专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014140067A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014140067A
公开(公告)日：2014-07-31
申请号：JP2014076811
申请日：2014-04-03
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , MIKI SATOSHI , YAMADA SHINJI , KUSHIBE MITSUHIRO , KANEKO KATSURA
IPC分类号： H01L33/38 , H01L33/22 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with improved light extraction efficiency.SOLUTION: A semiconductor light-emitting element 140 includes: a substrate 70; a first semiconductor layer 10 spaced apart from the substrate 70 in the stacking direction and including a first region and a second region adjacent to each other in a crossing direction of the stacking direction; a second semiconductor layer 20; a light-emitting layer 30; a first electrode 50 provided between the second region and the substrate 70 and in contact with the second region; a second electrode 60 provided between the second semiconductor layer 20 and the substrate 70 and in contact with the second semiconductor layer 20; a metal portion provided between the second electrode 60 and the substrate 70 and electrically connecting the second electrode 60 and the substrate 70; a pad 55 in juxtaposition to the first semiconductor layer 10 in the crossing direction of the stacking direction, spaced apart from the substrate 70 in the stacking direction, and connected to the first electrode 50; and an insulating layer 40 located between the first electrode 50 and the light-emitting layer 30, between the first electrode 50 and the second semiconductor layer 20, between the first electrode 50 and the second electrode 60, and between the first electrode 50 and the metal portion. When viewed in the stacking direction, the insulating layer 40 is not overlapped with the second electrode 60.
摘要翻译：要解决的问题：提供具有改善的光提取效率的半导体发光元件。解决方案：半导体发光元件140包括：基板70; 第一半导体层10，其在层叠方向上与基板70隔开，并且包括沿堆叠方向的交叉方向彼此相邻的第一区域和第二区域; 第二半导体层20; 发光层30; 设置在第二区域和基板70之间并与第二区域接触的第一电极50; 设置在第二半导体层20和基板70之间并与第二半导体层20接触的第二电极60; 设置在第二电极60和基板70之间并且电连接第二电极60和基板70的金属部分; 与层叠方向的交叉方向并列配置在第一半导体层10上的衬垫55，与衬底70沿层叠方向隔开并与第一电极50连接; 以及位于第一电极50和发光层30之间，第一电极50和第二半导体层20之间，第一电极50和第二电极60之间以及第一电极50和第二电极50之间的绝缘层40。金属部分。当从堆叠方向观察时，绝缘层40不与第二电极60重叠。

2. 发明专利

JP2013251572A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013251572A
公开(公告)日：2013-12-12
申请号：JP2013168118
申请日：2013-08-13
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/40 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that highly and simultaneously satisfies high luminance, high efficiency, and high reliability.SOLUTION: The semiconductor light-emitting element includes: a stacked structure having a first semiconductor layer, a second semiconductor layer, and a light-emitting layer; and an electrode having a first metal layer provided on the side of the second semiconductor layer opposite to the side on which the light-emitting layer is provided and containing silver or silver alloy, and a second metal layer provided on the side of the first metal layer opposite to the side on which the second semiconductor layer is provided and containing an element of at least one of platinum, palladium, and rhodium. The second semiconductor layer is provided in contact with the interface between the second semiconductor layer and the first metal layer, and includes an interface layer containing silver. The density of the element in a region including the interface between the first metal layer and the second semiconductor layer is higher than the density of the element in a region apart from the interface of the first metal layer. The average particle diameter of silver in the first metal layer is smaller than or equal to 0.3 μm.
摘要翻译：要解决的问题：提供一种高度同时满足高亮度，高效率和高可靠性的半导体发光元件。解决方案：半导体发光元件包括：具有第一半导体层，第二半导体层层和发光层; 以及具有第一金属层的电极，设置在与设置有发光层的一侧相反的第二半导体层的一侧并且包含银或银合金，以及设置在第一金属侧的第二金属层层，其与设置有第二半导体层的一侧相对，并且包含铂，钯和铑中的至少一种的元素。第二半导体层设置成与第二半导体层和第一金属层之间的界面接触，并且包括含有银的界面层。包括第一金属层和第二半导体层之间的界面的区域中的元素的密度高于与第一金属层的界面分开的区域中的元素的密度。第一金属层中的银的平均粒径小于或等于0.3μm。

