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1. 发明公开

KR1020020088598A 연마 패드 컨디셔닝 방법 및 이를 수행하기 위한 화학기계적 연마장치 无效
标题翻译：用于调节抛光垫的方法和用于实施其的化学机械装置
公开(公告)号：KR1020020088598A
公开(公告)日：2002-11-29
申请号：KR1020010027353
申请日：2001-05-18
申请人： 삼성전자주식회사
发明人： 이선웅 , 김종수 , 부재필 , 유준규 , 이상선
IPC分类号： H01L21/304
摘要： PURPOSE: A method for conditioning a polishing pad and a chemical mechanical device for performing the same are provided to identify a variation of profile of the polishing pad and change the power of a conditioning disc according each position of the polishing pad. CONSTITUTION: A main computer transmits a conditioning recipe to a converter(S10). The converter receives the conditioning recipe from the main computer, converts the conditioning recipe to air, and transmits the converted air to a disc drive portion(S12). A surface of a polishing pad is conditioned by using the recipe(S14). At this time, a groove profile signal of the polishing pad is detected by using a pad sensor installed at a disc head(S16). The depth of a groove of the polishing pad is measured by analyzing the groove profile signal. A final pad profile is obtained by combining each signals(S18). The final pad profile is determined as a reference pad profile. A standard pad profile of a user is compared with the reference pad profile. The next recipe is determined by using a difference between the standard pad profile and the reference pad profile(S20).
摘要翻译：目的：提供用于调理抛光垫的方法和用于执行抛光垫的化学机械装置的方法以识别抛光垫的轮廓的变化，并根据抛光垫的每个位置改变调节盘的功率。构成：主计算机向转换器发送调理配方（S10）。转换器从主计算机接收调理配方，将调理配方转换为空气，并将转换的空气传送到盘驱动部分（S12）。通过使用配方来调节抛光垫的表面（S14）。此时，通过使用安装在盘头上的垫传感器来检测抛光垫的凹槽轮廓信号（S16）。通过分析凹槽轮廓信号来测量抛光垫的凹槽的深度。通过组合每个信号获得最终的焊盘轮廓（S18）。最终的焊盘轮廓被确定为参考焊盘轮廓。将用户的标准焊盘轮廓与参考焊盘轮廓进行比较。通过使用标准焊盘轮廓和参考焊盘轮廓之间的差异来确定下一个配方（S20）。

2. 发明公开

KR1020020040529A 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 失效
标题翻译：化学机械抛光装置抛光头及其抛光方法
公开(公告)号：KR1020020040529A
公开(公告)日：2002-05-30
申请号：KR1020010011055
申请日：2001-03-03
申请人： 삼성전자주식회사
发明人： 부재필 , 유준규 , 이상선 , 이선웅
IPC分类号： H01L21/304
CPC分类号： B24B37/30
摘要： PURPOSE: A polishing head of a CMP(Chemical Mechanical Polishing) apparatus and a polishing method thereof are provided to minimize defects due to a stable fix of a wafer by directly adsorbing the wafer using vacuum state. CONSTITUTION: A CMP(Chemical Mechanical Polishing) apparatus comprises a polishing pad(112) mounted on a supporting part(114), a polishing head(130) for polishing a wafer located on the polishing pad(112) of the supporting part(114). The polishing head(130) further includes a bowl-shaped carrier(134), a retainer ring(140) located on the lower edge portion of the carrier(134), a supporter respectively providing a first chamber(160) and a second chamber(136), and a membrane. A plurality of first holes(156) connected to the first chamber(160) and second holes(158) connected to the second chamber(136) are formed on the surface of the supporter. The membrane includes a plurality of third holes(172) comparing to the first holes(156). At this point, the wafer is stably fixed.
摘要翻译：目的：提供CMP（化学机械抛光）装置的抛光头及其抛光方法，以通过使用真空状态直接吸附晶片来使晶片的稳定固定最小化缺陷。构造：CMP（化学机械抛光）装置包括安装在支撑部分（114）上的抛光垫（112），用于抛光位于支撑部分（114）的抛光垫（112）上的晶片的抛光头（130））。抛光头（130）还包括碗形托架（134），位于托架（134）的下边缘部分上的保持环（140），支撑件分别提供第一腔室（160）和第二腔室（136）和膜。连接到第一室160的多个第一孔156和与第二室136连接的第二孔158形成在支撑体的表面上。膜包括与第一孔（156）相比较的多个第三孔（172）。此时，晶片稳定地固定。

