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1. 发明专利

JP2003059848A Multi-zone resistive heater 审中-公开
标题翻译：多层电阻加热器
公开(公告)号：JP2003059848A
公开(公告)日：2003-02-28
申请号：JP2002145234
申请日：2002-05-20
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッド
发明人： CHEN STEVEN AIHUA , HO HENRY , YANG MICHAEL X , PEUSE BRUCE W , LITTAU KARL , YUU CHAN
IPC分类号： H01L21/02 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/31 , H05B3/00 , H05B3/10
CPC分类号： H01L21/67103
摘要： PROBLEM TO BE SOLVED: To provide a heating apparatus. SOLUTION: The heater apparatus includes a stage comprises a surface having an area to support a wafer and a body, a shaft coupled to the stage and first and second heating elements. The first heating element is disposed within the first plane of the body of the stage. The second heating element is disposed within the second plane of the body of the stage, at a distance greater from the surface of the stage than the first heating element. A reactor comprises a chamber, a resistive heater, a first temperature sensor and a second temperature sensor. A resistive heating system for a CVD device comprises the resistive heater. In a method for controlling the temperature in the reactor, the resistive heater is installed in the chamber of the reactor, the temperature is measured by using at least two temperature sensors, power supplied to the first and second heating elements is adjusted, in accordance with the temperature measured by the first and second temperature sensors, so that the temperature in the reactor is controlled.
摘要翻译：要解决的问题：提供一种加热装置。解决方案：加热器装置包括一个台，其包括具有支撑晶片和主体的区域的表面，联接到该台的轴和第一和第二加热元件。第一加热元件设置在台的主体的第一平面内。第二加热元件设置在台的主体的第二平面内，距离台的表面比第一加热元件更远。反应器包括室，电阻加热器，第一温度传感器和第二温度传感器。用于CVD装置的电阻加热系统包括电阻加热器。在用于控制反应器中的温度的方法中，电阻加热器安装在反应器的腔室中，温度通过使用至少两个温度传感器来测量，调节供应到第一和第二加热元件的功率，根据由第一和第二温度传感器测量的温度，从而控制反应器中的温度。

2. 发明专利

JP2001274146A HEATER TEMPERATURE UNIFORMIZING APPARATUS 失效
公开(公告)号：JP2001274146A
公开(公告)日：2001-10-05
申请号：JP2001010594
申请日：2001-01-18
申请人： APPLIED MATERIALS INC
发明人： HO HENRY , RUBINCHIK ALEXANDER , CHEN AIHUA , CABREROS ABRIL , LI TIANXIAO STEVEN , YAM MARK , PEUSE BRUCE W
IPC分类号： C23C16/44 , C23C16/52 , H01L21/00 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To enhance film formation of a wafer using a heater by improving temperature uniformity. SOLUTION: An apparatus for a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft.

3. 发明专利

AU2003210542A1 EMISSIVITY-CHANGE-FREE PUMPING PLATE KIT IN A SINGLE WAFER CHAMBER 未知
公开(公告)号：AU2003210542A1
公开(公告)日：2003-07-30
申请号：AU2003210542
申请日：2003-01-15
申请人： APPLIED MATERIALS INC
发明人： JIN XIAOLIANG , WANG SHULIN , LUO LEE , HO HENRY , CHEN STEVEN A
IPC分类号： C23C16/455 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205
摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

4. 发明专利

AU2003294223A1 MULTI-ZONE RESITIVE HEATER 未知
公开(公告)号：AU2003294223A1
公开(公告)日：2004-04-23
申请号：AU2003294223
申请日：2003-09-19
申请人： APPLIED MATERIALS INC
发明人： HO HENRY , CUI ANQING , YUAN XIAOXIONG
IPC分类号： H01L21/00
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

5. 发明专利

AU2003294223A8 Multi-zone resitive heater 未知
公开(公告)号：AU2003294223A8
公开(公告)日：2004-04-23
申请号：AU2003294223
申请日：2003-09-19
申请人： APPLIED MATERIALS INC
发明人： YUAN XIAOXIONG , HO HENRY , CUI ANQING
IPC分类号： H01L21/00 , C23C16/458 , H05B3/28
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

6. 发明专利

DE60302214T2 未知
公开(公告)号：DE60302214T2
公开(公告)日：2006-07-27
申请号：DE60302214
申请日：2003-01-15
申请人： APPLIED MATERIALS INC
发明人： JIN XIAOLIANG , WANG SHULIN , LUO LEE , HO HENRY , CHEN A
IPC分类号： C23C16/455 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205
摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

7. 发明专利

DE60302214D1 未知
公开(公告)号：DE60302214D1
公开(公告)日：2005-12-15
申请号：DE60302214
申请日：2003-01-15
申请人： APPLIED MATERIALS INC
发明人： JIN XIAOLIANG , WANG SHULIN , LUO LEE , HO HENRY , CHEN A
IPC分类号： C23C16/455 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205
摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

8. 发明公开

EP1694885A4 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：具有多chemisms金属分离系统
公开(公告)号：EP1694885A4
公开(公告)日：2007-12-19
申请号：EP04760000
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , ELLWANGER RUSSELL C
发明人： YANG MICHAEL X , XI MING , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： C25D7/12 , B08B3/02 , C25D5/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

9. 发明申请

WO2004032187A3 MULTI-ZONE RESITIVE HEATER 审中-公开
标题翻译：多区耐热加热器
公开(公告)号：WO2004032187A3
公开(公告)日：2004-07-01
申请号：PCT/US0329689
申请日：2003-09-19
申请人： APPLIED MATERIALS INC
发明人： HO HENRY , CUI ANQING , YUAN XIAOXIONG
IPC分类号： H01L21/00 , C23C16/458 , H05B3/28
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.
摘要翻译：一种加热装置，包括一个台，该平台包括具有支撑晶片和主体的区域的表面，联接到该台的轴以及第一和第二加热元件。第一加热元件设置在台的主体的第一平面内。所述第二加热元件设置在所述台体的第二平面内，距离所述台的表面比所述第一加热元件更远的距离处，并且所述第二加热元件在与所述第一加热元件基本平行的平面中偏离所述第一加热元件第一平面和第二平面中的至少一个。

10. 发明申请

WO0104929A3 A METHOD OF FORMING A FILM IN A CHAMBER 审中-公开
标题翻译：一种形成室内薄膜的方法
公开(公告)号：WO0104929A3
公开(公告)日：2001-08-09
申请号：PCT/US0018829
申请日：2000-07-10
申请人： APPLIED MATERIALS INC
发明人： YANG MICHAEL X , HO HENRY , CHEN STEVEN A
IPC分类号： H01L21/00
CPC分类号： H01L21/67017
摘要： Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.
摘要翻译：在基板上形成膜的方法和装置，包括将预处理材料引入到足以形成膜作为处理室的内表面的一部分的处理室中，以阻止从该室的部分排气，将基板引入到并在衬底上形成膜。

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