER CONTACT APPLICATIONS 审中-公开
标题翻译：在铜接触应用中形成钴和钴硅材料的方法
公开(公告)号：WO2009134925A2
公开(公告)日：2009-11-05
申请号：PCT/US2009042165
申请日：2009-04-29
申请人： APPLIED MATERIALS INC , YU SANG-HO , MORAES KEVIN , GANGULI SESHADRI , CHUNG HUA , PHAN SEE-ENG , KHANDELWAL AMIT , WU KAI
发明人： YU SANG-HO , MORAES KEVIN , GANGULI SESHADRI , CHUNG HUA , PHAN SEE-ENG , KHANDELWAL AMIT , WU KAI
IPC分类号： H01L21/205 , H01L21/336
CPC分类号： H01L21/68792 , C23C16/06 , C23C16/42 , H01L21/02063 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L29/665
摘要： Embodiments of the invention provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, and depositing a copper material on or over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited on the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.
摘要翻译：本发明的实施例提供了通过使用各种沉积工艺和退火工艺形成钴硅化物层和金属钴层的方法。在一个实施例中，提供了一种在衬底上形成钴硅化物材料的方法，其包括用至少一种预清洗工艺处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积在钴硅化物材料上或上方的铜材料。在另一个实施例中，在沉积铜材料之前，金属钴材料可沉积在硅化钴材料上。在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

5. 发明专利

JP2009024252A Atomic layer deposition process for tungsten material 审中-公开
标题翻译：原子层沉积过程的金属材料
公开(公告)号：JP2009024252A
公开(公告)日：2009-02-05
申请号：JP2008128784
申请日：2008-05-15
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KHANDELWAL AMIT , MOORTHY MADHU , GELATOS AVGERINOS V , WU KAI
IPC分类号： C23C16/08 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide an improved process where, using an ALD process, a tungsten-containing material having satisfactory uniformity, hardly having contamination or having no contamination at all, and also having high electrical conductivity, i.e., low resistivity. SOLUTION: In one embodiment, the method for forming a tungsten-containing material on a substrate comprises: a step for positioning a substrate inside a process chamber, where the substrate comprises a base layer arranged thereon; and a step for successively exposing the substrate to a tungsten precursor and a reduction gas, so as to deposit a tungsten nucleation layer on the base layer upon an ALD process, where the reduction gas has a hydrogen/hydride flow ratio satisfying about 40:1, 100:1, 500:1, 800:1, 1,000:1 or more; and a step for depositing a tungsten bulk layer on the tungsten nucleation layer. The reduction gas comprises a hydride compound such as diborane, silane or a disilane. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的方法，其中使用ALD工艺，具有令人满意的均匀性，几乎没有污染或完全没有污染的含钨材料，并且还具有高导电性，即低电阻率。解决方案：在一个实施例中，用于在衬底上形成含钨材料的方法包括：将衬底定位在处理室内的步骤，其中衬底包括布置在其上的基底层; 以及将基板依次暴露于钨前体和还原气体的步骤，以在ALD工艺中在基底层上沉积钨成核层，其中还原气体的氢/氢气流量比满足约40:1 ，100：1,500：1,800：1，1,000：1或更高; 以及在钨成核层上沉积钨体层的步骤。还原气体包括氢化物化合物，例如乙硼烷，硅烷或乙硅烷。版权所有（C）2009，JPO＆INPIT

6. 发明专利

SG11201607671YA METHODS FOR FORMING METAL ORGANIC TUNGSTEN FOR MIDDLE OF THE LINE (MOL) APPLICATIONS 未知
公开(公告)号：SG11201607671YA
公开(公告)日：2016-10-28
申请号：SG11201607671Y
申请日：2015-03-13
申请人： APPLIED MATERIALS INC
发明人： WU LIQI , YU SANG HO , DAITO KAZUYA , PARK KIE JIN , WU KAI , THOMPSON DAVID
IPC分类号： H01L21/28
摘要： Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

