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1. 发明专利

JP2012191056A Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2012191056A
公开(公告)日：2012-10-04
申请号：JP2011054398
申请日：2011-03-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TANIOKA HISAKAZU , FURUHASHI AKIYUKI , WATANABE TOMOKATSU , KAGAWA YASUHIRO , HINO SHIRO , IMAIZUMI MASAYUKI
IPC分类号： H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can suppress the leakage current density of a gate insulating film formed on the (11-20) plane of a source layer lower.SOLUTION: A silicon carbide semiconductor device comprises: an n-type silicon carbide substrate 2; an n-type silicon carbide drift layer 6 formed on one surface 3 of the silicon carbide substrate 2; a p-type silicon carbide base layer 7 formed at a location including a surface of the silicon carbide drift layer 6; an n-type silicon carbide source layer 8 formed at a location including a surface of the silicon carbide base layer 7; a gate insulating film 18 formed so as to contact the plane substantially parallel to the (11-20) plane of the silicon carbide source layer 8 and the silicon carbide base layer 7; and a source electrode 23 formed so as to contact the silicon carbide source layer 8. The silicon carbide source layer 8 has a first source region 11 formed so as to contact the gate insulating film 18 and a second source region 12 formed so as to contact the source electrode 23. The impurity concentration of the first source region 11 is set to be lower than that of the second source region 12.
摘要翻译：解决的问题：提供一种能够抑制形成在源极（11-20）面上的栅极绝缘膜的漏电流密度的碳化硅半导体器件。解决方案：碳化硅半导体器件包括：n型碳化硅衬底2; 形成在碳化硅基板2的一个表面3上的n型碳化硅漂移层6; 形成在包括碳化硅漂移层6的表面的位置处的p型碳化硅基底层7; 形成在包括碳化硅基底层7的表面的位置处的n型碳化硅源层8; 形成为与碳化硅源层8和碳化硅基层7的（11-20）面大致平行的面接触的栅极绝缘膜18; 以及形成为与碳化硅源层8接触的源电极23.碳化硅源极层8具有形成为与栅极绝缘膜18接触的第一源极区域11和形成为接触的第二源极区域12 源极电极23.第一源极区域11的杂质浓度被设定为低于第二源极区域12的杂质浓度。版权所有：（C）2013，JPO＆INPIT

