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    • 4. 发明申请
    • VAPOR DEPOSITION REACTOR SYSTEM AND METHODS THEREOF
    • 蒸气沉积反应器系统及其方法
    • WO2010107835A3
    • 2011-01-13
    • PCT/US2010027538
    • 2010-03-16
    • ALTA DEVICES INCHE GANGHIGASHI GREGGSORABJI KHURSHEDHAMAMJY ROGERHEGEDUS ANDREAS
    • HE GANGHIGASHI GREGGSORABJI KHURSHEDHAMAMJY ROGERHEGEDUS ANDREAS
    • H01L21/205H05H1/34
    • C23C16/45565C23C16/4411C23C16/4412C23C16/45519C23C16/4557C23C16/4583C23C16/54
    • Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.
    • 本发明的实施例一般涉及用于化学气相沉积(CVD)工艺的装置和方法。 在一个实施方案中,CVD反应器具有反应器盖组件,反应器盖组件设置在反应器主体上,并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件,隔离器组件,第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板,其中第一喷头组件设置在第一面板和隔离器组件之间,排气组件设置在第二喷头组件和第二面板之间。 反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件,并且容纳可用于加热设置在晶片载体上的晶片的多个灯。