3. 发明授权

KR100437456B1 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 失效
标题翻译： 화학적기계적평탄기기계의폴리싱헤드및그것을이용한폴리싱방
公开(公告)号：KR100437456B1
公开(公告)日：2004-06-23
申请号：KR1020010030365
申请日：2001-05-31
申请人： 삼성전자주식회사
发明人： 부재필 , 김종수 , 유준규 , 이상선 , 이선웅
IPC分类号： H01L21/304
CPC分类号： B24B41/061 , B24B37/30
摘要： PURPOSE: A polishing head of a CMP(Chemical Mechanical Polishing) apparatus and a polishing method using the same are provided to obtain high polishing uniformity in a polishing process by controlling variably pressures applied to each region of a wafer. CONSTITUTION: A CMP apparatus(100) has a polishing station(110) and a polishing head assembly(120). A rotary turntable(114) having a polishing pad(112) is installed in the polishing station(110). The rotary turntable(114) is connected with a rotary device. The polishing pad(112) is formed with a complex material having a polishing face. The polishing station(110) includes a pad conditioning portion(116) and a slurry supply portion(118). The slurry supply portion(118) is used for supplying a slurry to a surface of a pad. The slurry includes a reaction reagent, frictional particles, and a chemical reaction catalyst. The polishing head assembly(120) includes a polishing head(130), a driving shaft(122), and a motor(124). The polishing head(130) faces the polishing pad(112). The polishing head(130) is rotated by the driving shaft(122) connected with the motor(124).
摘要翻译：目的：提供CMP（化学机械抛光）装置的抛光头和使用该装置的抛光方法，以通过控制施加到晶片的每个区域的可变压力来获得抛光工艺中的高抛光均匀性。构成：CMP设备（100）具有抛光台（110）和抛光头组件（120）。具有抛光垫（112）的旋转转盘（114）安装在抛光站（110）中。旋转转盘（114）与旋转装置连接。研磨垫（112）由具有研磨面的复合材料形成。抛光站（110）包括垫调节部分（116）和浆料供应部分（118）。浆液供应部分（118）用于将浆液供应到衬垫的表面。浆料包括反应试剂，摩擦颗粒和化学反应催化剂。抛光头组件（120）包括抛光头（130），驱动轴（122）和马达（124）。抛光头（130）面向抛光垫（112）。抛光头（130）由与马达（124）连接的驱动轴（122）旋转。

4. 发明公开

KR1020020078428A 반도체 메모리 소자의 소자격리 영역 제조방법 无效
标题翻译：半导体存储器件领域制造方法
公开(公告)号：KR1020020078428A
公开(公告)日：2002-10-18
申请号：KR1020010018787
申请日：2001-04-09
申请人： 삼성전자주식회사
发明人： 부재필 , 김경현 , 이선웅
IPC分类号： H01L21/76
摘要： PURPOSE: A method for manufacturing of field area in semiconductor memory device is provided to improve reliability in a process of etching a floating gate and a contact, by making the thickness of an ununiform isolation region generated by a chemical mechanical polishing(CMP) process while using a wet etch process. CONSTITUTION: A tunnel insulation layer(32), a conductive layer and the first insulation layer which have different thicknesses are sequentially formed on a semiconductor substrate(31). An isolation region of a predetermined depth is formed in a predetermined region of the semiconductor substrate. The second insulation layer(37) and the third insulation layer are sequentially formed on the entire surface. The third insulation layer is planarized by a CMP process. The second and third insulation layers are removed by an etch process.
摘要翻译：目的：提供半导体存储器件中的场区的制造方法，以通过使化学机械抛光（CMP）工艺产生的不均匀隔离区域的厚度同时提高蚀刻浮栅和触点的过程中的可靠性，同时使用湿蚀刻工艺。构成：在半导体衬底（31）上依次形成具有不同厚度的隧道绝缘层（32），导电层和第一绝缘层。在半导体衬底的预定区域中形成预定深度的隔离区域。第二绝缘层（37）和第三绝缘层依次形成在整个表面上。第三绝缘层通过CMP工艺平坦化。通过蚀刻工艺去除第二和第三绝缘层。

