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1. 发明申请

WO2010025253A4 LOAD LOCK CHAMBER FOR LARGE AREA SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：用于大面积基板处理系统的负载锁室
公开(公告)号：WO2010025253A4
公开(公告)日：2010-07-22
申请号：PCT/US2009055200
申请日：2009-08-27
申请人： APPLIED MATERIALS INC , BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO , ANWAR SUHAIL
发明人： BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO , ANWAR SUHAIL
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/67201 , H01L21/67236
摘要： The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于将大面积基板传送到真空处理室中的负载锁定室。负载锁定室可能有一个或多个独立的，环境隔离的环境。每个处理环境可以具有用于抽真空的多个排气口。排气口可以位于处理环境的角落处。当基板从工厂接口插入负载锁定室时，环境可能需要撤离。由于排气口位于环境的角落处，可能存在的任何微粒或污染物可能会被拉到最近的拐角并从负载锁定室流出，而不会被拉过基板。因此，基板污染可能会减少。

2. 发明申请

WO2010025253A3 LOAD LOCK CHAMBER FOR LARGE AREA SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：大面积底板加工系统的负载锁仓
公开(公告)号：WO2010025253A3
公开(公告)日：2010-06-03
申请号：PCT/US2009055200
申请日：2009-08-27
申请人： APPLIED MATERIALS INC , BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO , ANWAR SUHAIL
发明人： BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO , ANWAR SUHAIL
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： H01L21/67201 , H01L21/67236
摘要： The present invention generally includes a load lock chamber for transferring large area substrates into a vacuum processing chamber. The load lock chamber may have one or more separate, environmentally isolated environments. Each processing environment may have a plurality exhaust ports for drawing a vacuum. The exhaust ports may be located at the corners of the processing environment. When a substrate is inserted into the load lock chamber from the factory interface, the environment may need to be evacuated. Due to the exhaust ports located at the corners of the environment, any particles or contaminants that may be present may be pulled to the closest corner and out of the load lock chamber without being pulled across the substrate. Thus, substrate contamination may be reduced.
摘要翻译：本发明通常包括用于将大面积基板输送到真空处理室中的负载锁定室。负载锁定室可以具有一个或多个单独的环境隔离环境。每个处理环境可以具有用于抽真空的多个排气口。排气口可以位于处理环境的拐角处。当基板从出厂界面插入加载锁定室时，环境可能需要抽真空。由于位于环境角落处的排气口，可能存在的任何颗粒或污染物可被拉到最靠近的角落并且不被拉过载体锁定室。因此，可能降低衬底污染。

3. 发明申请

WO2010025257A3 SLOTTED TSSL DOOR TO COUPLE O-RING WITH MOVING MATING PART 审中-公开
标题翻译：开槽TSSL门用于连接O形圈与移动部件
公开(公告)号：WO2010025257A3
公开(公告)日：2010-05-20
申请号：PCT/US2009055206
申请日：2009-08-27
申请人： APPLIED MATERIALS INC , BEHDJAT MEHRAN , KURITA SHINICHI , WHITE JOHN M , ANWAR SUHAIL , INAGAWA MAKOTO
发明人： BEHDJAT MEHRAN , KURITA SHINICHI , WHITE JOHN M , ANWAR SUHAIL , INAGAWA MAKOTO
IPC分类号： F16K1/24
CPC分类号： H01L21/67201 , F16K15/147 , F16K51/02 , H01L21/67126
摘要： Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.
摘要翻译：此处公开的实施例总体上涉及用于密封腔室中的开口的狭缝阀门组件。当狭缝阀开口收缩时，压靠在腔室上以密封狭缝阀开口的狭缝阀门随着腔室移动，使得在狭缝阀门和腔室之间挤压的O形环可以与狭缝阀门一起移动，室。因此，可能发生较少摩擦O形环在腔室上。摩擦较少时，可能会产生较少的颗粒，并可能延长O型环寿命。由于O形环的使用寿命更长，因此可能会增加基材的产量。

