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1. 发明公开

KR1020130015943A 식각액 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조 방법 有权
标题翻译：蚀刻组合物，使用蚀刻剂形成金属图案的方法和制造显示基板的方法
公开(公告)号：KR1020130015943A
公开(公告)日：2013-02-14
申请号：KR1020110078297
申请日：2011-08-05
申请人： 삼성디스플레이 주식회사 , 주식회사 동진쎄미켐
发明人： 김인배 , 정종현 , 박지영 , 김선일 , 정재우 , 김상갑 , 김상우 , 이기범 , 이대우 , 조삼영
IPC分类号： C23F1/14 , C23F1/02 , H05K1/09 , H05K3/06
CPC分类号： C23F1/18 , C09K13/08 , C23F1/26 , H01L21/32134 , H01L27/124
摘要： PURPOSE: An etchant composition, a method for forming a metal pattern using the same and a method for manufacturing a display substrate using the same are provided to offer an etchant not including hydrogen peroxide for etching a copper layer, thereby preventing heat generation during metal etching and enhancing the stability of the etchant composition. CONSTITUTION: An etchant composition comprises 0.1 wt% to 25 wt% ammonium peroxodisulfate, 0.1 wt% to 25 wt% organic acids, 0.01 wt% to 5 wt% chelating agents, 0.01 wt% to 5 wt% fluoride compounds, 0.01 wt% to 5 wt% chloride compounds, 0.01 wt% to 2 wt% azole compounds, and water. The chloride compound is at least one from a group consisting of hydrochloric acid(HCl), ammonium chloride(NH4Cl), potassium chloride(KCl), Iron(III) chloride(FeCl3), sodium chloride(NaCl), ammonium perchlorate(NH4ClO4), potassium perchlorate(NH4ClO4), sodium perchlorate(Na4ClO4), and zinc chloride(ZnCl2).
摘要翻译：目的：提供蚀刻剂组合物，使用其形成金属图案的方法和使用其的显示基板的制造方法，以提供不含过氧化氢的蚀刻剂来蚀刻铜层，从而防止在金属蚀刻期间发热并提高蚀刻剂组合物的稳定性。构成：蚀刻剂组合物包含0.1重量％至25重量％的过二硫酸铵，0.1重量％至25重量％的有机酸，0.01重量％至5重量％的螯合剂，0.01重量％至5重量％的氟化物，0.01重量％ 5重量％氯化物化合物，0.01重量％至2重量％的唑化合物和水。氯化物为盐酸（HCl），氯化铵（NH4Cl），氯化钾（KCl），氯化铁（III），氯化钠（NaCl），高氯酸铵（NH4ClO4），高氯酸钾（NH4ClO4），高氯酸钠（Na4ClO4）和氯化锌（ZnCl2）。

2. 发明授权

KR101776923B1 식각액 조성물, 이를 이용한 금속 패턴의 형성 방법 및 표시 기판의 제조 방법 有权
公开(公告)号：KR101776923B1
公开(公告)日：2017-09-11
申请号：KR1020110078297
申请日：2011-08-05
申请人： 삼성디스플레이 주식회사 , 주식회사 동진쎄미켐
发明人： 김인배 , 정종현 , 박지영 , 김선일 , 정재우 , 김상갑 , 김상우 , 이기범 , 이대우 , 조삼영
IPC分类号： C23F1/14 , C23F1/02 , H05K1/09 , H05K3/06
CPC分类号： C23F1/18 , C09K13/08 , C23F1/26 , H01L21/32134 , H01L27/124
摘要： 구리막을식각하는식각액조성물, 이를이용한금속패턴의제조방법및 표시기판의제조방법에서, 식각액조성물은 0.1 중량% 내지 25 중량%의과산화이황산암모늄(ammonium persulfate), 0.1 중량% 내지 25 중량%의유기산, 0.01 중량% 내지 5 중량%의킬레이트제, 0.01 중량% 내지 5 중량%의불화물계화합물, 0.01 중량% 내지 5 중량%의염화물계화합물, 0.01 중량% 내지 2 중량%의아졸계화합물및 여분의물을포함한다. 이에따라, 구리막을안정적으로식각하여금속패턴및 표시기판의제조신뢰성을향상시킬수 있다.

