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1. 发明授权

US09431247B2 Method for ion implantation 有权
标题翻译：离子注入方法
公开(公告)号：US09431247B2
公开(公告)日：2016-08-30
申请号：US14752522
申请日：2015-06-26
申请人： ADVANCED ION BEAM TECHNOLOGY, INC.
发明人： Zhimin Wan , Kourosh Saadatmand , Wilhelm P. Platow , Ger-Pin Lin , Ching-I Li , Rekha Padmanabhan , Gary N. Cai
IPC分类号： H01L21/265 , H01J37/302
CPC分类号： H01L21/26586 , H01J37/3026 , H01J37/3171 , H01J2237/0835 , H01J2237/30455 , H01J2237/30472 , H01J2237/31706
摘要： A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.
摘要翻译：提供了一种用于离子注入的方法。首先，提供非平行离子束。此后，工件和非平行离子束之间的相对运动，以使得工件的每个区域能够被不平行离子束的不同部分连续地注入。特别地，当至少一个三维结构位于工件的上表面上时，当工件移动时，可以通过非平行离子束适当地注入三维结构的顶表面和侧表面跨越非平行离子束一次，仅一次。这里，非平行离子束可以是发散离子束或会聚离子束（两者均可视为积分发散光束），也可以直接从离子源产生或者从平行离子束修饰，发散离子束或会聚离子束。

2. 发明授权

US08673753B1 Multi-energy ion implantation 有权
标题翻译：多能离子注入
公开(公告)号：US08673753B1
公开(公告)日：2014-03-18
申请号：US13692815
申请日：2012-12-03
申请人： Advanced Ion Beam Technology, Inc.
发明人： Zhimin Wan
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/047 , H01J2237/30472 , H01L21/26513 , H01L21/26586 , H01L29/66803
摘要： In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
摘要翻译：在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。可以使用离子源和提取组件产生具有第一能量的离子束。可以跨电极组件施加第一电压。离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。可以在电极组件上施加第二电压。离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。第三能量可能与第二能量不同。

3. 发明授权

US09450078B1 Forming punch-through stopper regions in finFET devices 有权
标题翻译：在finFET器件中形成穿通止挡区域
公开(公告)号：US09450078B1
公开(公告)日：2016-09-20
申请号：US14678874
申请日：2015-04-03
申请人： Advanced Ion Beam Technology, Inc.
发明人： Daniel Tang , Zhimin Wan , Ching-I Li , Ger-Pin Lin
IPC分类号： H01L21/38 , H01L29/66 , H01L29/10 , H01L21/306 , H01L21/265 , H01L21/324 , H01L21/762
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/2658 , H01L21/26586 , H01L21/30604 , H01L21/324 , H01L21/76237 , H01L29/1083
摘要： In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.
摘要翻译：在鳍状场效应晶体管（finFET）器件中形成穿通停止区域时，可蚀刻衬底以形成限定翅片结构的一对沟槽。第一剂量的离子的一部分可以通过每个沟槽的底壁注入到衬底中，以形成至少部分地延伸在翅片结构的沟道区域下面的一对第一掺杂区域。可以蚀刻每个沟槽的底壁处的衬底以增加每个沟槽的深度。在每个沟槽的底壁处蚀刻衬底可以去除每个沟槽下的每个第一掺杂剂区域的一部分。翅片结构下面的一对第一掺杂剂区域的剩余部分可以至少部分地限定finFET器件的穿通阻挡区域。

4. 发明授权

US09057129B2 Implant method and implanter by using a variable aperture 有权
标题翻译：通过使用可变孔径进行植入法和注入机
公开(公告)号：US09057129B2
公开(公告)日：2015-06-16
申请号：US14183320
申请日：2014-02-18
申请人： Advanced Ion Beam Technology., Inc.
发明人： Zhimin Wan , John D. Pollock , Donald Wayne Berrian , Causon Ko-Chuan Jen
IPC分类号： C23C14/48 , H01J37/09 , H01J37/317
CPC分类号： C23C14/48 , H01J37/09 , H01J37/3171 , H01J2237/0455 , H01J2237/24542 , H01J2237/31711
摘要： A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.
摘要翻译：在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节简单地通过机械操作。

5. 发明授权

US08987691B2 Ion implanter and ion implant method thereof 有权
标题翻译：离子注入机及其离子注入方法
公开(公告)号：US08987691B2
公开(公告)日：2015-03-24
申请号：US13746257
申请日：2013-01-21
申请人： Advanced Ion Beam Technology, Inc.
发明人： Zhimin Wan , John D. Pollock , Don Berrian
IPC分类号： H01J37/00 , H01L21/265 , C23C14/04 , C23C14/48 , C23C14/50 , H01J37/09 , H01J37/317
CPC分类号： H01L21/265 , C23C14/04 , C23C14/48 , C23C14/50 , H01J37/09 , H01J37/3171 , H01J2237/1503 , H01J2237/20228 , H01J2237/30488
摘要： An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.
摘要翻译：公开了一种离子注入机和离子注入方法。基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。因此，可以简化移动晶片所需的硬件和/或操作。此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。

