会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • 가스 분사 조립체 및 이를 이용한 박막증착장치
    • 가스분사조립체및이를이용한박막증착장치
    • KR101132262B1
    • 2012-04-02
    • KR1020070086843
    • 2007-08-29
    • 주식회사 원익홀딩스
    • 서태욱박상준이호영김영준
    • H01L21/20
    • A gas injecting assembly and an apparatus for depositing a thin film using the same are provided to deposit the thin film with uniform thickness by spraying gas on the whole surface of the substrate uniformly. A gas injection assembly(50) includes a lead plate and a plurality of spray plates. The lead plate has a circular plate and is detachably coupled to the upper part of a reactor(10). A plurality of gas inlets are formed in the lead plate to pass through the lead plate. The gas inlet is arranged one by one in a region where the gas spray units are installed in the lead plate. After the gas inputted through the gas inlet is diffused in an upper diffusion space, the gas is sprayed to the lower diffusion space through a plurality of through holes formed in a diffusion plate. The gas sprayed from the lower diffusion space is sprayed to a substrate support unit(20) through a plurality of gas spray hole of the spray plate.
    • 提供一种气体注入组件和使用该组件的用于沉积薄膜的设备,以通过均匀地向基板的整个表面上喷射气体来沉积具有均匀厚度的薄膜。 气体注入组件(50)包括铅板和多个喷射板。 铅板具有圆形板并可拆卸地连接到反应器(10)的上部。 多个气体入口形成在铅板中以穿过铅板。 气体入口在气体喷射单元安装在铅板中的区域中一个接一个地布置。 在通过气体入口输入的气体在上部扩散空间中扩散之后,气体通过形成在扩散板中的多个通孔喷射到下部扩散空间。 从下扩散空间喷射的气体通过喷射板的多个气体喷射孔喷射到基板支撑单元(20)。
    • 4. 发明公开
    • 박막 증착 방법
    • 沉积薄膜的方法
    • KR1020070105638A
    • 2007-10-31
    • KR1020060038035
    • 2006-04-27
    • 주식회사 원익홀딩스
    • 이상진조병철이정욱이기훈이상규서태욱
    • H01L21/205
    • C23C16/45527C23C16/45531C23C16/4554
    • A method for depositing a thin film is provided to reduce one cycle and to improve a deposition speed by supplying simultaneously a Ti material, an Al material, and NH3. A method for depositing a thin film includes a process for performing repeatedly one cycle of forming an AlN thin film after forming a TiN thin film by using a Ti material, an Al material, and NH3, or one cycle of forming the TiN thin film after forming the AlN thin film. The method is characterized in that the TiN thin film is formed by supplying simultaneously the Ti material and the NH3. The AlN thin film is formed by supplying simultaneously the Al material and the NH3. A purge process is performed after supplying the Ti material, the Al material, and the NH3.
    • 提供沉积薄膜的方法以减少一个循环并且同时提供Ti材料,Al材料和NH 3来提高沉积速度。 一种沉积薄膜的方法包括:通过使用Ti材料,Al材料和NH 3形成TiN薄膜后,或者在形成TiN薄膜后形成TiN薄膜的一个循环,或者在 形成AlN薄膜。 该方法的特征在于,通过同时供给Ti材料和NH 3来形成TiN薄膜。 AlN薄膜通过同时供给Al材料和NH 3而形成。 在提供Ti材料,Al材料和NH 3之后进行清洗工艺。
    • 5. 发明公开
    • 가스 분사 조립체 및 이를 이용한 박막증착장치
    • 气体注入装置和使用相同方式沉积薄膜的装置
    • KR1020090021931A
    • 2009-03-04
    • KR1020070086843
    • 2007-08-29
    • 주식회사 원익홀딩스
    • 서태욱박상준이호영김영준
    • H01L21/20
    • C23C16/45574C23C16/45565
    • A gas injecting assembly and an apparatus for depositing a thin film using the same are provided to deposit the thin film with uniform thickness by spraying gas on the whole surface of the substrate uniformly. A gas injection assembly(50) includes a lead plate and a plurality of spray plates. The lead plate has a circular plate and is detachably coupled to the upper part of a reactor(10). A plurality of gas inlets are formed in the lead plate to pass through the lead plate. The gas inlet is arranged one by one in a region where the gas spray units are installed in the lead plate. After the gas inputted through the gas inlet is diffused in an upper diffusion space, the gas is sprayed to the lower diffusion space through a plurality of through holes formed in a diffusion plate. The gas sprayed from the lower diffusion space is sprayed to a substrate support unit(20) through a plurality of gas spray hole of the spray plate.
