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    • 7. 发明专利
    • Sterilization apparatus and sterilization method
    • 灭菌装置和灭菌方法
    • JP2003310719A
    • 2003-11-05
    • JP2002115912
    • 2002-04-18
    • Mitsubishi Heavy Ind LtdTsuru Gakuen三菱重工業株式会社学校法人鶴学園
    • ASAHARA YUJIYOSHIDA MITSUHIROKATSURA TOSHIAKIWAKAMOTO IKUOTAKAGI TOSHINORITANAKA TAKESHI
    • A61L2/14
    • A61L2/14
    • PROBLEM TO BE SOLVED: To establish a technique for more enhancing the sterilization effect by utilizing not only the chemical effect of plasma with high diffusibility but also the physical energy of particles possessed by plasma.
      SOLUTION: A support instrument 6 for supporting an object T to be sterilized, an electrical accelerator 6 for accelerating electrons and ions with respect to the object T to be sterilized in a reverse direction and an AC electrode 6 for forming plasma P in the peripheral region of the object T to be sterilized are formed in a container 1 forming plasma P therein. The electric accelerator 6 intermittently accelerates electrons and ions in a reverse direction. Electrons or ions are accelerated by together using a DC electrode and the AC electrode to be driven in cells to be sterilized and radicals are driven in cells or the surfaces of cells in a thermal motive manner regardless of the positive and negative of an electrode. A plasma sheath is formed near the periphery of the DC electrode and, since electrons or ions are accelerated with respect to the DC electrode by Coulomb's force, sterilization effect is markedly excellent.
      COPYRIGHT: (C)2004,JPO
    • 要解决的问题:通过不仅利用具有高扩散性的等离子体的化学作用而且利用等离子体具有的粒子的物理能量来建立更多地提高灭菌效果的技术。 解决方案:用于支撑要消毒的物体T的支撑仪器6,用于相对于要反向消毒的物体T加速电子和离子的电加速器6和用于形成等离子体P的AC电极6 待灭菌对象T的周边区域形成在其中形成等离子体P的容器1中。 电加速器6以相反的方向间歇地加速电子和离子。 电子或离子通过一起使用直流电极和交流电极一起被加速,在要被灭菌的细胞中被驱动,并且以电动机的方式在电池或细胞表面中驱动自由基,而与电极的正极和负极无关。 在直流电极的周围附近形成等离子体护套,由于电子或离子通过库仑力相对于直流电极而被加速,因此杀菌效果明显优异。 版权所有(C)2004,JPO
    • 9. 发明专利
    • PLASMA PINCHING METHOD AND PLASMA ARC FURNACE
    • JPH09283277A
    • 1997-10-31
    • JP9094696
    • 1996-04-12
    • MITSUBISHI HEAVY IND LTD
    • NOMA AKIRANISHIKAWA SUSUMUTAGUMA MASAOYAMASHITA ICHIROKATSURA TOSHIAKI
    • F23G5/10H05B7/00
    • PROBLEM TO BE SOLVED: To generate a difference of electrical conductivity so as to pinch the plasma, and to eliminate the necessity of cooling device so as to simplify the structure of a device by flowing the gas, which is hard to be ionized in comparison with the operating gas, in the periphery of the plasma jet. SOLUTION: An anode 2 is arranged in a bottom part of a plasma arc furnace 8, and a hollow cathode 1 is inserted into a top part of the furnace 8 so as to face downward. An outer cylinder 3 is fitted on the periphery of the cathode l through a clearance. Operating gas 4 is flowed from the hollow part of the cathode 1 into the furnace 8, and on the other hand, pinching gas 5 such as N2 , which is hard to be ionized in comparison with the operating gas, is flowed into the furnace 8 from a clearance between the cathode 1 and the outer cylinder 5. Consequently, plasma 7 is injected from the cathode 1 to the anode 2, and the burned ash is melted, and on the other hand, electrical conductivity of the outside of the plasma 7 is lowered by the pinching gas 5, and current is hard to be flowed, and the outside current becomes small. As a result, the plasma 7 is pinched, and the current at the center is increased, and current is efficiently flowed in a molten slag 9.
    • 10. 发明专利
    • Apparatus for forming carbon-based thin film, film-forming apparatus and film-forming method
    • 用于形成基于碳的薄膜,成膜装置和成膜方法的装置
    • JP2005082887A
    • 2005-03-31
    • JP2003320205
    • 2003-09-11
    • Mitsubishi Heavy Ind LtdTsuru Gakuen三菱重工業株式会社学校法人鶴学園
    • YOSHIDA MITSUHIROKATSURA TOSHIAKICHIYOMARU MASARUFUKUMORI KENJITAKAGI TOSHINORITANAKA TAKESHI
    • H05H1/46C23C14/06C23C14/34C23C14/40
    • PROBLEM TO BE SOLVED: To provide a film-forming technology for further optimizing a quality and structure of a carbon-based thin film. SOLUTION: This film-forming apparatus comprises a vacuum vessel (1) for accommodating a workpiece (W); raw material-feeding mechanisms (4, 7 and 8) for feeding a raw material of the carbon-based thin film to be formed on the surface of the workpiece (W); an electrode (6) which is accommodated in the vacuum vessel (1) and holds the workpiece (W); and a power source (11) for generating plasma, which applies voltage for generating plasma inside the vacuum vessel (1) to the electrode (6). The voltage for generating plasma applied to the electrode (6) comprises a pulsed alternating current with RF (Radio Frequency) (22) in which alternating voltage is continued with a frequency in a radio frequency RF band for a predetermined period of time, a pulsed direct current having positive voltage (21), and a pulsed direct current having negative voltage (23). COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种用于进一步优化碳基薄膜的质量和结构的成膜技术。 解决方案:该成膜装置包括用于容纳工件(W)的真空容器(1)。 用于将要形成的碳基薄膜的原料供给到工件(W)的表面上的原料供给机构(4,7和8); 容纳在真空容器(1)中并保持工件(W)的电极(6); 以及用于产生等离子体的电源(11),其将用于在所述真空容器(1)内产生等离子体的电压施加到所述电极(6)。 用于产生施加到电极(6)的等离子体的电压包括具有射频(射频)(22)的脉冲交流电,其中交变电压以射频RF频带中的频率持续预定时间段,脉冲 具有正电压(21)的直流电流和具有负电压(23)的脉冲直流电。 版权所有(C)2005,JPO&NCIPI