7. 发明专利

IL126679A TYPE C LECTINS 未知
公开(公告)号：IL126679A
公开(公告)日：2006-12-31
申请号：IL12667998
申请日：1998-10-20
申请人： GENENTECH INC , LASKY LAURENCE A , WU KAI
发明人： LASKY LAURENCE A , WU KAI
IPC分类号： C12N15/09 , C07K14/705 , C07K16/28 , C07K19/00 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N15/12 , C12P21/02

8. 发明申请

WO0020601A3 POLYKETIDE SYNTHASE ENZYMES AND RECOMBINANT DNA CONSTRUCTS THEREFOR 审中-公开
公开(公告)号：WO0020601A3
公开(公告)日：2000-10-26
申请号：PCT/US9922886
申请日：1999-10-01
申请人： KOSAN BIOSCIENCES INC , REEVES CHRISTOPHER , CHU DANIEL , KHOSLA CHAITAN , SANTI DANIEL , WU KAI
发明人： REEVES CHRISTOPHER , CHU DANIEL , KHOSLA CHAITAN , SANTI DANIEL , WU KAI
IPC分类号： C12N15/09 , A61K31/436 , A61P25/00 , A61P37/06 , C07D498/18 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N9/00 , C12N9/10 , C12N9/12 , C12N15/52 , C12P17/18 , C12P19/32 , C12P19/62 , C12N15/54 , C12N15/62
CPC分类号： C07D498/18 , C07K2319/00 , C12N9/1029 , C12N9/1205 , C12N15/52 , C12P17/188 , C12P19/32
摘要： Host cells comprising recombinant vectors encoding the FK-520 polyketide synthase and FK-520 modification enzymes can be used to produce the FK-520 polyketide. Recombinant DNA constructs comprising one or more FK-520 polyketide synthase domains, modules, open reading frames, and variants thereof can be used to produce recombinant polyketide synthases and a variety of different polyketides with application as pharmaceutical and veterinary products.

9. 发明申请

WO0020601A9 POLYKETIDE SYNTHASE ENZYMES AND RECOMBINANT DNA CONSTRUCTS THEREFOR 审中-公开
标题翻译： POLYKTIDE SYNTHASE酶及其重组DNA构建体
公开(公告)号：WO0020601A9
公开(公告)日：2000-08-31
申请号：PCT/US9922886
申请日：1999-10-01
申请人： KOSAN BIOSCIENCES INC , REEVES CHRISTOPHER , CHU DANIEL , KHOSLA CHAITAN , SANTI DANIEL , WU KAI
发明人： REEVES CHRISTOPHER , CHU DANIEL , KHOSLA CHAITAN , SANTI DANIEL , WU KAI
IPC分类号： C12N15/09 , A61K31/436 , A61P25/00 , A61P37/06 , C07D498/18 , C12N1/15 , C12N1/19 , C12N1/21 , C12N5/10 , C12N9/00 , C12N9/10 , C12N9/12 , C12N15/52 , C12P17/18 , C12P19/32 , C12P19/62 , C12N15/54 , C12N15/62
CPC分类号： C07D498/18 , C07K2319/00 , C12N9/1029 , C12N9/1205 , C12N15/52 , C12P17/188 , C12P19/32
摘要： Host cells comprising recombinant vectors encoding the FK-520 polyketide synthase and FK-520 modification enzymes can be used to produce the FK-520 polyketide. Recombinant DNA constructs comprising one or more FK-520 polyketide synthase domains, modules, open reading frames, and variants thereof can be used to produce recombinant polyketide synthases and a variety of different polyketides with application as pharmaceutical and veterinary products.
摘要翻译：包含编码FK-520聚酮化合物合酶和FK-520修饰酶的重组载体的宿主细胞可用于生产FK-520聚酮化合物。包含一个或多个FK-520聚酮化合物合酶结构域，模块，开放阅读框及其变体的重组DNA构建体可用于生产重组聚酮化合物合酶和各种不同的聚酮化合物作为药物和兽药产品。

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