专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2017032404A1 APPARATUS FOR VACUUM SPUTTER DEPOSITION AND METHOD THEREFOR 审中-公开
标题翻译：真空溅射沉积装置及其方法
公开(公告)号：WO2017032404A1
公开(公告)日：2017-03-02
申请号：PCT/EP2015/069364
申请日：2015-08-24
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , GEBELE, Thomas , LEIPNITZ, Thomas
发明人： SEVERIN, Daniel , GEBELE, Thomas , LEIPNITZ, Thomas
IPC分类号： H01J37/32 , H01J37/34 , F23N5/24 , C23C14/00 , C23C14/34 , F23M11/00
CPC分类号： H01J37/32844 , C23C14/0063 , C23C14/3464 , H01J37/32449 , H01J37/32834 , H01J37/3405 , H01J37/3473 , Y02C20/30
摘要： An apparatus (100) for vacuum sputter deposition is described. The apparatus includes a vacuum chamber (110); three or more sputter cathodes within the vacuum chamber (110) for sputtering material on a substrate (200); a gas distribution system (130) for providing a processing gas including H 2 to the vacuum chamber (110); a vacuum system (140) for providing a vacuum inside the vacuum chamber (110); and a safety arrangement (160) for reducing the risk of an oxy-hydrogen explosion, wherein the safety arrangement (160) comprises a dilution gas feeding unit (165) connected to the vacuum system (160) for dilution of the H 2 -content of the processing gas (111).
摘要翻译：描述了用于真空溅射沉积的设备（100）。该装置包括一个真空室（110）; 用于在衬底（200）上溅射材料的真空室（110）内的三个或更多个溅射阴极; 用于向真空室（110）提供包括H2的处理气体的气体分配系统（130）; 用于在真空室（110）内提供真空的真空系统（140）; 以及用于降低氢氧爆炸危险的安全装置（160），其中所述安全装置（160）包括连接到所述真空系统（160）的稀释气体供给单元（165），用于稀释所述H 2 - 处理气体（111）。

2. 发明申请

WO2016095975A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE WITH A MOVABLE SPUTTER ASSEMBLY AND CONTROL OVER PROCESS GAS PARAMETERS 审中-公开
标题翻译：用可移动的喷射器组件涂覆基板和控制过程气体参数的装置和方法
公开(公告)号：WO2016095975A1
公开(公告)日：2016-06-23
申请号：PCT/EP2014/078056
申请日：2014-12-16
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , BENDER, Marcus , HANIKA, Markus , LINDENBERG, Ralph
发明人： SEVERIN, Daniel , BENDER, Marcus , HANIKA, Markus , LINDENBERG, Ralph
IPC分类号： C23C14/50 , C23C14/34 , C23C14/35 , C23C14/56 , C23C14/54 , H01J37/34 , C23C14/00 , H01J37/32
CPC分类号： C23C14/562 , C23C14/0063 , C23C14/3492 , C23C14/352 , C23C14/54 , C23C14/542 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/347
摘要： According to embodiments, an apparatus and a method for coating a substrate are provided. The apparatus includes a vacuum process chamber. The vacuum process chamber includes a gas inlet assembly and a sputter assembly. The gas inlet assembly includes at least one connector for connecting to one or more process gas sources. The sputter assembly includes a sputter source. The sputter assembly is movable in the vacuum process chamber. The apparatus further includes a controller. The controller is configured for controlling, in dependence of a current position of the sputter source in the vacuum process chamber, at least one of: a flow of a process gas introduced through the gas inlet assembly into the vacuum process chamber, a composition of the process gas introduced through the gas inlet assembly into the vacuum process chamber, and a distribution of the process gas introduced through the gas inlet assembly into the vacuum process chamber. The controller may additionally or alternatively be configured for controlling a gas flow pumped out of the vacuum process chamber.
摘要翻译：根据实施例，提供了一种用于涂覆基板的装置和方法。该装置包括真空处理室。真空处理室包括气体入口组件和溅射组件。气体入口组件包括用于连接到一个或多个处理气体源的至少一个连接器。溅射组件包括溅射源。溅射组件可在真空处理室中移动。该装置还包括控制器。控制器被配置为根据真空处理室中的溅射源的当前位置来控制以下中的至少一个：通过气体入口组件引入真空处理室的工艺气体的流动，通过气体入口组件引入真空处理室的工艺气体，以及通过气体入口组件引入到真空处理室中的工艺气体的分布。控制器可以附加地或替代地被配置为用于控制从真空处理室抽出的气流。

