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1. 发明申请

WO2003023841A1 FLASH STEP PREPARATORY TO DIELECTRIC ETCH 审中-公开
标题翻译：闪电步骤准备到电介质蚀刻
公开(公告)号：WO2003023841A1
公开(公告)日：2003-03-20
申请号：PCT/US2002/028385
申请日：2002-09-05
申请人： APPLIED MATERIALS INC. (a corporation of Delaware)
发明人： WANG, Zhuxu , LIU, Jingbao , BJORKMAN, Claes, H. , PU, Bryan
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： A dielectric plasma etch method particularly useful for assuring that residue does not form in large open pad areas used for monitoring etching of narrow via and contact holes. The main dielectric etch of the via and contact holes uses a highly polymerizing chemistry, preferably of a low-F/C fluorocarbon such as C 4 F 6 in conjunction with O 2 and Ar. A short flash step precedes the main plasma etch using a plasma of a gas less polymerizing than the gas of the main etch, and the plasma is not extinguished between the flash and main steps. The flash step may be used to remove an anti-reflection coating (ARC) covering the 10 dielectric layer and use a lean fluorocarbon, such as CF 4 ' perhaps together with O 2 and Ar . In the absence of ARC, an argon flash may be used.
摘要翻译：介质等离子体蚀刻方法特别适用于确保在用于监测窄通孔和接触孔蚀刻的大开孔焊盘区域中不形成残留物。通孔和接触孔的主要电介质蚀刻使用高度聚合的化学物质，优选低F / C碳氟化合物如C 4 F 6与O 2和Ar结合。使用比主蚀刻的气体少的聚合气体的等离子体进行主等离子体蚀刻之前的短闪光步骤，并且在闪光和主要步骤之间的等离子体不会熄灭。闪光步骤可以用于除去覆盖10介电层的抗反射涂层（ARC），并且可以与O 2和Ar一起使用诸如CF 4的贫碳氟化合物。在没有ARC的情况下，可以使用氩气闪光。

2. 发明申请

WO2012112937A2 METHOD AND SYSTEM FOR WAFER LEVEL SINGULATION 审中-公开
标题翻译：用于水平层叠的方法和系统
公开(公告)号：WO2012112937A2
公开(公告)日：2012-08-23
申请号：PCT/US2012/025716
申请日：2012-02-17
申请人： Applied Materials, Inc. , SCHUEGRAF, Klaus , RAMASWAMI, Seshadri , RICE, Michael, R. , SALEK, Mohsen, S. , BJORKMAN, Claes, H.
发明人： SCHUEGRAF, Klaus , RAMASWAMI, Seshadri , RICE, Michael, R. , SALEK, Mohsen, S. , BJORKMAN, Claes, H.
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/30 , H01L21/302 , H01L21/308 , H01L21/561 , H01L21/568 , H01L21/67017 , H01L21/67207 , H01L21/6836 , H01L23/544 , H01L24/94 , H01L2221/68327 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.
摘要翻译：单片化多个半导体管芯的方法包括提供载体衬底并将半导体衬底接合到载体衬底。半导体衬底包括多个器件。该方法还包括在半导体衬底上形成掩模层，将掩模层的预定部分暴露于光，以及处理掩模层的预定部分以在半导体衬底上形成预定的掩模图案。所述方法还包括形成所述多个半导体管芯，所述多个半导体管芯中的每一个与所述预定掩模图案相关联并且包括所述多个器件中的一个或多个并且从所述载体衬底分离所述多个半导体管芯。

3. 发明申请

WO2003081645A3 AN INTEGRATED IN-SITU ETCH PROCESS PERFORMED IN A MULTICHAMBER SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2003081645A3
公开(公告)日：2003-10-02
申请号：PCT/US2003/007485
申请日：2003-03-10
申请人： APPLIED MATERIALS, INC.
发明人： HSIEH, Chang-Lin , MA, Diana, Xiaobing , SHIEH, Brian, Sy Yuan , YIN, Gerald, Zheyao , SUN, Jennifer , THACH, Senh , LUO, Lee , BJORKMAN, Claes, H.
IPC分类号： H01L21/00
摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.

4. 发明申请

WO2005097390A1 METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 审中-公开
标题翻译：用于在半导体器件制造期间传导导电片的方法和装置
公开(公告)号：WO2005097390A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/010623
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.
摘要翻译：在第一方面，提供了一种用于将导电片传送到目标衬底的电极焊盘的可编程传送装置。可编程转移装置包括（1）转移基板; 和（2）形成在转印基板上的多个可单独寻址的电极。每个电极适于在将导电片传送到目标衬底的电极焊盘的过程中选择性地吸引和保持导电片。提供了许多其他方面。

5. 发明授权

EP1737600B1 METHOD AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 有权
标题翻译：用于转移官员的方法和设备份额的半导体元件的制造
公开(公告)号：EP1737600B1
公开(公告)日：2008-08-27
申请号：EP05732259.6
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06 , H01L21/60 , H05K3/34 , H01L21/48 , H01L21/00
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

6. 发明公开

EP1737600A1 METHODS AND APPARATUS FOR TRANSFERRING CONDUCTIVE PIECES DURING SEMICONDUCTOR DEVICE FABRICATION 有权
标题翻译：用于转移官员的方法和设备份额的半导体元件的制造
公开(公告)号：EP1737600A1
公开(公告)日：2007-01-03
申请号：EP05732259.6
申请日：2005-03-31
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael, R. , BJORKMAN, Claes, H. , ZHAO, Jun , COLLINS, Kenneth, S. , MIU, Thomas
IPC分类号： B23K3/06 , H01L21/60 , H05K3/34 , H01L21/48 , H01L21/00
CPC分类号： H05K3/3478 , H01L21/4853 , H01L21/67144 , H01L21/6835 , H01L23/544 , H01L24/11 , H01L24/742 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/13099 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01051 , H01L2924/01057 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1461 , H01L2924/19041 , H01L2924/30105 , H05K2201/10212 , H05K2203/0338 , H05K2203/041 , H01L2924/00 , H01L2224/05599
摘要： In a first aspect, a programmable transfer device is provided for transferring conductive pieces to electrode pads of a target substrate. The programmable transfer device includes (1) a transfer substrate; and (2) a plurality of individually addressable electrodes formed on the transfer substrate. Each electrode is adapted to selectively attract and hold a conductive piece during transfer of the conductive piece to an electrode pad of a target substrate. Numerous other aspects are provided.

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