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    • 1. 发明公开
    • 포토레지스트 조성물
    • 光电组合物
    • KR1020100086251A
    • 2010-07-30
    • KR1020090005522
    • 2009-01-22
    • 주식회사 동진쎄미켐
    • 신재호김동민이원영이기만김승기제갈은최기식김정원변철기변자훈
    • G03F7/022G03F7/039
    • G03F7/022G03F7/039
    • PURPOSE: A photoresist composition is provided to obtain excellent a photosensitive speed before second exposure, residual film rate, development contrast, adhesive force with a substrate, 4-mask property, and uniformity of a circuit wire width and to remarkably improve heat resistance after the second exposure. CONSTITUTION: A photoresist composition includes a novolak resin, a diazide-based photosensitive compound, a photoacid generator of a chemical formula 1 or a chemical formula 2, a melamine resin of a chemical formula 3, and an organic solvent. In the chemical formula 1, R1 is an aromatic compound having a carbon number of 10-20 and R2 and R3 are halogen elements. In the chemical formula 2, R1 is an alkyl group which has a carbon number of 1-10 and is substituted with the halogen element.
    • 目的:提供光致抗蚀剂组合物,以在第二曝光之前获得优异的感光速度,残留膜率,显影对比度,与基板的粘合力,4掩模性能和电路线宽度的均匀性,并且显着提高后的耐热性 第二次曝光 构成:光致抗蚀剂组合物包括酚醛清漆树脂,二叠氮基感光性化合物,化学式1的光酸产生剂或化学式2,化学式3的三聚氰胺树脂和有机溶剂。 在化学式1中,R 1为碳数为10〜20的芳香族化合物,R 2,R 3为卤素元素。 在化学式2中,R 1是碳数为1-10并被卤素元素取代的烷基。