3. 发明申请

WO2015172835A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE BY ROTARY TARGET ASSEMBLIES IN TWO COATING REGIONS 审中-公开
标题翻译：用于通过两个涂层区域中的旋转靶组件涂覆基板的装置和方法
公开(公告)号：WO2015172835A1
公开(公告)日：2015-11-19
申请号：PCT/EP2014/059975
申请日：2014-05-15
申请人： APPLIED MATERIALS, INC. , BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
发明人： BENDER, Marcus , PIERALISI, Fabio , SCHEER, Evelyn , SEVERIN, Daniel , GÄRTNER, Harald , LINDENBERG, Ralph
IPC分类号： C23C14/22 , C23C14/35 , C23C14/56 , H01J37/34
CPC分类号： C23C14/225 , C23C14/352 , C23C14/568 , H01J37/32733 , H01J37/3405 , H01J37/3417 , H01J37/3429 , H01J37/345 , H01J37/3452
摘要： According to an embodiment, a sputter deposition apparatus for coating a substrate is provided. The sputter deposition apparatus has two or more coating regions for coating the substrate. The sputter deposition apparatus includes a first substrate guiding system for guiding the substrate in a first coating region, wherein the first substrate guiding system defines a first substrate transport direction. The sputter deposition apparatus further includes a second substrate guiding system for guiding the substrate in a second coating region, the second substrate guiding system defining a second substrate transport direction. The second substrate transport direction is the same direction as the first substrate transport direction or is different from the first substrate transport direction. The sputter deposition apparatus further includes a first cathode assembly adapted for generating one or more plasma regions in the first coating region, a second cathode assembly adapted for generating one or more plasma regions in the first coating region, a third cathode assembly adapted for generating one or more plasma regions in the second coating region, and a fourth cathode assembly adapted for generating one or more plasma regions in the second coating region. The first cathode assembly includes: a first rotary target assembly adapted for rotating a target material around a first rotation axis; and a first magnet assembly fixedly positioned in the first rotary target assembly, the first magnet assembly having a first principal plane forming a first angle with a first reference plane which contains the first rotation axis and is perpendicular to the first substrate transport direction. The second cathode assembly includes: a second rotary target assembly adapted for rotating a target material around a second rotation axis; and a second magnet assembly fixedly positioned in the second rotary target assembly, the second magnet assembly having a second principal plane, the second principal plane being parallel to the first principal plane. The third cathode assembly includes: a third rotary target assembly adapted for rotating a target material around a third rotation axis; and a third magnet assembly fixedly positioned in the third rotary target assembly, the third magnet assembly having a third principal plane forming a second angle with a second reference plane which contains the third rotation axis and is perpendicular to the second substrate transport direction, wherein the second angle is different from the first angle. The fourth cathode assembly includes: a fourth rotary target assembly adapted for rotating a target material around a fourth rotation axis; and a fourth magnet assembly fixedly positioned in the fourth rotary target assembly, the fourth magnet assembly having a fourth principal plane, the fourth principal plane being parallel to the third principal plane.
摘要翻译：根据实施例，提供了一种用于涂覆基板的溅射沉积设备。溅射沉积装置具有用于涂覆基板的两个或更多个涂覆区域。溅射沉积设备包括用于在第一涂覆区域中引导衬底的第一衬底引导系统，其中第一衬底引导系统限定第一衬底输送方向。溅射沉积设备还包括用于在第二涂覆区域中引导衬底的第二衬底引导系统，第二衬底引导系统限定第二衬底输送方向。第二基板输送方向与第一基板输送方向相同，也可以不同于第一基板输送方向。溅射沉积设备还包括适于在第一涂覆区域中产生一个或多个等离子体区域的第一阴极组件，适于在第一涂覆区域中产生一个或多个等离子体区域的第二阴极组件，适于产生一个或更多的等离子体区域，以及适于在第二涂覆区域中产生一个或多个等离子体区域的第四阴极组件。第一阴极组件包括：适于围绕第一旋转轴线旋转目标材料的第一旋转靶组件; 以及固定地定位在所述第一旋转靶组件中的第一磁体组件，所述第一磁体组件具有与包含所述第一旋转轴线且垂直于所述第一衬底输送方向的第一参考平面形成第一角度的第一主平面。第二阴极组件包括：适于围绕第二旋转轴线转动目标材料的第二旋转靶组件; 以及固定地定位在所述第二旋转靶组件中的第二磁体组件，所述第二磁体组件具有第二主平面，所述第二主平面平行于所述第一主平面。第三阴极组件包括：适于围绕第三旋转轴线转动目标材料的第三旋转靶组件; 以及固定地定位在所述第三旋转靶组件中的第三磁体组件，所述第三磁体组件具有第三主平面，所述第三主平面与包含所述第三旋转轴线且垂直于所述第二基板输送方向的第二参考平面形成第二角度，其中，第二角度与第一角度不同。第四阴极组件包括：适于围绕第四旋转轴线旋转目标材料的第四旋转靶组件; 以及固定地定位在所述第四旋转靶组件中的第四磁体组件，所述第四磁体组件具有第四主平面，所述第四主平面平行于所述第三主平面。

