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1. 发明专利

JPH10144663A HIGH PRESSURE INERT GAS DIL. HIGH PLASMA ION DENSITY PLASMA OXIDE ETCHING PROCESS 失效
公开(公告)号：JPH10144663A
公开(公告)日：1998-05-29
申请号：JP28881997
申请日：1997-10-21
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH , GROECHEL DAVID , HUNG RAYMOND , RICE MICHAEL , YIN GERALD ZHEYAO , DING JIAN , CUI CHUNSHI
IPC分类号： H05H1/46 , C23C16/517 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To increase the strength of a polymer passivation layer near photo resist cut faces by introducing an inert gas by a chamber vacuum pump to raise the chamber pressure of a specified high-ion density r-f plasma reactor. SOLUTION: A chamber 40 has a pedestal 54 at the bottom which has a work support plane to support a flat work 56, say a wafer. A chamber vacuum pump feeds a polymer etchant precursor gas contg. C and F to the center and periphery of the work 56 via some center gas feed line 64a and outer gas feed lines 64b-64d and then feeds an inert gas in a high pressure range over 20mT while a plasma source r-f power source 68 feeds plasma electrons in the chamber 40 at a high ion density over 10 ions/cm to raise the pressure in the chamber 40.

2. 发明专利

DE69325633T2 未知
公开(公告)号：DE69325633T2
公开(公告)日：1999-12-02
申请号：DE69325633
申请日：1993-12-01
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH S , TROW JOHN R , TSUI JOSHUA CHIU-WING , RODERICK CRAIG A , BRIGHT NICOLAS J , MARKS JEFFREY , ISHIKAWA TETSUYA , DING JIAN
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , C23C14/50 , H01L21/00 , B23K26/00 , C23C16/44
摘要： The disclosure relates to an electrostatic chuck (10) for holding a wafer (12) in a plasma processing chamber. The chuck includes a pedestal (14) having a top surface (46), an internal manifold for carrying a cooling gas, and a first plurality of holes (48) leading from the internal manifold toward said top surface; and a dielectric layer (44) on the top surface of the pedestal. The dielectric layer has a top side (54) and second plurality of holes (58), each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes (48a to g) and the second hole (58) aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

3. 发明专利

DE69325633D1 未知
公开(公告)号：DE69325633D1
公开(公告)日：1999-08-19
申请号：DE69325633
申请日：1993-12-01
申请人： APPLIED MATERIALS INC
发明人： COLLINS KENNETH S , TROW JOHN R , TSUI JOSHUA CHIU-WING , RODERICK CRAIG A , BRIGHT NICOLAS J , MARKS JEFFREY , ISHIKAWA TETSUYA , DING JIAN
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , C23C14/50 , H01L21/00 , B23K26/00 , C23C16/44
摘要： The disclosure relates to an electrostatic chuck (10) for holding a wafer (12) in a plasma processing chamber. The chuck includes a pedestal (14) having a top surface (46), an internal manifold for carrying a cooling gas, and a first plurality of holes (48) leading from the internal manifold toward said top surface; and a dielectric layer (44) on the top surface of the pedestal. The dielectric layer has a top side (54) and second plurality of holes (58), each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes (48a to g) and the second hole (58) aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

4. 发明申请

WO2005076081A2 RETICLE FABRICATION USING A REMOVABLE HARD MASK 审中-公开
标题翻译：使用可移除的硬掩模进行制造
公开(公告)号：WO2005076081A2
公开(公告)日：2005-08-18
申请号：PCT/US2005002563
申请日：2005-01-27
申请人： APPLIED MATERIALS INC , BENCHER CHRISTOPHER DENNIS , MONTGOMERY MELVIN WARREN , BUXBAUM ALEXANDER , LEE YUNG-HEE YVETTE , DING JIAN , ALMOGY GILAD , YEH WENDY H
发明人： BENCHER CHRISTOPHER DENNIS , MONTGOMERY MELVIN WARREN , BUXBAUM ALEXANDER , LEE YUNG-HEE YVETTE , DING JIAN , ALMOGY GILAD , YEH WENDY H
IPC分类号： G03F1/08 , G03F7/09
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：我们已经降低了光罩制造的临界尺寸偏差。图案转移到掩模版衬底的辐射阻挡层基本上取决于使用图案从光致抗蚀剂转移到的硬掩模。在图案转移到硬掩模期间发生的光致抗蚀剂拉回被最小化。另外，具有与辐射阻挡层的反射特性相匹配的抗反射特性的硬掩模材料使得能够减小临界尺寸尺寸并且改善硬掩模本身中的图案特征完整性。当掩模版用于半导体器件制造工艺时，留在辐射阻挡层上的抗反射硬掩模层提供了功能。