3. 发明专利

JP2013243405A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013243405A
公开(公告)日：2013-12-05
申请号：JP2013167450
申请日：2013-08-12
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA
IPC分类号： H01L33/36 , H01L33/50
CPC分类号： H01L2224/16145 , H01L2224/73265 , H01L2924/181 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high light extraction efficiency.SOLUTION: A semiconductor light-emitting element 10 includes: a first semiconductor layer 120; a second semiconductor layer 140; a light-emitting layer 130 provided between the first semiconductor layer 120 and the second semiconductor layer 140; a first electrode 160 connected to the first semiconductor layer 120; and a second electrode 150 which is provided to be laminated on the second semiconductor layer 140, includes a layer of at least either silver or a silver alloy on the side facing the second semiconductor layer 140, and has voids in the layer which have a width equal to or less than the emission wavelength of the light-emitting layer 130 and exist along a grain boundary of silver or the silver alloy.
摘要翻译：要解决的问题：提供一种具有高光提取效率的半导体发光元件。解决方案：半导体发光元件10包括：第一半导体层120; 第二半导体层140; 设置在第一半导体层120和第二半导体层140之间的发光层130; 连接到第一半导体层120的第一电极160; 并且被设置为层压在第二半导体层140上的第二电极150包括在面向第二半导体层140的一侧上的银或银合金中的至少一层，并且在该层中具有宽度的空隙等于或小于发光层130的发射波长并沿着银或银合金的晶界存在。

