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1. 发明申请

WO2018218078A1 SELECTIVE DEPOSITION OF METAL SILICIDES 审中-公开
公开(公告)号：WO2018218078A1
公开(公告)日：2018-11-29
申请号：PCT/US2018/034482
申请日：2018-05-24
申请人： APPLIED MATERIALS, INC. , THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人： HUNG, Raymond , KIM, Namsung , NEMANI, Srinivas , YIEH, Ellie , CHOI, Jong , AHLES, Christopher , KUMMEL, Andrew
IPC分类号： H01L21/02 , H01L21/324
摘要： Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.

2. 发明申请

WO2019013949A1 SELECTIVE OXIDATION FOR FABRICATING NANOWIRES FOR SEMICONDUCTOR APPLICATIONS 审中-公开
公开(公告)号：WO2019013949A1
公开(公告)日：2019-01-17
申请号：PCT/US2018/038822
申请日：2018-06-21
申请人： APPLIED MATERIALS, INC.
发明人： WONG, Keith Tatseun , SUN, Shiyu , KANG, Sean S. , KIM, Nam Sung , NEMANI, Srinivas , YIEH, Ellie
IPC分类号： H01L21/02 , H01L29/06 , H01L21/768
摘要： The present disclosure provide methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes supplying an oxygen containing gas mixture to a multi-material layer on a substrate in a processing chamber, wherein the multi-material layer includes repeating pairs of a first layer and a second layer, the first and the second layers having a first group and a second group of sidewalls respectively exposed through openings defined in the multi-material layer, maintaining a process pressure at greater than 5 bar, and selectively forming an oxidation layer on the second group of sidewalls in the second layer.

3. 发明申请

WO2018005122A1 SELECTIVE ETCH USING MATERIAL MODIFICATION AND RF PULSING 审中-公开
标题翻译：选择性蚀刻采用材料改性和射频脉冲
公开(公告)号：WO2018005122A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/037820
申请日：2017-06-16
申请人： APPLIED MATERIALS, INC.
发明人： CITLA, Bhargav , YING, Chentsau , NEMANI, Srinivas , BABYAN, Viachslav , STOWELL, Michael
IPC分类号： H01L21/3065 , H01J37/32 , H05H1/46
摘要： Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the semiconductor substrate. The low-power plasma may be a radio-frequency ("RF") plasma, which may be at least partially formed by an RF bias power operating between about 10 W and about 100 W in embodiments. The RF bias power may also be pulsed at a frequency below about 5,000 Hz. The methods may also include etching one of the at least two exposed materials on the surface of the semiconductor substrate at a higher etch rate than a second of the at least two exposed materials on the surface of the semiconductor substrate.
摘要翻译：半导体系统和方法可以包括执行包括修改半导体衬底上的材料的选择性蚀刻的方法。衬底可以在半导体衬底的表面上具有至少两个暴露的材料。该方法可以包括在容纳半导体衬底的处理室内形成低功率等离子体。低功率等离子体可以是射频（“RF”）等离子体，其在实施例中可以至少部分地由在约10W和约100W之间操作的RF偏压功率形成。 RF偏置功率也可以在低于大约5,000Hz的频率下脉动。该方法还可以包括以比半导体衬底表面上的至少两种暴露材料中的第二种更高的蚀刻速率蚀刻半导体衬底的表面上的至少两种暴露材料中的一种。

4. 发明申请

WO2020033081A1 GAS ABATEMENT APPARATUS 审中-公开
公开(公告)号：WO2020033081A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/040195
申请日：2019-07-01
申请人： APPLIED MATERIALS, INC.
发明人： KHAN, Adib , LIANG, Qiwei , MALIK, Sultan , NEMANI, Srinivas , SMATI, Rafika , NG, Joseph , O'HEHIR, John
IPC分类号： H01L21/67
摘要： Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

