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    • 2. 发明公开
    • 불투명 전도성 산화물 박막 및 그를 이용한 액정표시장치
    • OPAQUE导电氧化薄膜和液晶显示器件使用相同
    • KR1020090034658A
    • 2009-04-08
    • KR1020070100020
    • 2007-10-04
    • 엘지디스플레이 주식회사연세대학교 산학협력단
    • 김강석안유경오병윤명재민정민창
    • G02F1/1343C01G15/00C01G19/00
    • H01L29/786G02F1/1343G02F1/136286G09G2320/066
    • An opaque conductive oxide thin film doped with a transition metal and a liquid crystal display device using the same are provided to improve a contrast ratio by including a pixel electrode and a common electrode formed by an opaque conductive oxide thin film. A gate line and a data line are formed on a substrate by turns, and define a pixel. A TFT(Thin Film Transistor) is formed on pixels, and is connected to the gate line and the data line. A pixel electrode(105) is formed by doping an opaque transition metal in a transparent conductive oxide, and is connected to the TFT. A common electrode(106) is formed on pixels, forms a horizontal electric field together with the pixel electrode, and is formed by doping an opaque transition metal in a transparent conductive oxide. The transparent conductive oxide includes one among ITO(Indium Tin Oxide) and ZnO(Zinc Oxide).
    • 提供掺杂有过渡金属的不透明导电氧化物薄膜和使用其的液晶显示装置,以通过包括由不透明导电氧化物薄膜形成的像素电极和公共电极来提高对比度。 栅极线和数据线被轮流形成在衬底上,并且限定像素。 在像素上形成TFT(薄膜晶体管),并连接到栅极线和数据线。 像素电极(105)通过在透明导电氧化物中掺杂不透明过渡金属形成,并连接到TFT。 公共电极(106)形成在像素上,与像素电极一起形成水平电场,并且通过在透明导电氧化物中掺杂不透明的过渡金属形成。 透明导电氧化物包括ITO(氧化铟锡)和ZnO(氧化锌)之一。