4. 发明申请

WO2020030264A1 A SPUTTERING DEVICE, A DEPOSITION APPARATUS, AND A METHOD OF OPERATING A SPUTTERING DEVICE 审中-公开
公开(公告)号：WO2020030264A1
公开(公告)日：2020-02-13
申请号：PCT/EP2018/071525
申请日：2018-08-08
申请人： APPLIED MATERIALS, INC. , ZILBAUER, Thomas Werner , BERGMANN, Tobias , SCHÄFER-KOPYTTO, Daniel , SEVERIN, Daniel
发明人： ZILBAUER, Thomas Werner , BERGMANN, Tobias , SCHÄFER-KOPYTTO, Daniel , SEVERIN, Daniel
IPC分类号： H01J37/34 , C23C14/35
摘要： A sputtering device is described. The sputtering device includes a cathode arrangement being cantilevered and comprising a target tube, the cathode arrangement extending along an axial direction and having a first side being a supported side and a second side being an unsupported side; and a dark space shield provided at the second side and at least partially covering the cathode arrangement, the dark space shield providing an overlap region at which the dark space shield overlaps with the target tube along the axial direction.

5. 发明申请

WO2016180447A1 METHOD OF MANUFACTURING A LAYER FOR DISPLAY MANUFACTURING USING HYDROGEN AND APPARATUS THEREFORE 审中-公开
标题翻译：使用氢气和装置制造显示器制造层的方法
公开(公告)号：WO2016180447A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060232
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
发明人： SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , BENDER, Marcus
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54
CPC分类号： C23C14/083 , C23C14/3492 , C23C14/54
摘要： A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes sputtering a transparent conductive oxide layer from an indium oxide containing target in a processing gas atmosphere. The processing gas atmosphere includes H 2 , O 2 , and an inert gas, wherein the content of H 2 is from 2.2% to 20.0%, the content of O 2 is from 0.5% to 15.0%, and the content of inert gas is from 65.0% to 97.3 %. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system and configured to execute a program code for conducting the method.
摘要翻译：因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。该方法包括在处理气体气氛中从含氧化铟的靶溅射透明导电氧化物层。处理气体气氛包括H 2，O 2和惰性气体，其中H 2的含量为2.2％至20.0％，O 2的含量为0.5％至15.0％，惰性气体的含量为65.0％至 97.3％。设备（200）包括真空室（210）; 在真空室内的一个或多个含氧化铟的靶（220a，220b）用于溅射透明导电氧化物层; 气体分配系统（230），用于在所述真空室内提供处理气体; 以及连接到所述气体分配系统并被配置为执行用于执行所述方法的程序代码的控制器（240）。

