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1. 发明公开

EP1694885A4 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：具有多chemisms金属分离系统
公开(公告)号：EP1694885A4
公开(公告)日：2007-12-19
申请号：EP04760000
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , ELLWANGER RUSSELL C
发明人： YANG MICHAEL X , XI MING , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： C25D7/12 , B08B3/02 , C25D5/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

2. 发明申请

WO2004094702A3 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A3
公开(公告)日：2006-11-30
申请号：PCT/US2004012012
申请日：2004-04-16
申请人： APPLIED MATERIALS INC , YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
发明人： YANG MICHAEL X , XI MING , ELLWANGER RUSSELL C , BRITCHER ERIC B , DONOSO BERNARDO , PANG LILY L , SHERMAN SVETLANA , HO HENRY , NGUYEN ANH N , LERNER ALEXANDER N , D AMBRA ALLEN L , SHANMUGASUNDRAM ARULKUMAR , ISHIKAWA TETSUYA , RABINOVICH YEVGENIY , LUBOMIRSKY DMITRY , MOK YEUK-FAI EDWIN , NGUYEN SON T
IPC分类号： C25D7/12 , B08B3/02 , C25D5/00 , C25D17/00 , C25D17/02 , C25D19/00 , C25D21/00 , C25D21/08 , H01L21/00 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主框架上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

3. 发明公开

KR20180018824A 조정 가능한 원격 해리 审中-公开
标题翻译：可调远程分离
公开(公告)号：KR20180018824A
公开(公告)日：2018-02-21
申请号：KR20187003372
申请日：2016-06-10
申请人： APPLIED MATERIALS INC
发明人： PARK SOONMAN , SCHATZ KENNETH D , JUNG SOONWOOK , LUBOMIRSKY DMITRY
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01J2237/334 , H01L21/3065 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/67069
摘要： 패터닝된기판의노출된부분을제2 노출된부분에대하여선택적으로에칭하는방법들이설명된다. 이에칭프로세스는불활성프리커서로부터원격플라즈마에형성된플라즈마유출물들과결합하기전에임의의플라즈마에서여기되지않은산화프리커서를사용하는가스상에칭이다. 플라즈마유출물들은플라즈마-프리원격챔버영역에서및/또는플라즈마-프리기판처리영역에서산화프리커서와결합될수 있다. 플라즈마유출물들의결합은산화프리커서를여기시키고패터닝된기판의노출된부분으로부터재료를제거한다. 에칭율은산화프리커서의유량또는여기되지않은/플라즈마여기된유량비율을조정함으로써제어가능하고선택가능하다.
摘要翻译：描述了相对于第二暴露部分选择性地蚀刻图案化衬底的暴露部分的方法。结合过程是使用未在任何等离子体中激发的氧化物前体的气体蚀刻，然后与来自惰性前体的远程等离子体中形成的等离子体流出物结合。等离子体流出物可以与无等离子体远程室区域中和/或无等离子体基板处理区域中的氧化前体结合。等离子体流出物的组合激发了氧化的前体并从图案化衬底的暴露部分去除了材料。通过调节氧化前体的流速或激发/等离子体激发流速的速率，可控制和选择蚀刻速率。

4. 发明公开

KR20180038412A 순환적 선택적 재료 제거 및 에칭을 위한 프로세스 챔버 审中-公开
公开(公告)号：KR20180038412A
公开(公告)日：2018-04-16
申请号：KR20177027489
申请日：2016-08-02
申请人： APPLIED MATERIALS INC
发明人： TRAN TOAN Q , PARK SOONAM , KIM JUNGHOON , LUBOMIRSKY DMITRY
IPC分类号： H01L21/02 , H01L21/205 , H01L21/683 , H05H1/46
CPC分类号： H01J37/32357 , H01J37/32082 , H01J37/32449 , H01J37/32834 , H01L21/311 , H01L21/67069 , H01L21/6831
摘要： 본명세서에서는기판에칭을위한방법및 장치가설명된다. 본명세서에서설명되는처리챔버는소스모듈, 프로세스모듈, 유동모듈, 및배기모듈을포함한다. RF 소스는챔버에결합될수 있고, 원격플라즈마는소스모듈내에서발생될수 있고, 직접플라즈마는프로세스모듈내에서발생될수 있다. 설명되는순환적에칭프로세스들은기판을에칭하기위해라디칼플라즈마와직접플라즈마를교대로사용할수 있다.