    • 提供一种气体注入组件和用于沉积具有均匀厚度的薄膜的装置,以均匀地在基片的整个表面上喷涂气体。 气体注入组件(50)包括引线板和多个喷射板。 引线板具有圆形板,并且可拆卸地联接到反应器(10)的上部。 在引线板上形成多个气体入口以通过引线板。 在气体喷射单元安装在引导板上的区域中一个接一个地排列气体入口。 在通过气体入口输入的气体在上扩散空间中扩散后,通过形成在扩散板中的多个通孔将气体喷射到下扩散空间。 从下部扩散空间喷射的气体通过喷射板的多个气体喷射孔喷射到基板支撑单元(20)。
    • 6. 发明公开
    • 웨이퍼 전달모듈 및 이를 구비한 박막 증착 시스템
    • 带有转印膜的薄膜和薄膜蒸发装置
    • KR1020080039566A
    • 2008-05-07
    • KR1020060107001
    • 2006-11-01
    • 주식회사 원익홀딩스
    • 서강진서태욱백춘금황희이우성홍석순
    • H01L21/68
    • A wafer transfer module is provided to avoid a process loss occurring in exchanging wafers with a process chamber and a loadlock unit by installing a buffer zone in a wafer transfer module so that a wafer can be stored temporarily. A transfer space in which an inlet/outlet(111a) is formed in a predetermined position is formed in a transfer module body(111). An up/down rotating unit(114) is installed in the lower part of the center of the transfer module body, rotating and moving up and down. A wafer stack table(115) is installed in a manner that several wafers(W) can be stacked as a buffer zone type in the transfer module body. A wafer transfer robot(116) holds a wafer, rotated and escalated by the up/down rotating unit. The wafer transfer robot stacks a wafer on the wafer stack table while coming in and out through the inlet/outlet. The wafer transfer robot holds the wafer on the wafer stack stable to stack the held wafer in a loadlock unit and process modules. The wafer stack table can be composed of a cassette part(115a) and a cassette installation plate(115b) to which at least one cassette part is fixed wherein the cassette is installed in a manner that the wafer transfer robot easily comes in and out to stack the wafer easily.
    • 提供了晶片传送模块,以避免通过在晶片传送模块中安装缓冲区而在处理室和负载锁定单元交换晶片时发生过程损失,从而临时存储晶片。 在传送模块主体(111)中形成有在预定位置形成入口/出口(111a)的传送空间。 上下旋转单元(114)安装在转印模块主体的中心的下部,上下旋转移动。 晶片堆叠台(115)的安装方式是可以将多个晶片(W)作为缓冲区类型堆叠在传送模块主体中。 晶片传送机器人(116)保持由上/下旋转单元旋转和升高的晶片。 晶片传送机器人在通过入口/出口进入和离开时,将晶片叠置在晶片堆叠台上。 晶片传送机械手将晶片上的晶片保持稳定,将保持的晶片堆叠在负载锁定单元和处理模块中。 晶片堆叠台可以由盒部分(115a)和盒安装板(115b)组成,盒安装板(115b)至少固定有一个盒部件,其中盒子以这样的方式安装,即晶片传送机器人容易地进出到 轻松堆叠晶圆。