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1. 发明专利

JP2015013321A 研削ホイール审中-公开
标题翻译：砂轮
公开(公告)号：JP2015013321A
公开(公告)日：2015-01-22
申请号：JP2013139637
申请日：2013-07-03
申请人：株式会社ディスコ , Disco Abrasive Syst Ltd
发明人： AOKI MASASHI , MASUDA TAKATOSHI
IPC分类号： B24D7/00
摘要：【課題】研削砥石にかかる負荷を少なくして研削砥石に目つぶれや目詰まりが発生することを抑制することを目的とする。【解決手段】研削ホイール30は、ホイールマウント20に装着する装着面33を有する環状のホイール基台31と装着面33の反対面となる砥石装着面38に環状に配設される研削砥石40とホイール基台31の内部に配設される環状の超音波振動子50と、を少なくとも備え、研削砥石40は、ホイール基台31の中心を重心とした非真円状に固着されており、研削砥石40によって板状ワークを研削するとき、超音波振動子50から発振される超音波振動が研削砥石40に伝播され、研削砥石40が水平方向に振動しながら板状ワークWを研削することができる。これにより、板状ワークWの研削時に研削砥石40にかかる負荷を少なくして目つぶれや目詰まりの発生を抑制でき、研削ホイール30の寿命を長くすることができる。【選択図】図4
摘要翻译：要解决的问题：通过减少施加在研磨砂轮上的负荷来防止在研磨磨石时发生玻璃和堵塞。解决方案：砂轮30至少包括：具有安装表面33的环形轮毂31 车轮安装座20; 研磨砂轮40，环形地设置在与安装表面33相对的砂轮安装表面38上; 以及设置在车轮基座31的内部的环状的超声波换能器50.磨轮磨石40作为重心围绕轮毂31的中心固定为非圆形。当通过研磨砂轮40研磨板状工件时，从超声波振子50发射的超声波振动传递到研磨砂轮40，并且研磨砂轮40可以在水平方向振动的同时研磨板状工件W. 因此，当板状工件W被磨削时，施加在研磨砂轮40上的载荷减小，从而可以抑制玻璃和堵塞并延长砂轮30的使用寿命。

2. 发明专利

JP2009094326A Method of grinding wafer 审中-公开
标题翻译：研磨方法
公开(公告)号：JP2009094326A
公开(公告)日：2009-04-30
申请号：JP2007264172
申请日：2007-10-10
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI , WATANABE SHINYA , AOKI SHIGEHIKO , HOSHIKAWA HIROTOSHI , KOBAYASHI YOSHIKAZU , HARADA SEISHI , YAMAMOTO SETSUO
IPC分类号： H01L21/304 , B24B7/22
CPC分类号： B24D7/18 , B24B1/00 , B24B7/228
摘要： PROBLEM TO BE SOLVED: To produce the gettering effect without reducing the bending strength of devices even if the backside of a wafer is ground.
SOLUTION: In a method of grinding a wafer where the backside of a wafer having a plurality of devices formed on the front surface thereof is ground and free movement of heavy metal is suppressed and the bending strength of the devices is maintained at ≥1,000 MPa by the gettering effect, a grinding wheel to be used in the method has such a configuration that a grinding stone is firmly fixed to the free end of a base, the grinding stone being such that diamond abrasive grains having a grain diameter of ≤1 μm are fastened together using vitrified bond. A protection member is pasted to the front surface of the wafer, and the protection member is held on a chuck table. The grinding wheel is turned by turning the chuck table to grind the backside of the wafer by the grinding stone until an average value of the surface roughness of the backside of the wafer becomes ≤0.003 μm and a distortion layer remaining on the backside of the wafer has a thickness of 0.05 μm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使晶片的背面被研磨，也可以在不降低器件的弯曲强度的情况下产生吸气效果。解决方案：在研磨晶片的方法中，其中具有形成在其前表面上的多个器件的晶片的背面被研磨并且重金属的自由移动被抑制，并且器件的弯曲强度保持在≥ 通过吸气效果为1000MPa，在该方法中使用的砂轮具有如下结构：磨石牢固地固定在基座的自由端，研磨石使得具有晶粒直径≤ 1微米用玻璃化粘结固定在一起。保护构件被粘贴到晶片的前表面，并且保护构件保持在卡盘台上。通过转动卡盘台来研磨砂轮，通过研磨石研磨晶片的背面直到晶片背面的表面粗糙度的平均值变为≤0.003μm，并且残留在晶片背面的失真层厚度为0.05μm。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007266352A Wafer processing method 审中-公开
