专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007127896A2 METHOD AND SYSTEM FOR CONDITIONING A VAPOR DEPOSITION TARGET 审中-公开
标题翻译：用于调节蒸发沉积目标的方法和系统
公开(公告)号：WO2007127896A2
公开(公告)日：2007-11-08
申请号：PCT/US2007/067589
申请日：2007-04-27
申请人： ADVANCED ENERGY INDUSTRIES, INC.
发明人： ILIC, Milan , HUFF, Robert , MCDONOUGH, George
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： C23C14/34 , C23C14/54 , H01J37/32935 , H01J37/3299
摘要： A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.
摘要翻译：描述了用于调节气相沉积靶的方法和系统。在一个说明性实施例中，操作气相沉积系统，其中使用气相沉积靶，在气相沉积系统中发现电弧，并且通过调节电源的输出电流来调节气相沉积靶，为气相沉积系统提供动力并调整能量传递到每个电弧的间隔，以向每个电弧输送基本相同的能量。在一些实施例中，输送到每个电弧的能量近似等于气相沉积靶材能够承受而不被损坏的最大能量。所描述的方法和系统显着地减少了从靶中除去杂质所需的时间，并且不需要真空室的排放或者从室中移出靶。

2. 发明公开

EP1023819A2 SYSTEM FOR PLASMA IGNITION BY FAST VOLTAGE RISE 审中-公开
标题翻译： SYSTEM FOR离子点火迅速加剧紧张
公开(公告)号：EP1023819A2
公开(公告)日：2000-08-02
申请号：EP98953418.5
申请日：1998-10-13
申请人： ADVANCED ENERGY INDUSTRIES, INC.
发明人： DRUMMOND, Geoffrey, D. , MCDONOUGH, George , SCHOLL, Richard, A. , KERR, Tim , HARPOLD, John, G.
IPC分类号： H05H1/00
CPC分类号： H01J37/32009 , H05H1/46
摘要： An improved system of igniting a plasma (3) can act by using a rapid voltage rise and thus cause ions (12) which may be pre-existing to create secondary electron emission or the like. In one embodiment, the voltage rise can be timed to be comparable to the transit time of the electrons across the plasma. It can also be arranged to achieve a voltage rise in less than 1000 microseconds, to result in a transition time which is less than one hundred times the transit time, to maximize the emission of secondary electrons, or even to merely result in collision energies ranging from 5 to 500 electron volts. The transition time can be controlled through an ignition control (9) which may be programmable, may involve charging output storage devices, or may involve delayed switching to supply the increased voltage to the plasma after the storage elements have been more fully charged.

3. 发明授权

EP2013373B1 METHOD AND SYSTEM FOR CONDITIONING A VAPOR DEPOSITION TARGET 有权转让
标题翻译：方法和系统治疗AUFDAMPFUNGSZIELS的
公开(公告)号：EP2013373B1
公开(公告)日：2011-08-31
申请号：EP07761416.2
申请日：2007-04-27
申请人： ADVANCED ENERGY INDUSTRIES, INC.
发明人： ILIC, Milan , HUFF, Robert , MCDONOUGH, George
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： C23C14/34 , C23C14/54 , H01J37/32935 , H01J37/3299
摘要： A method and system for conditioning a vapor deposition target (120) is described. In one illustrative embodiment, a vapor deposition system (100) is operated in which a vapor deposition target (120) is used, the occurrence of electrical arcs in the vapor deposition system (100) is detected, and the vapor deposition target (120) is conditioned by adjusting an output current of a power supply (130) that powers the vapor deposition system (100) and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target (120) can withstand without being damaged. The described method an system significantly reduces the time required to remove impurities from a target (120) and does not require the venting of the vacuum chamber (105) or the removal of the target (120) from the chamber (105).

4. 发明公开

EP2013373A2 METHOD AND SYSTEM FOR CONDITIONING A VAPOR DEPOSITION TARGET 有权转让
标题翻译：方法和系统治疗AUFDAMPFUNGSZIELS的
公开(公告)号：EP2013373A2
公开(公告)日：2009-01-14
申请号：EP07761416.2
申请日：2007-04-27
申请人： ADVANCED ENERGY INDUSTRIES, INC.
发明人： ILIC, Milan , HUFF, Robert , MCDONOUGH, George
IPC分类号： C23C14/34
CPC分类号： C23C14/34 , C23C14/54 , H01J37/32935 , H01J37/3299
摘要： A method and system for conditioning a vapor deposition target (120) is described. In one illustrative embodiment, a vapor deposition system (100) is operated in which a vapor deposition target (120) is used, the occurrence of electrical arcs in the vapor deposition system (100) is detected, and the vapor deposition target (120) is conditioned by adjusting an output current of a power supply (130) that powers the vapor deposition system (100) and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target (120) can withstand without being damaged. The described method an system significantly reduces the time required to remove impurities from a target (120) and does not require the venting of the vacuum chamber (105) or the removal of the target (120) from the chamber (105).

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式