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1. 发明公开

EP4189732A1 BATCH THERMAL PROCESS CHAMBER 审中-实审
公开(公告)号：EP4189732A1
公开(公告)日：2023-06-07
申请号：EP21853659.7
申请日：2021-07-12
申请人： Applied Materials, Inc.
发明人： TANNOUS, Adel George , CHU, Schubert S. , LAU, Shu-Kwan , SHAH, Kartik Bhupendra , ZHU, Zuoming , MORADIAN, Ala , KUMAR, Surajit , RANGAPPA, Srinivasa , CHIN, Chia Cheng , PANDEY, Vishwas Kumar
IPC分类号： H01L21/67 , H05B3/00 , H01L21/687 , C30B25/10

2. 发明公开

EP3513426A1 A DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES 审中-公开
公开(公告)号：EP3513426A1
公开(公告)日：2019-07-24
申请号：EP17851194.5
申请日：2017-01-23
申请人： Applied Materials, Inc.
发明人： BAO, Xinyu , YAN, Chun , CHUNG, Hua , CHU, Schubert S.
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/67

3. 发明申请

WO2020033097A1 LINER FOR PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2020033097A1
公开(公告)日：2020-02-13
申请号：PCT/US2019/041192
申请日：2019-07-10
申请人： APPLIED MATERIALS, INC.
发明人： CONG, Zhepeng , CHU, Schubert S. , MYO, Nyi O. , SHAH, Kartik , KUMAR, Surajit
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H01L21/02
摘要： Embodiments herein relate to chamber liners with a multi-piece design for use in processing chambers. The multi-piece design can have an inner portion and an outer portion. A portion of the inner surface of the outer portion may be designed to be in contact with the outer surface of the inner portion at a single junction point, creating a thermal barrier between the inner portion and outer portion, thus reducing heat transfer from the inner portion and outer portion. The thermal barrier creates higher temperatures at the chamber liner inner surface and therefore leads to shorter heat up times within the chamber. Additionally, the thermal barrier also creates lower temperatures near the base ring and outer surface of the outer ring, thereby protecting the chamber walls and requiring less thermal regulation/dissipation at the chamber walls.

4. 发明申请

WO2019046000A1 EPITAXY SYSTEM INTEGRATED WITH HIGH SELECTIVITY OXIDE REMOVAL AND HIGH TEMPERATURE CONTAMINANT REMOVAL 审中-公开
公开(公告)号：WO2019046000A1
公开(公告)日：2019-03-07
申请号：PCT/US2018/046497
申请日：2018-08-13
申请人： APPLIED MATERIALS, INC.
发明人： HAWRYLCHAK, Lara , LO, Kin Pong , SANCHEZ, Errol C. , CHU, Schubert S. , MANDREKAR, Tushar
IPC分类号： H01L21/67 , H05H1/46 , H01L21/677 , H01L21/683
摘要： In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

5. 发明申请

WO2018052479A1 INTEGRATED SYSTEM FOR SEMICONDUCTOR PROCESS 审中-公开
标题翻译：半导体工艺集成系统
公开(公告)号：WO2018052479A1
公开(公告)日：2018-03-22
申请号：PCT/US2017/015472
申请日：2017-01-27
申请人： APPLIED MATERIALS, INC.
发明人： BAO, Xinyu , CHUNG, Hua , CHU, Schubert S.
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/20
摘要： Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The cluster tool includes a pre-clean chamber, an etch chamber, one or more pass through chambers, one or more outgassing chambers, a first transfer chamber, a second transfer chamber, and one or more process chambers. The pre-clean chamber and the etch chamber are coupled to a first transfer chamber. The one or more pass through chambers are coupled to and disposed between the first transfer chamber and the second transfer chamber. The one or more outgassing chambers are coupled to the second transfer chamber. The one or more process chambers are coupled to the second transfer chamber.
摘要翻译：本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和设备。更具体地，本公开的实施方式一般涉及用于处理N型金属氧化物半导体（NMOS）器件的集成系统。在一个实现中，提供了用于处理衬底的群集工具。该群集工具包括预清洁腔室，蚀刻腔室，一个或多个通过腔室，一个或多个排气腔室，第一传送腔室，第二传送腔室和一个或多个处理腔室。预清洁腔室和蚀刻腔室耦合到第一传输腔室。一个或多个通过腔室联接到第一传送腔室和第二传送腔室并且设置在第一传送腔室和第二传送腔室之间。一个或多个排气室联接到第二传送室。一个或多个处理室联接到第二传送室。

6. 发明申请

WO2017209900A1 A VACUUM PLATFORM WITH PROCESS CHAMBERS FOR REMOVING CARBON CONTAMINANTS AND SURFACE OXIDE FROM SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：带有加工室的真空平台，用于从半导体基材上去除碳污染物和表面氧化物
公开(公告)号：WO2017209900A1
公开(公告)日：2017-12-07
申请号：PCT/US2017/031590
申请日：2017-05-08
申请人： APPLIED MATERIALS, INC.
发明人： LO, Kin Pong , CHU, Schubert S.
IPC分类号： H01L21/02 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/67207 , H01J37/32091 , H01J37/321 , H01J37/32357 , H01J37/32889 , H01L21/02046 , H01L21/3065 , H01L21/67184
摘要： Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.
摘要翻译：本公开的实施方式一般涉及改进的真空处理系统。在一个实施方式中，真空处理系统包括耦合到至少一个外延处理室的第一传输室，第二传输室，设置在第一传输室和第二传输室之间的过渡站，第一等离子体清洁室，耦合到用于从衬底的表面去除氧化物的第二传输室，以及耦合到第二传输室的负载锁定室。过渡站连接到第一传送室和第二传送室，并且过渡站包括第二等离子体清洁室，用于从基底表面除去含碳污染物。

