专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012125656A2 METHODS FOR ETCH OF SIN FILMS 审中-公开
标题翻译：用于蚀刻SIN膜的方法
公开(公告)号：WO2012125656A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/028957
申请日：2012-03-13
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065 , H01L21/318
CPC分类号： H01L21/31116 , C09K13/00 , H01J37/32357 , H01J37/32422 , H01L21/02164 , H01L21/0217 , H01L21/3065 , H01L21/311 , H01L21/32135 , H01L21/32136 , H01L21/32137 , H01L21/67069
摘要： A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包括氮化硅层和氧化硅层的衬底选择性地蚀刻氮化硅的方法包括：使含氟气体流入衬底处理室的等离子体产生区域，并且将能量施加到在等离子体产生区域中产生等离子体的含氟气体。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应性气体并且使反应性气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻氮化硅层。

2. 发明申请

WO2012125654A2 METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS 审中-公开
标题翻译：金属和金属氧化物膜的蚀刻方法
公开(公告)号：WO2012125654A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/028952
申请日：2012-03-13
申请人： APPLIED MATERIALS, INC. , ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
发明人： ZHANG, Jingchun , WANG, Anchuan , INGLE, Nitin
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32422 , H01L21/31122 , H01L21/32136
摘要： A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
摘要翻译：从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括将含氟气体流入基板处理室的等离子体产生区域，并将能量施加到含氟气体在等离子体产生区域中产生等离子体。等离子体包含氟自由基和氟离子。该方法还包括过滤等离子体以提供具有比氟离子更高浓度的氟自由基的反应气体，并使反应气体流入基板处理室的气体反应区域。该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。反应气体以比反应气体更高的蚀刻速率蚀刻含金属层蚀刻氧化硅层。

3. 发明申请

WO2012106033A2 UNIFORM DRY ETCH IN TWO STAGES 审中-公开
标题翻译：两阶段均匀干燥
公开(公告)号：WO2012106033A2
公开(公告)日：2012-08-09
申请号：PCT/US2011/064724
申请日：2011-12-13
申请人： APPLIED MATERIALS, INC. , YANG, Dongqing , TANG, Jing , INGLE, Nitin
发明人： YANG, Dongqing , TANG, Jing , INGLE, Nitin
CPC分类号： H01L21/31116
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
摘要翻译：描述了从多个沟槽蚀刻氧化硅的方法，其允许沟槽之间更均匀的蚀刻速率。蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更平滑。该方法包括两个干蚀刻阶段，接着是升华步骤。第一次干蚀刻阶段快速去除氧化硅并产生大的固体残渣颗粒。第二干蚀刻步骤缓慢除去氧化硅，并在大的固体残渣颗粒中产生小的固体残渣颗粒。在随后的升华步骤中，小和大的固体残余物都被去除。两个干蚀刻阶段之间没有升华步骤。

4. 发明申请

WO2013032873A1 DOUBLE PATTERNING ETCHING PROCESS 审中-公开
标题翻译：双重图案蚀刻过程
公开(公告)号：WO2013032873A1
公开(公告)日：2013-03-07
申请号：PCT/US2012/052171
申请日：2012-08-23
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , TANG, Jing , BHATNAGAR, Ajay , INGLE, Nitin , VENKATARAMAN, Shankar
发明人： SAPRE, Kedar , TANG, Jing , BHATNAGAR, Ajay , INGLE, Nitin , VENKATARAMAN, Shankar
IPC分类号： H01L21/027
CPC分类号： H01L21/31144 , H01J37/32357 , H01J2237/334 , H01L21/0274 , H01L21/0337 , H01L21/3086 , H01L21/31116
摘要： A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100 C.
摘要翻译：蚀刻衬底的方法包括在衬底上形成由氧化硅，氮化硅或氮氧化硅组成的多个双重构图特征。具有双重图案化特征的基板被提供到处理区域。包括三氟化氮，氨和氢的蚀刻气体在远程室中通电。通电的蚀刻气体被引入到工艺区中以蚀刻双重图案化特征以在衬底上形成固体残余物。固体残余物通过将基底加热至至少约100℃的温度升华。

5. 发明申请

WO2005033361A1 GAS DISTRIBUTION SHOWERHEAD 审中-公开
标题翻译：气体分配淋浴
公开(公告)号：WO2005033361A1
公开(公告)日：2005-04-14
申请号：PCT/US2004/031424
申请日：2004-09-24
申请人： APPLIED MATERIALS, INC. , JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
发明人： JANAKIRAMAN, Karthik , INGLE, Nitin , YUAN, Zheng , GIANOULAKIS, Steven
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/45565
摘要： A gas distribution showerhead (1501) is designed to allow deposition of uniformly thick films over a wide range of showerhead-to-wafer spacings (y). In accordance with one embodiment of the present invention, the number, width, and/or depth of orifices inlet (1501a) to the faceplate are reduced in order to increase flow resistance and thereby elevate pressure upstream of the faceplate. This elevated upstream gas flow pressure in turn reduces variation in the velocity of gas flowed through center portions of the showerhead relative to edge portions, thereby ensuring uniformity in thickness of film deposited on the edge or center portions of the wafer.
摘要翻译：气体分配喷头（1501）被设计成允许在宽范围的淋浴头到晶片间隔（y）上沉积均匀的厚膜。根据本发明的一个实施例，面板的孔口入口（1501a）的数量，宽度和/或深度减小，以增加流动阻力，从而提高面板上游的压力。这种升高的上游气体流量压力又降低了通过喷头的中心部分相对于边缘部分流动的气体的速度变化，从而确保沉积在晶片的边缘或中心部分上的膜的厚度均匀。

