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1. 发明专利

JP2014042189A Power amplifier 审中-公开
标题翻译：功率放大器
公开(公告)号：JP2014042189A
公开(公告)日：2014-03-06
申请号：JP2012184025
申请日：2012-08-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MATSUZUKA TAKAYUKI , IYOMASA KAZUHIRO
IPC分类号： H03F3/24
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier that suppresses a fluctuation of idle current caused by a fluctuation in battery voltage.SOLUTION: An amplification element Tr3 amplifies an input signal input from outside. A bias circuit has a reference voltage terminal Vref fed with a battery voltage from a battery, and a constant current source 4 for generating a constant current from the voltage fed to the reference voltage terminal Vref. The bias circuit generates a bias current from the output current of the constant current source 4 to feed an input of the amplification element Tr3.
摘要翻译：要解决的问题：提供抑制由电池电压波动引起的空闲电流波动的功率放大器。解决方案：放大元件Tr3放大从外部输入的输入信号。偏置电路具有馈送有来自电池的电池电压的参考电压端子Vref和用于从馈送到参考电压端子Vref的电压产生恒定电流的恒流源4。偏置电路从恒定电流源4的输出电流产生偏置电流，以馈送放大元件Tr3的输入。

2. 发明专利

JP2015056793A 方向性結合器审中-公开
标题翻译：方向耦合器
公开(公告)号：JP2015056793A
公开(公告)日：2015-03-23
申请号：JP2013189460
申请日：2013-09-12
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： HIROTA AKEMICHI , YOSHIOKA HIDEHIRO , OWADA SATORU , IYOMASA KAZUHIRO , YAMAMOTO KAZUYA
IPC分类号： H01P5/18
摘要：【課題】偶モード動作時での通過位相と、奇モード動作時での通過位相との位相差をなくして、方向性が良好な方向性結合器を得る。【解決手段】第1の主信号線路11と第1の副信号線路13が電磁的に結合されることで形成されている結合線路の結合線路インピーダンスZ1cが、第2の主信号線路12と第2の副信号線路14が電磁的に結合されることで形成されている結合線路の結合線路インピーダンスZ2cよりも低くなるように構成する。これにより、偶モード動作時での通過位相と、奇モード動作時での通過位相との位相差をなくすことができる。【選択図】図1
摘要翻译：要解决的问题：提供一种定向耦合器，其具有优异的方向性，通过消除在偶模式下操作期间的通过相位与在奇数模式下操作期间的通过相位之间的相位差。解决方案：定向耦合器被配置为使得通过电磁耦合第一主信号线11和第一子信号线13形成的耦合线的耦合线路阻抗Z1低于通过电磁耦合第二主信号线12和第二子信号线13而形成的耦合线的耦合线阻抗Z2 这允许在奇数模式下操作期间，在均匀模式下操作期间的通过相位与通过相位之间消除相位差。