5. 发明申请

WO2019236260A1 SELECTIVE OXIDATION FOR 3D DEVICE ISOLATION 审中-公开
公开(公告)号：WO2019236260A1
公开(公告)日：2019-12-12
申请号：PCT/US2019/032609
申请日：2019-05-16
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Shiyu , WONG, Keith Tatseun , LESCHKIES, Kurtis , KIM, Namsung , NEMANI, Srinivas
IPC分类号： H01L29/66 , H01L29/78 , H01L29/423 , H01L21/8234 , H01L21/768 , H01L21/311
摘要： Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the layers of the superlattice structure is oxidized by a high pressure oxidation process to form a buried oxide layer adjacent the substrate.

6. 发明申请

WO2016149541A1 PULSED PLASMA FOR FILM DEPOSITION 审中-公开
标题翻译：脉冲沉积的脉冲等离子体
公开(公告)号：WO2016149541A1
公开(公告)日：2016-09-22
申请号：PCT/US2016/022952
申请日：2016-03-17
申请人： APPLIED MATERIALS, INC.
发明人： XUE, Jun , GODET, Ludovic , NEMANI, Srinivas , STOWELL, Michael, W. , LIANG, Qiwei , BUCHBERGER, Douglas, A., Jr.
IPC分类号： C23C16/44 , C23C16/513 , C23C16/515
CPC分类号： H01L21/02274 , H01L21/0217 , H01L21/02329 , H01L21/0234 , H01L21/76826 , H01L21/76829 , H01L21/76831
摘要： Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理设置在处理室中的衬底的方法包括：（a）通过将衬底暴露于从远程等离子体源产生的第一反应物质和第一前体而在衬底上沉积材料层，其中第一活性物质与第一前体反应; 和（b）通过将衬底暴露于处理室内从等离子体源产生的等离子体处理所有或基本上全部沉积的材料层; 其中所述远程等离子体源或所述第二等离子体源中的至少一个被脉冲以控制沉积周期和处理周期。

7. 发明申请

WO2015094596A1 SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION 审中-公开
标题翻译：半导体系统组装和操作方法
公开(公告)号：WO2015094596A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/067135
申请日：2014-11-24
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Andrew , RAMASWAMY, Kartik , NEMANI, Srinivas , HOWARD, Bradley , VISHWANATH, Yogananda Sarode
IPC分类号： H01L21/67
CPC分类号： H01J37/32651 , H01J37/32091 , H01J37/32174 , H01J37/32357 , H01J37/32449 , H01J37/32541 , H01J37/32568 , H01J37/32577
摘要： An exemplary semiconductor processing system may include a high-frequency electrical source that has an outlet plug. The system may include a processing chamber having a top plate, and an inlet assembly coupled with the top plate. The inlet assembly may include an electrode defining an aperture at a first end and configured to receive the outlet plug. The aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The inlet assembly may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.
摘要翻译：示例性的半导体处理系统可以包括具有出口插头的高频电源。该系统可以包括具有顶板的处理室和与顶板联接的入口组件。入口组件可以包括在第一端限定孔并且被配置为接收出口塞的电极。孔可以在第一端被表征为第一直径，并且与第一端相对的孔的第二端的特征在于小于第一直径的第二直径。入口组件还可包括与顶板耦合的入口绝缘体并且构造成使顶板与电极电绝缘。