2. 发明专利

JP2012151400A SiC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SiC SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SiC半导体器件及制造SiC半导体器件的方法
公开(公告)号：JP2012151400A
公开(公告)日：2012-08-09
申请号：JP2011010689
申请日：2011-01-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHASHI AKIYUKI , MIURA NARIHISA , WATANABE TOMOKATSU , TANIOKA HISAKAZU , IMAIZUMI MASAYUKI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12
摘要： PROBLEM TO BE SOLVED: To provide an SiC semiconductor device which greatly reduces a trap level on an SiC/SiOinterface, has high dielectric strength and low leakage current, and has stable threshold voltage.SOLUTION: In the SiC semiconductor device which includes an SiC substrate 1, a gate insulating film formed on the SiC substrate 1, and a gate electrode 7 formed on the gate insulating film, the gate insulating film includes a first insulating film 5 that is formed on the SiC substrate 1 and is formed of SiOto which phosphorus is added, and a second insulating film 6 which is formed on the first insulating film 5, and is formed of a material having a lower diffusion rate of a phosphorus element than that of the SiOand a larger band gap than that of the SiC.
摘要翻译：要解决的问题：为了提供大大降低SiC / SiO 2 界面上的陷阱电平的SiC半导体器件，具有高介电强度和低漏电流，以及具有稳定的阈值电压。解决方案：在包括SiC衬底1的SiC半导体器件中，形成在SiC衬底1上的栅极绝缘膜和形成在栅极绝缘膜上的栅极电极7，栅极绝缘膜包括第一绝缘膜5 形成在SiC衬底1上并且由添加有磷的SiO 2 形成的第二绝缘膜6和形成在第一绝缘膜5上的第二绝缘膜6，并且是由磷元素的扩散速率低于SiO 2 的材料形成，并且具有比SiC更大的带隙。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2010056560A Carbon film forming device 审中-公开
标题翻译：碳膜成型装置
公开(公告)号：JP2010056560A
公开(公告)日：2010-03-11
申请号：JP2009267536
申请日：2009-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAWADA TAKAO , WATANABE TOMOKATSU
IPC分类号： H01L21/205 , C23C16/26 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a carbon film forming device capable of forming carbon protection films with high-purity and favorable in a lump.
SOLUTION: The carbon film forming device includes: a vaporizer for vaporizing hydrocarbons containing oxygen; a gas introduction pipe (31) for introducing an oxygen-containing hydrocarbon gas vaporized by the vaporizer; and a film forming furnace (32) for pyrolyzing the oxygen-containing hydrocarbon gas introduced from the gas introduction pipe to form the carbon protection films on all of surfaces of wafers.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成高纯度且有利的块状碳保护膜的碳膜形成装置。解决方案：碳膜形成装置包括：用于蒸发含氧的烃的蒸发器; 用于引入由蒸发器蒸发的含氧烃气体的气体导入管道（31）以及用于热解从气体导入管引入的含氧烃气体以在晶片的所有表面上形成碳保护膜的成膜炉（32）。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009065112A Method of manufacturing silicon carbide semiconductor apparatus 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2009065112A
公开(公告)日：2009-03-26
申请号：JP2008073440
申请日：2008-03-21
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SAWADA TAKAO , WATANABE TOMOKATSU
IPC分类号： H01L21/265 , H01L21/314 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/1608 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a carbon protection film which is formed on a silicone carbide wafer for preventing step bunching and which contains extremely few impurity contaminants and prevents increasing crystal defects due to unbalanced thermal stress to the silicone carbide wafer and to obtain a method of manufacturing a silicone carbide semiconductor apparatus capable of realizing stability of quality and improvement of yield. SOLUTION: A method of manufacturing a silicon carbide semiconductor apparatus includes a step of ion-implanting an impurity in a surface of a silicon carbide wafer (1 and 2); a step of forming a carbon protection film (6) of a predetermined thickness over the entire surface of the silicon carbide wafer after ion implantation with the impurity, by a chemical vapor deposition method that forms a film by pyrolyzing a hydrocarbon gas; and a step of annealing the silicon carbide wafer (1 and 2) formed with the carbon protection film (6). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成碳硅保护膜的方法，其形成在硅碳化硅晶片上以防止步骤聚束并且包含极少量的杂质污染物并且防止由于对硅树脂的不均匀的热应力引起的晶体缺陷的增加并且获得能够实现质量稳定性和产率提高的硅碳化物半导体装置的制造方法。解决方案：制造碳化硅半导体器件的方法包括在碳化硅晶片（1和2）的表面中离子注入杂质的步骤; 通过利用通过热解烃气体形成膜的化学气相沉积法在碳化硅晶片的整个表面上形成具有预定厚度的碳保护膜（6）的步骤; 以及对由碳保护膜（6）形成的碳化硅晶片（1和2）进行退火的步骤。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008294048A Manufacturing method of silicon carbide semiconductor device, and silicon carbide semiconductor device manufactured by means of the method 有权
标题翻译：硅碳化硅半导体器件的制造方法和由该方法制造的碳化硅半导体器件
公开(公告)号：JP2008294048A
公开(公告)日：2008-12-04
申请号：JP2007135311
申请日：2007-05-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： WATANABE AKIHIRO , YUYA NAOKI , OTSUKA KENICHI , WATANABE HIROSHI , NAKAO YUKIYASU , WATANABE TOMOKATSU
IPC分类号： H01L29/12 , H01L21/28 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device which is free from an increase in electric resistance between a source electrode and a well region and can obtain a stable low-resistance contact region if a silicon carbide layer for forming a channel layer is either over-etched or under-etched.
SOLUTION: The manufacturing method of the silicon carbide semiconductor layer includes a step of forming a contact region 8 with a second conductivity type on a front layer of a first silicon carbide layer 2 with a first conductivity type serving as a drift layer 2A, a step of forming a second silicon carbide layer 9 with a first conductivity type serving as a channel layer 9A on a surface of the first silicon carbide layer 2, a step of etching the second silicon carbide layer 9 formed on the contact region 8 and a step of ion-implanting (D) impurities with a second conductivity type toward the contact region 8 after etching the second silicon carbide layer 9.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种在源极和阱区之间不增加电阻的碳化硅半导体器件的制造方法，并且如果碳化硅可以获得稳定的低电阻接触区域用于形成沟道层的层被过蚀刻或欠蚀刻。解决方案：碳化硅半导体层的制造方法包括在第一碳化硅层2的前层上形成具有第二导电类型的接触区域8的步骤，第一碳化硅层2具有用作漂移层2A的第一导电类型在第一碳化硅层2的表面上形成具有作为沟道层9A的第一导电类型的第二碳化硅层9的步骤，蚀刻形成在接触区域8上的第二碳化硅层9和在蚀刻第二碳化硅层9之后，向接触区域8离子注入（D）具有第二导电类型的杂质的步骤。（C）2009，JPO＆INPIT

