专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011075563A3 SUBSTRATE PROCESSING APPARATUS HAVING A RADIANT CAVITY 审中-公开
标题翻译：具有辐射空间的基板处理装置
公开(公告)号：WO2011075563A3
公开(公告)日：2011-10-06
申请号：PCT/US2010060711
申请日：2010-12-16
申请人： APPLIED MATERIALS INC , CARLSON DAVID K , SANCHEZ ERROL , DINIZ HERMAN , KUPPURAO SATHEESH
发明人： CARLSON DAVID K , SANCHEZ ERROL , DINIZ HERMAN , KUPPURAO SATHEESH
IPC分类号： H01L21/683 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/52 , C30B25/105 , C30B25/12
摘要： Methods and apparatus for processing substrates are disclosed herein. In some embodiments, an apparatus for processing a substrate may include a substrate support having a base having a convex surface, an annular ring disposed on the base, and an edge ring disposed on the annular ring to support a substrate, wherein the base, annular ring, and edge ring form a radiant cavity capable of reflecting energy radiated from a backside of a substrate when disposed on the edge ring and wherein the backside of the substrate faces the convex surface of the base. Alternatively or in combination, in some embodiments, the base may include a metal layer encapsulated between a transparent non-metal upper layer and a non-metal lower layer.
摘要翻译：本文公开了处理衬底的方法和设备。在一些实施例中，用于处理衬底的装置可以包括具有底部的衬底支撑件，其具有凸形表面，设置在基座上的环形环和设置在环形环上以支撑衬底的边缘环，其中，环和边缘环形成辐射腔，其能够在布置在边缘环上时反射从衬底的背面辐射的能量，并且其中衬底的背面面向基底的凸面。或者或组合地，在一些实施方案中，碱可以包括密封在透明非金属上层和非金属下层之间的金属层。

2. 发明申请

WO2012145492A3 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A3
公开(公告)日：2013-01-17
申请号：PCT/US2012034222
申请日：2012-04-19
申请人： APPLIED MATERIALS INC , SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
发明人： SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

3. 发明申请

WO2008127220A3 METHODS FOR IN-SITU GENERATION OF REACTIVE ETCH AND GROWTH SPECIE IN FILM FORMATION PROCESSES 审中-公开
标题翻译：电影形成过程中反应蚀刻和生长规律的现场生成方法
公开(公告)号：WO2008127220A3
公开(公告)日：2009-04-16
申请号：PCT/US2007000338
申请日：2007-01-09
申请人： APPLIED MATERIALS INC , KUPPURAO SATHEESH , CARLSON DAVID K , BECKFORD HOWARD , SANCHEZ ERROL
发明人： KUPPURAO SATHEESH , CARLSON DAVID K , BECKFORD HOWARD , SANCHEZ ERROL
IPC分类号： C23C16/24 , C30B25/02 , C30B29/06 , H01L21/20 , H01L21/205
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译：公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。

4. 发明申请

WO2008016569A3 METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS 审中-公开
标题翻译：电子设备制造系统气体分析方法与装置
公开(公告)号：WO2008016569A3
公开(公告)日：2008-03-27
申请号：PCT/US2007017038
申请日：2007-07-30
申请人： APPLIED MATERIALS INC , CARLSON DAVID K , KUPPURAO SATHEESH
发明人： CARLSON DAVID K , KUPPURAO SATHEESH
IPC分类号： G01N7/14
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译：公开了包括在测试室中调节样品气体的压力水平的系统和方法，例如使用加压的惰性参考气体，以及确定经调整的样品气体的组成。通过调节样品气体的压力水平，可以比其他方法更准确地确定样品气体的组成。公开了许多其他方面。

5. 发明申请

WO2012148801A3 SEMICONDUCTOR SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：半导体基板处理系统
公开(公告)号：WO2012148801A3
公开(公告)日：2013-03-14
申请号：PCT/US2012034374
申请日：2012-04-20
申请人： APPLIED MATERIALS INC , SANCHEZ ERROL ANTONIO C , CARLSON DAVID K , KUPPURAO SATHEESH
发明人： SANCHEZ ERROL ANTONIO C , CARLSON DAVID K , KUPPURAO SATHEESH
IPC分类号： H01L21/205
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：提供了用于处理衬底的设备。在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件，所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径，以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从处理室。

6. 发明申请

WO2007021692A3 METHOD AND APPARATUS TO CONTROL SEMICONDUCTOR FILM DEPOSITION CHARACTERISTICS 审中-公开
标题翻译：控制半导体膜沉积特性的方法和装置
公开(公告)号：WO2007021692A3
公开(公告)日：2009-05-22
申请号：PCT/US2006030913
申请日：2006-08-08
申请人： APPLIED MATERIALS INC , CARLSON DAVID K , LAM ANDREW , HEMKAR MANISH , SANCHEZ ERROL , KUPPURAO SATHEESH , BECKFORD HOWARD
发明人： CARLSON DAVID K , LAM ANDREW , HEMKAR MANISH , SANCHEZ ERROL , KUPPURAO SATHEESH , BECKFORD HOWARD
IPC分类号： C23C16/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Methods, systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的方法，系统和装置。腔表面的多于一个部分可以进行温度调制。