3. 发明专利

JP2014165823A Directional coupler 审中-公开
标题翻译：方向耦合器
公开(公告)号：JP2014165823A
公开(公告)日：2014-09-08
申请号：JP2013037229
申请日：2013-02-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HIROTA AKEMICHI , OWADA SATORU , IYOMASA KAZUHIRO , WATANABE SHINSUKE , YAMAMOTO KAZUYA
IPC分类号： H01P5/18
摘要： PROBLEM TO BE SOLVED: To obtain a directional coupler in which, even in the case where a coupling line impedance is made lower than a terminal impedance by restrictions in manufacture, the directivity is good.SOLUTION: A directional coupler has deletion parts 1106 provided in a ground conductor 1105 and arranged to be symmetrical to symmetry planes of a first signal conductor 1001 and a second signal conductor 1002, in a discontinuous structure having a function for delaying a phase and being smaller than a 1/4 wavelength of an operation frequency. Therefore, even in the case where a coupling line impedance is lower than a terminal impedance, in an even mode operation, the directional coupler is influenced by the deletion parts 1106 and the phase is delayed rather than the case where there is no deletion part 1106. In an odd mode operation, however, since the symmetry planes of the first signal conductor 1001 and the second signal conductor 1002 become electric walls, the directional coupler is not influenced by the deletion parts 1106 and a passing phase is not changed. Thus, a passing phase in the even mode operation and a passing phase in the odd mode operation can be matched, such that a directivity can be improved.
摘要翻译：要解决的问题：为了获得定向耦合器，其中即使在通过制造中的限制使耦合线路阻抗低于端子阻抗的情况下，方向性也良好。解决方案：定向耦合器具有设置在接地导体1105并且布置成与第一信号导体1001和第二信号导体1002的对称平面对称，具有延迟相位并且小于工作频率的1/4波长的功能的不连续结构。因此，即使在耦合线路阻抗低于端子阻抗的情况下，在偶模式操作中，定向耦合器受到删除部分1106的影响，并且相位被延迟，而不是没有删除部分1106的情况然而，在奇数模式操作中，由于第一信号导体1001和第二信号导体1002的对称面成为电壁，所以定向耦合器不受删除部分1106的影响，并且通过相位不变。因此，可以匹配偶模式操作中的通过相位和奇数模式操作中的通过相位，从而可以提高方向性。

4. 发明专利

JP2015056734A 電力増幅器有权
标题翻译：功率放大器
公开(公告)号：JP2015056734A
公开(公告)日：2015-03-23
申请号：JP2013188459
申请日：2013-09-11
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： WATANABE SHINTARO , IYOMASA KAZUHIRO
IPC分类号： H03F3/24 , H03F1/32
CPC分类号： H03F1/565 , H03F3/195 , H03F3/245 , H03F2200/165 , H03F2200/222
摘要：【課題】差周波を持つ入力雑音を抑制可能な小型の電力増幅器が提供される。【解決手段】電力増幅器PA1は、入力端子INと、増幅トランジスタ11と、バイアス回路21と、フィルタ回路61と、インピーダンス整合回路MC1と、を備えている。バイアス回路21は、増幅トランジスタ11の信号入力側にバイアスを供給することができる。フィルタ回路61は、増幅トランジスタ11の信号入力側のノイズを除去する。フィルタ回路61は、整合抵抗32、チップインダクタ52およびチップキャパシタ43を備えている。チップインダクタ52およびチップキャパシタ43はいずれも表面実装部品(SMD)である。整合抵抗32は、半導体基板1上に形成され、一端がMIMキャパシタ42とMIMキャパシタ41の間に接続し、他端がMIMキャパシタ42と増幅トランジスタ11の信号入力側の間に接続している。【選択図】図1
摘要翻译：要解决的问题：提供抑制具有差频率的输入噪声的紧凑型功率放大器。解决方案：功率放大器PA1包括输入端子IN，放大晶体管11，偏置电路21，滤波器电路61和阻抗匹配电路MC1。偏置电路21可以向放大晶体管11的信号输入侧提供偏置。滤波器电路61去除放大晶体管11的信号输入侧的噪声。滤波器电路61包括匹配电阻器32，芯片电感器52 芯片电容器43.芯片电感器52和芯片电容器43分别是表面安装器件（SMD）。匹配电阻器32形成在半导体衬底1上，其一端连接在MIM电容器42和MIM电容器41之间，另一端连接在MIM电容器41和放大晶体管11的信号输入侧之间。