4. 发明申请

WO2010056615A3 ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING 审中-公开
标题翻译：具有高发射率涂层的大型真空室主体的电子束焊接
公开(公告)号：WO2010056615A3
公开(公告)日：2010-07-22
申请号：PCT/US2009063671
申请日：2009-11-09
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , BEHDJAT MEHRAN , INAGAWA MAKOTO
发明人： KURITA SHINICHI , BEHDJAT MEHRAN , INAGAWA MAKOTO
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： B65D7/06 , B23K15/0006 , B65D7/38 , H01L21/67379
摘要： Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.
摘要翻译：这里公开的实施例涉及已经焊接在一起的大型真空室主体。腔室主体可以在其中的至少一个表面上具有高发射率涂层。由于腔体的大尺寸，腔体可以通过将多个零件焊接在一起而不是由单件金属锻造主体来形成。这些部件可以在离开主体角部的位置处被焊接在一起，该位置可能在抽空期间处于最大应力下，以确保可能是身体中最弱点的焊接不会失效。腔室主体的至少一个表面可以涂覆有高发射率涂层以帮助来自进入的，加热的基板的热传递。高发射率涂层可通过降低可能需要的时间来降低衬底温度来增加衬底通过量。

5. 发明申请

WO2010056615A4 ELECTRON BEAM WELDING OF LARGE VACUUM CHAMBER BODY HAVING A HIGH EMISSIVITY COATING 审中-公开
标题翻译：具有高电感涂层的大型真空室体的电子束焊接
公开(公告)号：WO2010056615A4
公开(公告)日：2010-09-10
申请号：PCT/US2009063671
申请日：2009-11-09
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , BEHDJAT MEHRAN , INAGAWA MAKOTO
发明人： KURITA SHINICHI , BEHDJAT MEHRAN , INAGAWA MAKOTO
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： B65D7/06 , B23K15/0006 , B65D7/38 , H01L21/67379
摘要： Embodiments disclosed herein relate to a large vacuum chamber body that has been welded together. The chamber body may have a high emissivity coating on at least one surface therein. Due to the large size of the chamber body, the chamber body may be formed by welding several pieces together rather than forging the body from a single piece of metal. The pieces may be welded together at a location spaced from the corner of the body, which may be under the greatest stress during evacuation, to ensure that the weld, which may be the weakest point in the body, does not fail. At least one surface of the chamber body may be coated with a high emissivity coating to aid in heat transfer from incoming, heated substrates. The high emissivity coating may increase substrate throughput by lowering the time that may be needed to reduce the substrate temperature.
摘要翻译：本文公开的实施例涉及已经焊接在一起的大型真空室主体。腔体可以在其中的至少一个表面上具有高发射率涂层。由于腔室主体的尺寸较大，可以通过将多个部件焊接在一起而不是从单个金属件锻造主体而形成腔体。这些部件可以在与身体的角部间隔开的位置处被焊接在一起，该位置在排空期间可能处于最大的应力下，以确保可能是身体中最弱点的焊缝不会失效。室主体的至少一个表面可以涂覆有高发射率涂层，以帮助来自加热的基底的热传递。高发射率涂层可以通过降低降低衬底温度所需的时间来增加衬底通量。

6. 发明申请

WO2011137373A3 VERTICAL INLINE CVD SYSTEM 审中-公开
公开(公告)号：WO2011137373A3
公开(公告)日：2012-02-09
申请号：PCT/US2011034623
申请日：2011-04-29
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
发明人： KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
IPC分类号： C23C16/50 , C23C16/44 , H01L21/205
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

