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1. 发明申请

WO2005036615A3 APPARATUS TO IMPROVE WAFER TEMPERATURE UNIFORMITY FOR FACE-UP WET PROCESSING 审中-公开
公开(公告)号：WO2005036615A3
公开(公告)日：2005-04-21
申请号：PCT/US2004/032879
申请日：2004-10-05
申请人： APPLIED MATERIALS, INC. , PANCHAM , Ian, A. , NGUYEN, Son, T. , ROSEN, Gary, J.
发明人： PANCHAM , Ian, A. , NGUYEN, Son, T. , ROSEN, Gary, J.
IPC分类号： H01L21/00
摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid diffusion member and contacts the backside of the substrate, thus heating the substrate. The heated fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side of the substrate.

2. 发明申请

WO2009085709A1 APPARATUS AND METHOD FOR CONTROLLING EDGE PERFORMANCE IN AN INDUCTIVELY COUPLED PLASMA CHAMBER 审中-公开
标题翻译：用于控制电感耦合等离子体室的边缘性能的装置和方法
公开(公告)号：WO2009085709A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/086885
申请日：2008-12-15
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A. , MARK, Michael, J.
发明人： LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A. , MARK, Michael, J.
IPC分类号： H01L21/3065 , H05H1/34
CPC分类号： H01L21/68742 , H01J37/321 , H01J37/32623 , H01L21/67069 , H01L21/68735
摘要： The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
摘要翻译：本发明总体上提供了用于在处理过程中控制边缘性能的方法和装置。本发明的一个实施例提供了一种装置，其包括限定处理体积的室主体，被配置为将处理气体流入处理体积的气体入口以及设置在处理体积中的支撑基座。支撑基座包括具有基板支撑表面的顶板，该基板支撑表面被配置为在背面上接收和支撑基板;以及边缘表面，其构造成沿着基板的外边缘围绕基板，并且在该基板支撑表面的顶表面之间的高度差基板和边缘表面用于控制基板的边缘区域对处理气体的曝光。

3. 发明申请

WO2004094702A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/012012
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , ELLWANGER, Russell, C. , YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

4. 发明申请

WO2010123877A2 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A2
公开(公告)日：2010-10-28
申请号：PCT/US2010/031723
申请日：2010-04-20
申请人： APPLIED MATERIALS, INC. , TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
发明人： TRAN, Binh , CUI, Anqing , HWANG, Bernard, L. , NGUYEN, Son, T. , NGUYEN, Anh, N. , SEUTTER, Sean, M. , TAO, Xianzhi
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有降低的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

5. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

6. 发明申请

WO2010129292A2 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032597
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

7. 发明申请

WO2010118295A2 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030496
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

8. 发明申请

WO2009117440A1 HEATED VALVE MANIFOLD FOR AMPOULE 审中-公开
标题翻译：加热阀门用于AMPOULE
公开(公告)号：WO2009117440A1
公开(公告)日：2009-09-24
申请号：PCT/US2009/037430
申请日：2009-03-17
申请人： APPLIED MATERIALS, INC. , CHOI, Kenric , NGUYEN, Son, T.
发明人： CHOI, Kenric , NGUYEN, Son, T.
IPC分类号： H01L21/205
CPC分类号： C23C16/4481 , C23C16/45561
摘要： Embodiments of the invention provide an apparatus and a method for generating a gaseous chemical precursor that may be used in a vapor deposition processing system. In one embodiment, the apparatus contains a valve manifold assembly, which includes a valve assembly body having at least one embedded electric heater, an inlet channel passing through the valve assembly body, a first pneumatic valve and a first manual valve coupled to the valve assembly body and positioned to control fluid flow within the inlet channel, an outlet channel passing through the valve assembly body, and a second pneumatic valve and a second manual valve coupled to the valve assembly body and positioned to control fluid flow within the outlet channel. The valve manifold assembly further contains a bypass channel connected to and between the inlet and outlet channels, and containing a bypass valve positioned to control fluid flow within the bypass channel.
摘要翻译：本发明的实施方案提供了一种用于产生可用于气相沉积处理系统的气态化学前体的装置和方法。在一个实施例中，该装置包括阀歧管组件，其包括具有至少一个嵌入式电加热器的阀组件主体，穿过阀组件主体的入口通道，第一气动阀和联接到阀组件的第一手动阀并且定位成控制入口通道内的流体流动，穿过阀组件本体的出口通道，以及耦合到阀组件主体并定位成控制出口通道内的流体流动的第二气动阀和第二手动阀。阀歧管组件还包括连接到入口通道和出口通道之间并且在入口通道和出口通道之间的旁通通道，并且包含定位成控制旁通通道内的流体流动的旁通阀。

9. 发明申请

WO2009085708A1 METHOD OF CORRECTING BASELINE SKEW BY A NOVEL MOTORIZED SOURCE COIL ASSEMBLY 审中-公开
标题翻译：通过新型电动机线圈组件校正基线的方法
公开(公告)号：WO2009085708A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/086881
申请日：2008-12-15
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A.
发明人： LIU, Wei , SWENBERG, Johanes, F. , NGUYEN, Hanh, D. , NGUYEN, Son, T. , CURTIS, Roger , BOTTINI, Philip, A.
IPC分类号： H01L21/02
CPC分类号： H01J37/321 , H01J37/3211 , H01J37/32174
摘要： The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.
摘要翻译：本发明通常提供了用于调整电感耦合等离子体室中的等离子体密度分布的装置和方法。本发明的一个实施例提供一种被配置用于处理衬底的装置。该装置包括限定被配置成在其中处理衬底的处理体积的室主体和耦合到处理体积外的室主体的线圈组件，其中线圈组件包括线圈安装板，安装在线圈安装件上的第一线圈天线板和线圈调整机构，被配置为调节第一线圈天线相对于处理体积的对准。

10. 发明申请

WO2013040527A1 ANTIMICROBIAL COMPOUNDS 审中-公开
标题翻译：抗微生物化合物
公开(公告)号：WO2013040527A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/055678
申请日：2012-09-16
申请人： MICROBIOTIX, INC. , NGUYEN, Son, T. , DING, Xiaoyuan , BUTLER, Michelle, M.
发明人： NGUYEN, Son, T. , DING, Xiaoyuan , BUTLER, Michelle, M.
IPC分类号： A01N43/38 , A61K31/40 , C07D487/02
CPC分类号： A61K31/4178 , A61K31/437 , A61K31/497 , A61K31/506 , A61K45/06 , C07D403/14 , C07D405/14 , C07D409/14 , C07D471/04 , Y02A50/411 , A61K2300/00
摘要： The invention provides antimicrobial organic compounds and compositions thereof that kill or inhibit growth of cells of one or more microbial pathogens.
摘要翻译：本发明提供杀死或抑制一种或多种微生物病原体细胞生长的抗微生物有机化合物及其组合物。

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