标题翻译： WAFER加工方法
公开(公告)号：JP2007266352A
公开(公告)日：2007-10-11
申请号：JP2006090097
申请日：2006-03-29
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI
IPC分类号： H01L21/304 , H01L21/02 , H01L21/301
CPC分类号： H01L21/67132 , H01L21/67092 , H01L21/68707
摘要： PROBLEM TO BE SOLVED: To prevent reduction of the yield of devices by ensuring a device region to the maximum by positively processing only an external circumferential reinforcing portion, in processing the external circumferential reinforcing portion around the device region to planarize each of a wafer. SOLUTION: The circular convex portion 6 of the external circumferential reinforcing portion 5a is cut while reciprocating a cutting blade 222 having a rotary shaft parallel to a holding surface 201a along a rotary shaft direction, and while rotating a wafer 1 held on a chuck table 201. In this way, the external circumferential reinforcing portion 5a is processed into a thickness same as or lower than that of the device region 4. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题为了通过仅仅正面地加工外周加强部来确保装置区域的最大限度，为了防止装置的产量降低，在装置区域周围的外周加强部的加工中，使晶圆。解决方案：外周加强部分5a的圆形凸部6沿着旋转轴方向与具有平行于保持表面201a的旋转轴的切割刀222一起往复移动，同时使保持在保持表面201a上的晶片1旋转以这种方式，外周加强部分5a被加工成与装置区域4的厚度相同或更低的厚度。（C）2008，JPO＆INPIT

4. 发明专利

JP2007173487A Method of processing wafer and device 有权
标题翻译：加工方法和装置
公开(公告)号：JP2007173487A
公开(公告)日：2007-07-05
申请号：JP2005368694
申请日：2005-12-21
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： MASUDA TAKATOSHI
IPC分类号： H01L21/304
CPC分类号： B24B7/228 , B24B27/0076 , H01L21/02035
摘要： PROBLEM TO BE SOLVED: To provide a wafer processing method and a device wherein a processing speed is increased so as to improve productivity when a barrel-shaped wafer is ground, and the consumption of tooling is reduced.
SOLUTION: The surface of a wafer 1 is attracted to a chuck table 34, and its whole rear surface is roughly ground by a first grinding unit. Then, the whole rear surface of the wafer 1 is subjected to a finishing grinding process carried out through a second finishing unit 40B, and the device region 1a of the wafer 1 is subjected to a semi-finishing grinding process. Then, the device region 1b is subjected to a finishing grinding process carried out through a third grinding unit.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种晶片处理方法和其中提高处理速度以便当桶形晶片被研磨时提高生产率的装置，并且减少了工具的消耗。解决方案：晶片1的表面被吸引到卡盘台34，并且其整个后表面被第一研磨单元大致磨削。然后，通过第二精轧单元40B对晶片1的整个后表面进行精加工研磨处理，对晶片1的装置区域1a进行半精加工研磨处理。然后，对装置区域1b进行通过第三研磨单元进行的精加工研磨处理。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2011159707A Method of grinding workpiece 审中-公开
标题翻译：研磨工作方法
公开(公告)号：JP2011159707A
公开(公告)日：2011-08-18
申请号：JP2010018590
申请日：2010-01-29
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI , YAMASHITA SHINJI
IPC分类号： H01L21/304 , B24B7/22 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a method of grinding a workpiece without causing any damage thereto.