3. 发明公开

KR1020140056862A 박막 트랜지스터 표시판 및 그 제조 방법 审中-实审
标题翻译：薄膜传感器阵列及其制造方法
公开(公告)号：KR1020140056862A
公开(公告)日：2014-05-12
申请号：KR1020120123209
申请日：2012-11-01
申请人： 삼성디스플레이 주식회사
发明人： 박지영 , 정유광 , 김상갑 , 이준걸
IPC分类号： G02F1/1368 , H01L29/786
CPC分类号： H01L27/1259 , G02F1/134363 , G02F1/136227 , H01L27/124 , H01L29/66765 , H01L29/78669 , H01L29/78678 , H01L27/1248 , G02F1/1343
摘要： A thin film transistor array panel according to an embodiment of the present invention comprises: a substrate; a gate line which is located on the substrate and includes a gate pad portion; a gate insulating film located on the gate line; a data line including a source electrode and a data pad portion and a drain electrode located on the gate insulating film; a first protective film located on the data line and the drain electrode; a second protective film located on a part of the first protective film; and a third protective film located on the second protective film and a part of the first protective film, wherein the third protective film includes a first film and a second film placed over the first film, an etch rate of the first protective film is substantially same as or slower than an etch rate of the first film of the third protective film, and the etch rate of the first film of the third protective film is slower than an etch rate of the second film of the third protective film.
摘要翻译：根据本发明的实施例的薄膜晶体管阵列面板包括：基板; 栅极线，其位于所述衬底上并且包括栅极焊盘部分; 位于栅极线上的栅极绝缘膜; 数据线，包括位于栅极绝缘膜上的源电极和数据焊盘部分以及漏电极; 位于数据线和漏电极上的第一保护膜; 位于第一保护膜的一部分上的第二保护膜; 以及位于第二保护膜上的第三保护膜和第一保护膜的一部分，其中第三保护膜包括置于第一膜上的第一膜和第二膜，第一保护膜的蚀刻速率基本相同等于或慢于第三保护膜的第一膜的蚀刻速率，并且第三保护膜的第一膜的蚀刻速率比第三保护膜的第二膜的蚀刻速率慢。

4. 发明公开

KR1020120122518A 박막 트랜지스터 표시판 및 그 제조 방법 无效
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：KR1020120122518A
公开(公告)日：2012-11-07
申请号：KR1020110040718
申请日：2011-04-29
申请人： 삼성디스플레이 주식회사
发明人： 오화열 , 서오성 , 박제형 , 최신일 , 우동원 , 박지영 , 송진호 , 김상갑
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1259 , G02F1/136286 , H01L27/124 , H01L27/1248
摘要： PURPOSE: A thin film transistor display plate and a manufacturing method thereof are provided to prevent a haze phenomenon of a transparent electrode by a plasma process using mixed gas with a specific ratio of hydrogen to nitrogen before a protection layer is deposited. CONSTITUTION: A gate structure(121) is formed on a substrate. A gate insulation layer(140) is formed on a gate conductor. A semiconductor, a source electrode(173), and a drain electrode are formed on the gate insulation layer. A transparent electrode is formed on a part of the drain electrode and the gate insulation layer. The substrate is processed with plasma using mixed gas of hydrogen and nitrogen. A protection layer is formed on the plasma processed semiconductor, the source electrode, the drain electrode, and the transparent electrode.
摘要翻译：目的：提供薄膜晶体管显示板及其制造方法，以在保护层沉积之前，通过使用具有特定比例的氢气与氮气的混合气体通过等离子体处理来防止透明电极的雾度现象。构成：在基板上形成栅极结构（121）。栅极绝缘层（140）形成在栅极导体上。在栅极绝缘层上形成半导体，源电极（173）和漏电极。在漏极电极和栅极绝缘层的一部分上形成透明电极。用氢气和氮气的混合气体用等离子体处理衬底。在等离子体处理的半导体，源电极，漏电极和透明电极上形成保护层。

5. 发明授权

KR102017204B1 박막 트랜지스터 표시판 및 그 제조 방법 有权
公开(公告)号：KR102017204B1
公开(公告)日：2019-09-03
申请号：KR1020120123209
申请日：2012-11-01
申请人： 삼성디스플레이 주식회사
发明人： 박지영 , 정유광 , 김상갑 , 이준걸
IPC分类号： G02F1/1368 , H01L29/786

