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1. 发明授权

KR100420950B1 파장 가변 레이저 광원 失效
标题翻译： 파장가변레이저광원
公开(公告)号：KR100420950B1
公开(公告)日：2004-03-02
申请号：KR1020010078658
申请日：2001-12-12
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S3/10
CPC分类号： H01S5/146 , H01S5/0224 , H01S5/02248 , H01S5/06256 , H01S5/1014
摘要： A wavelength tunable laser light source necessary for a Wavelength Division Multiplexing (WDM)-based optical communication system, and more particularly, a wavelength tunable laser light source for maintaining a stable wavelength without a wavelength locker is provided. The wavelength tunable laser includes an optical fiber and a semiconductor device. The optical fiber can implement multiple reflection peaks. The semiconductor device includes a mode size converter section, a gain section and a DBR mirror section. One facet of the semiconductor device, which is adjacent to the optical fiber, has an antireflection coating layer. Therefore, the wavelength tunable laser based on an optical fiber containing multiple reflection peaks can maintain excellent wavelength stability insensitive to current injection, temperature, and environments without a wavelength locker.
摘要翻译：提供了基于波分复用（WDM）的光通信系统所需的波长可调激光源，更具体地，提供了一种波长可调激光源，用于在没有波长锁定器的情况下保持稳定的波长。波长可调激光器包括光纤和半导体器件。光纤可以实现多个反射峰。该半导体器件包括模式大小转换器部分，增益部分和DBR反射镜部分。与光纤相邻的半导体器件的一个面具有抗反射涂层。因此，基于包含多个反射峰的光纤的波长可调谐激光器可以保持对电流注入，温度以及没有波长锁定器的环境不敏感的优异的波长稳定性。

2. 发明授权

KR100388485B1 다파장 단일모드 레이저 어레이 및 그 제조 방법 失效
标题翻译： 다파장단일모드레이저어레이및그제조방법
公开(公告)号：KR100388485B1
公开(公告)日：2003-06-25
申请号：KR1020010030466
申请日：2001-05-31
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S5/30
CPC分类号： H01S5/12 , H01S5/1209 , H01S5/1215 , H01S5/4031 , H01S5/4087
摘要： A laser resonator is implemented by using the -1-st order reflection peaks of a sampled grating so that the multi-wavelength single mode light source array can be manufactured easily and economically. A multi-wavelength semiconductor laser array comprises a substrate; a plurality of laser stripes arranged with a predetermined space on the substrate, each being divided into two sections; a multiplicity of asymmetric sampled gratings distributed with sampling periods different from each other on the bottom of each active layer; and a number of effective refractive index changing layers, each arranged on one section of each laser stripe to make the Bragg wavelengths different at the two sections.
摘要翻译：通过使用采样光栅的-1阶反射峰值来实现激光谐振器，使得可以容易且经济地制造多波长单模光源阵列。多波长半导体激光器阵列包括衬底; 在衬底上以预定间隔排列的多个激光条，每个激光条被分成两部分; 在每个有源层的底部上以彼此不同的采样周期分布的多个非对称采样光栅; 以及多个有效折射率变化层，每个有效折射率变化层布置在每个激光条的一个部分上，以使两个部分处的布拉格波长不同。