7. 发明申请

WO2016122835A1 LAMP HEATING FOR PROCESS CHAMBER 审中-公开
标题翻译：灯泡加热灯
公开(公告)号：WO2016122835A1
公开(公告)日：2016-08-04
申请号：PCT/US2016/012066
申请日：2016-01-04
申请人： APPLIED MATERIALS, INC.
发明人： SAMIR, Mehmet Tugrul , CHU, Schubert S.
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H05B3/0047 , F26B3/30
摘要： A process chamber is provided including a top, a bottom, and a sidewall coupled together to define a volume. A substrate support is disposed in the volume. The process chamber further includes one or more lampheads facing the substrate support, each lamphead comprising an arrangement of lamps disposed along a plane. The arrangement of lamps is defined by a center and a plurality of concentric ring-shaped zones. Each ring-shaped zone is defined by an inner edge and an outer edge and each ring-shaped zone includes three or more alignments of one or more lamps. Each alignment of one or more lamps has a first end extending linearly to a second end that are separated by at least 10 degrees around the center. The first end and the second end are both located within one ring-shaped zone. Each alignment located within a same ring-shaped zone is equidistant to the center.
摘要翻译：提供了一种处理室，其包括联接在一起以限定体积的顶部，底部和侧壁。衬底支撑件设置在体积中。处理室还包括面向衬底支撑件的一个或多个灯头，每个灯头包括沿着平面布置的灯的布置。灯的布置由中心和多个同心环形区限定。每个环形区域由内部边缘和外部边缘限定，并且每个环形区域包括一个或多个灯具的三个或更多对准。一个或多个灯的每个对准具有线性地延伸到围绕中心分开至少10度的第二端的第一端。第一端和第二端都位于一个环形区域内。位于相同环形区域内的每个对准与中心等距。

8. 发明申请

WO2015199974A1 SUBSTRATE THERMAL CONTROL IN AN EPI CHAMBER 审中-公开
标题翻译：基板在EPI室内的热控制
公开(公告)号：WO2015199974A1
公开(公告)日：2015-12-30
申请号：PCT/US2015/034903
申请日：2015-06-09
申请人： APPLIED MATERIALS, INC.
发明人： NGO, Anhthu , CHU, Schubert S. , MYO, Nyi O. , BRILLHART, Paul , HUANG, Yi-Chiau , ZHU, Zuoming , BAUTISTA, Kevin Joseph , SHAH, Kartik , TONG, Edric , LI, Xuebin , CONG, Zhepeng , RAMACHANDRAN, Balasubramanian
IPC分类号： H01L21/683 , H01L21/324 , H01L21/20
CPC分类号： C30B25/12 , C23C16/4586
摘要： In one embodiment, a susceptor for a thermal processing chamber is provided. The susceptor includes a base having a front side and a back side made of a thermally conductive material opposite the front side, wherein the base includes a peripheral region surrounding a recessed area having a thickness that is less than a thickness of the peripheral region, and a plurality of raised features protruding from one or both of the front side and the back side.
摘要翻译：在一个实施例中，提供了用于热处理室的基座。感受体包括具有与前侧相反的导热材料制成的前侧和后侧的基部，其中，所述基部包括围绕具有小于周边区域的厚度的凹部的凹部的周边区域，以及从前侧和后侧的一个或两个突出的多个凸起特征。

9. 发明申请

WO2022031422A1 WAFER EDGE TEMPERATURE CORRECTION IN BATCH THERMAL PROCESS CHAMBER 审中-公开
公开(公告)号：WO2022031422A1
公开(公告)日：2022-02-10
申请号：PCT/US2021/042065
申请日：2021-07-16
申请人： APPLIED MATERIALS, INC.
发明人： SHAH, Kartik Bhupendra , CHU, Schubert S. , TANNOUS, Adel George , MORADIAN, Ala , MYO, Nyi O. , KUMAR, Surajit , ZHU, Zuoming , BURROWS, Brian Hayes , PANDEY, Vishwas Kumar , LAU, Shu-Kwan , RANGAPPA, Srinivasa
IPC分类号： H01L21/67 , H01L21/687 , H05B3/00
摘要： A process kit for use in a processing chamber includes an outer liner, an inner liner configured to be in fluid communication with a gas injection assembly and a gas exhaust assembly of a processing chamber, a first ring reflector disposed between the outer liner and the inner liner, a top plate and a bottom plate attached to an inner surface of the inner liner, the top plate and the bottom plate forming an enclosure together with the inner liner, a cassette disposed within the enclosure, the cassette comprising a plurality of shelves configured to retain a plurality of substrates thereon, and an edge temperature correcting element disposed between the inner liner and the first ring reflector.

10. 发明申请

WO2021167752A1 STRUCTURE AND MATERIAL ENGINEERING METHODS FOR OPTOELECTRONIC DEVICES SIGNAL TO NOISE RATIO ENHANCEMENT 审中-公开
公开(公告)号：WO2021167752A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/014916
申请日：2021-01-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Papo , CHU, Schubert S. , SANCHEZ, Errol Antonio C. , BOLAND, John Timothy , YE, Zhiyuan , WASHINGTON, Lori , TAO, Xianzhi , HUANG, Yi-Chiau , WU, Chen-Ying
IPC分类号： H01L27/146
摘要： A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

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