5. 发明专利

JP2010041588A Power amplifier 有权
标题翻译：功率放大器
公开(公告)号：JP2010041588A
公开(公告)日：2010-02-18
申请号：JP2008204493
申请日：2008-08-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAYAMA MASATOSHI , MAEMURA KIMIMASA , IYOMASA KAZUHIRO , YAMAMOTO KAZUYA , MATSUZUKA TAKAYUKI , KITABAYASHI FUMIMASA
IPC分类号： H03F3/68 , H03F3/24
摘要： PROBLEM TO BE SOLVED: To obtain power amplification of small load dependency in the whole amplifier, achieving reduction in power consumption, size and cost. SOLUTION: The power amplifier distributes an input signal to at least three or more amplification paths, amplifies the input signal, and then synthesizes and outputs it. The amplifier has a unit amplifier provided to each amplification path, an input side phase shifting circuit provided each to an input side of the unit amplifier of the amplification path and an output side phase shifting circuit provided each to an output side of the unit amplifier of each amplification path. In a first operation, all the amplifiers work. In a second operation wherein output power is smaller than that in the first operation, at least two or more unit amplifiers amplify and work, and at least one unit amplifier becomes OFF-state. Although passage phase of each amplification path is the same, the output side phase shifting circuit of each amplification path has different passage phase. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了获得整个放大器的小负载依赖性的功率放大，实现功耗，尺寸和成本的降低。解决方案：功率放大器将输入信号分配到至少三个或更多个放大路径，放大输入信号，然后合成并输出。放大器具有提供给每个放大路径的单位放大器，每个输入侧相移电路分别设置在放大路径的单位放大器的输入侧，以及输出侧移相电路，每个输出侧相移电路分别设置在单元放大器的输出侧每个放大路径。在第一个操作中，所有的放大器工作。在其中输出功率小于第一操作中的输出功率的第二操作中，至少两个或更多个单元放大器放大并工作，并且至少一个单位放大器变为截止状态。虽然每个放大路径的通过相位相同，但是每个放大路径的输出侧移相电路具有不同的通过相位。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008113402A amplifier 审中-公开
标题翻译：放大器
公开(公告)号：JP2008113402A
公开(公告)日：2008-05-15
申请号：JP2007053120
申请日：2007-03-02
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IYOMASA KAZUHIRO , MORI KAZUTOMI , YAMANAKA KOJI , NAKAYAMA MASATOSHI , YONEDA SATOSHI , OWADA SATORU , OHASHI HIDEMASA , TSUYAMA YASUNORI
IPC分类号： H03F3/60
CPC分类号： H01L2224/48227 , H01L2224/49175
摘要： PROBLEM TO BE SOLVED: To obtain a small-sized amplifier with higher efficiency, wide band and small mounting area for real transistors. SOLUTION: An amplifier comprises: a transistor 10 for amplification; a stab 20 for higher harmonic wave reflection which is connected to an output terminal of the transistor 10 for amplification and diffuses an input susceptance at a plurality of frequencies each of which is an integer multiple of