6. 发明专利

JP2015060841A 炭化珪素半導体装置の製造方法有权
标题翻译：硅碳化硅半导体器件制造方法
公开(公告)号：JP2015060841A
公开(公告)日：2015-03-30
申请号：JP2013191276
申请日：2013-09-17
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： FURUHASHI AKIYUKI , OKABE HIROAKI , TANAKA TAKANORI , WATANABE TOMOKATSU , IMAIZUMI MASAYUKI
IPC分类号： H01L21/336 , H01L21/66 , H01L29/12 , H01L29/78
摘要：【課題】炭化珪素半導体装置において、イオン注入した不純物の活性化率のばらつきに起因した電気的特性のばらつきを抑制する。【解決手段】炭化珪素半導体装置10のベース領域3は、炭化珪素からなるドリフト層2に不純物をイオン注入して形成され、レトログレードプロファイルの不純物濃度分布を有する。ベース領域3にイオン注入した不純物を電気的に活性化させるための熱処理を行った後、熱処理によりダメージを受けた半導体層の表面層を除去する。このときドリフト層2を除去する厚さは、不純物の活性化率の算出結果に基づいて決定される。【選択図】図3
摘要翻译：要解决的问题：为了抑制由于离子注入杂质的活化速率的波动引起的碳化硅半导体器件的电特性的变动。解决方案：碳化硅半导体器件10包括：形成的基极区域3 通过将杂质离子注入到由碳化硅构成的漂移层2中，并且具有回归曲线的杂质浓度分布。在进行用于电激活注入到基底区域3中的杂质离子的热处理之后，去除被热处理损坏的半导体层的表面层。此时，基于杂质的活化率的计算结果来确定要去除的漂移层2的厚度。

7. 发明专利

JP2014017376A Silicon carbide semiconductor device and method of manufacturing the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2014017376A
公开(公告)日：2014-01-30
申请号：JP2012153783
申请日：2012-07-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： WATANABE TOMOKATSU , MIURA NARIHISA , HINO SHIRO , EBIIKE YUJI , NAKAO YUKIYASU
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12
摘要： PROBLEM TO BE SOLVED: To provide a silicon carbide MOSFET capable of moderating the electric field applied to an oxide film at the time of off.SOLUTION: In a silicon carbide MOSFET, an electric-field relaxation region is provided on the entire surface directly under a gate oxide film in a JFET region. The electric-field relaxation region is formed to shallower than a well region. The impurity concentration of the electric-field relaxation region is set to be higher than the impurity concentration of a region shallower than the electric-field relaxation region in the well region.
摘要翻译：要解决的问题：提供能够调节在关闭时施加到氧化膜的电场的碳化硅MOSFET。解决方案：在碳化硅MOSFET中，在直接下面的整个表面上提供电场弛豫区域 JFET区域中的栅极氧化膜。电场弛豫区形成为比阱区浅。将电场弛豫区域的杂质浓度设定为高于比阱区域的电场弛豫区域浅的区域的杂质浓度。