6. 发明公开

KR1020140074479A 표시 기판의 제조 방법 审中-实审
标题翻译：制造显示基板的方法
公开(公告)号：KR1020140074479A
公开(公告)日：2014-06-18
申请号：KR1020120142461
申请日：2012-12-10
申请人： 삼성디스플레이 주식회사
发明人： 정유광 , 박지영 , 최신일 , 김상갑
IPC分类号： G02F1/1368 , G09F9/00
CPC分类号： H01L27/124 , G02F1/133707 , H01L27/1248 , H01L27/1288
摘要： According to the present invention, a manufacturing method of a display substrate includes the following steps: forming a gate insulation film on a base substrate on which a gate metal pattern is formed; forming a data metal pattern on the gate insulation film; forming a protection film and an organic film in order on the base substrate on which the data metal pattern is formed; exposing a portion of the organic film to light; and developing the organic film to remove a portion of the organic film overlapped by the data metal pattern and exposing at least a portion of the protection film overlapped by the gate metal pattern. Accordingly, a portion of the organic film is left by exposing the organic film on the data metal pattern to light. Therefore, a problem that a molybdenum layer on the data metal pattern is worn can be solved, and thus reliability of the display substrate is increased.
摘要翻译：根据本发明，显示基板的制造方法包括以下步骤：在形成有栅极金属图案的基底基板上形成栅极绝缘膜; 在栅极绝缘膜上形成数据金属图案; 在其上形成数据金属图案的基底基板上依次形成保护膜和有机膜; 将有机膜的一部分暴露于光; 以及显影所述有机膜以除去与所述数据金属图案重叠的所述有机膜的一部分，并且暴露出与所述栅极金属图案重叠的所述保护膜的至少一部分。因此，有机膜的一部分通过将数据金属图案上的有机膜曝光而残留。因此，可以解决数据金属图案上的钼层磨损的问题，从而提高显示基板的可靠性。

7. 发明公开

KR1020130084717A 식각 조성물 및 이를 이용한 표시 기판의 제조 방법 无效
标题翻译：蚀刻组合物和使用蚀刻组合物制造显示基板的方法
公开(公告)号：KR1020130084717A
公开(公告)日：2013-07-26
申请号：KR1020120005468
申请日：2012-01-18
申请人： 삼성디스플레이 주식회사 , 솔브레인 주식회사
发明人： 김인배 , 정재우 , 김상갑 , 박지영 , 정종현 , 김선일 , 송용성 , 오종현
IPC分类号： C09K13/06 , C09K13/08 , C09K13/04
CPC分类号： C09K13/06 , H01L27/124 , H01L27/1259
摘要： PURPOSE: An etching composition and a manufacturing method of display substrate using the same are provided to prevent crystallization at the low temperature, an excessive side etch, a generation of a residue and etc.; and additionally prevent a damage by rusting of a copper layer, or a copper alloy layer which are included in a data metal pattern or gate metal pattern. CONSTITUTION: An etching composition comprises 0.05 weight %-15 weight % of halogen-containing compound, 0.1 weight %-20 weight % of nitric acid compound, 0.1 weight %-10 weight % of acetic acid compound, 0.1 weight %-10 weight %of ring type amino compound, 0 weight %-50 weight % of polyhydric alcohol and extra water. A manufacturing method of a display substrate comprises: a step of forming a switching element which comprises a gate electrode, a source electrode, and a drain electrode on a substrate; a step of forming a transparent conductive film on the substrate in which of the switching element is formed; a step forming a pixel electrode which is contacted with the drain electrode by patterning the transparent conductive film to the etching composition.
摘要翻译：目的：提供使用其的显示基板的蚀刻组合物和制造方法，以防止在低温下的结晶，过度的侧蚀刻，残留物的产生等; 并且还防止包含在数据金属图案或栅极金属图案中的铜层或铜合金层的生锈的损伤。构成：蚀刻组合物包含0.05重量％-15重量％的含卤素化合物，0.1重量％-20重量％的硝酸化合物，0.1重量％-10重量％的乙酸化合物，0.1重量％-10重量％的环型氨基化合物，0重量％-50重量％的多元醇和额外的水。显示基板的制造方法包括：在基板上形成包括栅电极，源电极和漏电极的开关元件的步骤; 在形成有开关元件的基板上形成透明导电膜的工序; 通过将透明导电膜图案化成蚀刻组合物，形成与漏电极接触的像素电极的步骤。

8. 发明公开

KR1020130065919A 표시 기판 및 이의 제조 방법 审中-实审
标题翻译：显示基板及其制造方法
公开(公告)号：KR1020130065919A
公开(公告)日：2013-06-20
申请号：KR1020110132525
申请日：2011-12-12
申请人： 삼성디스플레이 주식회사
发明人： 여윤종 , 정유광 , 진홍기 , 김상갑 , 박정민 , 박지영
IPC分类号： G02F1/1368 , G02F1/1343
CPC分类号： G02F1/134363 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1288
摘要： PURPOSE: A display substrate and a production method thereof are provided to reduce the number of 'masks used for a display substrate production' patterning the second pixel electrode with a pixel passivation layer and a photo pattern on a pixel passivation layer. CONSTITUTION: A passivation layer(LY2) includes the first hole(H1)' which partially exposes 'a drain electrode(DE). An organic layer is arranged on the passivation layer and contains 'sides of the passivation layer which forms the first hole and the second hole(H2)' which exposes the top close to the side'. The first pixel electrode(PE) is arranged on the organic layer. The second pixel electrode(PE2) is arranged on the top of the first pixel electrode and is electrically connected to the drain electrode through the first hole and the second hole.
摘要翻译：目的：提供显示基板及其制造方法，以减少在像素钝化层上的像素钝化层和照片图案来构图第二像素电极的“用于显示基板生产的掩模”的数量。构成：钝化层（LY2）包括部分地暴露“漏极（DE）”的第一孔（H1）'。有机层布置在钝化层上并包含形成第一孔的钝化层的侧面和暴露顶部靠近侧面的第二孔（H2）。第一像素电极（PE）布置在有机层上。第二像素电极（PE2）布置在第一像素电极的顶部，并且通过第一孔和第二孔电连接到漏电极。