a fundamental wave frequency f 0 ; and a fundamental wave matching circuit 30 whose one terminal is connected to the output terminal of the transistor 10 for amplification in parallel with the stab 20 for higher harmonic wave reflection and another terminal is connected to a load circuit and which impedance-matches a sum of an output admittance of the transistor 10 for amplification and the input susceptance of the stab for higher harmonic wave reflection to an impedance value of the load circuit, wherein the stab 20 for higher harmonic wave reflection includes one trunk stab T21 whose one terminal is connected to the output terminal of the transistor for amplification, and a plurality of branch stabs T22, T23 branched and connected in parallel to another terminal of the trunk stab T21. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了获得具有更高效率，宽带和实际晶体管的小安装面积的小尺寸放大器。解决方案：放大器包括：用于放大的晶体管10; 用于高次谐波反射的刺杆20，其连接到用于放大的晶体管10的输出端子，并以多个频率扩散输入电纳，每个频率是基波频率f 0的整数倍， SB>; 以及一个基波匹配电路30，其一端连接到晶体管10的输出端，用于与用于高次谐波反射的插针20并联放大，另一端连接到负载电路，阻抗匹配用于放大的晶体管10的输出导纳和用于高次谐波反射的插针的输入电纳对于负载电路的阻抗值，其中用于高次谐波反射的针刺20包括一个中继线刺激T21，其一个端子连接到用于放大的晶体管的输出端子，以及分支并并联连接到主干线刺针T21的另一个端子的多个分支刺针T22，T23。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2014057154A Power Amplifier 审中-公开
标题翻译：功率放大器
公开(公告)号：JP2014057154A
公开(公告)日：2014-03-27
申请号：JP2012199605
申请日：2012-09-11
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IYOMASA KAZUHIRO , MATSUZUKA TAKAYUKI
IPC分类号： H03F1/30 , H03F3/24
CPC分类号： H03F3/21 , H03F1/0261 , H03F3/245 , H03F3/60 , H03F2200/18 , H03F2200/411
摘要： PROBLEM TO BE SOLVED: To provide a power amplifier that suppresses a fluctuation in an idle current attributable to a semiconductor process variation.SOLUTION: An amplification element Tr3 amplifies an input signal input from outside. A bias circuit 2 supplies a bias current to an input of the amplification element Tr3. In the bias circuit 2, one end of a first resistor Rb8 is connected to a reference voltage terminal Vref fed with a battery voltage from a battery. A second resistor Rb10 is connected between the other end of Rb8 and a ground point. A base of a first transistor Trb8 is connected to the junction of Rb8 and Rb10, a collector thereof is connected to a power supply, and an emitter thereof is connected to the input of Tr3. Rb8, Rb10 comprise the same material.
摘要翻译：要解决的问题：提供抑制归因于半导体工艺变化的空闲电流的波动的功率放大器。解决方案：放大元件Tr3放大从外部输入的输入信号。偏置电路2向放大元件Tr3的输入端提供偏置电流。在偏置电路2中，第一电阻器Rb8的一端连接到从电池供给电池电压的基准电压端子Vref。第二电阻器Rb10连接在Rb8的另一端与接地点之间。第一晶体管Trb8的基极连接到Rb8和Rb10的结，其集电极连接到电源，其发射极连接到Tr3的输入端。 Rb8，Rb10包含相同的材料。