5. 发明申请

WO9936931A3 LOW CEILING TEMPERATURE PROCESS FOR A PLASMA REACTOR WITH HEATED SOURCE OF A POLYMER-HARDENING PRECURSOR MATERIAL 审中-公开
标题翻译：用于聚合物硬化前体材料的加热源的等离子体反应器的低天花板温度过程
公开(公告)号：WO9936931A3
公开(公告)日：2002-09-26
申请号：PCT/US9827046
申请日：1998-12-17
申请人： APPLIED MATERIALS INC
发明人： DING JIAN
IPC分类号： H01L21/3065 , C23C16/517 , H01J37/32 , H01L21/311 , H01L21/683
CPC分类号： H01J37/32871 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/321 , H01J37/32146 , H01J37/32165 , H01J37/32458 , H01J37/32467 , H01J37/32522 , H01J37/32688 , H01J37/32706 , H01J2237/3343 , H01J2237/3345 , H01J2237/3346 , H01J2237/3382 , H01L21/31116 , H01L21/6831
摘要： A high plasma density etch process for etching an oxygen-containing layer overlying a non-oxygen containing layer on a workpiece in a plasma reactor chamber, by providing a chamber ceiling overlying the workpiece and containing a semiconductor material, supplying into the chamber a process gas containing etchant precursor species, polymer precursor species and hydrogen, applying plasma source power into the chamber, and cooling the ceiling to a temperature range at or below about 150 degrees C. The etchant and polymer precursor species contain fluorine, and the chamber ceiling semiconductor material includes a fluorine scavenger precursor material. Preferably, the process gas includes at least one of CHF3 and CH2F2. Preferably, the process gas further includes a species including an inert gas, such as HeH2 or Ar. If the chamber is of the type including a heated fluorine scavenger precursor material, this material is heated to well above the polymer condensation temperature, while the ceiling is cooled. In some cases, the plasma source power applicator is an inductive antenna overlying the semiconductor ceiling, and the ceiling has a cooling/heating apparatus contacting the ceiling through semiconductor rings. The inductive antenna in this case constitutes inductive elements between adjacent ones of the semiconductor rings.
摘要翻译：一种高等离子体密度蚀刻工艺，用于在等离子体反应器腔室中蚀刻覆盖在工件上的非含氧层的含氧层，通过提供覆盖在工件上并容纳半导体材料的室顶部，向腔室供应工艺气体包含蚀刻剂前体物质，聚合物前体物质和氢气，将等离子体源功率施加到室中，并将天花板冷却到约150℃或以下的温度范围。蚀刻剂和聚合物前体物质含有氟，并且室顶部半导体材料包括氟清除剂前体材料。优选地，工艺气体包括CHF 3和CH 2 F 2中的至少一种。优选地，处理气体还包括包含惰性气体的物质，例如HeH 2或Ar。如果室是包括加热的氟清除剂前体材料的类型，则将该材料加热到高于聚合物冷凝温度，同时天花板被冷却。在一些情况下，等离子体源功率施加器是覆盖半导体天花板的感应天线，天花板具有通过半导体环与天花板接触的冷却/加热设备。在这种情况下，感应天线在相邻的半导体环之间构成感应元件。