5. 发明公开

KR20200136495A 극도의 균일성의 가열식 기판 지지 조립체 审中-公开
公开(公告)号：KR20200136495A
公开(公告)日：2020-12-07
申请号：KR20207033946
申请日：2019-05-03
申请人： APPLIED MATERIALS INC
发明人： BENJAMINSON DAVID , PARKHE VIJAY D , KORA SIDDARAMAIAH ONKARA SWAMY , FLOYD KIRBY H , WANG JUSTIN , SAMIR MEHMET TUGRUL , LUBOMIRSKY DMITRY
IPC分类号： H01L21/683 , H01L21/67
摘要： 본원에설명된구현들은작업물표면에걸친온도균일성을가능하게하는기판지지조립체를제공한다. 일실시예에서, 몸체를포함하는기판지지조립체가제공된다. 몸체는세라믹으로만들어진다. 몸체는작업물지지표면및 장착표면을갖는다. 작업물지지표면및 접합척 몸체표면은 10 미크론미만의편평도를갖는다. 제1 가열기는몸체외부의바닥표면상에배치된다. 접합층은제1 가열기위에배치되고, 접합층은전기절연성이고, 금속으로만들어진몸체를갖는냉각베이스이다. 냉각몸체는상부냉각몸체표면및 하부냉각몸체표면을갖고, 상부냉각몸체표면은약 10 미크론미만으로편평하다.

6. 发明公开

KR20180028400A 웨이퍼 프로세싱 시스템들을 위한 열 관리 시스템들 및 방법들 审中-公开
标题翻译：晶圆处理系统的热管理系统和方法
公开(公告)号：KR20180028400A
公开(公告)日：2018-03-16
申请号：KR20177029590
申请日：2016-08-04
申请人： APPLIED MATERIALS INC
发明人： BENJAMINSON DAVID , LUBOMIRSKY DMITRY
IPC分类号： H01L21/687 , H01L21/324 , H01L21/67
CPC分类号： H01L21/68785 , H01L21/324 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L22/12
摘要： 작업물홀더는원통축, 원통축을중심으로한 반경, 및두께를갖는퍽을포함한다. 퍽의적어도정상부표면은실질적으로평면이고, 퍽은하나또는그 초과의열 차단부들을정의한다. 각각의열 차단부는, 원통형인퍽의정상부표면및 바닥부표면중 적어도하나와교차하는방사상리세스이다. 방사상리세스는, 퍽두께의적어도절반을통해연장되는열 차단부깊이, 및퍽 반경의적어도 1/2인열 차단부반경을갖는다. 웨이퍼를프로세싱하는방법은, 제 1 중앙-대-에지프로세스변화를제공하는제 1 프로세스로웨이퍼를프로세싱하는단계, 그리고그 이후에, 제 1 중앙-대-에지프로세스변화를실질적으로보상하는제 2 중앙-대-에지프로세스변화를제공하는제 2 프로세스로웨이퍼를프로세싱하는단계를포함한다.
摘要翻译：工件夹具包括圆柱形轴，围绕圆柱轴线的半径以及具有厚度的圆盘。至少该圆盘的上表面基本上是平面的，并且该圆盘限定一个或多个隔热罩。每个热熔断路器是与圆柱形圆盘的顶表面和底表面中的至少一个相交的径向凹槽。径向凹槽具有延伸至至少一半的圆盘厚度的热交叉深度，并且凹槽的半径的至少一半的半径。处理晶片的方法包括将晶片处理成提供第一中心到边缘处理改变的第一处理，并且此后将晶片处理成第二中心到第二处理，并用第二个工艺处理晶圆，从而提供中心到边缘的工艺变化。

