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1. 发明申请

WO2012003341A2 METHODS FOR FORMING TUNGSTEN-CONTAINING LAYERS 审中-公开
标题翻译：形成含钨层的方法
公开(公告)号：WO2012003341A2
公开(公告)日：2012-01-05
申请号：PCT/US2011042625
申请日：2011-06-30
申请人： APPLIED MATERIALS INC , KHANDELWAL AMIT , WU KAI , RENUART EMILY , CHEN JINQIU , GELATOS AVGERINOS V
发明人： KHANDELWAL AMIT , WU KAI , RENUART EMILY , CHEN JINQIU , GELATOS AVGERINOS V
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/06 , C23C16/45525
摘要： Methods for forming tungsten-containing layers on substrates are provided herein. In some embodiments, a method for forming a tungsten-containing layer on a substrate disposed in a process chamber may include mixing hydrogen and a hydride to form a first process gas; introducing the first process gas to the process chamber; exposing the substrate in the process chamber to the first process gas for a first period of time to form a conditioned substrate surface; subsequently purging the process chamber of the first process gas; exposing the substrate to a second process gas comprising a tungsten precursor for a second period of time to form a tungsten-containing nucleation layer atop the conditioned substrate surface; and subsequently purging the process chamber of the second process gas.
摘要翻译：本文提供了在基片上形成含钨层的方法。在一些实施例中，在设置在处理室中的衬底上形成含钨层的方法可以包括混合氢气和氢化物以形成第一工艺气体; 将第一工艺气体引入处理室; 将处理室中的衬底暴露于第一工艺气体第一时间段以形成经调理的衬底表面; 随后清洗第一工艺气体的处理室; 将衬底暴露于包含钨前体的第二工艺气体持续第二时间段以在经调理的衬底表面上方形成含钨成核层; 随后清洗第二工艺气体的处理室。

2. 发明申请

WO2012003177A3 METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY 审中-公开
标题翻译：用于具有可变温度能力的热基材料处理的方法和设备
公开(公告)号：WO2012003177A3
公开(公告)日：2012-03-29
申请号：PCT/US2011042125
申请日：2011-06-28
申请人： APPLIED MATERIALS INC , TZU GWO-CHUAN , YUAN XIAOXIONG , KHANDELWAL AMIT , WANG BENJAMIN CHENG , GELATOS AVGERINOS V , WU KAI , KARAZIM MICHAEL P , LIN JING , CUVALCI OLKAN
发明人： TZU GWO-CHUAN , YUAN XIAOXIONG , KHANDELWAL AMIT , WANG BENJAMIN CHENG , GELATOS AVGERINOS V , WU KAI , KARAZIM MICHAEL P , LIN JING , CUVALCI OLKAN
IPC分类号： H01L21/205
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕主体设置的内环; 围绕所述内环设置的外环，在所述内环之间形成第一开口; 设置在第一开口上方的第一密封环; 设置在所述内环上方的阴影环，所述阴影环从所述外环向内延伸并且在所述阴影环和所述外环之间形成第二开口; 设置在第二开口上方的第二密封环; 至少部分地由主体和内部，外部，第一，第二和阴影环限定的空间; 在存在的衬底的处理表面和阴影环之间限定的第一间隙; 以及流体连接到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在衬底时，提供给所述空间的气体通过所述第一间隙流出所述空间。

3. 发明申请

WO2010077847A3 METHOD OF DEPOSITING TUNGSTEN FILM WITH REDUCED RESISTIVITY AND IMPROVED SURFACE MORPHOLOGY 审中-公开
标题翻译：沉积钨膜的电阻率降低和表面形貌改善的方法
公开(公告)号：WO2010077847A3
公开(公告)日：2010-09-23
申请号：PCT/US2009067997
申请日：2009-12-15
申请人： APPLIED MATERIALS INC , WU KAI , KHANDELWAL AMIT , GELATOS AVGERINOS V
发明人： WU KAI , KHANDELWAL AMIT , GELATOS AVGERINOS V
IPC分类号： H01L21/205
CPC分类号： H01L21/76876 , C23C16/02 , C23C16/045 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/76861 , H01L21/76877
摘要： A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.
摘要翻译：提供了一种控制钨膜的电阻率和形态的方法，包括在第一沉积阶段期间在衬底上沉积体钨层的第一膜，其中通过（i）引入连续的还原气流和脉冲流的（ii）使所述还原气体流动而不使所述含钨化合物流入所述室中以净化所述室，并且重复步骤（i）至（ii）中的步骤），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流来沉积体钨层的第二膜将化合物加入到处理室中直至沉积第二期望厚度。