8. 发明专利

JP2009213117A High-frequency amplifier, and high-frequency multi-stage amplifier 审中-公开
标题翻译：高频放大器和高频多级放大器
公开(公告)号：JP2009213117A
公开(公告)日：2009-09-17
申请号：JP2008295858
申请日：2008-11-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIHO SATOSHI , MORI KAZUTOMI , IYOMASA KAZUHIRO , TERANISHI ERI , YUGAWA HIDENORI , INOUE AKIRA
IPC分类号： H03G3/12 , H03F1/34 , H03F3/19 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To obtain a high-frequency amplifier and high-frequency multi-stage amplifier capable of attaining reduction in size of an entire circuit by matching approximately equally impedance in high-gain operation and low-gain operation, without newly providing a matching circuit.
SOLUTION: A series circuit constituted of a resistor 5, that has a resistance value corresponding to input impedance of an amplification element 3, and a switch is connected to an input side of an amplification element and when achieving high-gain operation, the switch 6 is turned off to set the amplification element 3 to an active state but when achieving low-gain operation, the switch 6 is turned on to set the amplification element 3 to an inactive state.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了获得能够通过在高增益操作和低增益操作中匹配大致相等的阻抗来实现整个电路的尺寸减小的高频放大器和高频多级放大器，而没有新提供匹配电路。解决方案：由具有对应于放大元件3的输入阻抗的电阻值和开关连接到电阻器5的串联电路连接到放大元件的输入侧，并且当实现高增益操作时，开关6断开以将放大元件3设置为有效状态，但是当实现低增益操作时，开关6导通以将放大元件3设置为无效状态。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009017351A High frequency amplifier 有权
标题翻译：高频放大器
公开(公告)号：JP2009017351A
公开(公告)日：2009-01-22
申请号：JP2007178320
申请日：2007-07-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MORI KAZUTOMI , IYOMASA KAZUHIRO , YUGAWA HIDENORI , NAKAYAMA MASATOSHI
IPC分类号： H03F3/60
摘要： PROBLEM TO BE SOLVED: To provide a high frequency amplifier which is small-sized, greatly suppresses a gain in a 1/2 frequency of its operating frequency, and suppresses unwanted oscillation to stably operate.
SOLUTION: The present invention relates to a high frequency amplifier comprising a semiconductor device 1 and a matching circuit 2 connected to the semiconductor device 1, wherein the matching circuit 2 includes a gain suppression circuit and the relevant gain suppression circuit comprises a transmission line 4 whose one end is grounded to a ground 5 and which becomes an electric length of a 1/4 wavelength or less in the operating frequency, a capacitor unit 6 connected in series to the other end of the transmission line 4 and configured by connecting in series a plurality of capacitors, and a resistor 3 connected in series to the capacitor unit 6. In place of the capacitor unit 6 and the transmission line 4, a metal-insulator-metal (MIM) capacitor unit configured by connecting in series a plurality of MIM capacitors may also be provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供小型的高频放大器，大大抑制其工作频率的1/2频率的增益，并且抑制不期望的振荡以稳定地操作。解决方案：本发明涉及包括半导体器件1和连接到半导体器件1的匹配电路2的高频放大器，其中匹配电路2包括增益抑制电路，并且相关增益抑制电路包括传输线路4的一端接地5，并且在工作频率中成为1/4波长或更小的电长度;电容器单元6，串联连接到传输线4的另一端，并通过连接串联连接多个电容器，以及与电容器单元6串联连接的电阻器3.代替电容器单元6和传输线4，金属绝缘体金属（MIM）电容器单元通过串联连接构成也可以提供多个MIM电容器。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2007027317A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2007027317A
公开(公告)日：2007-02-01
申请号：JP2005205815
申请日：2005-07-14
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： IYOMASA KAZUHIRO , YAMANAKA KOJI , NAKAYAMA MASATOSHI , TAKAGI SUNAO , OTSUKA HIROSHI , KUNII TETSUO , MATSUNAGA MAKOTO , TARUI YUKINORI
IPC分类号： H01L27/095
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve unstable state in a wide band ranging low frequency to high frequency by mounting a stabilization circuit to a semiconductor transistor under unstable state that is easy to oscillate even at an operation frequency, and which can be made compact.
SOLUTION: The semiconductor device is provided with a lower electrode 12 which is connected with a gate pad 11, a gate leading electrode 10 which is arranged opposite to the lower electrode 12, a dielectric 13 which is arranged between the lower electrode 12 and the gate leading electrode 10, and a resistor 14 which electrically connects the lower electrode 12 and the gate leading electrode 10. The lower electrode 12, the gate leading electrode 10, and the dielectric 13 comprise a capacitor, and it is electrically connected to the resistor 14, so that the gate pad 11 and the gate leading electrode 10 are connected by a stabilization circuit comprised of a parallel circuit provided with a capacitor and a resistance. The stabilization circuit is arranged at the position of the gate leading electrode 10 of a semiconductor transistor, so that an occupation area on a semiconductor substrate 1 can be made small, and therefore, a semiconductor device 1 comprised of the stabilization circuit and the semiconductor transistor can be made compact and cost can be also reduced.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体器件，其可以通过将稳定电路安装在即使在工作频率下易于振荡的不稳定状态下的半导体晶体管，从而改善在低频到高频范围内的宽带中的不稳定状态，并且可以做到紧凑。解决方案：半导体器件设置有与栅极焊盘11连接的下部电极12，与下部电极12相对配置的栅极引出电极10，布置在下部电极12之间的电介质13 和栅极引出电极10以及将下部电极12和栅极引出电极10电连接的电阻器14.下部电极12，栅极引出电极10和电介质13包括电容器，并且电连接到电阻器14，使得栅极焊盘11和栅极引出电极10通过由设置有电容器和电阻的并联电路组成的稳定电路连接。稳定电路配置在半导体晶体管的栅极引出电极10的位置，能够使半导体基板1上的占有面积变小，因此，由稳定电路和半导体晶体管构成的半导体装置1 可以做到紧凑，成本也可以降低。版权所有（C）2007，JPO＆INPIT

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