5. 发明公开

KR1020010019281A 화학-기계적 연마 장치 无效
标题翻译：化学机械抛光装置
公开(公告)号：KR1020010019281A
公开(公告)日：2001-03-15
申请号：KR1019990035614
申请日：1999-08-26
申请人： 삼성전자주식회사
发明人： 이선웅 , 이재창
IPC分类号： H01L21/302
摘要： PURPOSE: A chemical mechanical polishing(CMP) apparatus is provided to control a fine scratch on a surface of a wafer, by preventing slurry leftovers from being dried on an outer wall of a tank for storing slurry. CONSTITUTION: A slurry system supplies slurry to an interface between a wafer and a polishing pad. The slurry is stored in a tank. A deionized(DI) water spray unit(104) is installed inside the tank. A DI water supplying pipe(106) is connected to the DI water spray unit from the outside of the tank. Air is injected into the DI water supply unit to exhaust DI water remaining in the tank to the outside of the tank.
摘要翻译：目的：提供化学机械抛光（CMP）装置，通过防止浆料残留物在用于储存浆料的罐的外壁上干燥来控制晶片表面上的细小划痕。构成：浆料系统将浆料供应到晶片和抛光垫之间的界面。将浆料储存在罐中。一个去离子（DI）喷水装置（104）安装在罐内。 DI水供给管（106）从罐外部与去离子水喷射单元连接。空气被注入去离子水供应单元，以将残留在罐中的去离子水排出到罐的外部。

6. 发明公开

KR1020090002780A 슬러리 공급 암 无效
标题翻译：浆液运输ARM
公开(公告)号：KR1020090002780A
公开(公告)日：2009-01-09
申请号：KR1020070067016
申请日：2007-07-04
申请人： 삼성전자주식회사
发明人： 유진수 , 이선웅 , 김종복 , 윤현주 , 김진국 , 차성호
IPC分类号： H01L21/304
摘要： A slurry supply arm is provided to prevent the solidification phenomenon of slurry during the chemical mechanical polishing process. A slurry supply arm(20) comprises a body, a variable location type slurry supply nozzle(23) a first rinse fluid spray hole(24), and a rinse fluid supply nozzle(26). The variable location type slurry supply nozzle supplies the slurry to the grinding pad. The variable location type slurry supply nozzle is installed at the central part of the body and moves along the longitudinal direction of the body. First rinse fluid spray holes spray the first rinse fluid onto the grinding pad. The rinse fluid supply nozzle is installed between the edges of the body and the variable location type slurry supply nozzle. The rinse fluid supply nozzle can spray the second rinse fluid through a second rinse fluid spray hole(27) onto the grinding pad and body.
摘要翻译：提供浆料供给臂以防止在化学机械抛光过程中浆料的凝固现象。浆料供给臂（20）包括主体，可变位置型浆料供给喷嘴（23），第一冲洗流体喷射孔（24）和冲洗液供给喷嘴（26）。可变位置型浆料供应喷嘴将浆料供应到研磨垫。可变位置型浆料供应喷嘴安装在主体的中心部分并沿着主体的纵向方向移动。首先冲洗流体喷孔将第一个冲洗液喷到研磨垫上。冲洗流体供应喷嘴安装在主体的边缘和可变位置型浆料供应喷嘴之间。冲洗流体供应喷嘴可以将第二冲洗流体通过第二冲洗流体喷射孔（27）喷洒到研磨垫和主体上。