6. 发明申请

WO2011025655A2 SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS 审中-公开
标题翻译：用于含碳膜的硅选择性干法蚀刻
公开(公告)号：WO2011025655A2
公开(公告)日：2011-03-03
申请号：PCT/US2010/045056
申请日：2010-08-10
申请人： APPLIED MATERIALS, INC. , SAPRE, Kedar , TANG, Jing , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin
发明人： SAPRE, Kedar , TANG, Jing , WANG, Linlin , MALLICK, Abhijit Basu , INGLE, Nitin
IPC分类号： H01L21/3065 , G03F7/42 , B44C1/22
CPC分类号： H01L21/3065 , H01L21/31116
摘要： A method of etching silicon-and-carbon-containing material is described and includes a SiConi TM etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi TM etch reducing the carbon content in the near surface region and allowing the SiConi TM etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi TM etch further improving the effective etch rate.
摘要翻译：描述了一种蚀刻含硅和碳材料的方法，其包括SiConi TM蚀刻与活性氧流的组合。在SiConi TM蚀刻降低近表面区域中的碳含量并允许SiConi TM蚀刻更快进行之前可引入活性氧。或者，可以在SiConi TM蚀刻期间引入活性氧，从而进一步提高有效蚀刻速率。

7. 发明申请

WO2011139435A2 HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE 审中-公开
标题翻译：具有减少后固化残留物的高温选择性干燥剂
公开(公告)号：WO2011139435A2
公开(公告)日：2011-11-10
申请号：PCT/US2011/030582
申请日：2011-03-30
申请人： APPLIED MATERIALS, INC. , THADANI, Kiran V. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
发明人： THADANI, Kiran V. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357
摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
摘要翻译：描述了干法蚀刻含硅介电膜的方法。这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。部分或完全避免固体残余物的积累增加了蚀刻速率。

8. 发明申请

WO2011115761A2 INVERTABLE PATTERN LOADING WITH DRY ETCH 审中-公开
标题翻译：无法模式加载干燥刻蚀
公开(公告)号：WO2011115761A2
公开(公告)日：2011-09-22
申请号：PCT/US2011/027221
申请日：2011-03-04
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin , YANG, Dongqing , VENKATARAMAN, Shankar
发明人： TANG, Jing , INGLE, Nitin , YANG, Dongqing , VENKATARAMAN, Shankar
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开口区域）蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻更进一步。该方法包括两个干法蚀刻循环。第一次干蚀刻循环涉及低强度或缩短的升华步骤，在狭窄的沟槽中留下固体残余物。剩余的固体残余物在第二干法蚀刻循环期间抑制了窄沟槽中的蚀刻进程，从而允许宽沟槽中的蚀刻超过了窄沟槽中的蚀刻。

9. 发明申请

WO2011087580A1 SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS 审中-公开
标题翻译：用于含硅片的SMOOTH SICONI蚀刻
公开(公告)号：WO2011087580A1
公开(公告)日：2011-07-21
申请号：PCT/US2010/057676
申请日：2010-11-22
申请人： APPLIED MATERIALS, INC. , TANG, Jing , INGLE, Nitin , YANG, Dongqing
发明人： TANG, Jing , INGLE, Nitin , YANG, Dongqing
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.
摘要翻译：描述了蚀刻含硅材料的方法，并且包括与现有技术中发现的氢相比具有更大或更小的氢流量比的SiConiTM蚀刻。已经发现以这种方式修改流速比降低了蚀刻后表面的粗糙度并且减少了密集和稀疏图案化区域之间的蚀刻速率的差异。降低蚀刻后表面粗糙度的替代方法包括脉冲前体和/或等离子体功率的流动，维持相对高的衬底温度并以多个步骤执行SiConiTM。单独或组合的这些方法中的每一种用于通过限制固体残余物颗粒尺寸来减少蚀刻表面的粗糙度。

10. 发明申请

WO2010059790A2 INTEGRATION SEQUENCES WITH TOP PROFILE MODIFICATION 审中-公开
标题翻译：具有顶级简档修改的集成序列
公开(公告)号：WO2010059790A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/065088
申请日：2009-11-19
申请人： APPLIED MATERIALS, INC. , KAO, Chien-Teh , LU, Xinliang , GE, Zhenbin , CHANG, Mei , HUNG, Hoiman, Raymond , INGLE, Nitin
发明人： KAO, Chien-Teh , LU, Xinliang , GE, Zhenbin , CHANG, Mei , HUNG, Hoiman, Raymond , INGLE, Nitin
IPC分类号： H01L21/76 , H01L21/306
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例一般涉及用于处理半导体衬底的装置和方法。特别地，本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆，在填充的沟槽结构中形成凹陷。通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式