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1. 发明申请

WO2012145492A2 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A2
公开(公告)日：2012-10-26
申请号：PCT/US2012/034222
申请日：2012-04-19
申请人： APPLIED MATERIALS, INC. , SANCHEZ, Errol Antonio C. , COLLINS, Richard O. , CARLSON, David K. , BAUTISTA, Kevin , DINIZ, Herman P. , PATALAY, Kailash , MYO, Nyi O. , DEMARS, Dennis L. , MARCADAL, Christophe , JUMPER, Steve , KUPPURAO, Satheesh
发明人： SANCHEZ, Errol Antonio C. , COLLINS, Richard O. , CARLSON, David K. , BAUTISTA, Kevin , DINIZ, Herman P. , PATALAY, Kailash , MYO, Nyi O. , DEMARS, Dennis L. , MARCADAL, Christophe , JUMPER, Steve , KUPPURAO, Satheesh
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一工艺气体和第二流动路径以提供独立于第一工艺气体的第二工艺气体，其中喷射器被定位成在衬底的处理表面上提供第一和第二工艺气体，设置在衬底支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

2. 发明申请

WO2011156141A3 WINDOW ASSEMBLY FOR USE IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于基板处理系统的窗口总成
公开(公告)号：WO2011156141A3
公开(公告)日：2012-03-29
申请号：PCT/US2011038053
申请日：2011-05-26
申请人： APPLIED MATERIALS INC , CARLSON DAVID K
发明人： CARLSON DAVID K
IPC分类号： H01L21/02
CPC分类号： H01L21/67115
摘要： Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element.
摘要翻译：本文提供了窗组件的实施例。在一些实施例中，一种用于衬底处理系统的窗户组件，其包括对光能至少部分透明的第一窗口; 对光能透明并基本上平行于第一窗的第二窗口; 以及分隔件，其设置在所述第一和第二窗口的周边边缘附近并且限定所述第一和第二窗口之间的密封间隙，其中所述隔板具有使气体流过所述密封间隙的入口和出口。在一些实施例中，一个或多个支撑元件设置在密封间隙中以保持第一和第二窗口之间的基本均匀的间隙距离。在一些实施例中，多个调光元件设置在间隙中以调节通过光调节元件的光能的一个或多个特性。

3. 发明申请

WO2011031672A2 PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：外源化学气相沉积并联体系
公开(公告)号：WO2011031672A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/047993
申请日：2010-09-07
申请人： APPLIED MATERIALS, INC. , CARLSON, David, K. , SANCHEZ, Errol, Antonio, C. , DINIZ, Herman, P.
发明人： CARLSON, David, K. , SANCHEZ, Errol, Antonio, C. , DINIZ, Herman, P.
IPC分类号： H01L21/20
CPC分类号： C23C16/44 , C30B25/08 , C30B25/14
摘要： Embodiments of a parallel system for epitaxial deposition are disclosed herein. In some embodiments, a parallel system for epitaxial deposition includes a first body having a first process chamber and a second process chamber disposed within the first body; a shared gas injection system coupled to each of the first and the second process chambers; and a shared exhaust system coupled to each of the first and second process chambers, the exhaust system having independent control of an exhaust pressure from each chamber. In some embodiments, the gas injection system provides independent control of flow rate of a gas entering each chamber.
摘要翻译：本文公开了用于外延沉积的并联系统的实施例。在一些实施例中，用于外延沉积的并联系统包括具有第一处理室和设置在第一主体内的第二处理室的第一主体; 耦合到所述第一和第二处理室中的每一个的共用气体注入系统; 以及联接到所述第一和第二处理室中的每一个的共用排气系统，所述排气系统独立地控制来自每个室的排气压力。在一些实施例中，气体注入系统提供进入每个室的气体的流速的独立控制。

