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    • 3. 发明申请
    • BISTABLE ELECTROACTIVE POLYMERS
    • 双电极聚合物
    • US20100171393A1
    • 2010-07-08
    • US12635674
    • 2009-12-10
    • Qibing PeiZhibin Yu
    • Qibing PeiZhibin Yu
    • H01L41/16H01L41/18H01L41/02H01L41/047H01L41/04G02B26/08G02B5/18
    • H01L41/098H01L41/094H01L41/0986H01L41/193
    • A bistable electroactive polymer transducer is provided for electrically actuated deformation of rigid electroactive polymer members. The polymers have glass transition temperatures (Tg) above ambient conditions and turn into rubbery elastomers above Tg and have high dielectric breakdown strength in the rubbery state. They can be electrically deformed to various rigid shapes with maximum strain greater than 100% and as high as 400%. The actuation is made bistable by cooling below Tg to preserve the deformation. The dielectric actuation mechanism includes a pair of compliant electrodes in contact with a dielectric elastomer which deforms when a voltage bias is applied between the pair of electrodes. In some of the transducers of the present invention, the dielectric elastomer is also a shape memory polymer. The deformations of such bistable electroactive polymers can be repeated rapidly for numerous cycles. The polymer transducers have such advantages as high energy and power densities, quietness, mechanical compliancy (for shock resistance and impedance matching), high efficiency, lightweight, and low cost.
    • 提供双稳态电活性聚合物换能器用于刚性电活性聚合物构件的电致变形。 聚合物具有高于环境条件的玻璃化转变温度(Tg),并变成高于Tg的橡胶状弹性体,并且在橡胶状态下具有高介电击穿强度。 它们可以电变形为各种刚性形状,最大应变大于100%,高达400%。 通过冷却低于Tg使致动双稳态以保持变形。 电介质致动机构包括与电介质弹性体接触的一对柔性电极,当在该对电极之间施加电压偏压时,电介质弹性体变形。 在本发明的一些换能器中,介电弹性体也是形状记忆聚合物。 这种双稳态电活性聚合物的变形可以快速重复多次。 聚合物换能器具有高能量和功率密度,安静性,机械兼容性(用于抗冲击和阻抗匹配),高效率,轻量化和低成本等优点。
    • 6. 发明申请
    • METHOD AND RELATED MOBILE DEVICE FOR REFERENCE SIGNAL TIME DIFFERENCE BASED LOCALIZATION
    • 用于参考信号时间差异的本地化的方法和相关移动设备
    • US20150215884A1
    • 2015-07-30
    • US14580685
    • 2014-12-23
    • Michael HorvatZhibin YuTian Yan Pu
    • Michael HorvatZhibin YuTian Yan Pu
    • H04W56/00H04J11/00G01S5/02H04W64/00
    • G01S5/0294G01S5/0221G01S5/10H04L27/266H04L27/2665H04L27/2675H04L27/2688H04L27/2695H04W64/003
    • The method according to the present disclosure introduces acquisition and tracking modes for a mobile device assisted multilateration based localization method. The method is employed for determining a relative time difference between a positioning reference cell and at least two other detectable positioning cells. The method includes in a mobile device attempting to detect a reference signal of a positioning cell to determine the timing of a detectable positioning cell by either applying sliding window approach to acquire the positioning cell or a single window approach to track the positioning cell. The sliding window approach within a search window is applied to acquire the positioning cell when a coarse timing of the positioning cell has not yet been achieved. A coarse timing is said to be achieved when only a fine timing is further required. This is the case when the remaining search window has a size that is not larger than the capture range capability of the mobile device. Conversely, a single window approach is applied to track the positioning cell when a coarse timing of the positioning cell has been achieved or when the search window is not larger than a capture range capability of the mobile device. Ultimately, the method includes computing the time difference between the positioning reference cell and the at least two other detectable positioning cells.
    • 根据本公开的方法引入了用于基于移动设备的多点定位方法的获取和跟踪模式。 该方法用于确定定位参考单元与至少两个其它可检测定位单元之间的相对时间差。 该方法包括在移动设备中尝试通过应用滑动窗口方法来获取定位单元或单一窗口方法来跟踪定位单元来检测定位单元的参考信号以确定可检测定位单元的定时。 当定位单元的粗略定时尚未实现时,应用搜索窗口内的滑动窗口方法来获取定位单元。 据说仅在进一步需要精细定时时才实现粗略定时。 当剩余搜索窗口的尺寸不大于移动设备的捕获范围能力时,就是这种情况。 相反,当已经实现定位单元的粗略定时或者当搜索窗口不大于移动设备的捕获范围能力时,应用单窗口方法来跟踪定位单元。 最终,该方法包括计算定位参考小区与至少两个其它可检测定位小区之间的时间差。
    • 9. 发明申请
    • THIN FILM VLS SEMICONDUCTOR GROWTH PROCESS
    • 薄膜半导体生长过程
    • US20140290737A1
    • 2014-10-02
    • US14243586
    • 2014-04-02
    • Ali JaveyZhibin YuRehan Kapadia
    • Ali JaveyZhibin YuRehan Kapadia
    • H01L31/0368H01L31/0304H01L31/18
    • H01L31/0368H01L31/0304H01L31/1852Y02E10/544Y02P70/521
    • A composition comprising a substrate, a polycrystalline III-V semiconductor layer, and an oxide layer disposed above the polycrystalline III-V semiconductor layer is described. A growth method that enables fabrication of continuous thin films of polycrystalline indium phosphide (InP) directly on metal foils is described. The method describes the deposition of an indium (In) thin film (up to 20 microns thick) directly on molybedenum (Mo) foil, followed by the deposition of a thin oxide capping layer (up to 1 micron thick). This capping layer prevents dewetting of the In from the substrate during subsequent high temperature processing steps. The Mo/In/Capping Layer stack is then heated in the presence of phosphorous precursors, causing supersaturation of the liquid indium with phosphorous, followed by precipitation of InP. These polycrystalline III-V films have grain sizes 100-200 microns, minority carrier lifetimes >2 ns and hall mobilities of 500 cm̂2/V-s.
    • 描述了包括基板,多晶III-V半导体层和设置在多晶III-V半导体层上方的氧化物层的组合物。 描述了能够直接在金属箔上制造多晶磷化铟(InP)的连续薄膜的生长方法。 该方法描述了直接在钼(Mo)箔上沉积铟(In)薄膜(直到20微米厚),然后沉积薄氧化物覆盖层(高达1微米厚)。 该封盖层防止在随后的高温处理步骤期间将In从衬底中去湿。 然后在磷前体的存在下加热Mo / In / Capping层堆叠,引起液体铟与磷过饱和,然后沉淀InP。 这些多晶III-V膜的晶粒尺寸为100-200微米,少数载流子寿命> 2ns,霍尔迁移率为500 cm2 / V-s。