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1. 发明授权

KR100655607B1 ＣＶＤ 챔버의 세정 장치 및 방법 有权
标题翻译： CVD챔버의세정장치및방법
公开(公告)号：KR100655607B1
公开(公告)日：2006-12-11
申请号：KR1020060046602
申请日：2006-05-24
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 윤영배 , 김덕진 , 이내응
IPC分类号： H01L21/3065
摘要： An apparatus for cleaning a CVD chamber is provided to improve cleaning efficiency in a CVD chamber by directly supplying NxOy gas to the CVD chamber whereas NF3 cleaning gas is transformed into a plasma state by a remote plasma generating apparatus so as to be supplied to the CVD chamber. First cleaning gas including NF3 gas is ionized by an RPS(remote plasma source) so as to be supplied by a first cleaning gas supplying line(10). Second cleaning gas including NxOy gas is supplied by a second cleaning gas supplying line(20). The first cleaning gas passes through the RPS to be supplied as an ionized state to the inside of a CVD chamber. The second cleaning gas is directly supplied to the inside of the CVD chamber while not passing through the RPS. The cleaning gas may be NF3 gas diluted by Ar gas. The second cleaning gas may be NxOy gas to which Ar gas is add.
摘要翻译：通过向CVD室直接供给NxOy气体，而通过远程等离子体产生装置将NF3清洁气体转化为等离子体状态，从而提高CVD室内的清洗效率，从而提高CVD室内的清洗效率，并供给CVD 室。包括NF3气体的第一清洁气体通过RPS（远程等离子体源）电离，以由第一清洁气体供应管线（10）供应。包括NxOy气体的第二清洁气体由第二清洁气体供应管线（20）供应。第一清洁气体通过RPS以作为离子化状态供应到CVD腔室的内部。第二清洁气体在不通过RPS的同时直接供应到CVD室的内部。清洁气体可以是用Ar气稀释的NF3气体。第二清洁气体可以是添加了Ar气体的NxOy气体。

2. 发明公开

KR1020070119169A ＣＶＤ 챔버의 세정 장치 및 방법 无效
标题翻译：清洗化学气相沉积室的装置及其清洗方法
公开(公告)号：KR1020070119169A
公开(公告)日：2007-12-20
申请号：KR1020060053424
申请日：2006-06-14
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 한동훈 , 채승기 , 이상곤 , 김종산 , 김호왕 , 남태영 , 하상선 , 이내응 , 김덕진 , 윤영배
IPC分类号： H01L21/205
CPC分类号： H01L21/67028 , C23C16/4405
摘要： An apparatus for cleaning a CVD(Chemical Vaporization Deposition) chamber and a method of cleaning the same are provided to enhance efficiency in a cleaning process by supplying directly excited oxygen and nitrogen components into the inside of the CVD chamber. An apparatus for cleaning a CVD chamber includes a first cleaning gas supply line(10) and a second cleaning gas supply line(20). A first cleaning gas having gas including a fluoric component is ionized by a remote plasma source. The first cleaning gas of an ionized state is supplied through the first cleaning gas supply line. A second cleaning gas including a nitrogen oxide-based gas which is nitrogen oxide is supplied through the second cleaning gas supply line. The first cleaning gas of the ionized state is transferred through the remote plasma source to the inside of the CVD chamber. The second cleaning gas is supplied directly to the inside of the CVD chamber.
摘要翻译：提供一种用于清洁CVD（化学气相沉积）室的设备及其清洁方法，以通过将直接激发的氧和氮组分供应到CVD室的内部来提高清洗过程中的效率。一种用于清洁CVD室的设备包括第一清洁气体供应管线（10）和第二清洁气体供应管线（20）。具有包含氟组分的气体的第一清洁气体被远程等离子体源离子化。通过第一清洗气体供给管线供给离子化状态的第一清洗气体。通过第二清洗气体供给管路供给包含氮氧化物的氮氧化物系气体的第二清洗气体。离子化状态的第一清洗气体通过远程等离子体源传送到CVD室的内部。第二清洁气体直接供应到CVD室的内部。