4. 发明专利

JP2013065849A Semiconductor element, wafer, method of manufacturing semiconductor element, and method of manufacturing wafer 有权
标题翻译：半导体元件，波形，制造半导体元件的方法和制造方法
公开(公告)号：JP2013065849A
公开(公告)日：2013-04-11
申请号：JP2012195590
申请日：2012-09-05
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSHIBE MITSUHIRO , OBA YASUO , KATSUNO HIROSHI , KANEKO KATSURA , YAMADA SHINJI
IPC分类号： H01L33/32 , H01L31/0264 , H01L31/10 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element having high efficiency, a wafer, a method of manufacturing the semiconductor element, and a method of manufacturing the wafer.SOLUTION: The semiconductor element includes an n-type first layer, a p-type second layer, a light-emitting part, a first stack, and a second stack. The light-emitting part is provided between the first layer and the second layer. The first stack is provided between the first layer and the light-emitting part, and includes third layers of AlGaInN and fourth layers of GaInN that are alternately stacked. The second stack is provided between the first layer and the first stack, and includes a plurality of fifth layers and sixth layers of GaInN that are alternately stacked. The first stack has recesses provided on a surface of the first stack on the light-emitting part side. In at least parts of the recesses, a part of the light-emitting part is embedded. The side surface of each recess surrounds dislocation penetrating through the first stack. The In composition ratio around the dislocation is lower than that of the other portion.
摘要翻译：要解决的问题：提供一种具有高效率的半导体元件，晶片，半导体元件的制造方法以及晶片的制造方法。解决方案：半导体元件包括n型第一层，p型第二层，发光部分，第一堆叠和第二堆叠。发光部分设置在第一层和第二层之间。第一叠层设置在第一层和发光部之间，并且包括交替层叠的AlGaInN和GaInN的第三层的第三层。第二堆叠设置在第一层和第一堆叠之间，并且包括交替层叠的多个第五层和第六层GaInN。第一堆叠具有设置在发光部分侧的第一堆叠的表面上的凹部。在凹部的至少一部分中，发光部分的一部分被嵌入。每个凹槽的侧表面包围贯穿第一叠层的位错。位错周围的In组成比低于另一部分的In组成比。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012235152A Semiconductor light-emitting element and semiconductor light-emitting device 有权
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：JP2012235152A
公开(公告)日：2012-11-29
申请号：JP2012157762
申请日：2012-07-13
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/38 , H01L21/28 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a semiconductor light-emitting device having high light extraction efficiency and high reproducibility of light output.SOLUTION: The semiconductor light-emitting element includes: a laminated structure having a first semiconductor layer, a second semiconductor layer, and a luminous layer provided between the first and second semiconductor layers; a first electrode connected to the first semiconductor layer; a second electrode connected to and provided on the second semiconductor layer, and comprising a first film having relatively low contact resistance to the second semiconductor layer, and a second film provided at the periphery of the first film on the second semiconductor layer and having reflection characteristics and relatively high contact resistance to the second semiconductor layer; and a dielectric film having a part between a part of the second film and the second semiconductor layer. The distance from the edge outside the second film to the first film is smaller at the center than at the periphery of the first main surface.
摘要翻译：要解决的问题：提供一种具有高光提取效率和高光再现性的半导体发光元件和半导体发光器件。解决方案：半导体发光元件包括：具有第一半导体层，第二半导体层和设置在第一和第二半导体层之间的发光层的层叠结构; 连接到所述第一半导体层的第一电极; 连接到所述第二半导体层并且设置在所述第二半导体层上的第二电极，并且包括与所述第二半导体层具有相对低的接触电阻的第一膜，以及设置在所述第二半导体层上的所述第一膜周围的具有反射特性的第二膜和对第二半导体层的相对高的接触电阻; 以及电介质膜，其具有在所述第二膜的一部分和所述第二半导体层之间的一部分。从第二膜外侧的边缘到第一膜的距离在中心处比在第一主表面的周边处更小。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2011187872A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2011187872A
公开(公告)日：2011-09-22
申请号：JP2010054293
申请日：2010-03-11
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KUSHIBE MITSUHIRO , KANEKO KATSURA , YAMADA SHINJI
IPC分类号： H01L33/22 , H01L33/10 , H01L33/32
CPC分类号： H01L33/382 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a highly-efficient semiconductor light-emitting element. SOLUTION: The semiconductor light-emitting element includes a first conductivity-type first semiconductor layer 10, a second conductivity-type second semiconductor layer 20; a luminous layer 30 provided between the first semiconductor layer 10 and the second semiconductor layer 20; a third semiconductor layer 15, that is provided at a side opposite to the luminous layer 30 of the first semiconductor layer 10, has an impurity concentration lower than that of the first semiconductor layer 10, and includes an opening for exposing one portion of the first semiconductor layer 10; and a first electrode 40, abutting against the first semiconductor layer 10 via an opening 18. The third semiconductor layer 15 is provided on a surface at a side opposite to the first semiconductor layer 10 and further includes a surface-roughening part 17, including irregularities 17p larger than a wavelength in the third semiconductor layer 15 of a peak wavelength of emission light radiated from the luminous layer 30. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种高效的半导体发光元件。解决方案：半导体发光元件包括第一导电型第一半导体层10，第二导电型第二半导体层20，设置在第一半导体层10和第二半导体层20之间的发光层30; 设置在与第一半导体层10的发光层30相反的一侧的第三半导体层15的杂质浓度低于第一半导体层10的杂质浓度，并且包括用于暴露第一半导体层10的一部分的开口半导体层10; 以及经由开口18与第一半导体层10抵接的第一电极40.第三半导体层15设置在与第一半导体层10相反的一侧的表面上，并且还包括表面粗糙化部17，其包括不规则 17p大于从发光层30发射的发射光的峰值波长的第三半导体层15中的波长。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010062274A Semiconductor light-emitting element and its manufacturing method 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2010062274A
公开(公告)日：2010-03-18
申请号：JP2008225453
申请日：2008-09-03
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA , KUSHIBE MITSUHIRO
IPC分类号： H01L33/32 , H01L33/36
CPC分类号： H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05171 , H01L2224/05181 , H01L2224/05184 , H01L2224/05568 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2924/00014 , H01L2924/01013 , H01L2924/013 , H01L2924/01078
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element, capable of efficiently taking out light generated in a light-emitting layer to the outside thereof, and the manufacturing method of the same. SOLUTION: The semiconductor light emitting element, including a laminated structural body having an n-type semiconductor layer, a p-type semiconductor layer and the light emitting layer provided between the n-type semiconductor layer and the p-type semiconductor layer, a first electrode, connected to the n-type semiconductor layer and comprising either one of at least silver and silver alloy, and a second electrode, connected to the p-type semiconductor layer, is provided. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：为了提供能够有效地将发光层中产生的光向其外部取出的半导体发光元件及其制造方法。解决方案：包括具有n型半导体层的层叠结构体，p型半导体层和设置在n型半导体层和p型半导体层之间的发光层的半导体发光元件提供连接到n型半导体层并且包括至少银和银合金中的任一种的第一电极和连接到p型半导体层的第二电极。版权所有（C）2010，JPO＆INPIT