7. 发明授权

KR100423909B1 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 失效
标题翻译： 화학적기계적평탄기기계의폴리싱헤드및그것을이용한폴리싱방
公开(公告)号：KR100423909B1
公开(公告)日：2004-03-24
申请号：KR1020010011055
申请日：2001-03-03
申请人： 삼성전자주식회사
发明人： 부재필 , 유준규 , 이상선 , 이선웅
IPC分类号： H01L21/304
CPC分类号： B24B37/30
摘要： PURPOSE: A polishing head of a CMP(Chemical Mechanical Polishing) apparatus and a polishing method thereof are provided to minimize defects due to a stable fix of a wafer by directly adsorbing the wafer using vacuum state. CONSTITUTION: A CMP(Chemical Mechanical Polishing) apparatus comprises a polishing pad(112) mounted on a supporting part(114), a polishing head(130) for polishing a wafer located on the polishing pad(112) of the supporting part(114). The polishing head(130) further includes a bowl-shaped carrier(134), a retainer ring(140) located on the lower edge portion of the carrier(134), a supporter respectively providing a first chamber(160) and a second chamber(136), and a membrane. A plurality of first holes(156) connected to the first chamber(160) and second holes(158) connected to the second chamber(136) are formed on the surface of the supporter. The membrane includes a plurality of third holes(172) comparing to the first holes(156). At this point, the wafer is stably fixed.
摘要翻译：目的：提供一种CMP（化学机械抛光）装置的抛光头及其抛光方法，以通过使用真空状态直接吸附晶片来稳定地固定晶片而使缺陷最小化。一种CMP（化学机械抛光）装置包括安装在支撑部分（114）上的抛光垫（112），用于抛光位于支撑部分（114）的抛光垫（112）上的晶圆的抛光头（130））。所述抛光头还包括碗状载体（134），位于所述载体（134）的下边缘部分上的挡圈（140），分别提供第一腔室（160）和第二腔室（136）和膜。连接到第一腔室（160）的多个第一孔（156）和连接到第二腔室（136）的第二孔（158）形成在支撑件的表面上。与第一孔（156）相比，隔膜包括多个第三孔（172）。此时，晶片稳定固定。

8. 发明授权

KR100338778B1 선택적 실리사이드 공정을 이용한 모스 트랜지스터의제조방법 有权
标题翻译：使用选择性硅化物工艺制造MOS晶体管的方法
公开(公告)号：KR100338778B1
公开(公告)日：2002-05-31
申请号：KR1020000048326
申请日：2000-08-21
申请人： 삼성전자주식회사
发明人： 이선웅 , 부재필 , 김경현 , 홍창기
IPC分类号： H01L21/336
摘要： 본 발명의 선택적 실리사이드 공정을 이용한 모스 트랜지스터의 제조 방법에 따르면, 먼저 실리콘 기판 위에 게이트 절연막 및 게이트 폴리실리콘막을 순차적으로 형성하고, 게이트 절연막 및 게이트 폴리실리콘막 측벽에 게이트 스페이서를 형성한다. 다음에 게이트 스페이서 및 게이트 폴리실리콘막을 마스크막으로 불순물 이온 주입 및 확산 공정을 수행하여 실리콘 기판에 소스/드레인 영역을 형성한다. 다음에 소스/드레인 영역, 게이트 스페이서 및 게이트 폴리실리콘막을 덮는 식각 저지막을 형성하고, 이어서 식각 저지막을 덮는 절연막을 형성한다. 다음에 절연막을 평탄화하여 게이트 폴리실리콘막 위의 식각 저지막을 노출시킨다. 다음에 노출된 식각 저지막 및 게이트 스페이서의 일부를 식각하여 게이트 폴리실리콘막의 상부 표면 및 상부 측면이 노출되도록 한다. 그리고 게이트 폴리실리콘막의 노출 부분 위에 실리사이드막을 형성한다.