4. 发明申请

WO2009014894A1 METHOD AND APPARATUS FOR CLEANING A SUBSTRATE SURFACE 审中-公开
标题翻译：用于清洁基板表面的方法和装置
公开(公告)号：WO2009014894A1
公开(公告)日：2009-01-29
申请号：PCT/US2008/069430
申请日：2008-07-08
申请人： APPLIED MATERIALS, INC. , SANCHEZ, Errol Antonio C. , SWENBERG, Johanes , CARLSON, David K. , DOHERTY, Roisin L.
发明人： SANCHEZ, Errol Antonio C. , SWENBERG, Johanes , CARLSON, David K. , DOHERTY, Roisin L.
IPC分类号： H01L21/00
CPC分类号： H01L21/67017 , C30B25/08 , C30B29/06 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/67028 , H01L21/67069 , Y10S438/976
摘要： The present invention generally provides apparatus and method for forming a clean and damage free surface on a semiconductor substrate. One embodiment of the present invention provides a system that contains a cleaning chamber that is adapted to expose a surface of substrate to a plasma cleaning process prior to forming an epitaxial layer thereon. In one embodiment, a method is employed to reduce the contamination of a substrate processed in the cleaning chamber by depositing a gettering material on the inner surfaces of the cleaning chamber prior to performing a cleaning process on a substrate. In one embodiment, oxidation and etching steps are repeatedly performed on a substrate in the cleaning chamber to expose or create a clean surface on a substrate that can then have an epitaxial placed thereon. In one embodiment, a low energy plasma is used during the cleaning step.
摘要翻译：本发明总体上提供了用于在半导体衬底上形成清洁和破坏自由表面的装置和方法。本发明的一个实施例提供一种系统，其包含适于在衬底上形成外延层之前将衬底的表面暴露于等离子体清洁工艺的清洁室。在一个实施方案中，采用一种方法来减少在清洁室中处理的基材的污染物，其中在对基材进行清洁处理之前，通过在清洁室的内表面上沉积吸气材料。在一个实施例中，在清洁室中的基板上重复执行氧化和蚀刻步骤以暴露或产生衬底上的清洁表面，然后可以在其上放置外延。在一个实施例中，在清洁步骤期间使用低能量等离子体。

5. 发明申请

WO2008127220A2 METHODS FOR IN-SITU GENERATION OF REACTIVE ETCH AND GROWTH SPECIE IN FILM FORMATION PROCESSES 审中-公开
标题翻译：电影形成过程中反应蚀刻和生长规律的现场生成方法
公开(公告)号：WO2008127220A2
公开(公告)日：2008-10-23
申请号：PCT/US2007/000338
申请日：2007-01-09
申请人： APPLIED MATERIALS, INC. , KUPPURAO, Satheesh , CARLSON, David, K. , BECKFORD, Howard , SANCHEZ, Errol
发明人： KUPPURAO, Satheesh , CARLSON, David, K. , BECKFORD, Howard , SANCHEZ, Errol
CPC分类号： H01L21/02532 , C23C16/452 , C30B25/02 , C30B29/06 , H01L21/02529 , H01L21/0262 , H01L21/02636
摘要： Methods and apparatus are disclosed for the formation and utilization of metastable specie in a reaction chamber for processing substrates. The metastable specie may be used for etching the surface of substrates in situ, deposition processes during processing of the substrate.
摘要翻译：公开了用于在处理衬底的反应室中形成和利用亚稳态物质的方法和装置。亚稳态物质可用于原位蚀刻衬底表面，在衬底加工过程中沉积过程。

6. 发明申请

WO2007137035A3 IN SITU CLEANING OF CVD SYSTEM EXHAUST 审中-公开
公开(公告)号：WO2007137035A3
公开(公告)日：2007-11-29
申请号：PCT/US2007/068948
申请日：2007-05-15
申请人： APPLIED MATERIALS, INC. , CARLSON, David, K.
发明人： CARLSON, David, K.
IPC分类号： C23C16/44 , C23C16/48
摘要： Embodiments of the invention relate to methods and apparatus are disclosed for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.