6. 发明申请

US20150056380A1 ION SOURCE OF AN ION IMPLANTER 有权
标题翻译：离子植入物的离子源
公开(公告)号：US20150056380A1
公开(公告)日：2015-02-26
申请号：US13975206
申请日：2013-08-23
申请人： ADVANCED ION BEAM TECHNOLOGY , INC.
发明人： Stephen Edward Savas , Xiao Bai , Zhimin Wan , Peter M. Kopalidis
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/08 , H01J2237/0815 , H01J2237/0817
摘要： An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.
摘要翻译：离子源使用至少一个感应线圈来产生交流磁场，以将rf / VHF功率耦合到容器内的等离子体中，其中所述激励线圈可以是单一组的匝，每一匝具有凸角或多个单独的绕组组。励磁线圈位于与抽出狭缝相对的容器的外侧和附近，并且平行于提取狭缝的长度尺寸延伸。位于外部或与容器的阱集成在一起的导电屏蔽用于阻挡与等离子体的电容耦合和/或收集任何rf / VHF电流可以耦合到等离子体中。位于容器和线圈组之间的导电屏蔽件可以屏蔽来自激励线圈的电容耦合的等离子体，或者被调谐为具有较高的rf / VHF电压以点燃或清洁源极。

7. 发明授权

US09340870B2 Magnetic field fluctuation for beam smoothing 有权
标题翻译：光束平滑的磁场波动
公开(公告)号：US09340870B2
公开(公告)日：2016-05-17
申请号：US13769189
申请日：2013-02-15
申请人： Advanced Ion Beam Technology, Inc.
发明人： Xiao Bai , Zhimin Wan , Donald Wayne Berrian
IPC分类号： C23C14/00 , C23C14/48 , H01J37/147 , H01J37/317
CPC分类号： H01J37/1475 , C23C14/48 , H01J37/3171 , H01J2237/152 , H01J2237/1526 , H01J2237/303 , H01J2237/31701 , H01J2237/31703
摘要： The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.
摘要翻译：用于在工件上注入离子的离子束的时间平均离子束轮廓可以被平滑以减少噪声，峰值，峰值等并且改善剂量均匀性。诸如电磁体的辅助磁场装置可以沿着离子束路径设置，并且可以由周期性信号驱动以产生波动的磁场来平滑离子束轮廓（即，束电流密度分布）。辅助磁场装置可以位于离子束的宽度和高度之外，并且可以产生在离子束的中心附近可能最强的不均匀的波动磁场，其中可以定位最高浓度的离子。波动的磁场可能导致光束轮廓形状连续变化，从而使噪声随时间平均化。

8. 发明授权

US09117629B2 Multi-energy ion implantation 有权
标题翻译：多能离子注入
公开(公告)号：US09117629B2
公开(公告)日：2015-08-25
申请号：US14173776
申请日：2014-02-05
申请人： Advanced Ion Beam Technology, Inc.
发明人： Zhimin Wan
IPC分类号： H01L21/425 , H01J37/317 , H01L21/265 , H01J37/302 , H01L29/66
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/047 , H01J2237/30472 , H01L21/26513 , H01L21/26586 , H01L29/66803
摘要： In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
摘要翻译：在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。可以使用离子源和提取组件产生具有第一能量的离子束。可以跨电极组件施加第一电压。离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。可以在电极组件上施加第二电压。离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。第三能量可能与第二能量不同。

9. 发明授权

US08907301B1 Gas mixture method for generating ion beam 有权
标题翻译：用于产生离子束的气体混合法
公开(公告)号：US08907301B1
公开(公告)日：2014-12-09
申请号：US14017451
申请日：2013-09-04
申请人： Advanced Ion Beam Technology, Inc.
发明人： Koulin Hu , Zhimin Wan , Wei-Cheng Lin
IPC分类号： H01J27/00 , H01J27/02
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J2237/022
摘要： A gas mixture method for generating an ion beam is provided here. By dynamically tuning the mixture ratio of the gas mixture, lifetime of the ion source of an ion implanter can be prolonged. Accordingly, quality of ion beam can be maintained and maintenance fee is reduced.
摘要翻译：此处提供了用于产生离子束的气体混合法。通过动态调整气体混合物的混合比，可以延长离子注入机的离子源的寿命。因此，可以维持离子束的质量并降低维护费用。

10. 发明申请

US20140151573A1 MULTI-ENERGY ION IMPLANTATION 有权
标题翻译：多功能离子植入
公开(公告)号：US20140151573A1
公开(公告)日：2014-06-05
申请号：US14173776
申请日：2014-02-05
申请人： Advanced Ion Beam Technology, Inc.
发明人： Zhimin Wan
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/047 , H01J2237/30472 , H01L21/26513 , H01L21/26586 , H01L29/66803
摘要： In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
摘要翻译：在多能离子注入工艺中，使用具有离子源，提取组件和电极组件的离子注入系统将离子注入到靶中。可以使用离子源和提取组件产生具有第一能量的离子束。可以跨电极组件施加第一电压。离子束可以以第一能量进入电极组件，以第二能量离开电极组件，并以第二能量将离子注入到靶中。可以在电极组件上施加第二电压。离子束可以以第一能量进入电极组件，以第三能量离开电极组件，并以第三能量将离子注入靶中。第三能量可能与第二能量不同。

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