9. 发明公开

KR1020020091325A 화학적 기계적 평탄화 기계의 폴리싱 헤드 및 그것을이용한 폴리싱방법 失效
标题翻译： CMP装置的抛光头和使用它的抛光方法
公开(公告)号：KR1020020091325A
公开(公告)日：2002-12-06
申请号：KR1020010030365
申请日：2001-05-31
申请人： 삼성전자주식회사
发明人： 부재필 , 김종수 , 유준규 , 이상선 , 이선웅
IPC分类号： H01L21/304
CPC分类号： B24B41/061 , B24B37/30
摘要： PURPOSE: A polishing head of a CMP(Chemical Mechanical Polishing) apparatus and a polishing method using the same are provided to obtain high polishing uniformity in a polishing process by controlling variably pressures applied to each region of a wafer. CONSTITUTION: A CMP apparatus(100) has a polishing station(110) and a polishing head assembly(120). A rotary turntable(114) having a polishing pad(112) is installed in the polishing station(110). The rotary turntable(114) is connected with a rotary device. The polishing pad(112) is formed with a complex material having a polishing face. The polishing station(110) includes a pad conditioning portion(116) and a slurry supply portion(118). The slurry supply portion(118) is used for supplying a slurry to a surface of a pad. The slurry includes a reaction reagent, frictional particles, and a chemical reaction catalyst. The polishing head assembly(120) includes a polishing head(130), a driving shaft(122), and a motor(124). The polishing head(130) faces the polishing pad(112). The polishing head(130) is rotated by the driving shaft(122) connected with the motor(124).
摘要翻译：目的：提供CMP（化学机械抛光）装置的抛光头和使用其的抛光方法，以通过控制施加到晶片的每个区域的可变压力来在抛光过程中获得高抛光均匀性。构造：CMP设备（100）具有抛光台（110）和抛光头组件（120）。具有抛光垫（112）的旋转转盘（114）安装在抛光台（110）中。旋转转盘（114）与旋转装置连接。抛光垫（112）由具有抛光面的复合材料形成。抛光台（110）包括垫调节部分（116）和浆料供应部分（118）。浆料供应部分（118）用于将浆料供应到垫的表面。浆料包括反应试剂，摩擦颗粒和化学反应催化剂。抛光头组件（120）包括抛光头（130），驱动轴（122）和电动机（124）。抛光头（130）面向抛光垫（112）。抛光头（130）由与马达（124）连接的驱动轴（122）旋转。

10. 发明公开

KR1020020015160A 선택적 실리사이드 공정을 이용한 모스 트랜지스터의제조방법 有权
标题翻译：使用选择性硅酮工艺形成金属氧化物半导体晶体管的方法
公开(公告)号：KR1020020015160A
公开(公告)日：2002-02-27
申请号：KR1020000048326
申请日：2000-08-21
申请人： 삼성전자주식회사
发明人： 이선웅 , 부재필 , 김경현 , 홍창기
IPC分类号： H01L21/336
CPC分类号： H01L21/823468 , H01L21/28052 , H01L21/28114 , H01L21/823425 , H01L21/823443
摘要： PURPOSE: A method for forming a metal-oxide-semiconductor(MOS) transistor using a selective silicide process is provided to control a defect inside a silicon substrate in a silicide process by selectively forming a silicide layer only on a gate polysilicon layer, and to form a relatively thin interlayer dielectric covering the silicide layer by forming the silicide layer after an insulation layer is formed. CONSTITUTION: A gate insulation layer(410) and a gate polysilicon layer(420) are sequentially formed on the silicon substrate(400). A gate spacer(430) is formed on the sidewall of the gate insulation layer and the gate polysilicon layer. An impurity ion implantation process and a diffusion process are performed to form a source/drain region(440) in the substrate by using the gate spacer and the gate polysilicon layer as a mask. An etch stop layer(450) is formed to cover the source/drain region, the gate spacer and the gate polysilicon layer. An insulation layer(460) covering the etch stop layer is formed. The insulation layer is planarized to expose the etch stop layer on the gate polysilicon layer. Parts of the exposed etch stop layer and the gate spacer are etched to expose the upper surface and upper side surface of the gate polysilicon layer. The silicide layer(480) is selectively formed on the exposed portion of the gate polysilicon layer.
摘要翻译：目的：提供一种使用选择性硅化物工艺形成金属氧化物半导体（MOS）晶体管的方法，以通过在栅极多晶硅层上选择性地形成硅化物层来控制硅化物工艺中的硅衬底内的缺陷，以及通过在形成绝缘层之后形成硅化物层，形成覆盖硅化物层的相对薄的层间电介质。构成：在硅衬底（400）上依次形成栅极绝缘层（410）和栅极多晶硅层（420）。栅极间隔物（430）形成在栅极绝缘层和栅极多晶硅层的侧壁上。通过使用栅极间隔物和栅极多晶硅层作为掩模，执行杂质离子注入工艺和扩散处理以在衬底中形成源极/漏极区域（440）。形成蚀刻停止层（450）以覆盖源极/漏极区域，栅极间隔物和栅极多晶硅层。形成覆盖蚀刻停止层的绝缘层（460）。将绝缘层平坦化以暴露栅极多晶硅层上的蚀刻停止层。暴露的蚀刻停止层和栅极间隔物的一部分被蚀刻以露出栅极多晶硅层的上表面和上侧表面。硅化物层（480）选择性地形成在栅极多晶硅层的暴露部分上。

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