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    • 5. 发明公开
    • 반도체 제조설비
    • 半导体制造设备
    • KR1020070082786A
    • 2007-08-22
    • KR1020060015865
    • 2006-02-17
    • 삼성전자주식회사
    • 김정남
    • H01L21/306
    • H01L21/67028H01J2237/335
    • Semiconductor fabricating equipment is provided to completely remove a native oxide layer formed on a semiconductor substrate by enabling precise management of a cleaning process. A semiconductor substrate is received in a process chamber(110). Reaction gas for processing the semiconductor substrate is introduced into a gas introduction line(115) connected to the process chamber. Gas in the process chamber and reaction byproducts generated in the process chamber are exhausted through an exhaust line(116) connected to the process chamber. The inside of the process chamber is heated by a heater. A guide bar(118) penetrates the process chamber to be extended to the periphery of the semiconductor substrate received in the process chamber. A thermocouple measures the temperature of the periphery of the semiconductor substrate, inserted into the guide bar. The reaction gas introduced into the gas introduction line can be distributed in various directions of the chamber by a gas distribution plate installed in the process chamber.
    • 提供半导体制造设备以通过能够精确地管理清洁过程来完全去除形成在半导体衬底上的自然氧化物层。 半导体衬底被接收在处理室(110)中。 将用于处理半导体衬底的反应气体引入连接到处理室的气体引入管线(115)中。 处理室中产生的气体和在处理室中产生的反应副产物通过连接到处理室的排气管线(116)排出。 处理室的内部由加热器加热。 引导杆(118)穿过处理室以延伸到接收在处理室中的半导体衬底的周边。 热电偶测量插入到导杆中的半导体衬底的周边的温度。 引入气体引入管线的反应气体可以通过安装在处理室中的气体分配板分布在室的各个方向上。
    • 6. 发明公开
    • LP CⅤD 장치의 로드락 챔버
    • 低压化学气相沉积装置的装载机
    • KR1020070066712A
    • 2007-06-27
    • KR1020050128161
    • 2005-12-22
    • 삼성전자주식회사
    • 김정남
    • H01L21/205H01L21/68
    • C23C16/4409C23C16/4412H01L21/67201
    • A loadlock chamber of an LPCVD apparatus is provided to prevent external air from being introduced into a chamber by making the inner pressure of the chamber having a pressure higher than the atmospheric pressure and maintaining the pressure before a door of the chamber opens to transport a wafer. A shutter(114) for opening/shutting a connection path to a vertical furnace(10) and a door(112) for transporting a wafer are installed in a chamber(110). A pressure gauge(118) measures the inner pressure of the chamber. A nitrogen gas supply source supplies nitrogen gas to the inside of the chamber. A vacuum pump(134) is connected to the chamber by a pumping line(130) in which a main valve(132) is installed. The nitrogen gas is exhausted by an exhaust line(140). The flowrate of the exhaust line is adjusted by a throttle valve(142). Based upon the pressure data measured by the pressure gauge, the main valve and the throttle valve are controlled by a controller(150). The exhaust gas can be purified by a scrubber(138) connected to the vacuum pump and the exhaust line.
    • 提供LPCVD装置的装载室,以通过使室的内部压力高于大气压力来保持外部空气被引入室中,并且保持在室的门打开之前的压力以输送晶片 。 用于打开/关闭到垂直炉(10)的连接路径和用于输送晶片的门(112)的快门(114)安装在室(110)中。 压力计(118)测量腔室的内部压力。 氮气供应源将氮气供应到室的内部。 真空泵(134)通过其中安装有主阀(132)的泵送管线(130)连接到腔室。 氮气由排气管(140)排出。 排气管路的流量由节流阀(142)调节。 基于由压力表测量的压力数据,主阀和节流阀由控制器(150)控制。 废气可以通过连接到真空泵和排气管的洗涤器(138)来净化。
    • 7. 发明公开
    • 반도체 소자 제조용 확산장치 및 그의 진공펌프 연결방법
    • 用于连接使用其的涡轮真空泵的扩散装置和方法
    • KR1020070058248A
    • 2007-06-08
    • KR1020050116639
    • 2005-12-01
    • 삼성전자주식회사
    • 김정남
    • H01L21/02
    • A diffusion device for fabricating a semiconductor device and a method for connecting a vacuum pump thereof are provided to prevent leakage of vacuum from a turbo vacuum pump to a first movable connection port via a second vacuum pump. A heat part is installed on one end of a bell shaped diffusion furnace used for fabricating a semiconductor device. A first connection port is installed on a flange of the heater part to connect a vacuum pump. A movable part(62) is installed on one end of the first connection port to move a second connection port of the vacuum pump. The movable part has a safety link(70) for preventing release of the second connection port, and a fixing portion(64) connected to a handle of the movable part.
    • 提供一种用于制造半导体器件的扩散装置及其真空泵的连接方法,以防止真空从涡轮真空泵经由第二真空泵泄漏到第一可移动连接端口。 加热部件安装在用于制造半导体器件的钟形扩散炉的一端。 第一连接端口安装在加热器部分的法兰上以连接真空泵。 可移动部分(62)安装在第一连接端口的一端以移动真空泵的第二连接端口。 可移动部件具有用于防止第二连接口的释放的安全连杆(70)和连接到可动部件的手柄的固定部(64)。
    • 8. 发明公开
    • 반도체 제조장치의 종형 확산로
    • 半导体器件中的垂直炉
    • KR1020070056408A
    • 2007-06-04
    • KR1020050114988
    • 2005-11-29
    • 삼성전자주식회사
    • 김정남
    • H01L21/22
    • A vertical diffusion furnace of semiconductor manufacturing equipment is provided to control the size of a boat according to the number of wafers and to perform easily boat cleaning and transferring processes by using at least two boat units. A vertical diffusion furnace of semiconductor manufacturing equipment includes boat units and reaction tube. The boat unit(31) is composed of an upper plate(41), a lower plate(43) vertically spaced apart from the upper plate, and a plurality of pillars(45) for supporting the upper and lower plates between the upper and the lower plates. The reaction tube is used for storing the boat units. The reaction tube has a predetermined height. At least two boat units are stored in the reaction tube.
    • 提供半导体制造设备的垂直扩散炉,以根据晶片的数量来控制船的尺寸,并且通过使用至少两个船单元来执行船清洁和转移处理。 半导体制造设备的垂直扩散炉包括船单元和反应管。 船单元(31)由上板(41),与上板垂直隔开的下板(43)和多个支柱(45)组成,用于将上板和下板 下板。 反应管用于存放船单元。 反应管具有预定的高度。 至少两个船单元存储在反应管中。