8. 发明申请

WO2015050707A1 A METHOD AND SYSTEM FOR THREE-DIMENSIONAL (3D) STRUCTURE FILL 审中-公开
标题翻译：一种用于三维（3D）结构填充的方法和系统
公开(公告)号：WO2015050707A1
公开(公告)日：2015-04-09
申请号：PCT/US2014/056095
申请日：2014-09-17
申请人： APPLIED MATERIALS, INC.
发明人： YIEH, Ellie , GODET, Ludovic , NEMANI, Srinivas , PING, Er-Xuan , DICKERSON, Gary
IPC分类号： H01L21/20 , H01L21/3065 , H01L21/60
CPC分类号： H01L21/02271 , C23C14/021 , C23C14/046 , C23C16/0227 , C23C16/045 , C23C16/45544 , C23C16/50 , H01J37/32009 , H01J2237/334 , H01L21/02266 , H01L21/02274 , H01L21/0228 , H01L21/02315 , H01L21/2855 , H01L21/28556 , H01L21/31116 , H01L21/32136 , H01L21/67017 , H01L21/67213 , H01L21/76224
摘要： Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.
摘要翻译：实施例包括3D结构填充的方法和系统。在一个实施例中，在晶片中填充沟槽的方法包括使用离子束相对于沟槽的侧壁以一定角度执行定向等离子体处理，以形成侧壁的处理部分和沟槽的未处理底部。材料沉积在沟槽中。材料在侧壁的处理部分上的沉积速率不同于沟槽的未处理底部上的第二沉积速率。在一个实施例中，一种方法包括在晶片上沉积材料，填充沟槽的底部并在沟槽的侧壁上形成层，以及邻近沟槽的顶表面。该方法包括用相对于侧壁成一定角度的离子束蚀刻该层。

9. 发明申请

WO2015038303A1 METHOD OF DEPOSITING THIN METAL-ORGANIC FILMS 审中-公开
标题翻译：沉积薄金属有机膜的方法
公开(公告)号：WO2015038303A1
公开(公告)日：2015-03-19
申请号：PCT/US2014/051930
申请日：2014-08-20
申请人： APPLIED MATERIALS, INC.
发明人： NEMANI, Srinivas , YIEH, Ellie , LUBOMIRSKY, Dmitry
IPC分类号： C23C16/44 , C23C16/458 , H01L21/205
CPC分类号： B05D1/02 , B05C5/0291 , B05D3/067 , C23C18/06 , C23C18/1216 , C23C18/1245 , C23C18/125 , C23C18/1283 , C23C18/14 , H01L21/02178 , H01L21/02288 , H01L21/0332 , H01L21/6715
摘要： Embodiments include systems, apparatuses, and methods of thin metal-organic film deposition with inkjet printheads. A method of depositing a metal-organic thin film over a substrate includes introducing chemical precursors into one or more piezoelectric printheads. The chemical precursors including a metallic compound and a reactive liquid or gas. The method further includes dispensing droplets or a stream of the chemical precursors with the piezoelectric printheads onto a surface of the substrate supported by a stage in a vacuum chamber.
摘要翻译：实施例包括用喷墨打印头薄金属 - 有机膜沉积的系统，装置和方法。在衬底上沉积金属 - 有机薄膜的方法包括将化学前体引入到一个或多个压电打印头中。化学前体包括金属化合物和反应性液体或气体。该方法还包括将液滴或化学前体物流与压电打印头分配到由真空室中的载物台支撑的基底表面上。

10. 发明申请

WO2015020760A1 THREE-DIMENSIONAL (3D) PROCESSING AND PRINTING WITH PLASMA SOURCES 审中-公开
标题翻译：三维（3D）处理和印刷等离子体源
公开(公告)号：WO2015020760A1
公开(公告)日：2015-02-12
申请号：PCT/US2014/046530
申请日：2014-07-14
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , DETRICK, Troy , NEMANI, Srinivas , JOSHI, Ajey
IPC分类号： H05H1/46 , C23C16/50 , H01L21/205
CPC分类号： B28B1/001 , B22F3/1055 , B22F2003/1056 , B22F2999/00 , C23C16/513 , C23C26/02 , Y02P10/295 , B22F2202/13
摘要： Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.
摘要翻译：实施例包括三维等离子体印刷或处理的系统，装置和方法。在一个实施例中，一种方法包括将化学前体引入一个或多个点等离子体源中，在具有一个或多个电源的化学前体的一个或多个点等离子体源中产生等离子体，以及将设置在舞台上的衬底通过相对于一个或多个点等离子体源移动台来产生等离子体。

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