7. 发明申请

WO2007109491A3 SELECTIVE DEPOSITION 审中-公开
标题翻译：选择性沉积
公开(公告)号：WO2007109491A3
公开(公告)日：2007-12-13
申请号：PCT/US2007064038
申请日：2007-03-15
申请人： APPLIED MATERIALS INC , CARLSON DAVID K , KUPPURAO SATHEESH , SANCHEZ ERROL ANTONIO C , BECKFORD HOWARD , KIM YIHWAN
发明人： CARLSON DAVID K , KUPPURAO SATHEESH , SANCHEZ ERROL ANTONIO C , BECKFORD HOWARD , KIM YIHWAN
IPC分类号： H01L21/84 , H01L21/8238
CPC分类号： H01L29/7834 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/76243 , H01L21/823814 , H01L21/8249 , H01L29/165 , H01L29/66628 , H01L29/66636 , H01L29/7848 , Y10S438/969
摘要： A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the process chamber temperature and pressure. It is beneficial to utilize HCl as the halogen containing gas because converting HCl from a carrier gas to an etching gas can easily be performed by adjusting the chamber pressure.
摘要翻译：在衬底表面上外延形成含硅材料的方法通过调节处理室的温度和压力，利用含卤素气体作为蚀刻气体以及载气。使用HCl作为含卤素气体是有利的，因为通过调节室压力可以容易地将HCl从载气转化为蚀刻气体。

8. 发明申请

WO2011156141A3 WINDOW ASSEMBLY FOR USE IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于基板处理系统的窗口总成
公开(公告)号：WO2011156141A3
公开(公告)日：2012-03-29
申请号：PCT/US2011038053
申请日：2011-05-26
申请人： APPLIED MATERIALS INC , CARLSON DAVID K
发明人： CARLSON DAVID K
IPC分类号： H01L21/02
CPC分类号： H01L21/67115
摘要： Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element.
摘要翻译：本文提供了窗组件的实施例。在一些实施例中，一种用于衬底处理系统的窗户组件，其包括对光能至少部分透明的第一窗口; 对光能透明并基本上平行于第一窗的第二窗口; 以及分隔件，其设置在所述第一和第二窗口的周边边缘附近并且限定所述第一和第二窗口之间的密封间隙，其中所述隔板具有使气体流过所述密封间隙的入口和出口。在一些实施例中，一个或多个支撑元件设置在密封间隙中以保持第一和第二窗口之间的基本均匀的间隙距离。在一些实施例中，多个调光元件设置在间隙中以调节通过光调节元件的光能的一个或多个特性。

9. 发明申请

WO2008005754A3 MODULAR CHEMICAL VAPOR DEPOSITION (CVD) REACTOR 审中-公开
标题翻译：模块化学气相沉积（CVD）反应器
公开(公告)号：WO2008005754A3
公开(公告)日：2008-10-23
申请号：PCT/US2007072121
申请日：2007-06-26
申请人： APPLIED MATERIALS INC , BURROWS BRIAN H , METZNER CRAIG R , DEMARS DENNIS L , ANDERSON ROGER N , CHACIN JUAN M , CARLSON DAVID K , ISHIKAWA DAVID MASAYUKI , CAMPBELL JEFFREY , COLLINS RICHARD O , MAGILL KEITH M , AFZAL IMRAN
发明人： BURROWS BRIAN H , METZNER CRAIG R , DEMARS DENNIS L , ANDERSON ROGER N , CHACIN JUAN M , CARLSON DAVID K , ISHIKAWA DAVID MASAYUKI , CAMPBELL JEFFREY , COLLINS RICHARD O , MAGILL KEITH M , AFZAL IMRAN
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/67017 , H01L21/6719
摘要： The present invention provides an apparatus for processing semiconductor substrates. Particularly, the present invention provides a modular processing cell. The modular semiconductor processing cell of the present invention comprises a chamber (201) having an inject cap (213) and a gas panel module (207) configured to supply one or more processing gases to the chamber through the inject cap, wherein the gas panel module is positioned adjacent the inject cap. The processing module further comprises a lamp module (203) positioned below the chamber. The lamp module comprises a plurality of vertically oriented lamps.
摘要翻译：本发明提供一种半导体基板的处理装置。特别地，本发明提供了一种模块化处理单元。本发明的模块化半导体处理单元包括具有注入盖（213）和气体面板模块（207）的腔室（201），其配置成通过喷射盖将一个或多个处理气体供应到腔室，其中气体面板模块位于喷射盖附近。处理模块还包括位于室下方的灯模块（203）。灯模块包括多个垂直取向的灯。

10. 发明申请

WO2012148802A3 CHEMICAL DELIVERY SYSTEM 审中-公开
标题翻译：化学输送系统
公开(公告)号：WO2012148802A3
公开(公告)日：2013-03-21
申请号：PCT/US2012034375
申请日：2012-04-20
申请人： APPLIED MATERIALS INC , JOSEPHSON MARCEL E , CARLSON DAVID K , JUMPER STEVE , SANCHEZ ERROL ANTONIO C
发明人： JOSEPHSON MARCEL E , CARLSON DAVID K , JUMPER STEVE , SANCHEZ ERROL ANTONIO C
IPC分类号： H01L21/02
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式