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1. 发明申请

WO2009111344A2 METHOD AND APPARATUS FOR REMOVING POLYMER FROM A SUBSTRATE 审中-公开
标题翻译：从基材上去除聚合物的方法和设备
公开(公告)号：WO2009111344A2
公开(公告)日：2009-09-11
申请号：PCT/US2009/035572
申请日：2009-02-27
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth , SALINAS, Martin , MERRY, Walter , YUAN, Jie , NGUYEN, Andrew , RAMASWAMY, Kartik , SUN, Jennifer , DUAN, Ren-Guan , HE, Xiaoming , FUNG, Nancy , RUI, Ying , YOUSIF, Imad , HOFFMAN, Daniel, J.
发明人： COLLINS, Kenneth , SALINAS, Martin , MERRY, Walter , YUAN, Jie , NGUYEN, Andrew , RAMASWAMY, Kartik , SUN, Jennifer , DUAN, Ren-Guan , HE, Xiaoming , FUNG, Nancy , RUI, Ying , YOUSIF, Imad , HOFFMAN, Daniel, J.
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , H01J37/32357 , H01J37/32366 , H01L21/0209
摘要： A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.
摘要翻译：提供了用于从基底去除聚合物的方法和设备。在一个实施例中，用于从衬底去除聚合物的设备包括处理室，该处理室具有限定处理空间的室壁和室盖，设置在处理室中的衬底支撑组件和连接到处理室的远程等离子体源通过形成在腔室壁内的出口端口，出口端口具有指向设置在基板支撑组件上的基板的周边区域的开口，其中远程等离子体源由耐氢物质的材料制成。

2. 发明申请

WO2012142035A2 METHOD AND APPARATUS FOR REFURBISHING GAS DISTRIBUTION PLATE SURFACES 审中-公开
标题翻译：用于改造气体分布板表面的方法和装置
公开(公告)号：WO2012142035A2
公开(公告)日：2012-10-18
申请号：PCT/US2012/032915
申请日：2012-04-10
申请人： APPLIED MATERIALS, INC. , BANDA, Sumanth , SUN, Jennifer , DUAN, Ren-Guan , GRAVES, Thomas , BOYD, Wendell Glen, Jr. , DUDLEY, Randolph William, Jr. , DOAN, Khoi , LU, William Ming-Ye
发明人： BANDA, Sumanth , SUN, Jennifer , DUAN, Ren-Guan , GRAVES, Thomas , BOYD, Wendell Glen, Jr. , DUDLEY, Randolph William, Jr. , DOAN, Khoi , LU, William Ming-Ye
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/02
CPC分类号： B24B37/042 , B08B1/04 , B24B27/033 , B24B37/107 , B24B37/245 , B24B37/26 , C23C16/4407 , Y10T137/85938 , Y10T156/11
摘要： Embodiments described herein generally relate to methods and apparatus for refurbishing a gas distribution plate assembly utilized in a deposition chamber or etch chamber. In one embodiment, a method for refurbishing a gas distribution plate assembly is provided. The method includes urging a faceplate of a gas distribution plate assembly against a polishing pad of a polishing device, the faceplate having a plurality of gas distribution holes disposed therein, providing relative motion between the faceplate and the polishing pad, and polishing the faceplate against the polishing pad.
摘要翻译：本文描述的实施例一般涉及用于翻新在沉积室或蚀刻室中使用的气体分配板组件的方法和装置。在一个实施例中，提供了一种用于翻新气体分配板组件的方法。该方法包括将气体分配板组件的面板推压到抛光装置的抛光垫上，该面板具有设置在其中的多个气体分配孔，在面板和抛光垫之间提供相对运动，并且将面板抵靠抛光垫

3. 发明申请

WO2003081645A3 AN INTEGRATED IN-SITU ETCH PROCESS PERFORMED IN A MULTICHAMBER SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：WO2003081645A3
公开(公告)日：2003-10-02
申请号：PCT/US2003/007485
申请日：2003-03-10
申请人： APPLIED MATERIALS, INC.
发明人： HSIEH, Chang-Lin , MA, Diana, Xiaobing , SHIEH, Brian, Sy Yuan , YIN, Gerald, Zheyao , SUN, Jennifer , THACH, Senh , LUO, Lee , BJORKMAN, Claes, H.
IPC分类号： H01L21/00
摘要： An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second chamber includes an interior surface that has a roughness of less than about 32 Ra. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectric layer, a barrier layer and a feature in the substrate to be contacted into the first chamber where the dielectric layer is etched in a process that encourages polymer formation over the roughened interior surface of the chamber. The substrate is then transferred from the first chamber to the second chamber under vacuum conditions and, in the second chamber, is exposed to a reactive plasma such as oxygen to strip away the photoresist mask deposited over the substrate. After the photoresist mask is stripped, the barrier layer is etched through to the feature to be contacted in the second chamber of the multichamber substrate processing system using a process that discourages polymer formation over the relatively smooth interior surface of the second chamber. All three etching steps are performed in a system level in situ process so that the substrate is not exposed to an ambient between steps. In some embodiments the interior surface of the first chamber has a roughness between 100 and 200 Ra and in other embodiments the roughness of the first chamber's interior surface is between 110 and 160 Ra.