7. 发明专利

JP2009117845A Rotational temperature control substrate pedestal for film uniformity 审中-公开
标题翻译：旋转温度控制基板用于膜片均匀性
公开(公告)号：JP2009117845A
公开(公告)日：2009-05-28
申请号：JP2008287978
申请日：2008-11-10
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LUBOMIRSKY DMITRY , FLOYD KIRBY H
IPC分类号： H01L21/683 , H01L21/31
CPC分类号： H01L21/68785 , C23C16/4409 , C23C16/45574 , C23C16/4584 , C23C16/463 , H01L21/68792
摘要： PROBLEM TO BE SOLVED: To provide a substrate pedestal for forming a uniform film in vacuum film forming. SOLUTION: A system includes a treatment chamber and a substrate supporting assembly which is at least partially arranged in the treatment chamber. The substrate supporting assembly is rotated by a motor, so that electricity, a cooling fluid, gas, and a vacuum are supplied to the rotational substrate supporting assembly in the treatment chamber from an external non-rotational source. The temperature of the substrate supported by the substrate supporting assembly is raised or lowered by using the cooling fluid and electrical connection. The electrical connection is also used for the electrostatic attraction of the substrate to the supporting assembly. One or a plurality of rotary seals are used for keeping treatment pressure and rotating the substrate assembly. The vacuum pump is connected to a tube connection mouth for attracting the substrate, and used for differential evacuation between a pair of rotational seals among two or more rotational seals. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供用于在真空成膜中形成均匀膜的基板基座。解决方案：系统包括处理室和至少部分地布置在处理室中的基板支撑组件。基板支撑组件由电动机旋转，使得电，冷却流体，气体和真空从外部非旋转源供应到处理室中的旋转基板支撑组件。由基板支撑组件支撑的基板的温度通过使用冷却流体和电连接而升高或降低。电连接也用于将衬底静电吸引到支撑组件。使用一个或多个旋转密封件来保持处理压力并旋转基板组件。真空泵连接到管连接口以吸引基板，并且用于在两个或更多个旋转密封之间的一对旋转密封之间的差分抽空。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007046156A Apparatus for electroless deposition of metal onto semiconductor substrate 审中-公开
标题翻译：用于金属沉积在半导体基板上的电沉积装置
公开(公告)号：JP2007046156A
公开(公告)日：2007-02-22
申请号：JP2006186953
申请日：2006-07-06
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LUBOMIRSKY DMITRY , SHANMUGASUNDRAM ARULKUMAR , PANCHAM IAN A
IPC分类号： C23C18/31 , C23C18/16 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide an integrated electroless deposition apparatus that can deposit a uniform layer with minimum defects. SOLUTION: An electroless deposition system and an electroless deposition station are provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate the surface of the substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate shuttle positioned to transfer the substrate between the first and second processing stations. The electroless deposition station also includes various fluid delivery devices and substrate temperature controlling devices to perform a contamination-free and uniform electroless deposition process. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够以最小缺陷沉积均匀层的集成无电沉积装置。解决方案：提供无电沉积系统和无电沉积站。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，第一处理站被配置为清洁和激活基板的表面;第二处理站，被配置为将层无电沉积到基板的表面上;以及基板梭，第一和第二处理站之间的基板。无电沉积站还包括各种流体输送装置和基板温度控制装置，以执行无污染和均匀的无电沉积工艺。版权所有（C）2007，JPO＆INPIT

9. 发明专利

SG185588A1 LOADLOCK BATCH OZONE CURE 未知
公开(公告)号：SG185588A1
公开(公告)日：2012-12-28
申请号：SG2012084133
申请日：2011-06-16
申请人： APPLIED MATERIALS INC
发明人： LUBOMIRSKY DMITRY , PINSON II JAY D , FLOYD KIRBY H , KHAN ADIB , VENKATARAMAN SHANKAR
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.

10. 发明专利

JP2014053645A Vacuum chucking heater of axisymmetrical and uniform thermal profile 审中-公开
标题翻译：轴对称和均匀热轮廓的真空开关加热器
公开(公告)号：JP2014053645A
公开(公告)日：2014-03-20
申请号：JP2013259036
申请日：2013-12-16
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LU SIQING , CHANDRASEKARAN BALAJI , GEE PAUL EDWARD , INGLE NITIN K , LUBOMIRSKY DMITRY , TSENG YUAN , YIEH ELLIE Y
IPC分类号： H01L21/683
CPC分类号： C23C16/4586 , C23C16/4584 , Y10T279/11
摘要： PROBLEM TO BE SOLVED: To provide an improved vacuum chucking heater for processing substrates.SOLUTION: Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes: a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the axisymmetrical grooves intersecting; and a plurality of chucking holes formed through the body and within the axisymmetrical grooves, the chucking holes being for fluidly coupling the plurality of axisymmetrical grooves to a vacuum source during operation, where the chucking holes are disposed in non-intersecting portions of the plurality of axisymmetrical grooves. The chucking holes are symmetrically arranged about a central axis of the vacuum chuck.
摘要翻译：要解决的问题：提供一种改进的用于处理衬底的真空吸盘加热器。本文提供具有轴对称和/或更均匀的热分布的真空吸盘的实施例。在一些实施例中，真空吸盘包括：主体，其具有用于支撑其上的基板的支撑表面; 多个轴对称布置的槽，形成在所述支撑表面中，所述轴对称槽中的至少一些相交; 以及多个夹持孔，穿过本体并在轴对称槽内形成，夹持孔用于在操作期间将多个轴对称槽流体耦合到真空源，其中夹紧孔设置在多个轴对称槽。夹紧孔围绕真空吸盘的中心轴对称排列。

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