8. 发明专利

JP2011091186A Method of fabricating silicon carbide semiconductor device 审中-公开
标题翻译：制备碳化硅半导体器件的方法
公开(公告)号：JP2011091186A
公开(公告)日：2011-05-06
申请号：JP2009243034
申请日：2009-10-22
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： FURUHASHI AKIYUKI , TANIOKA HISAKAZU , SAKAI KEIKO , MIURA NARIHISA , WATANABE TOMOKATSU , IMAIZUMI MASAYUKI
IPC分类号： H01L29/78 , H01L21/31 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/76 , H01L29/12
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating a silicon carbide semiconductor device, which achieves high reliability and insulation strength of an SiO
2 film formed on an SiC layer and can control the threshold voltage of the device.
SOLUTION: The method of fabricating a silicon carbide semiconductor device having an SiO
2 film formed on the surface of an SiC layer uses a CVD (Chemical Vapor Deposition) oxide film deposited as the SiO
2 film by a CVD method. After the CVD oxide film is deposited on the surface of the SiC layer, the CVD oxide film and the SiC layer are subjected to a nitriding treatment and a heat treatment under the oxygen atmosphere containing water vapor.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造碳化硅半导体器件的方法，其实现了在SiC层上形成的SiO 2 SBS薄膜的高可靠性和绝缘强度，并且可以控制阈值电压的设备。解决方案：制造在SiC层的表面上形成的具有SiO 2 膜的碳化硅半导体器件的方法使用沉积为SiO 2 膜。在CVD层的表面上沉积CVD氧化膜之后，在含有水蒸气的氧气氛下对CVD氧化膜和SiC层进行氮化处理和热处理。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2009147118A Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2009147118A
公开(公告)日：2009-07-02
申请号：JP2007323059
申请日：2007-12-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： AYA ATSUSHI , WATANABE TOMOKATSU
IPC分类号： H01L21/265 , H01L21/336 , H01L29/12 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a method of heating a silicon carbide semiconductor substrate or the like for uniformly heating the silicon carbide semiconductor substrate for a short period of time by utilizing a fever of a suscepter.
SOLUTION: According to one embodiment, in the method of heating the silicon carbide semiconductor substrate, a silicon carbide semiconductor substrate 1 is heated in the state that plural carbon particles 2 are mounted on the silicon carbide semiconductor substrate 1 by only one layer. At this point, the silicon carbide semiconductor substrate 1 is mounted on a susceptor 13. Moreover, a heat treatment of the silicon carbide semiconductor substrate 1 is carried out by heating the susceptor 13.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种加热碳化硅半导体衬底等的方法，用于通过利用可疑器的发烧在短时间内均匀加热碳化硅半导体衬底。解决方案：根据一个实施例，在加热碳化硅半导体衬底的方法中，碳化硅半导体衬底1在多个碳粒子2被安装在碳化硅半导体衬底1上的状态下被加热仅仅一层。此时，将碳化硅半导体基板1安装在基座13上。此外，通过加热基座13来进行碳化硅半导体基板1的热处理。（C）2009，JPO＆INPIT

10. 发明专利

JP2007299971A Heating device of semiconductor wafer 有权
标题翻译：半导体加热器的加热装置
公开(公告)号：JP2007299971A
公开(公告)日：2007-11-15
申请号：JP2006127307
申请日：2006-05-01
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： WATANABE TOMOKATSU , OTSUKA KENICHI
IPC分类号： H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a heating device of a semiconductor wafer which achieves high throughput, rapid temperature rising and falling of a semiconductor wafer, and heat treatment in a clean space. SOLUTION: The heating device of a semiconductor wafer is constituted of a tubular part 14 with a plurality of holes 14d, a plurality of black body boxes 12, and a plurality of heat sources 13. The black body box 12 can be loaded and unloaded to and from the hollow part 14c of the tubular part 14 through the hole 14d, and is formed of a tray 12a of a black body and a lid 12b of a black body. A semiconductor wafer 20 is arranged inside the black body box 12. The heat source 13 can be loaded and unloaded to and from the hollow part 14c of the tubular part 14 through the hole 14d. In heat treatment, the black body box 12 and the heat source 13 are alternately arranged vertically inside the hollow part 14c. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供半导体晶片的加热装置，其实现高产量，半导体晶片的快速升温和降温，以及在清洁空间中的热处理。解决方案：半导体晶片的加热装置由具有多个孔14d的管状部分14，多个黑体箱12和多个热源13构成。黑体箱12可以被装载并通过孔14d从管状部分14的中空部分14c卸载，并由黑体的托盘12a和黑体的盖12b形成。半导体晶片20布置在黑体箱12的内部。热源13可以通过孔14d装载和从管状部分14的中空部分14c卸载。在热处理中，黑体箱12和热源13在中空部14c的内部交替排列。版权所有（C）2008，JPO＆INPIT

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