SOLUTION: The method of grinding the workpiece includes an arrangement step of arranging the workpiece on an adhesive sheet having an adhesive layer formed on a base material so that the surface side thereof abuts against the adhesive layer, a thinning step of thinning the workpiece arranged on the adhesive sheet to have a predetermined thickness by grinding the backside thereof while curing the adhesive layer by cooling the adhesive sheet, and a removing step of removing the workpiece subjected to thinning from the adhesive sheet.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种研磨工件而不造成任何损坏的方法。解决方案：研磨工件的方法包括将工件布置在具有形成在基材上的粘合剂层的粘合片以使其表面侧抵靠粘合剂层的布置步骤，通过研磨其背面并通过冷却粘合片固化粘合剂层而将布置在粘合片上的工件设置成具有预定厚度的工件，以及从粘合片除去被减薄的工件的去除步骤。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010137338A Method and device for grinding wafer 有权
标题翻译：研磨砂轮的方法和装置
公开(公告)号：JP2010137338A
公开(公告)日：2010-06-24
申请号：JP2008317237
申请日：2008-12-12
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： MASUDA TAKATOSHI
IPC分类号： B24B7/04 , B24B7/22 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for grinding a wafer capable of improving so-called sticking to the wafer to prevent occurrence of surface burning when grinding the wafer even with a grinding wheel of abrasive grains with fine grain sizes.
SOLUTION: In the method for grinding the wafer, a chuck table holding the wafer on a holding surface is rotated, and the grinding wheel is rotated and fed for grinding toward the wafer in a direction perpendicular to the holding surface of the chuck table. When a grinding surface of the grinding wheel is brought into contact with the wafer held on the holding surface of the chuck table, the grinding wheel and the chuck table are relatively moved in a prescribed amount in parallel with the holding surface and positioned so that the grinding surface of the grinding wheel can pass through the center of the wafer. Afterwards, the grinding wheel is fed for grinding to an end position of grind feeding.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于研磨晶片的方法和装置，其能够改善所谓的粘附到晶片上，以防止即使用具有细晶粒的磨粒的砂轮研磨晶片时发生表面燃烧大小。解决方案：在用于研磨晶片的方法中，将保持晶片的夹持台旋转，并且砂轮沿与垂直于卡盘的保持表面的方向朝向晶片进行转动并进行磨削表。当研磨轮的磨削表面与夹在夹盘的保持表面上的晶片接触时，砂轮和夹盘与待保持表面平行地相对移动规定量，砂轮的研磨面可以通过晶片的中心。然后，将砂轮送入研磨至研磨送料的最终位置。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2009141176A Method of grinding wafer 有权
标题翻译：研磨方法
公开(公告)号：JP2009141176A
公开(公告)日：2009-06-25
申请号：JP2007316795
申请日：2007-12-07
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI , WATANABE SHINYA , YAMAMOTO SETSUO
IPC分类号： H01L21/304 , B24B7/22
摘要： PROBLEM TO BE SOLVED: To increase transverse rupture resistance of a wafer by preventing scratches from occurring on a ground surface when grinding the wafer.
SOLUTION: A wafer W is held at a chuck table 2 in which a holding surface is formed in a conical plane, and is ground by contacting a grinding wheel 440 to a ground surface W3 where grinding streaks 100 are radially formed from a center. Here, a grinding wheel 440 in which diamond abrasive particles whose particle size is 1 μm or less are fixed with vitrified bond is used. The grinding wheel 440 is arranged parallel to such plane as expands from the top of the holding surface of the chuck table 2 to the outer periphery so that the arc in the arrangement direction of the grinding wheel 440 crosses the grinding streaks 100. So, the rotational direction of the grinding wheel 440 comes to be such direction as runs from the rotational center of the chuck table 2 to the outer peripheral side while the rotational direction of the chuck table 2 comes to be such direction as runs from the rotation orbit of the grinding wheel 440 to the rotational center.