专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130055952A1 REFLECTIVE DEPOSITION RINGS AND SUBSTRATE PROCESSING CHAMBERS INCORPORTING SAME 有权
标题翻译：反射沉积环和与其同时进行的基板处理室
公开(公告)号：US20130055952A1
公开(公告)日：2013-03-07
申请号：US13598828
申请日：2012-08-30
申请人： ANANTHA K. SUBRAMANI , JOSEPH M. RANISH , XIAOXIONG YUAN , ASHISH GOEL , JOUNG JOO LEE
发明人： ANANTHA K. SUBRAMANI , JOSEPH M. RANISH , XIAOXIONG YUAN , ASHISH GOEL , JOUNG JOO LEE
IPC分类号： H01L21/461 , B23Q3/00
CPC分类号： H01L21/67115 , C23C14/541 , C23C16/481 , H01L21/67248 , H01L21/68735 , H01L21/68742
摘要： Apparatus for improving temperature uniformity across a substrate are provided herein. In some embodiments, a deposition ring for use in a substrate processing system to process a substrate may include an annular body having a first surface, an opposing second surface, and a central opening passing through the first and second surfaces, wherein the second surface is configured to be disposed over a substrate support having a support surface to support a substrate having a given width, and wherein the opening is sized to expose a predominant portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect heat energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface.
摘要翻译：本文提供了用于提高基板上的温度均匀性的装置。在一些实施例中，用于处理衬底的衬底处理系统中的沉积环可以包括具有第一表面，相对的第二表面和穿过第一表面和第二表面的中心开口的环形体，其中第二表面是被配置为设置在具有支撑表面的基板支撑件上，以支撑具有给定宽度的基板，并且其中所述开口的尺寸设定成暴露所述支撑表面的主要部分; 并且其中所述第一表面包括至少一个反射部分，所述至少一个反射部分构造成朝向所述环形体的中心轴线反射热能，其中所述至少一个反射部分的表面积为所述环形体的总表面积的约5至约50％第一个表面。

2. 发明申请

US20140008349A1 SUBSTRATE SUPPORT FOR SUBSTRATE BACKSIDE CONTAMINATION CONTROL 有权
标题翻译：基板支撑底板污染控制
公开(公告)号：US20140008349A1
公开(公告)日：2014-01-09
申请号：US13540710
申请日：2012-07-03
申请人： GWO-CHUAN TZU , OLKAN CUVALCI , YU CHANG , XIAOXIONG YUAN
发明人： GWO-CHUAN TZU , OLKAN CUVALCI , YU CHANG , XIAOXIONG YUAN
IPC分类号： H05B3/30 , H05B3/06
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6875 , H05B3/143
摘要： Embodiments of substrate supports are provided herein. In some embodiments, a substrate support may include a first aluminum plate for supporting a substrate, the first aluminum plate having a plurality of heating elements embedded therein to provide a plurality of heating zones; a second aluminum plate disposed beneath and supporting the first aluminum plate; a third aluminum plate disposed beneath and supporting the second aluminum plate; a non-metallic ring disposed atop the first aluminum plate; and a plurality of spacers having an upper portion disposed above a surface of the first aluminum plate, wherein the non-metallic ring and the plurality of spacers support the substrate above the first aluminum plate.
摘要翻译：本文提供了基板支撑件的实施例。在一些实施例中，衬底支撑件可以包括用于支撑衬底的第一铝板，所述第一铝板具有嵌入其中的多个加热元件以提供多个加热区域; 设置在第一铝板下方并支撑第一铝板的第二铝板; 设置在第二铝板下方并支撑第二铝板的第三铝板; 设置在第一铝板顶上的非金属环; 以及多个间隔件，其具有设置在所述第一铝板的表面上方的上部，其中所述非金属环和所述多个间隔件将所述基板支撑在所述第一铝板的上方。

3. 发明申请

US20120325149A1 GAS DISTRIBUTION SYSTEM 有权
标题翻译：气体分配系统
公开(公告)号：US20120325149A1
公开(公告)日：2012-12-27
申请号：US13528906
申请日：2012-06-21
申请人： HANH D. NGUYEN , MAJEED A. FOAD , DIETER HAAS , KARL J. ARMSTRONG , XIAOXIONG YUAN
发明人： HANH D. NGUYEN , MAJEED A. FOAD , DIETER HAAS , KARL J. ARMSTRONG , XIAOXIONG YUAN
IPC分类号： C23C16/455 , F17D1/00
CPC分类号： C23C16/455 , C23C16/45565 , F17D1/00 , Y10T137/8593
摘要： In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.
摘要翻译：在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面设置在距通孔内表面的第一距离处形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中，淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。