8. 发明专利

JP2009049266A Semiconductor light-emitting device and semiconductor light-emitting apparatus 有权
标题翻译：半导体发光器件和半导体发光器件
公开(公告)号：JP2009049266A
公开(公告)日：2009-03-05
申请号：JP2007215596
申请日：2007-08-22
申请人： Toshiba Corp , 株式会社東芝
发明人： KATSUNO HIROSHI , OBA YASUO , KANEKO KATSURA
IPC分类号： H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L33/40 , H01L33/32 , H01L33/387 , H01L33/44 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/16145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014 , H01L2924/181 , H01L2224/05599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide high brightness semiconductor light-emitting device and semiconductor light-emitting apparatus which can enhance reliability by controlling impairment. SOLUTION: The semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer provided between the first and second semiconductor layers, a first electrode provided on the first semiconductor layer, a second electrode having a first metal film provided on the second semiconductor layer and containing at least any one of silver and a silver alloy and a second metal film provided on the first metal film and substantially containing no silver, and a dielectric film spaced from the first metal film on the second semiconductor layer. The second metal film covers the first metal film, at least a part of the dielectric film, and the surface of the second semiconductor layer exposed between the first metal film and the dielectric film. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供通过控制损伤来提高可靠性的高亮度半导体发光器件和半导体发光器件。解决方案：半导体发光器件包括第一半导体层，第二半导体层，设置在第一和第二半导体层之间的发光层，设置在第一半导体层上的第一电极，第二电极，设置在所述第二半导体层上并且包含银和银合金中的至少一种的第一金属膜和设置在所述第一金属膜上并且基本上不含银的第二金属膜，以及与所述第一金属膜间隔开的电介质膜第二半导体层。第二金属膜覆盖第一金属膜，电介质膜的至少一部分以及暴露在第一金属膜和电介质膜之间的第二半导体层的表面。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2014175496A Semiconductor light-emitting element and method of manufacturing the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2014175496A
公开(公告)日：2014-09-22
申请号：JP2013047253
申请日：2013-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO HIROSHI , MIKI SATOSHI , KATSUNO HIROSHI , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/20
CPC分类号： H01L33/58 , H01L33/0079 , H01L33/02 , H01L33/08 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/44 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that allows preventing warpage and cracking while suppressing reduction in light extraction efficiency, and to provide a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including a laminated body and an optical portion. The laminated body includes first and second semiconductor layers and a light-emitting layer. The second semiconductor layer is spaced apart from the first semiconductor layer in a first direction. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The optical portion is stacked with the laminated body in the first direction. The optical portion extends in a direction perpendicular to the first direction. The length of the optical portion in the first direction is longer than that of the first semiconductor layer in the first direction. The area of the optical portion projected on a plane perpendicular to the first direction is smaller than the area projected on a plane of the laminated body. At least a part of the optical portion contains Al. The Al concentration of at least a part of the optical portion is higher than that of the laminated body.
摘要翻译：要解决的问题：提供一种能够在抑制光提取效率降低的同时防止翘曲裂纹的半导体发光元件，并提供其制造方法。解决方案提供一种半导体发光元件，其包括：层叠体和光学部。层叠体包括第一和第二半导体层和发光层。第二半导体层在第一方向上与第一半导体层间隔开。发光层设置在第一半导体层和第二半导体层之间。光学部分沿着第一方向与层叠体层叠。光学部分沿垂直于第一方向的方向延伸。第一方向的光学部分的长度比第一方向上的第一半导体层的长度长。投影在与第一方向垂直的平面上的光学部分的面积比投影在层叠体的平面上的面积小。光学部分的至少一部分包含Al。光学部分的至少一部分的Al浓度高于层叠体的Al浓度。

10. 发明专利

JP2013123034A Method of manufacturing semiconductor light-emitting element 有权
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2013123034A
公开(公告)日：2013-06-20
申请号：JP2012186163
申请日：2012-08-27
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO TOSHIHIDE , KATSUNO HIROSHI , SATO TAISUKE , NUNOUE SHINYA
IPC分类号： H01L33/40 , H01L21/28 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting element having an electrode with low contact resistance and high reflectance.SOLUTION: A method of manufacturing a semiconductor light-emitting element includes: a step of forming an Ag film on a semiconductor stack portion including a light-emitting layer and a nitride semiconductor; a first heat treatment step of performing heat treatment to the Ag film in an atmosphere containing nitride; and a second heat treatment step of performing heat treatment to the Ag film in an atmosphere containing oxygen after the first heat treatment step. The temperature of the heat treatment of the first heat treatment step is higher than the temperature of the heat treatment of the second heat treatment step.
摘要翻译：解决的问题：提供一种具有低接触电阻和高反射率的电极的半导体发光元件的制造方法。解决方案：一种制造半导体发光元件的方法包括：在包括发光层和氮化物半导体的半导体堆叠部分上形成Ag膜的步骤; 对含有氮化物的气氛中的Ag膜进行热处理的第一热处理工序; 以及第二热处理工序，在第一热处理工序之后，在含有氧的气氛中对Ag膜进行热处理。第一热处理工序的热处理温度高于第二热处理工序的热处理温度。版权所有（C）2013，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式