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过在研磨晶片时防止在地面上发生划痕来增加晶片的横向抗断裂性。解决方案：将晶片W保持在卡盘台2中，其中保持表面形成在锥形平面中，并且通过使研磨轮440与磨削条纹100径向形成的磨削面W3接触而研磨，中央。这里，使用其中粒径为1μm以下的金刚石研磨粒子用玻璃化结合固定的砂轮440。砂轮440平行于从卡盘台2的保持面的顶部扩展到外周的平面，使得磨轮440的排列方向上的弧线与研磨条纹100交叉。因此，砂轮440的旋转方向成为从卡盘台2的旋转中心到外周侧的方向，同时卡盘台2的旋转方向成为从旋转轨迹的方向延伸的方向砂轮440到旋转中心。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007266364A Method and apparatus of processing wafer 有权
标题翻译：加工过程的方法与装置
公开(公告)号：JP2007266364A
公开(公告)日：2007-10-11
申请号：JP2006090235
申请日：2006-03-29
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： KAJIYAMA KEIICHI , MASUDA TAKATOSHI
IPC分类号： H01L21/683 , H01L21/304
CPC分类号： H01L21/78 , H01L21/3043 , H01L21/67132 , H01L21/6836 , H01L2221/68327
摘要： PROBLEM TO BE SOLVED: To safely convey a wafer without causing any damage on it when the wafer is conveyed from a process of removing an external circumferential reinforcing portion to a process of singulating semiconductor chips. SOLUTION: After a necessary portion (at least a circular convex portion 6) of the external circumferential reinforcing portion 5a is removed, the wafer 1 is not immediately separated from a chuck table 201 in order to conveying the wafer 1 to a subsequent process. While the wafer 1 is held in the chuck table 201, a dicing tape 31 supported by a dicing frame 32 is stuck on the rear surface of the wafer, and then, the wafer 1 is separated from the chuck table 201 via the dicing frame 32. Then, the wafer 1 is conveyed to a semiconductor chip singulating process. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：当从移除外部周向增强部分的过程传送到切割半导体芯片的过程时，安全地传送晶片而不会对其造成任何损坏。解决方案：在除去外周增强部分5a的必要部分（至少圆形凸部6）之后，晶片1不会从卡盘台201立即分离，以将晶片1输送到随后的处理。当晶片1保持在卡盘台201中时，由切割框架32支撑的切割带31被粘贴在晶片的后表面上，然后晶片1经由切割框架32与卡盘台201分离然后，将晶片1输送到半导体芯片切割处理。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007214343A Separation method of protective tape 有权
标题翻译：保护胶带的分离方法
公开(公告)号：JP2007214343A
公开(公告)日：2007-08-23
申请号：JP2006032362
申请日：2006-02-09
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： MASUDA TAKATOSHI
IPC分类号： H01L21/683
摘要： PROBLEM TO BE SOLVED: To surely separate a protective tape bonded on a wafer and to prevent breakage of the wafer upon separation. SOLUTION: A peeling tape T2 is bonded to the outer peripheral side surface of the protective tape T1 under an overhung state, and the peeling tape T2 is rewound from this state to separate the protective tape T1; consequently, the protective tape T1 is surely separated from the surface of the wafer W. COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2015032818A ウエーハの分割方法有权
标题翻译：波分方法
公开(公告)号：JP2015032818A
公开(公告)日：2015-02-16
申请号：JP2013164095
申请日：2013-08-07
申请人：株式会社ディスコ , Disco Abrasive Syst Ltd , 岩谷産業株式会社 , Iwatani Internatl Corp
发明人： MATSUZAKI SAKAE , MASUDA TAKATOSHI , MAEMOTO NOZOMI , YOSHINO YUTAKA , SENOO TAKEHIKO , AIDA TOSHIHIRO , BIRO TOMOYA
IPC分类号： H01L21/301
CPC分类号： H01L21/78 , H01L21/02076 , H01L21/2686 , H01L21/3065
摘要：【課題】クラックの増長を抑制しつつ、チップ側面に残存した改質領域や破片を除去すること。【解決手段】ウエーハの分割方法は、ストリート(75)に沿ってレーザ光を照射してウエーハ(W)の内部に改質領域(77)を形成する工程と、改質領域を起点としてウエーハを個々のチップ(C)に分割する工程と、ウエーハが投入された処理室内を真空状態にし、処理室内を不活性ガスで満たす工程と、不活性ガスで満たされた処理室内にエッチングガスを導入してチップ側面(78)をエッチングする工程とを有している。【選択図】図5
摘要翻译：要解决的问题：在抑制裂纹发展的同时，除去残留在芯片侧面的修饰区域和碎片。解决方案：晶片分割方法包括以下步骤：在晶片（W）内形成改质区域（77）通过沿着街道（75）用激光束照射所述晶片; 使用改质区域作为起点将晶片分割成单个芯片（C）; 将处理室放入晶片进入真空状态并用惰性气体填充处理室内部; 以及通过将蚀刻气体引入到填充有惰性气体的处理室的内部来蚀刻芯片的侧表面（78）。

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