3. 发明授权

KR100377193B1 다파장 반도체 레이저 어레이 및 그의 제조 방법 有权
标题翻译： 다파장반보체레이저어레이및그의제조방법
公开(公告)号：KR100377193B1
公开(公告)日：2003-03-26
申请号：KR1020000073575
申请日：2000-12-06
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S5/34
摘要： PURPOSE: A multi-wavelength semiconductor laser array and a method for fabricating the same are provided to broaden a usable wavelength region and reduce an interval between channels by using a phase mask method and a selective region crystalline growth method. CONSTITUTION: A multitude of diffraction grating array(42,43,44,45,46) is formed on an InP semiconductor substrate(41). The diffraction grating array(42,43,44,45,46) have different periods. A dielectric mask pattern is formed on surfaces of both sides of the each diffraction grating of the diffraction grating arrays(42,43,44,45,46). A multi-quantum well structure(48) is formed within a period region of each diffraction grating of the diffraction grating arrays(42,43,44,45,46). The multi-quantum well structure(48) is formed by laminating an InP cladding layer, an InGaAsP optical waveguide layer, an InGaAsP quantum well layer, an InGaAsP optical waveguide layer, and InP cladding layer on the diffraction grating arrays(42,43,44,45,46) between the dielectric mask patterns.
摘要翻译：目的：提供多波长半导体激光器阵列及其制造方法，以通过使用相位掩模方法和选择区域晶体生长方法来扩大可用波长区域并减小沟道之间的间隔。构成：在InP半导体衬底（41）上形成多个衍射光栅阵列（42,43,44,45,46）。衍射光栅阵列（42,43,44,45,46）具有不同的周期。介电掩模图案形成在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的两侧的表面上。在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的周期区域内形成多量子阱结构（48）。多量子阱结构48是在衍射光栅阵列42,43,39上层叠InP包层，InGaAsP光波导层，InGaAsP量子阱层，InGaAsP光波导层，InP包层而形成的。 44,45,46）在介电掩模图案之间。

4. 发明公开

KR1020020077567A 광모드 크기 변환기가 결합된 레이저 및 그 제조 방법 无效
标题翻译：光电转换器集成半导体激光器及其制造
公开(公告)号：KR1020020077567A
公开(公告)日：2002-10-12
申请号：KR1020010017315
申请日：2001-04-02
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S5/20
CPC分类号： G02B6/1228 , H01S5/1014 , H01S5/1064
摘要： PURPOSE: A spot-size-converter integrated semiconductor laser and fabricating the same are provided to be easily manufactured with optimizing the LASER and the SSC region, respectively. CONSTITUTION: The device includes a first waveguide(42), a second waveguide(45) provided with the SSC region in the form of ridge and an active layer in a planar buried shape for coupling an optical mode to the first waveguide(42). The SSC region is formed in such a way that the width of the active layer is gradually reduced until the spot size of one end becomes approximately zero.
摘要翻译：目的：通过分别优化激光和SSC区域，可以轻松地制造点尺寸转换器集成半导体激光器并制造它们。构成：该装置包括第一波导（42），第二波导（45），其设置有脊形的SSC区域和平面埋置形状的有源层，用于将光学模式耦合到第一波导（42）。 SSC区域形成为使活性层的宽度逐渐减小，直到一端的光斑尺寸变为近似为零。

5. 发明公开

KR1020020044603A 다파장 반도체 레이저 어레이 및 그의 제조 방법 有权
标题翻译：多波长半导体激光阵列及其制造方法
公开(公告)号：KR1020020044603A
公开(公告)日：2002-06-19
申请号：KR1020000073575
申请日：2000-12-06
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S5/34
摘要： PURPOSE: A multi-wavelength semiconductor laser array and a method for fabricating the same are provided to broaden a usable wavelength region and reduce an interval between channels by using a phase mask method and a selective region crystalline growth method. CONSTITUTION: A multitude of diffraction grating array(42,43,44,45,46) is formed on an InP semiconductor substrate(41). The diffraction grating array(42,43,44,45,46) have different periods. A dielectric mask pattern is formed on surfaces of both sides of the each diffraction grating of the diffraction grating arrays(42,43,44,45,46). A multi-quantum well structure(48) is formed within a period region of each diffraction grating of the diffraction grating arrays(42,43,44,45,46). The multi-quantum well structure(48) is formed by laminating an InP cladding layer, an InGaAsP optical waveguide layer, an InGaAsP quantum well layer, an InGaAsP optical waveguide layer, and InP cladding layer on the diffraction grating arrays(42,43,44,45,46) between the dielectric mask patterns.
摘要翻译：目的：提供多波长半导体激光器阵列及其制造方法，以通过使用相位掩模法和选择性区域晶体生长法扩大可用的波长范围并减小通道之间的间隔。构成：在InP半导体衬底（41）上形成多个衍射光栅阵列（42,43,44,45,46）。衍射光栅阵列（42,43,44,45,46）具有不同的周期。在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的两侧的表面上形成介电掩模图案。在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的周期区域内形成多量子阱结构（48）。多量子阱结构（48）通过在衍射光栅阵列（42,43,34）上层叠InP包层，InGaAsP光波导层，InGaAsP量子阱层，InGaAsP光波导层和InP包层而形成， 44,45,46）。