3. 发明授权

KR100765128B1 ＣＶＤ 챔버의 세정 장치 및 방법 有权
标题翻译：清洗化学气相沉积室的装置及其清洗方法
公开(公告)号：KR100765128B1
公开(公告)日：2007-10-11
申请号：KR1020060048921
申请日：2006-05-30
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 한동훈 , 채승기 , 이상곤 , 김종산 , 김호왕 , 남태영 , 하상선 , 이내응 , 김덕진 , 윤영배
IPC分类号： H01L21/304 , H01L21/205
摘要： A cleaning apparatus and method of a CVD(Chemical Vapor Deposition) chamber are provided to improve cleaning efficiency of the CVD chamber by agitating oxygen or nitrogen elements of a solid layer using a predetermined radical containing a fluorine element and supplying directly the agitated oxygen or nitrogen elements into the CVD chamber. A cleaning apparatus of a CVD chamber includes a first cleaning gas supply line and a second cleaning gas supply line. The first cleaning gas supply line(10) is used for receiving an ionized gas, wherein the ionized gas is obtained from a first cleaning gas containing a fluorine element by using an RPS(Remote Plasma Source). The second cleaning gas supply line(20) is used for receiving a second cleaning gas containing an NxOy gas. The second cleaning gas is directly supplied into a CVD chamber.
摘要翻译：提供了一种清洁装置和CVD（化学气相沉积）室的方法，以通过使用含氟元素的预定基团搅拌固体层的氧或氮元素并直接供应搅拌的氧气或氮气来提高CVD室的清洁效率元素进入CVD室。 CVD室的清洁装置包括第一清洁气体供应管线和第二清洁气体供应管线。第一清洁气体供给管线（10）用于接收离子化气体，其中通过使用RPS（远程等离子体源）从含有氟元素的第一清洁气体获得电离气体。第二清洁气体供给管线（20）用于接收含有N x Oy气体的第二清洗气体。将第二清洁气体直接供应到CVD室中。

4. 发明公开

KR1020080041308A 저유전체막 증착장비의 세정 장치 및 방법 无效
标题翻译：用于清洁用于沉积低介电膜的装置的装置和清洁装置的方法
公开(公告)号：KR1020080041308A
公开(公告)日：2008-05-13
申请号：KR1020060109196
申请日：2006-11-07
申请人： 주식회사 원익홀딩스
发明人： 배근학 , 김경수 , 김호식 , 이내응 , 윤영배 , 김덕진
IPC分类号： H01L21/304
摘要： A cleaning apparatus in equipment for depositing a low dielectric layer is provided to improve cleaning effect by using NO gas as cleaning gas and by supplying the cleaning gas to equipment for depositing a low dielectric layer while the cleaning gas doesn't pass through an RPS(remote plasma source) and is not ionized. First cleaning gas including F-containing gas is ionized by an RPS to be supplied to the inside of equipment for depositing a low dielectric layer by a first cleaning gas supply line(10). Second cleaning gas including NO gas is supplied to the inside of the equipment for depositing a low dielectric layer by a second cleaning supply line(20), not passing through the RPS. The first cleaning gas can be one of 100 % NF3 gas or NF3 gas diluted by Ar gas. The second cleaning gas can be one of 100 % NO gas or NO gas added with Ar gas.
摘要翻译：提供了用于沉积低介电层的设备中的清洁装置，以通过使用NO气体作为清洁气体并且通过将清洁气体供应到用于沉积低介电层的设备而清洁气体不通过RPS（以提供清洁效果）远程等离子体源），并且不离子化。包括含F气体的第一清洁气体被RPS离子化，以供应到用于通过第一清洁气体供应管线（10）沉积低电介质层的设备内部。包括NO气体的第二清洗气体通过第二清洁供给管线（20）供给到用于沉积低介电层的设备的内部，而不通过RPS。第一清洁气体可以是由Ar气稀释的100％NF3气体或NF3气体中的一种。第二清洁气体可以是添加有Ar气体的100％NO气体或NO气体中的一种。

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