4. 发明申请

WO2006078779A3 METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES 审中-公开
标题翻译：沉积原子层沉积技术的沉积层的方法
公开(公告)号：WO2006078779A3
公开(公告)日：2009-04-23
申请号：PCT/US2006001838
申请日：2006-01-19
申请人： APPLIED MATERIALS INC , LAI KEN KAUNG , RAJAGOPALAN RAVI , KHANDELWAL AMIT , MOORTHY MADHU , GANDIKOTA SRINIVAS , CASTRO JOSEPH , GELATOS AVGERINOS V , KNEPFLER CHERYL , JIAN PING , FANG HONGBIN , HUANG CHAO-MING , XI MING , YANG MICHAEL X , CHUNG HUA , BYUN JEONG SOO
发明人： LAI KEN KAUNG , RAJAGOPALAN RAVI , KHANDELWAL AMIT , MOORTHY MADHU , GANDIKOTA SRINIVAS , CASTRO JOSEPH , GELATOS AVGERINOS V , KNEPFLER CHERYL , JIAN PING , FANG HONGBIN , HUANG CHAO-MING , XI MING , YANG MICHAEL X , CHUNG HUA , BYUN JEONG SOO
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer within a process chamber, exposing the substrate to a first soak process (220) for a first tune period and depositing a nucleation layer (230) on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the substrate to a second soak process (240) for a second time period and depositing a bulk layer (250) on the nucleation layer In one example, the barrier layer contains titanium nitride and the first and second soak processes contain at least one reducing gas. The nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process and the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含阻挡层的衬底定位在处理室内，将衬底暴露于第一调谐周期的第一浸泡工艺（220）和沉积通过使含钨前体和还原剂流入处理室中的阻挡层上的成核层（230）。该方法还包括将基板暴露于第二时间段的第二浸泡工艺（240）并在成核层上沉积体层（250）。在一个示例中，阻挡层包含氮化钛，并且第一和第二浸泡工艺包含至少一种还原气体。可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积成核层，并且通过化学气相沉积工艺或物理气相沉积工艺沉积本体层。

5. 发明申请

WO2013148490A4 METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 审中-公开
标题翻译：使无缝隙缝隙填充的方法
公开(公告)号：WO2013148490A4
公开(公告)日：2013-11-21
申请号：PCT/US2013033437
申请日：2013-03-22
申请人： APPLIED MATERIALS INC , ZOPE BHUSHAN N , GELATOS AVGERINOS V , ZHENG BO , LEI YU , FU XINYU , GANDIKOTA SRINIVAS , YU SANG-HO , ABRAHAM MATHEW
发明人： ZOPE BHUSHAN N , GELATOS AVGERINOS V , ZHENG BO , LEI YU , FU XINYU , GANDIKOTA SRINIVAS , YU SANG-HO , ABRAHAM MATHEW
IPC分类号： H01L21/28 , H01L21/205 , H01L21/31 , H01L21/8238
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了用于在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种用于沉积用于在半导体器件中形成接触结构的接触金属层的方法。该方法包括执行循环金属沉积工艺以在衬底上沉积接触金属层并对设置在衬底上的接触金属层进行退火。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以在衬底上沉积一部分接触金属层，将该部分接触金属层暴露于等离子体处理工艺，并且重复将衬底暴露于沉积前驱物气体混合物并将该部分接触金属层暴露于等离子体处理工艺直至达到预定厚度的接触金属层。