7. 发明申请

WO2010009048A2 TUBE DIFFUSER FOR LOAD LOCK CHAMBER 审中-公开
标题翻译：用于加载锁定室的管扩散器
公开(公告)号：WO2010009048A2
公开(公告)日：2010-01-21
申请号：PCT/US2009050402
申请日：2009-07-13
申请人： APPLIED MATERIALS INC , BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO
发明人： BEHDJAT MEHRAN , KURITA SHINICHI , INAGAWA MAKOTO
IPC分类号： C23C16/44 , C23C16/54 , H01L21/205
CPC分类号： C23C16/54 , H01L21/67109 , H01L21/67201
摘要： Embodiments disclosed herein generally provide a load lock chamber capable of controlling the temperature of the substrate therein. The load lock chamber may have one or more cooling fluid introduction passages that extend across the chamber. Cooling fluid, such as nitrogen gas, may flow through the cooling fluid passage and enter the load lock chamber. The cooling fluid passages may have openings to permit the cooling fluid to exit the passages and enter the load lock chamber. The openings may be arranged to permit a greater amount of cooling fluid to enter the load lock at locations corresponding to the substrate positions that are in contact with an end effector that places the substrate into the load lock chamber. Additionally, the openings may be arranged to permit a greater amount if cooling fluid to enter the load lock chamber in the center of the chamber as compared to the edge of the chamber.
摘要翻译：这里公开的实施例通常提供能够控制其中的衬底的温度的负载锁定室。负载锁定室可具有一个或多个穿过室延伸的冷却流体引入通道。诸如氮气的冷却流体可以流过冷却流体通道并进入加载锁定室。冷却流体通道可具有开口以允许冷却流体离开通道并进入加载锁定室。开口可布置成允许更大量的冷却流体在对应于基底位置的位置处进入加载锁定件，所述位置与将基底放入加载锁定室中的端部执行器接触。另外，与室的边缘相比，如果冷却流体进入腔室中心的负载锁定腔室，则开口可以布置成允许更大的量。

8. 发明申请

WO2011137373A4 VERTICAL INLINE CVD SYSTEM 审中-公开
标题翻译：垂直在线CVD系统
公开(公告)号：WO2011137373A4
公开(公告)日：2012-03-15
申请号：PCT/US2011034623
申请日：2011-04-29
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
发明人： KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
IPC分类号： C23C16/50 , C23C16/44 , H01L21/205
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明总体上涉及一种具有能够处理多个基板的处理室的垂直CVD系统。多个衬底设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是一个水平居中的垂直等离子体发生器，它允许在等离子体发生器的两侧同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两条相同的处理线，各自具有其自己的处理室，彼此相邻地布置。多个机器人用于加载和卸载处理系统中的基板。每个机器人都可以访问系统内的两条生产线。

9. 发明申请

WO2011137371A3 VERTICAL INLINE CVD SYSTEM 审中-公开
标题翻译：立式CVD系统
公开(公告)号：WO2011137371A3
公开(公告)日：2012-03-01
申请号：PCT/US2011034619
申请日：2011-04-29
申请人： APPLIED MATERIALS INC , KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
发明人： KURITA SHINICHI , KUDELA JOZEF , ANWAR SUHAIL , WHITE JOHN M , YIM DONG-KIL , WOLF HANS , ZVALO DENNIS , INAGAWA MAKOTO , MORI IKUO
IPC分类号： H01L21/205 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

10. 发明申请

WO2010091205A3 GROUND RETURN FOR PLASMA PROCESSES 审中-公开
标题翻译：等离子体处理的接地返回
公开(公告)号：WO2010091205A3
公开(公告)日：2010-11-25
申请号：PCT/US2010023236
申请日：2010-02-04
申请人： APPLIED MATERIALS INC , CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
发明人： CHOI SOO YOUNG , TINER ROBIN L , KURITA SHINICHI , WHITE JOHN M , SORENSEN CARL A , KHO JEFFREY A , ANWAR SUHAIL , FURUTA GAKU , INAGAWA MAKOTO
IPC分类号： H05H1/34 , H01L21/205
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF装置之一或两者的位移电极实现接地返回路径，耦合到腔室的底部的RF装置和电极或其组合。

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