4. 发明申请

WO2015069602A1 SMART DEVICE FABRICATION VIA PRECISION PATTERNING 审中-公开
标题翻译：智能装置制造通过精密图案
公开(公告)号：WO2015069602A1
公开(公告)日：2015-05-14
申请号：PCT/US2014/063753
申请日：2014-11-03
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Jennifer , CHEN, Yikai , KANUNGO, Biraja , FIROUZDOR, Vahid
IPC分类号： H01L21/027 , H01L27/14 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32935 , C23C4/01 , C23C4/134 , H01J37/32495 , H01J37/32522 , H01J37/32724 , H01J2237/244 , H01J2237/332 , H01J2237/334 , H01L21/67069 , H05B1/0233 , H05B3/265 , H05B2203/013
摘要： Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.
摘要翻译：实施例涉及通过精密图案化的半导体加工工具的智能装置制造。在一个实施例中，制造半导体处理工具部件的方法包括提供半导体加工工具部件的基板，图案化基板以在基板上直接形成传感器，以及在传感器上沉积顶层。传感器可以包括例如温度或应变传感器。该方法还可以包括图案化衬底以形成衬底上的一个或多个：加热器，热敏电阻和电极。在一个实施例中，该方法包括图案化部件的表面朝向半导体处理工具内部的等离子体区域。

5. 发明申请

WO2011100109A2 GAS DISTRIBUTION SHOWERHEAD WITH COATING MATERIAL FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体加工的带涂层材料的气体分配喷头
公开(公告)号：WO2011100109A2
公开(公告)日：2011-08-18
申请号：PCT/US2011/022418
申请日：2011-01-25
申请人： APPLIED MATERIALS, INC. , SUN, Jennifer , THACH, Senh , DUAN, Renguan , GRAVES, Thomas
发明人： SUN, Jennifer , THACH, Senh , DUAN, Renguan , GRAVES, Thomas
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01J37/3244 , C23C4/02 , C23C4/11 , C23C4/18
摘要： Described herein are exemplary methods and apparatuses for fabricating a gas distribution showerhead assembly in accordance with one embodiment. In one embodiment, a method includes providing a gas distribution plate having a first set of through-holes for delivering processing gases into a semiconductor processing chamber. The first set of through-holes is located on a backside of the plate (e.g., Aluminum substrate). The method includes spraying (e.g., plasma spraying) a coating material (e.g., Ytrria based material) onto a cleaned surface of the gas distribution plate. The method includes removing (e.g., surface grinding) a portion of the coating material from the surface to reduce a thickness of the coating material. The method includes forming (e.g., UV laser drilling, machining) a second set of through-holes in the coating material such that the through-holes are aligned with the first-set of through-holes.
摘要翻译：这里描述了根据一个实施例的用于制造气体分配喷头组件的示例性方法和设备。在一个实施例中，一种方法包括提供具有用于将处理气体输送到半导体处理室中的第一组通孔的气体分配板。第一组通孔位于板的背面（例如，铝基板）上。该方法包括将涂层材料（例如，基于Ytrria的材料）喷射（例如等离子喷涂）到气体分配板的清洁表面上。该方法包括从表面去除（例如，表面研磨）一部分涂层材料以减小涂层材料的厚度。该方法包括在涂层材料中形成（例如UV激光钻孔，加工）第二组通孔，使得通孔与第一组通孔对准。

6. 发明申请

WO2021178052A1 CAPACITIVE SENSOR FOR CHAMBER CONDITION MONITORING 审中-公开
公开(公告)号：WO2021178052A1
公开(公告)日：2021-09-10
申请号：PCT/US2021/013964
申请日：2021-01-19
申请人： APPLIED MATERIALS, INC.
发明人： PAN, Yaoling , TAE, Patrick John , TEDESCHI, Leonard , SUN, Jennifer , KRAUS, Philip Allan , LI, Xiaopu , BERA, Kallol , WILLWERTH, Michael D. , HICKS, Albert Barrett , ENMAN, Lisa J. , SALY, Mark Joseph , MCCORMICK, Daniel Thomas
IPC分类号： H01L21/67 , H01J37/32 , H05H1/00
摘要： Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

7. 发明申请

WO2021062349A1 ULTRATHIN CONFORMAL COATINGS FOR ELECTROSTATIC DISSIPATION IN SEMICONDUCTOR PROCESS TOOLS 审中-公开
公开(公告)号：WO2021062349A1
公开(公告)日：2021-04-01
申请号：PCT/US2020/053036
申请日：2020-09-28
申请人： APPLIED MATERIALS, INC.
发明人： NATU, Gayatri , BAJAJ, Geetika , GORADIA, Prerna , THAKARE, Darshan , FENWICK, David , HE, XiaoMing , SEPPAELAE, Sanni , SUN, Jennifer , THANU, Rajkumar , HUDGENS, Jeffrey , MUTHUKAMATCHI, Karuppasamy , DHAYALAN, Arun
IPC分类号： H01L21/687 , B25J19/00 , C23C16/06 , C23C16/455 , H01L21/677
摘要： Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

8. 发明申请

WO2013163220A1 ELECTROSTATIC CHUCK WITH ADVANCED RF AND TEMPERATURE UNIFORMITY 审中-公开
标题翻译：具有高级射频和温度均匀性的静电卡盘
公开(公告)号：WO2013163220A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037849
申请日：2013-04-23
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , SUN, Jennifer , MARKOVSKY, Mark , MAKHRATCHEV, Konstantin , BUCHBERGER, Douglas A. Jr. , BANNA, Samer
IPC分类号： H01L21/683 , H01L21/205 , H01L21/306 , C23C16/46 , H02N13/00
CPC分类号： H02N13/00 , H01L21/67103
摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
摘要翻译：描述了具有RF和温度均匀性的静电卡盘（ESCs）。例如，ESC包括顶部电介质层。上部金属部分设置在顶部电介质层的下方。第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。多个通孔设置在第三电介质层中。总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。金属基底设置在第四电介质层的下方。金属基座包括容纳在其中的多个高功率加热器元件。

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