6. 发明专利

JP2009024252A Atomic layer deposition process for tungsten material 审中-公开
标题翻译：原子层沉积过程的金属材料
公开(公告)号：JP2009024252A
公开(公告)日：2009-02-05
申请号：JP2008128784
申请日：2008-05-15
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KHANDELWAL AMIT , MOORTHY MADHU , GELATOS AVGERINOS V , WU KAI
IPC分类号： C23C16/08 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/8242 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide an improved process where, using an ALD process, a tungsten-containing material having satisfactory uniformity, hardly having contamination or having no contamination at all, and also having high electrical conductivity, i.e., low resistivity. SOLUTION: In one embodiment, the method for forming a tungsten-containing material on a substrate comprises: a step for positioning a substrate inside a process chamber, where the substrate comprises a base layer arranged thereon; and a step for successively exposing the substrate to a tungsten precursor and a reduction gas, so as to deposit a tungsten nucleation layer on the base layer upon an ALD process, where the reduction gas has a hydrogen/hydride flow ratio satisfying about 40:1, 100:1, 500:1, 800:1, 1,000:1 or more; and a step for depositing a tungsten bulk layer on the tungsten nucleation layer. The reduction gas comprises a hydride compound such as diborane, silane or a disilane. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种改进的方法，其中使用ALD工艺，具有令人满意的均匀性，几乎没有污染或完全没有污染的含钨材料，并且还具有高导电性，即低电阻率。解决方案：在一个实施例中，用于在衬底上形成含钨材料的方法包括：将衬底定位在处理室内的步骤，其中衬底包括布置在其上的基底层; 以及将基板依次暴露于钨前体和还原气体的步骤，以在ALD工艺中在基底层上沉积钨成核层，其中还原气体的氢/氢气流量比满足约40:1 ，100：1,500：1,800：1，1,000：1或更高; 以及在钨成核层上沉积钨体层的步骤。还原气体包括氢化物化合物，例如乙硼烷，硅烷或乙硅烷。版权所有（C）2009，JPO＆INPIT

7. 发明专利

AU2003238853A1 Apparatus for cyclical deposition of thin films 未知
公开(公告)号：AU2003238853A1
公开(公告)日：2003-09-02
申请号：AU2003238853
申请日：2003-01-27
申请人： APPLIED MATERIALS INC
发明人： GELATOS AVGERINOS V , KHAN AHMAD A , THAKUR RANDHIR P S , UMOTOY SALVADOR P , XI MING , GLENN WALTER BENJAMIN , AL-SHAIKH AYAD A , MAK ALFRED W
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , H01L21/00

8. 发明申请

WO03065424A2 APPARATUS FOR CYCLICAL DEPOSITION OF THIN FILMS 审中-公开
标题翻译：用于薄膜循环沉积的装置
公开(公告)号：WO03065424A2
公开(公告)日：2003-08-07
申请号：PCT/US0302408
申请日：2003-01-27
申请人： APPLIED MATERIALS INC
发明人： THAKUR RANDHIR P S , MAK ALFRED W , XI MING , GLENN WALTER BENJAMIN , KHAN AHMAD A , AL-SHAIKH AYAD A , GELATOS AVGERINOS V , UMOTOY SALVADOR P
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量给所述室的反应区域的阀的操作同步的排气系统。

9. 发明公开

EP3216048A4 METHODS FOR THERMALLY FORMING A SELECTIVE COBALT LAYER 审中-公开
公开(公告)号：EP3216048A4
公开(公告)日：2018-07-25
申请号：EP15858000
申请日：2015-11-05
申请人： APPLIED MATERIALS INC
发明人： AI HUA , LU JIANG , GELATOS AVGERINOS V , MA PAUL F , YU SANG HO , LIU FENG Q , FU XINYU , YE WEIFENG
IPC分类号： H01L21/285 , C23C16/04 , C23C16/06 , H01L21/768 , H01L23/532
CPC分类号： H01L21/76879 , C23C16/04 , C23C16/06 , H01L21/02068 , H01L21/28562 , H01L21/3105 , H01L21/76814 , H01L21/76826 , H01L21/76834 , H01L21/76849 , H01L21/76883 , H01L23/53209 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

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