6. 发明公开

KR1020020091635A 다파장 단일모드 레이저 어레이 및 그 제조 방법 失效
标题翻译：单波长单模激光阵列及其制作方法
公开(公告)号：KR1020020091635A
公开(公告)日：2002-12-06
申请号：KR1020010030466
申请日：2001-05-31
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S5/30
CPC分类号： H01S5/12 , H01S5/1209 , H01S5/1215 , H01S5/4031 , H01S5/4087
摘要： PURPOSE: A single wavelength single mode laser array and a fabrication method thereof are provided which can fabricate a multiwavelength array light source easily and economically using a sampling grating(SG). CONSTITUTION: An asymmetric sampling grating laser is arranged on a substrate(11) with a fixed gap. The asymmetric sampling grating laser includes an active region(21) divided into two regions(A,B), and asymmetric sampling gratings(12a,12b) distributed on a bottom of the active region with different period each other. And an effective refractive index variation layer(22) is arranged on one side of the active region and has different Bragg wavelength on two regions of the active region respectively.
摘要翻译：目的：提供单波长单模激光器阵列及其制造方法，其可以使用采样光栅（SG）容易且经济地制造多波长阵列光源。构成：非对称采样光栅激光器被布置在具有固定间隙的基板（11）上。非对称采样光栅激光器包括分为两个区域（A，B）的有源区域（21）和分布在有源区域的底部上的不对称采样光栅（12a，12b），具有不同的周期。并且有效折射率变化层（22）被布置在有源区域的一侧上，并且在有源区域的两个区域上分别具有不同的布拉格波长。

7. 发明公开

KR1020030048683A 파장 가변 레이저 광원 失效
标题翻译：光源激光源
公开(公告)号：KR1020030048683A
公开(公告)日：2003-06-25
申请号：KR1020010078658
申请日：2001-12-12
申请人： 한국전자통신연구원
发明人： 류상완 , 김제하
IPC分类号： H01S3/10
CPC分类号： H01S5/146 , H01S5/0224 , H01S5/02248 , H01S5/06256 , H01S5/1014
摘要： PURPOSE: A light source of a tunable laser is provided to form the oscillation wavelength of stable laser regardless of temperature, driving current, and external environment by using an optical fiber. CONSTITUTION: A light source of a tunable laser is formed with an optical fiber(100) and a semiconductor device(200). The optical fiber is used for forming a multiple-reflection peak. A nonreflective coating layer(32) is formed on one side of the semiconductor device. The semiconductor device includes a mode size converter region(20), a gain region(30), and a Bragg mirror region(40) in order to vary oscillation wavelength of laser. The optical fiber and the semiconductor device are coupled to each other by an optical coupling method. The oscillation wavelength of laser is determined according to the multiple-reflection peak of the optical fiber.
摘要翻译：目的：提供可调谐激光器的光源，通过使用光纤与温度，驱动电流和外部环境无关地形成稳定激光器的振荡波长。构成：可调激光器的光源由光纤（100）和半导体器件（200）形成。光纤用于形成多重反射峰。在半导体器件的一侧上形成非反射涂层（32）。半导体器件包括模式尺寸转换器区域（20），增益区域（30）和布拉格反射镜区域（40），以便改变激光器的振荡波长。光纤和半导体器件通过光耦合方法彼此耦合。根据光纤的多重反射峰值确定激光器的振荡波长。

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