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    • 5. 发明申请
    • ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS
    • 半导体加工系统中的离子源清洁
    • WO2009102762A3
    • 2009-11-12
    • PCT/US2009033754
    • 2009-02-11
    • SWEENEY JOSEPH DYEDAVE SHARAD NBYL OLEGKAIM ROBERTELDRIDGE DAVIDSERGI STEVENFENG LINBISHOP STEVEN EOLANDER KARL WTANG YING
    • SWEENEY JOSEPH DYEDAVE SHARAD NBYL OLEGKAIM ROBERTELDRIDGE DAVIDSERGI STEVENFENG LINBISHOP STEVEN EOLANDER KARL WTANG YING
    • H01L21/265
    • H01J37/3171C23C14/48C23C14/54C23C14/564H01J37/08H01J37/16H01J37/18H01J2237/082H01J2237/22
    • Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
    • 使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分,通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻 。 还描述了使用诸如XeFx,WFx,AsFx,PFx和TaFx的反应性气体,其中x具有化学计量学上适当的值或值范围,用于清除离子注入器或植入物的组分的原位或非原生境 清洁布置,在环境温度,升高的温度或等离子体条件下。 在特定的反应性清洁剂中,BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。 还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法,包括使所述前沿与清洁气体接触,其中所述清洁气体与所述沉积物化学反应。 还描述了改进离子注入系统的性能和延长寿命的方法,包括使阴极与气体混合物接触。
    • 6. 发明申请
    • PENTABORANE(9) STORAGE AND DELIVERY
    • PENTABORANE(9)存储和交付
    • WO2006083363A3
    • 2007-04-12
    • PCT/US2005042490
    • 2005-11-23
    • ADVANCED TECH MATERIALSOLANDER KARL WARNO JOSE I
    • OLANDER KARL WARNO JOSE I
    • C23C14/48B67D99/00C23C14/14C23C16/38F17C7/04
    • C23C14/48C23C16/4485F17C2205/0338F17C2205/0391H01L21/265
    • A fluid storage and dispensing system (100) comprising a vessel (126) in a liquid nitrogen bath (128) for holding a pentaborane(9)-containing fluid at subatmospheric pressure. The pentaborane may be supplied from liquid or synthesis source (124), nitrogen from valve (120), which are controlled by gas regulators (R-I & R-2). The fluid storage and dispensing system may be communicatively connected via various valves (AV-I to AV- 16 & MV-I to MV-4) to a semiconductor or liquid crystal manufacturing facility, whereby the pentaborane(9) is used as a substitute for commercially available boron hydride compounds, such as diborane. The system may include the exhaust pump (130), scrubbing means (140), and three-way valve (162) to sample the concentration of pentaborane(9) output therefrom.
    • 一种液体储存和分配系统(100),其包括用于在低于大气压的压力下保持含有五硼烷(9)的流体的液氮浴(128)中的容器(126)。 五硼烷可以由液体或合成源(124),来自阀(120)的氮提供,其由气体调节剂(R-1和R-2)控制。 液体储存和分配系统可以经由各种阀(AV-1至AV-16和MV-1至MV-4)通信连接到半导体或液晶制造设备,由此使用五硼烷(9)作为替代物 用于市售的硼氢化合物,例如乙硼烷。 系统可以包括排气泵(130),洗涤装置(140)和三通阀(162),以对从其输出的五硼烷(9)的浓度进行采样。