9. 发明公开

KR1020120138290A 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 기판 형성 방법 无效
标题翻译：使用金属接线和薄膜晶体管基板的蚀刻和制造方法
公开(公告)号：KR1020120138290A
公开(公告)日：2012-12-26
申请号：KR1020110057644
申请日：2011-06-14
申请人： 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 정종현 , 김선일 , 박지영 , 송진호 , 김상갑 , 최신일 , 권오병 , 박영철 , 유인호 , 이석준 , 임민기 , 장상훈 , 진영준
IPC分类号： C23F1/44 , C23F1/10 , C09K13/00 , H05K3/06
CPC分类号： H01L21/32134 , C09K13/08 , C23F1/18 , C23F1/26 , H01L27/124 , H01L27/1259 , H01L29/4908
摘要： PURPOSE: An etchant and a metal wiring and thin film transistor substrate producing method using the same are provided to increase the accumulated number of substrates to be treated with the etchant per a predetermined time by adding sulfonic acid for relieving aging. CONSTITUTION: An etchant comprises 0.5 weight%-20 weight% of persulfate, 0.01 weight%-2 weight% of fluorid, 1 weight%-10 weight% of inorganic acid, 0.5 weight%-5 weight% of ring-type aminocompound, 0.1 weight%-10.0 weight% of sulfonic acid, 0.1 weight%-10 weight% of organic acid or/and salt thereof, and the remaining amount of water. The sulfonic acid includes one or more selected from the group consisting of K2S2O5, Na2S2O5, and (NH4)2S2O5.
摘要翻译：目的：提供一种蚀刻剂和使用该蚀刻剂的金属布线和薄膜晶体管基板的制造方法，以通过添加磺酸来缓和老化来增加用蚀刻剂每隔一定时间处理的基板的累积数量。构成：蚀刻剂包括0.5重量％-20重量％的过硫酸盐，0.01重量％-2重量％的氟化物，1重量％-10重量％的无机酸，0.5重量％-5重量％的环型氨基化合物，0.1 重量％-10.0重量％的磺酸，0.1重量％-10重量％的有机酸或/或其盐和剩余量的水。磺酸包括选自K2S2O5，Na2S2O5和（NH4）2S2O5中的一种或多种。

10. 发明公开

KR1020100103059A 배선의 접촉부 및 그 제조 방법 有权
标题翻译：接线方式及其制造方法
公开(公告)号：KR1020100103059A
公开(公告)日：2010-09-27
申请号：KR1020090021476
申请日：2009-03-13
申请人： 삼성디스플레이 주식회사
发明人： 김주한 , 송기용 , 양동주 , 김희준 , 윤여건 , 조성헌 , 김창훈 , 김재홍 , 정유광 , 이기엽 , 김상갑 , 여윤종 , 최신일 , 박지영
IPC分类号： H01L29/786 , H01L21/28
CPC分类号： H01L24/05 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L2224/04042 , H01L2924/14 , H01L2924/1426 , G02F1/13452 , H01L27/1248 , H01L2924/00
摘要： PURPOSE: A contact part of a wire and a manufacturing method thereof are provided to use a metal layer which is formed with an electroless plating method when a gate line and a data line have a defect. CONSTITUTION: A conductive layer(15) is located on an insulating substrate(10) made of a glass or plastic. The conductive layer comprises a first conductive film(12) and a second conductive film(14). The first conductive film is made of a metal which has low resistivity, such as an aluminum series gold, a silver series metal, or a copper series metal, in order to reduce voltage drop. The second conductive film is made of a material, which has high physical, chemical, and electrical contact property with a different layer, like molybdenum class metal, chrome, tantalum, and titanium.
摘要翻译：目的：提供线的接触部分及其制造方法，以在栅极线和数据线具有缺陷时使用由化学镀方法形成的金属层。构成：导电层（15）位于由玻璃或塑料制成的绝缘基板（10）上。导电层包括第一导电膜（12）和第二导电膜（14）。为了降低电压降，第一导电膜由具有低电阻率的金属例如铝系列金，银系金属或铜系金属制成。第二导电膜由与不同层（如钼类金属，铬，钽和钛）具有高物理，化学和电接触性的材料制成。

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