6. 发明申请

WO2016095976A1 APPARATUS AND METHOD FOR COATING A SUBSTRATE WITH A MOVABLE SPUTTER ASSEMBLY AND CONTROL OVER POWER PARAMETERS 审中-公开
标题翻译：用于将可移动的飞溅器组件涂覆在基板上的控制装置和方法
公开(公告)号：WO2016095976A1
公开(公告)日：2016-06-23
申请号：PCT/EP2014/078057
申请日：2014-12-16
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , HANIKA, Markus , BENDER, Marcus , LINDENBERG, Ralph
发明人： SEVERIN, Daniel , HANIKA, Markus , BENDER, Marcus , LINDENBERG, Ralph
IPC分类号： C23C14/50 , C23C14/34 , C23C14/35 , C23C14/56 , C23C14/54 , H01J37/34 , C23C14/00 , H01J37/32
CPC分类号： C23C14/3492 , C23C14/0063 , C23C14/352 , C23C14/54 , C23C14/542 , C23C14/562 , H01J37/32733 , H01J37/3405 , H01J37/3417 , H01J37/3444 , H01J37/3447 , H01J37/347
摘要： According to embodiments, an apparatus and a method for coating a substrate in a vacuum process chamber are provided. The method includes sputtering a sputter material from a sputter source while a first power is applied to the sputter source, wherein the sputter source is located in a first position relative to the substrate. The method includes moving the sputter source in a translational movement relative to the vacuum chamber while sputtering. The method further includes sputtering the sputter material from the sputter source while a second power is applied to the sputter source, wherein the sputter source is located in a second position relative to the substrate.
摘要翻译：根据实施例，提供了一种用于在真空处理室中涂覆基板的装置和方法。该方法包括在将第一功率施加到溅射源的同时从溅射源溅射溅射材料，其中溅射源位于相对于衬底的第一位置。该方法包括在溅射时相对于真空室的平移运动移动溅射源。该方法还包括在溅射源施加第二功率的同时从溅射源溅射溅射材料，其中溅射源相对于衬底位于第二位置。

7. 发明申请

WO2016180448A1 METHOD OF MANUFACTURING A LAYER STACK FOR DISPLAY MANUFACTURING AND APPARATUS THEREFORE 审中-公开
标题翻译：制造用于显示器制造的层叠体的方法及其装置
公开(公告)号：WO2016180448A1
公开(公告)日：2016-11-17
申请号：PCT/EP2015/060233
申请日：2015-05-08
申请人： APPLIED MATERIALS, INC. , SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , TSAI, Pipi , LIN, Wan-Yu
发明人： SEVERIN, Daniel , KLÖPPEL, Andreas , HANIKA, Markus , TSAI, Pipi , LIN, Wan-Yu
IPC分类号： C23C14/08 , C23C14/34 , C23C14/54 , C23C14/58
CPC分类号： C23C14/086 , C23C14/3492 , C23C14/54 , C23C14/5873
摘要： A method of manufacturing a layer for a plurality of thin film transistors for display manufacturing and an apparatus therefore is described. The method includes depositing (101) a layer stack onto a substrate by sputtering a first layer with a first set of processing parameters from an indium oxide containing target; sputtering a second set of processing parameters different from the first set of processing parameters onto the first layer from an indium oxide containing target a second layer with, and patterning (102) the layer stack by etching. The apparatus (200) includes a vacuum chamber (210); one or more indium oxide containing targets (220a, 220b) within the vacuum chamber for sputtering a transparent conductive oxide layer; a gas distribution system (230) for providing a processing gas within the vacuum chamber; and a controller (240) connected to the gas distribution system (230) and configured to execute a program code for conducting the method.
摘要翻译：因此，制造用于显示制造的多个薄膜晶体管的层的方法和装置。该方法包括通过用来自含氧化铟的目标物体的第一组处理参数溅射第一层而将层堆叠沉积（101）到衬底上; 将不同于第一组处理参数的第二组处理参数从含有氧化铟的靶溅射到第一层上的第二层，并通过蚀刻图案化（102）层叠层。装置（200）包括真空室（210）; 一个或多个含氧化铟的靶（220a，220b），用于溅射透明导电氧化物层; 气体分配系统（230），用于在真空室内提供处理气体; 以及连接到气体分配系统（230）并被配置为执行用于执行该方法的程序代码的控制器（240）。