6. 发明申请

WO0014793A3 IN-SITU INTEGRATED OXIDE ETCH PROCESS PARTICULARLY USEFUL FOR COPPER DUAL DAMASCENE 审中-公开
标题翻译：现场综合氧化蚀刻工艺特别适用于铜双金属
公开(公告)号：WO0014793A3
公开(公告)日：2000-06-02
申请号：PCT/US9920588
申请日：1999-09-08
申请人： APPLIED MATERIALS INC
发明人： HUNG RAYMOND , CAULFIELD JOSEPH P , TANG SUM-YEE BETTY , DING JIAN , XU TIANZONG
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76808 , Y10S438/906 , Y10S438/954
摘要： An integrated in situ oxide etch process particularly useful for a counterbore dual-damascene structure over copper having in one inter-layer dielectric level a lower nitride stop layer, a lower oxide dielectric, a lower nitride stop layer, an upper oxide dielectric layer, and an anti-reflective coating (ARC). The process is divided into a counterbore etch and a trench etch with photolithography for each, and each step is preferably performed in a high-density plasma reactor having an inductively coupled plasma source primarily generating the plasma and a capacitively coupled pedestal supporting the wafer and producing the bias power. The counterbore etch preferably includes at least four substeps of opening the ARC, etching through the upper oxide and nitride layers, selectively etching the lower oxide layer but stopping on the lower nitride layer, and a post-etch treatment for removing residue. The trench etch preferably includes the five substeps of opening the ARC, etching through the upper oxide layer but stopping on the upper nitride layers, a first post-etch treatment for removing residue, a nitride removal of the exposed portions of the upper and lower nitride layers, and a second post-etch treatment for remaining further residues. The oxide etches selective to nitride are accomplished using a fluorocarbon chemistry with high bias and a high temperature for a silicon-based scavenger for fluorine placed next to the plasma. The nitride etches and removal are accomplished by adding an oxygen-containing gas to a fluorocarbon. The final nitride removal is accomplished with very low bias power to increase selectively to nitride and reduce sputtering of the underlying copper. The post-etch treatments are oxygen plasmas with zero bias power. A preferred etchant for the upper oxide is a hydrogen-free fluorocarbon having of a least four carbon atoms. A preferred etchant for the nitride removal is a hydrofluoromethane.
摘要翻译：一种集成的原位氧化物蚀刻工艺，特别适用于铜上的沉孔双镶嵌结构，具有一层间电介质层，一层较低的氮化物阻挡层，一层较低的氧化物介质层，一层较低的氮化物阻挡层，抗反射涂层（ARC）。该工艺分别用光刻法分为沉孔蚀刻和沟槽蚀刻，并且每个步骤优选在具有主要产生等离子体的电感耦合等离子体源的高密度等离子体反应器和支撑晶片的电容耦合基座并且产生偏置力。沉孔蚀刻优选包括打开ARC的至少四个子步骤，蚀刻通过上部氧化物和氮化物层，选择性地蚀刻低氧化物层但停止在下部氮化物层上，以及用于去除残留物的蚀刻后处理。沟槽蚀刻优选包括打开ARC的五个子步骤，蚀刻穿过上部氧化物层但停止在上部氮化物层上，第一次蚀刻后处理以除去残余物，去除上部和下部氮化物的暴露部分的氮化物层，以及用于剩余另外的残余物的第二次蚀刻后处理。对氮化物的选择性的氧化物蚀刻是使用氟离子化学方法实现的，该化合物具有高偏压和高温，用于放置在等离子体旁边的用于氟的硅基清除剂。通过向碳氟化合物中加入含氧气体来实现氮化物蚀刻和去除。最终的氮化物去除通过非常低的偏置功率实现，以选择性地增加氮化物并减少下面的铜的溅射。蚀刻后处理是具有零偏压功率的氧等离子体。上述氧化物优选的蚀刻剂是具有至少四个碳原子的无氢碳氟化合物。用于氮化物去除的优选蚀刻剂是氢氟甲烷。

7. 发明申请

WO9916110A3 PLASMA PROCESS FOR SELECTIVELY ETCHING OXIDE USING FLUOROPROPANE OR FLUOROPROPYLENE 审中-公开
标题翻译：使用氟代丙烯或氟丙烯选择性地消除氧化物的等离子体处理
公开(公告)号：WO9916110A3
公开(公告)日：1999-06-10
申请号：PCT/US9817216
申请日：1998-08-19
申请人： APPLIED MATERIALS INC
发明人： WANG RUIPING , YIN GERALD Z , LU HAO A , WU ROBERT W , DING JIAN
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116
摘要： A plasma etch process, particularly applicable to a self-aligned contact etch in a high-density plasma for selectively etching oxide over nitride, although selectivity to silicon is also achieved. In the process, a fluoropropane or a fluoropropylene is a principal etching gas in the presence of a substantial amount of an inactive gas such as argon. Good nitride selectivity has been achieved with hexafluoropropylene (C3F6), octafluoropropane (C3F8), heptafluoropropane (C3HF7), hexafluoropropane (C3H2F6). The process may use one or more of these gases in proportions to optimize selectivity and a wide process window. Difluoromethane (CH2F2) or other fluorocarbons may be combined with the above gases, particularly with C3F6 for optimum selectivity over other materials without the occurrence of etch stop in narrow contact holes and with a wide process window.
摘要翻译：等离子体蚀刻工艺，特别适用于高密度等离子体中的自对准接触蚀刻，用于选择性地蚀刻氮化物上的氧化物，尽管也可获得对硅的选择性。在此过程中，氟丙烷或氟丙烯是在大量惰性气体如氩气存在下的主要蚀刻气体。使用六氟丙烯（C 3 F 6），八氟丙烷（C 3 F 8），七氟丙烷（C 3 H F 7），六氟丙烷（C 3 H 2 F 6）已经实现了良好的氮化物选择性。该方法可以按比例使用一种或多种这些气体来优化选择性和宽的工艺窗口。二氟甲烷（CH 2 F 2）或其它碳氟化合物可以与上述气体，特别是与C3F6组合，以优于其他材料的选择性，而不会在狭窄的接触孔和宽的工艺窗口中发生蚀刻停止。

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