7. 发明申请

WO2012145492A3 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A3
公开(公告)日：2013-01-17
申请号：PCT/US2012034222
申请日：2012-04-19
申请人： APPLIED MATERIALS INC , SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
发明人： SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

8. 发明申请

WO2012148802A2 CHEMICAL DELIVERY SYSTEM 审中-公开
标题翻译：化学输送系统
公开(公告)号：WO2012148802A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/034375
申请日：2012-04-20
申请人： APPLIED MATERIALS, INC. , JOSEPHSON, Marcel E. , CARLSON, David K. , JUMPER, Steve , SANCHEZ, Errol Antonio C.
发明人： JOSEPHSON, Marcel E. , CARLSON, David K. , JUMPER, Steve , SANCHEZ, Errol Antonio C.
IPC分类号： H01L21/02
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

9. 发明申请

WO2012134512A1 METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS 审中-公开
标题翻译：外源锗锗合金选择性沉积的方法和装置
公开(公告)号：WO2012134512A1
公开(公告)日：2012-10-04
申请号：PCT/US2011/045795
申请日：2011-07-28
申请人： APPLIED MATERIALS, INC. , SANCHEZ, Errol Antonio C. , CARLSON, David K.
发明人： SANCHEZ, Errol Antonio C. , CARLSON, David K.
IPC分类号： H01L21/20 , H01L21/205 , H01L21/8238
CPC分类号： C30B25/14 , C23C16/08 , C23C16/4412 , C23C16/4584 , C23C16/4586 , C30B23/02 , C30B23/06 , C30B23/063 , C30B23/066 , C30B25/10 , C30B25/16 , C30B29/08 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/02636 , H01L29/1054
摘要： A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.
摘要翻译：描述了形成异质结应力层的方法和装置。将锗前体和金属前体提供到室，并在基板上形成锗 - 金属合金外延层。金属前体通常是金属卤化物，其可以通过升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。

10. 发明申请

WO2012047361A1 METHODS FOR DEPOSITING GERMANIUM-CONTAINING LAYERS 审中-公开
标题翻译：沉积包含锗的层的方法
公开(公告)号：WO2012047361A1
公开(公告)日：2012-04-12
申请号：PCT/US2011/045302
申请日：2011-07-26
申请人： APPLIED MATERIALS, INC. , SANCHEZ, Errol , HUANG, Yi-Chiau , CARLSON, David K.
发明人： SANCHEZ, Errol , HUANG, Yi-Chiau , CARLSON, David K.
IPC分类号： H01L21/205 , H01L21/20
CPC分类号： H01L21/02381 , H01L21/0237 , H01L21/02529 , H01L21/02532 , H01L21/02535 , H01L21/02573 , H01L21/0262
摘要： Methods for depositing germanium-containing layers on silicon-containing layers are provided herein. In some embodiments, a method may include depositing a first layer atop an upper surface of the silicon-containing layer, wherein the first layer comprises predominantly germanium (Ge) and further comprises a lattice adjustment element having a concentration selected to enhance electrical activity of dopant elements, wherein the dopant elements are disposed in at least one of the first layer or in an optional second layer deposited atop of the first layer, wherein the optional second layer, if present, comprises predominantly germanium (Ge). In some embodiments, the second layer is deposited atop the first layer. In some embodiments, the second layer comprises germanium (Ge) and dopant elements.
摘要翻译：本文提供了在含硅层上沉积含锗层的方法。在一些实施例中，一种方法可以包括沉积位于含硅层的上表面顶部的第一层，其中第一层主要包含锗（Ge），并且还包括具有选择以增强掺杂剂的电活性的浓度的晶格调节元件元素，其中所述掺杂剂元素设置在所述第一层中的至少一个中或沉积在所述第一层顶部的任选的第二层中，其中所述任选的第二层（如果存在）主要包含锗（Ge）。在一些实施例中，第二层沉积在第一层的顶部。在一些实施例中，第二层包括锗（Ge）和掺杂元素。

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