4. 发明申请

US20120003388A1 METHODS AND APPARATUS FOR THERMAL BASED SUBSTRATE PROCESSING WITH VARIABLE TEMPERATURE CAPABILITY 有权
标题翻译：具有可变温度能力的基于热的基板加工的方法和装置
公开(公告)号：US20120003388A1
公开(公告)日：2012-01-05
申请号：US13169373
申请日：2011-06-27
申请人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
发明人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , BENJAMIN CHENG WANG , AVGERINOS V. GELATOS , KAI WU , MICHAEL P. KARAZIM , JING LIN , OLKAN CUVALCI
IPC分类号： C23C16/455 , C23C16/06 , C23C16/46 , C23C16/52 , B05C11/00 , C23C16/458
CPC分类号： C23C16/4412 , C23C16/45565 , C23C16/45587 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.
摘要翻译：衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

5. 发明申请

US20100112215A1 CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES 失效
标题翻译：化学前驱体用于蒸气沉积过程
公开(公告)号：US20100112215A1
公开(公告)日：2010-05-06
申请号：US12263022
申请日：2008-10-31
申请人： OLKAN CUVALCI , DIEN-YEH WU , XIAOXIONG YUAN
发明人： OLKAN CUVALCI , DIEN-YEH WU , XIAOXIONG YUAN
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/4482
摘要： An apparatus for generating a gaseous chemical precursor is provided and contains a canister having a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending into the canister and having an inlet end and an outlet end, wherein the inlet end is coupled to the inlet port. The apparatus further contains a gas dispersion plate coupled to the outlet end of the inlet tube, wherein the gas dispersion plate is at an angle within a range from about 3° to about 80°, relative to a horizontal plane which is perpendicular to a vertical axis of the canister.
摘要翻译：提供了一种用于产生气态化学前体的设备，并且包括具有侧壁，顶部和底部的罐的罐，其中包含内部容积，与内部空间流体连通的入口端口和出口端口，进入罐并具有入口端和出口端，其中入口端连接到入口端口。该装置还包括耦合到入口管的出口端的气体分散板，其中气体分散板相对于垂直于垂直方向的水平面处于约3°至约80°的范围内罐的轴线。

6. 发明申请

US20130247826A1 APPARATUS FOR VARIABLE SUBSTRATE TEMPERATURE CONTROL 有权
标题翻译：可变基板温度控制装置
公开(公告)号：US20130247826A1
公开(公告)日：2013-09-26
申请号：US13430278
申请日：2012-03-26
申请人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , AVGERINOS V. GELATOS , OLKAN CUVALCI , KAI WU , MICHAEL P. KARAZIM
发明人： GWO-CHUAN TZU , XIAOXIONG YUAN , AMIT KHANDELWAL , AVGERINOS V. GELATOS , OLKAN CUVALCI , KAI WU , MICHAEL P. KARAZIM
IPC分类号： C23C16/46 , F24J3/00
CPC分类号： C23C16/46 , C23C16/45565 , C23C16/4583 , C23C16/4585 , C23C16/4586 , C23C16/481 , C23C16/52
摘要： In some embodiments, an apparatus for variable substrate temperature control may include a heater moveable along a central axis of a substrate support; a seal ring disposed about the heater, the seal ring configured to interface with a shadow ring disposed above the heater to form a seal; a plurality of spacer pins configured to support a substrate and disposed within a plurality of through holes formed in the heater, the plurality of spacer pins moveable parallel to the central axis, wherein the plurality of spacer pins control a first distance between the substrate and the heater and a second distance between the substrate and the shadow ring; and a resilient element disposed beneath the seal ring to bias the seal ring toward a backside surface of the heater.
摘要翻译：在一些实施例中，用于可变衬底温度控制的装置可以包括可沿衬底支撑件的中心轴线移动的加热器; 围绕所述加热器设置的密封环，所述密封环被配置为与设置在所述加热器上方的阴影环接合以形成密封; 多个间隔销，其构造成支撑基板并且设置在形成在所述加热器中的多个通孔内，所述多个间隔销可平行于所述中心轴线移动，其中所述多个间隔销控制所述基板和所述基板之间的第一距离加热器和衬底和阴影环之间的第二距离; 以及弹性元件，其设置在所述密封环下方以将所述密封环朝向所述加热器的后侧表面偏置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式