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1. 发明公开

EP1019563A1 DUAL FREQUENCY EXCITATION OF PLASMA FOR FILM DEPOSITION 审中-公开
标题翻译：电影制作等离子体的双高频刺激
公开(公告)号：EP1019563A1
公开(公告)日：2000-07-19
申请号：EP98949780.5
申请日：1998-10-06
申请人： APPLIED KOMATSU TECHNOLOGY, INC. , Law, Kam S. , Robertson, Robert M. , Shang, Quanyuan , Olsen, Jeff , Sorensen, Carl
发明人： LAW, Kam, S. , ROBERTSON, Robert, M. , SHANG, Quanyuan , OLSEN, Jeff , SORENSEN, Carl
IPC分类号： C23C16/50 , H01J37/32
CPC分类号： H01J37/32165 , C23C16/5096 , C23C16/517
摘要： An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250 °C and 450 °C to deposit a smooth thin film onto the transparent substrate.

2. 发明申请

WO2004093198A1 METHODS TO FORM METAL LINES USING SELECTIVE ELECTROCHEMICAL DEPOSITION 审中-公开
标题翻译：使用选择性电化学沉积形成金属线的方法
公开(公告)号：WO2004093198A1
公开(公告)日：2004-10-28
申请号：PCT/US2004/011075
申请日：2004-04-09
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , WHITE, John, M. , BACHRACH, Robert, Z. , LAW, Kam, S.
发明人： SHANG, Quanyuan , WHITE, John, M. , BACHRACH, Robert, Z. , LAW, Kam, S.
IPC分类号： H01L29/49
CPC分类号： H01L29/78696 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765
摘要： Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.
摘要翻译：提供了用于形成用于有源矩阵液晶显示器（AMLCD）的晶体管的方法。在一个方面，提供了一种处理衬底的方法，包括提供玻璃衬底，在玻璃衬底的表面上沉积导电种子层，在导电种子层上沉积抗蚀剂材料，图案化抗蚀剂层以暴露部分导电种子层，以及通过电化学技术在导电种子层的暴露部分上沉积金属层。

3. 发明公开

EP1102870A1 GAS DISTRIBUTOR PLATE FOR A PROCESSING APPARATUS 审中-公开
标题翻译：气体分配板加工厂
公开(公告)号：EP1102870A1
公开(公告)日：2001-05-30
申请号：EP99933993.0
申请日：1999-07-13
申请人： APPLIED KOMATSU TECHNOLOGY, INC. , Law, Kam S.
发明人： LAW, Kam, S. , SHANG, Quanyuan , SUN, Sheng , BEER, Emanuel
IPC分类号： C23C16/44 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/4405 , G03F7/70925 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J2237/3325 , H01J2237/334 , Y10S438/905
摘要： A substrate processing system (10) includes a processing chamber (14) and a plasma source (68) located external to the chamber. A conduit (77) connects the plasma source to an interior region of the chamber to provide a reactive species to the chamber interior for cleaning interior surfaces of the chamber. A shower head (17), disposed between the plasma source and an interior region of the chamber, can serve as an electrode and also can serve as a gas distribution mechanism. The shower head includes a surface treatment, such as a non-anodized aluminum outer layer, an electro-polished surface of bare aluminum, or a fluorine-based protective outer layer. The surface-treated shower head improves the rate of removal of materials deposited on the interior surfaces of the chamber during cleaning, reduces contamination of substrates during processing, and provides more efficient use of the power source used for heating the substrate during processing.

4. 发明公开

EP1042532A1 METHOD FOR ANNEALING AN AMORPHOUS FILM USING MICROWAVE ENERGY 审中-公开
标题翻译：方法GLOW利用微波能量非晶薄膜的
公开(公告)号：EP1042532A1
公开(公告)日：2000-10-11
申请号：EP98956609.6
申请日：1998-11-03
申请人： APPLIED KOMATSU TECHNOLOGY, INC. , Law, Kam S.
发明人： LAW, Kam, S. , SHANG, Quanyuan , ROBERTSON, Robert, McCormick , TAKEHARA, Takako , WON, Taekyung , SUN, Sheng
IPC分类号： C23C16/56
CPC分类号： C23C16/56
摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator (173) disposed to provide microwaves to an area within the interior of the chamber (133). The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide (175) distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.

5. 发明申请

WO2006023579A1 METHOD FOR DEPOSITING POROUS FILMS 审中-公开
标题翻译：沉积多孔膜的方法
公开(公告)号：WO2006023579A1
公开(公告)日：2006-03-02
申请号：PCT/US2005/029281
申请日：2005-08-16
申请人： MAK, Cecilia, Y. , LAW, Kam, S.
发明人： MAK, Cecilia, Y. , LAW, Kam, S.
IPC分类号： H01L21/32 , H01L21/469
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02337 , H01L21/3124 , H01L21/31625 , H01L21/31629 , H01L21/31695 , H01L2221/1047
摘要： A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. The reagent feed stream comprises a mixture of codeposition reagents and a selective silicon removal reagent. RF power modulation is used to control the codeposition and the selective silicon removal steps with the later proceeds whenever the RF power is turned off or reduced to a low level. A porous film with highly uniform small pores and a desired porosity profile can be obtained with this method. This method is advantageous for forming a broad range of low-k dielectrics for semiconductor integrated circuit fabrication. The method is also advantageous for forming other porous films for other applications.
摘要翻译：提供了一种用于沉积多孔二氧化硅和掺杂二氧化硅膜的方法。该方法使用循环方案，其中每个循环包括首先将二氧化硅与硅共沉积，然后选择性地除去硅以形成多孔结构。在优选的实施方案中，共沉积通过等离子体增强化学气相沉积进行。试剂进料流包括共沉积试剂和选择性硅去除试剂的混合物。 RF功率调制用于控制共沉积和选择性硅去除步骤，随后RF功率关闭或降低到低电平。使用该方法可以获得具有高度均匀的小孔和所需孔隙率分布的多孔膜。该方法有利于形成用于半导体集成电路制造的宽范围的低k电介质。该方法对于形成用于其它应用的其它多孔膜也是有利的。

6. 发明公开

EP1027724A1 MODULAR SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：模块化基板处理系统
公开(公告)号：EP1027724A1
公开(公告)日：2000-08-16
申请号：EP98952210.7
申请日：1998-10-08
申请人： Applied Komatsu Technology, Inc.
发明人： WHITE, John, M. , CONNER, Robert, B. , LAW, Kam, S. , TURNER, Norman, L. , LEE, William, T. , KURITA, Shinichi
IPC分类号： H01L21/00
CPC分类号： H01L21/67167 , H01L21/67161 , H01L21/67173 , H01L21/67236 , H01L21/67721 , H01L21/67727 , H01L21/67736 , H01L21/68707
摘要： The invention provides an apparatus and method for performing a process on a substrate. At least two types of structures may be used to provide a flow path for a substrate so that the substrate may be moved from one processing or loading position to another. The first is a conveyor. The second is a track. The flow path may be a closed continuous loop. Each processing island has a valve for introduction and extraction of the substrate into and out of an interior of the island. The processing island may include load locks, and may include in conjunction therewith an inspection station, a CVD chamber, a PECVD chamber, a PVD chamber, a post-anneal chamber, a cleaning chamber, a descumming chamber, an etch chamber, or a combination of such chambers.

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