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    • 8. 发明申请
    • ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS
    • 半导体处理系统中的离子源清洗
    • WO2009102762A2
    • 2009-08-20
    • PCT/US2009/033754
    • 2009-02-11
    • SWEENEY, Joseph, D.YEDAVE, Sharad, N.BYL, OlegKAIM, RobertELDRIDGE, DavidSERGI, StevenFENG, LinBISHOP, Steven, E.OLANDER, Karl, W.TANG, Ying
    • SWEENEY, Joseph, D.YEDAVE, Sharad, N.BYL, OlegKAIM, RobertELDRIDGE, DavidSERGI, StevenFENG, LinBISHOP, Steven, E.OLANDER, Karl, W.TANG, Ying
    • H01L21/265
    • H01J37/3171C23C14/48C23C14/54C23C14/564H01J37/08H01J37/16H01J37/18H01J2237/082H01J2237/22
    • Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
    • 通过适当地控制电弧室中的温度,利用能够在电弧室的离子源中生长/蚀刻长丝的反应清洁试剂来清洁离子注入系统或其组件, 期望的长丝生长或替代长丝蚀刻。 还描述了使用活性气体,例如XeFx,WFx,AsFx,PFx和TaFx,其中x具有化学计量适当的值或数值范围,用于在离子注入机或注入机的部件的原位或异位清洁区域 清洁布置,在环境温度,升高的温度或等离子体条件下。 在特定的反应性清洁剂中,BrF3被描述为可用于清洁离子注入系统或其部件,在原位或非原位清洁装置中。 还描述了一种清洁离子注入系统的前级以至少部分地从所述前级去除电离相关沉积物的方法,包括使所述前级线路与清洁气体接触,其中所述清洁气体与所述沉积物发生化学反应。 还描述了改善离子注入系统的性能和延长寿命的方法,包括使阴极与气体混合物接触。