8. 发明申请

WO2015158391A1 EDGE UNIFORMITY IMPROVEMENT IN PVD ARRAY COATERS 审中-公开
标题翻译： PVD阵列涂层的边缘均匀性改进
公开(公告)号：WO2015158391A1
公开(公告)日：2015-10-22
申请号：PCT/EP2014/057920
申请日：2014-04-17
申请人： APPLIED MATERIALS, INC. , SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
发明人： SCHEER, Evelyn , BENDER, Marcus , PIERALISI, Fabio , SEVERIN, Daniel , LINDENBERG, Ralph , GÄRTNER, Harald
IPC分类号： H01J37/34 , H01J37/32 , C23C14/00
CPC分类号： H01J37/347 , C23C14/352 , C23C14/542 , C23C14/568 , H01J37/32385 , H01J37/32449 , H01J37/3405 , H01J37/3417 , H01J37/3464
摘要： An apparatus for deposition of material on a substrate is described. The apparatus includes a deposition array (222) having three or more cathodes (122), wherein the deposition array comprises a first outer deposition assembly (301) comprising at least a first cathode of the three or more cathodes; a second outer deposition assembly (302) opposing the first outer deposition assembly comprising at least a second cathode of the three or more cathodes, and an inner deposition assembly (303) comprising at least one inner cathode located between the first outer deposition assembly and the second outer deposition assembly. At least one of the first outer deposition assembly (301) and the second outer deposition assembly (302) is configured for depositing the material at a higher rate than the inner deposition assembly (303) on the same substrate during the same time.
摘要翻译：描述了用于在衬底上沉积材料的装置。该装置包括具有三个或更多个阴极（122）的沉积阵列（222），其中沉积阵列包括包含三个或更多个阴极的至少第一阴极的第一外部沉积组件（301）与第一外部沉积组件相对的第二外部沉积组件（302），其包括三个或更多个阴极的至少第二阴极，以及内部沉积组件（303），其包括位于第一外部沉积组件和第二外部沉积组件之间的至少一个内部阴极第二外部沉积组件。第一外部沉积组件（301）和第二外部沉积组件（302）中的至少一个被配置用于在相同的时间内以比内部沉积组件（303）更高的速率沉积材料。

9. 发明申请

WO2013123225A1 PASSIVATION FILM STACK FOR SILICON-BASED SOLAR CELLS 审中-公开
标题翻译：用于硅基太阳能电池的钝化膜片
公开(公告)号：WO2013123225A1
公开(公告)日：2013-08-22
申请号：PCT/US2013/026185
申请日：2013-02-14
申请人： APPLIED MATERIALS, INC. , MUNGEKAR, Hemant, P. , ZHANG, Lin , SEVERIN, Daniel
发明人： MUNGEKAR, Hemant, P. , ZHANG, Lin , SEVERIN, Daniel
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1868 , H01L31/02167 , Y02E10/50 , Y02P70/521
摘要： Methods of forming a passivation film stack on a surface of a silicon-based substrate are provided. In one embodiment, the passivation film stack includes a silicon nitride layer and an aluminum oxide layer disposed between the silicon nitride layer and the silicon-based substrate. The aluminum oxide layer is deposited such that the aluminum oxide layer has a low hydrogen (H) content less than about 17 atomic% and a mass density greater than about 2.5 g/cm 3 . The silicon nitride layer is deposited on the aluminum oxide layer such that the silicon nitride layer has a low hydrogen (H) content less than about 5 atomic%, and a mass density greater than about 2.7g/cm 3 . Reduced amount of hydrogen content in the aluminum oxide layer and the silicon nitride layer prevents gas bubbles from forming in the layers and at the interface of the passivation film stack that cause the film stack to blister.
摘要翻译：提供了在硅基基板的表面上形成钝化膜堆叠的方法。在一个实施例中，钝化膜堆叠包括氮化硅层和设置在氮化硅层和硅基衬底之间的氧化铝层。沉积氧化铝层使得氧化铝层具有低于约17原子％的低氢（H）含量和大于约2.5g / cm 3的质量密度。氮化硅层沉积在氧化铝层上，使得氮化硅层的氢（H）含量低于约5原子％，质量密度大于约2.7g / cm3。氧化铝层和氮化硅层中的氢含量的降低可以防止在钝化膜堆叠的层内和界面处形成气泡，导致膜堆叠起泡。

10. 发明申请

WO2009133076A3 SPUTTER TARGET 审中-公开
公开(公告)号：WO2009133076A3
公开(公告)日：2009-11-05
申请号：PCT/EP2009/055075
申请日：2009-04-27
申请人： APPLIED MATERIALS INC., A CORPORATION OF THE STATE OF DELAWARE , MUELLER, Joachim , SEVERIN, Daniel , KREß, Markus
发明人： MUELLER, Joachim , SEVERIN, Daniel , KREß, Markus
IPC分类号： C23C14/34 , C23C14/00
摘要： In the present invention a sub-stoichiometric ceramic ZnO x : Al target, with 0.3 2 atmosphere. The diagram depicts the deposition rate R depending on the oxygen flow in a sputtering process according to the present invention compared with a conventional sputter process using a stoichiometric ZnO target. The upper line x

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式